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2SC3280733

The 2SC3280 is a silicon NPN power transistor designed for power amplifier applications, particularly in 80W high fidelity audio frequency amplifier output stages. It features a TO-3PL package and has maximum ratings including a collector-emitter voltage of 160V and a collector current of 12A. Key characteristics include a collector-emitter saturation voltage of 2.5V and a DC current gain ranging from 55 to 160.

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Jose Angel Torrealba
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35 views4 pages

2SC3280733

The 2SC3280 is a silicon NPN power transistor designed for power amplifier applications, particularly in 80W high fidelity audio frequency amplifier output stages. It features a TO-3PL package and has maximum ratings including a collector-emitter voltage of 160V and a collector current of 12A. Key characteristics include a collector-emitter saturation voltage of 2.5V and a DC current gain ranging from 55 to 160.

Uploaded by

Jose Angel Torrealba
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1301

APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connecte
2
d to mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 160 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 12 A

IB Base current 1.2 A

PC Collector power dissipation TC=25 120 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown IC=50mA ;IB=0 160 V


voltage

VCEsat Collector-emitter saturation IC=8A IB=0.8A 2.5 V


voltage

VBE Base-emitter voltage IC=6A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=160V IE=0 5 µA

IEBO Emitter cut-off current VEB=5V; IC=0 5 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 160

hFE-2 DC current gain IC=6A ; VCE=5V 35

fT Transition frequency IC=1A ; VCE=5V 30 MHz

COB Collector output capacitance f=1MHz;VCB=10V 220 pF

 hFE-1 classifications
R O

55- 80-
110 160

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

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