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in

No part of this publication may be reproduced or distributed in any form or any means, electronic, mechanical,
photocopying, or otherwise without the prior permission of the author.

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GATE SOLVED PAPER
Electronics & Communication
2007
e eri
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Copyright © By NODIA & COMPANY
En
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Information contained in this book has been obtained by authors, from sources believes to be reliable. However,
neither Nodia nor its authors guarantee the accuracy or completeness of any information herein, and Nodia nor its
authors shall be responsible for any error, omissions, or damages arising out of use of this information. This book
is published with the understanding that Nodia and its authors are supplying information but are not attempting
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to render engineering or other professional services.

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NODIA AND COMPANY

B-8, Dhanshree Tower Ist, Central Spine, Vidyadhar Nagar, Jaipur 302039
Ph : +91 - 141 - 2101150
www.nodia.co.in
email : [email protected]

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2007

Q.1 to Q.20 carry one mark each

Q. 1 If E denotes expectation, the variance of a random variable X is given by

n
(A) E X − E X (B) E X + E X
(C) E X (D) E X

g.i
Sol. 1 The variance of a random variable x is given by
E X −E X

n
Hence (A) is correct option.

eri
The following plot shows a function which varies linearly with x . The value of
Q. 2

the integral I = # ydx is

e
gin
En

(A) 1.0 (B) 2.5

(C) 4.0 (D) 5.0
arn

Sol. 2 The given plot is straight line whose equation is

x +y =1
−1 1
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or y = x+1
2
#1 ydx #1 (x + 1) dx
2
Now I = =
(x + 1) 2 2
=; E = − = 2. 5
9 4
w

2 2 2
Hence (B) is correct answer.
ww

Q. 3 For x << 1, coth (x) can be approximated as

(A) x (B) x2
(C) 1 (D) 12
x x
Sol. 3 Hence (C) is correct answer.
coth x = cosh x
sinh x
as x << 1, cosh x . 1 and sinh x . x
Thus coth x . 1
x

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sin b θ l
2
Q. 4 lim is
θ"0 θ
(A) 0.5 (B) 1
(C) 2 (D) not defined
Sol. 4 Hence (A) is correct answer.
sin ^ θ2 h sin ^ 2 hq sin ^ 2 hq
lim = lim = 1 lim = 1 = 0.5
θ"0 θ "q 0 2^ h q
2 "q 0 ^ 2 hq 2
2

Q. 5 Which one of following functions is strictly bounded?

n
(A) 1/x2 (B) ex
(C) x2 (D) e x2

g.i
Sol. 5 Hence (D) is correct answer.
We have, lim 12 = 3

n
x"0 x

lim x2 = 3

eri
x"3

lim e - x = 3
x"3

lim e - x = 0
2
e
x"3

lim e - x = 1
gin
2
x2
Thus e is strictly bounded.
x"0

Q. 6 For the function e x , the linear approximation around x = 2 is

(A) (3 − x) e - 2 (B) 1 − x
En

(C) 63 + 3 2 − (1 − 2 ) x @e - 2 (D) e 2

Sol. 6 Hence (A) is correct answer.

(x 2) 2 (x 2) 2
We have f (x) = e x
=e =e e
arn

(x − 2) 2
= ;1 − (x − 2) + ...Ee - 2
2!
= 61 − (x − 2)@e - 2 Neglecting higher powers
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= (3 − x) e -2

Q. 7 An independent voltage source in series with an impedance Zs = Rs + jXs

delivers a maximum average power to a load impedance ZL when
w

(A) ZL = Rs + jXs (B) ZL = Rs

(C) ZL = jXs (D) ZL = Rs − jXs
ww

Sol. 7 According to maximum Power Transform Theorem

ZL = Zs = (Rs − jXs)
Hence (D) is correct option.
Q. 8 The RC circuit shown in the figure is

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(A) a low-pass filter (B) a high-pass filter

(C) a band-pass filter (D) a band-reject filter
Sol. 8 At ω " 3 , capacitor acts as short circuited and circuit acts as shown in fig below

Here we get V =
Vi

n
At ω " 0 , capacitor acts as open circuited and circuit look like as shown in fig

g.i
below

n
eri
Here we get also V =
Vi
So frequency response of the circuit is as shown in fig and circuit is a Band pass
filter.
e
gin
En

Hence (C) is correct option.

arn

Q. 9 The electron and hole concentrations in an intrinsic semiconductor are ni per

cm3 at 300 K. Now, if acceptor impurities are introduced with a concentration
of NA per cm3 (where NA >> ni , the electron concentration per cm3 at 300 K
.Le

will be)
(A) ni (B) ni + NA
(C) NA − ni (D) ni
NA
w

Sol. 9 As per mass action law

np = ni
ww

If acceptor impurities are introduces

p = NA
Thus nNA = ni
or n = ni
NA
Hence option (D) is correct.
Q. 10 In a p n junction diode under reverse biased the magnitude of electric field is
maximum at
(A) the edge of the depletion region on the p-side
(B) the edge of the depletion region on the n -side

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(C) the p n junction

(D) the centre of the depletion region on the n -side
Sol. 10 The electric field has the maximum value at the junction of p n .
Hence option (C) is correct.
Q. 11 The correct full wave rectifier circuit is

n
n g.i
Sol. 11
e eri
The circuit shown in (C) is correct full wave rectifier circuit.
gin
En

Hence (C) is correct option.

arn

Q. 12 In a transconductance amplifier, it is desirable to have

(A) a large input resistance and a large output resistance
(B) a large input resistance and a small output resistance
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(C) a small input resistance and a large output resistance

(D) a small input resistance and a small output resistance
Sol. 12 In the transconductance amplifier it is desirable to have large input resistance
w

and large output resistance.

Hence (A) is correct option.
ww

Q. 13 X= and Y = are two 5-bit binary numbers represented in two’s

complement format. The sum of X and Y represented in two’s complement
format using 6 bits is
(A) 100111 (B) 0010000
(C) 000111 (D) 101001
Sol. 13 MSB of Y is 1, thus it is negative number and X is positive number
Now we have X = 01110 = (14) 10
and Y = 11001 = (− 7) 10
X + Y = (14) + (− 7) = 7
In signed two’s complements from 7 is

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GATE SOLVED PAPER - EC 2007

(7) 10 = 000111
Hence (C) is correct answer.
Q. 14 The Boolean function Y = AB + CD is to be realized using only 2 - input
NAND gates. The minimum number of gates required is
(A) 2 (B) 3
(C) 4 (D) 5
Sol. 14 Hence (B) is correct answer.
Y = AB + CD = AB .CD

n
This is SOP form and we require only 3 NAND gate

g.i
Q. 15 If the closed-loop transfer function of a control system is given as
T (s) s−5 , then It is
(s + 2)( s + 3)

n
(A) an unstable system (B) an uncontrollable system
(C) a minimum phase system (D) a non-minimum phase system
Sol. 15

eri
In a minimum phase system, all the poles as well as zeros are on the left half of
the s −plane. In given system as there is right half zero (s = 5), the system is a
non-minimum phase system.
e
Hence (D) is correct option.
gin
Q. 16 If the Laplace transform of a signal Y (s) = , then its final value is
s (s − )
(A) − 1 (B) 0
En

(C) 1 (D) Unbounded

Sol. 16 Hence (D) is correct answer.
1
arn

Y (s) =
s (s − 1)
Final value theorem is applicable only when all poles of system lies in left half of
S -plane. Here s = 1 is right s −plane pole. Thus it is unbounded.
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Q. 17 If R (τ) is the auto correlation function of a real, wide-sense stationary random

process, then which of the following is NOT true
(A) R (τ) R ( =τ) -
w

(B) R (τ) # R (0)

(C) R (τ) =R (- τ) -
ww

(D) The mean square value of the process is R (0)

Sol. 17 Autocorrelation is even function.
Hence (C) is correct option
Q. 18 If S (f) is the power spectral density of a real, wide-sense stationary random
process, then which of the following is ALWAYS true?
(A) S (0) # S (f) (B) S (f) $ 0
#- 3 S (f) df = 0
3
(C) S (− f) =− S (f) (D)
Sol. 18 Power spectral density is non negative. Thus it is always zero or greater than zero.
Hence (B) is correct option.

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Q. 19 A plane wave of wavelength λ is traveling in a direction making an angle 30c

with positive x − axis and 90c with positive y − axis. The E field of the plane
wave can be represented as (E is constant)
p p p p
t e j c tw− lx − zlm
(A) E = yE t e jc tw− xl− lz m
(B) E = yE
xp+ zpm − xp+ zp
t e jc
(C) E = yE tw
+
l l t e jc
(D) E = yE tw
l l m

Sol. 19 Hence (A) is correct option.

γ = cos 30cx ! bsin 30cy b
=2 p 3 x ! 2 1p y
l2 l2

n
= p3 x ! yp

g.i
l l
t wc p x ! yp
= ayg E e j; lmE
t w)
E = ay E e j ( l

n
Q. 20 If C is code curve enclosing a surface S , then magnetic field intensity H , the
current density j and the electric flux density D are related by
(A) ## H $ ds = ## c j + 2D m $ d t

(C)
S c 2t

##S H $ dS = #C c j + 22Dt m $ d t
e S

eri
(B) # H $ d l = ## c j + 2D m $ dS

(D)
S 2t

#C H $ d l # = ##S c j + 22Dt m $ ds
c
gin
Sol. 20 Hence (D) is correct option.
4# H = J + 2D Maxwell Equations
2t
## 4# H $ ds = ## `J + 22Dt j .ds Integral form
En

s s

# H $ dl = ## `J + 22Dt j .ds Stokes Theorem

arn

Q.21 to Q.75 carry two marks each.

Q. 21 It is given that X , X ...XM at M non-zero, orthogonal vectors. The dimension of
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the vector space spanned by the 2M vectors X , X ,... XM , − X , − X ,... − XM is

(A) 2M (B) M +
(C) M
w

(D) dependent on the choice of X , X ,... XM

Sol. 21 For two orthogonal vectors, we require two dimensions to define them and
ww

similarly for three orthogonal vector we require three dimensions to define them.
2M vectors are basically M orthogonal vector and we require M dimensions to
define them.
Hence (C) is correct answer.
Q. 22 Consider the function f (x) = x − x − . The maximum value of f (x) in the
closed interval [− 4, 4] is
(A) 18 (B) 10
(C) − 225 (D) indeterminate
Sol. 22 We have
f (x) = x − x +

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f x = 2x − 1 = 0 " x =

f x =2
Since f x = > , thus x = is minimum point. The maximum value in

closed interval 6− 4, 4@ will be at x =− or x =

Now maximum value
= max [f (− 4), f (4)]
= max (18, 10)

n
= 18
Hence (A) is correct answer.

g.i
Q. 23 An examination consists of two papers, Paper 1 and Paper 2. The probability
of failing in Paper 1 is 0.3 and that in Paper 2 is 0.2. Given that a student has

n
failed in Paper 2, the probability of failing in Paper 1 is 0.6. The probability of
a student failing in both the papers is

eri
(A) 0.5 (B) 0.18
(C) 0.12 e (D) 0.06
Sol. 23 Hence (C) is correct answer.
Probability of failing in paper 1 is P (A) = 0.3
gin
Possibility of failing in Paper 2 is P (B) = 0.2
Probability of failing in paper 1, when
student has failed in paper 2 is P ^ BA h = 0.6
En

We know that
(P + B)
Pb A l =
B P (B)
arn

or P (A + B) = P (B) P b A l = 0.6 # 0.2 = 0.12

B
d2 y
Q. 24 The solution of the differential equation k2 2 = y − y2 under the boundary
conditions dx
.Le

(i) y = y1 at x = 0 and
(ii) y = y2 at x = 3 , where k, y1 and y2 are constants, is

(A) y = (y1 − y2) exp a− x2 k + y2 (B) y = (y2 − y1) exp a− x k + y1

w

k k
(C) y = ^y1 − y2h sinh a k + y1
x (D) y = ^y1 − y2h exp a− k + y2
x
ww

k k
Sol. 24 Hence (D) is correct answer.
d2 y
We have k2 2 = y − y2
dx
d2 y y y
or − =− 22
dx2 k2 k
A.E. D2 − 12 = 0
k
or D =! 1
k
x x

C.F. = C1 e + C2 e
k k

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−y
P.I. = c m=y
D − k
Thus solution is k
x x

y = C e +C e +y k k

From y = y we get
C +C = y −y
From y 3 = y we get that C must be zero.
Thus C = y −y
x

y = (y1 − y2) e - + y2k

n
Q. 25 The equation x − x + x − = is to be solved using the Newton - Raphson

g.i
method. If x = is taken as the initial approximation of the solution, then next
approximation using this method will be
(A) 2/3 (B) 4/3

n
(C) 1 (D) 3/2
Sol. 25 We have
f (x) = x3 − x2 + 4x − 4
e
f x() = 3x2 − 2x + 4
eri
Taking x = 2 in Newton-Raphosn method
gin
f (x ) 23 − 22 + 4 (2) − 4
x =x − = 2− =4
f x() 3 (2) 2 − 2 (2) + 4 3
Hence (B) is correct answer.
En

Q. 26 Three functions f (t), f2 (t) and f3 (t) which are zero outside the interval [0, T] are
shown in the figure. Which of the following statements is correct?
arn
w .Le
ww

(A) f (t) and f2 (t) are orthogonal (B) f (t) and f3 (t) are orthogonal
(C) f2 (t) and f3 (t) are orthogonal (D) f (t) and f2 (t) are orthonormal
Sol. 26 For two orthogonal signal f (x) and g (x)
#- 3
3
f (x) g (x) dx = 0

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i.e. common area between f x and g x is zero.

Hence (C) is correct options.
Q. 27 If the semi-circular control D of radius 2 is as shown in the figure, then the
value of the integral # 2 1 ds is
D
(s − 1)

n
g.i
(A) jπ (B) − j p
(C) − p (D) π

n
Sol. 27 We know that

eri
# s2 − ds = 2 j p [sum of residues]
D

Singular points are at s = ! but only s =+ lies inside the given contour,
e
Thus Residue at s =+ is
gin
lim (s − 1) f (s) = lim (s − 1) 2 1 = 1
s"1 s"1 s −1 2
# s2 − ds = 2 j` 2 j = pj
1 p
En

D
Hence (A) is correct answer.
Q. 28 Two series resonant filters are as shown in the figure. Let the 3-dB bandwidth
of Filter 1 be B1 and that of Filter 2 be B2 . the value B1 is
arn

B2
.Le

(A) 4 (B) 1
w

(C) 1/2 (D) 1/4

ww

Sol. 28 We know that bandwidth of series RLC circuit is R . Therefore

L
Bandwidth of filter 1 is B1 = R
L1
Bandwidth of filter 2 is B2 = R = R = 4R
L2 L1 /4 L1
Dividing above equation 1 = 1
B
B2 4
Hence (D) is correct option.
Q. 29 For the circuit shown in the figure, the Thevenin voltage and resistance looking
into X − Y are

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(A) 4
3 V, 2 Ω (B) 4 V, 23 Ω
(C) 4
3 V, 23 Ω (D) 4 V, 2 Ω
Sol. 29 Here Vth is voltage across node also. Applying nodal analysis we get

n
n g.i
Vth + Vth + Vth − 2i = 2

But from circuit

Therefore
2 1
e 1

eri
i = Vth = Vth
1
gin
Vth + Vth + Vth − 2Vth = 2
2 1 1
or Vth = 4 volt
From the figure shown below it may be easily seen that the short circuit current
En

at terminal XY is isc = A because i = due to short circuit of 1 Ω resistor

and all current will pass through short circuit.
arn
.Le

Therefore Rth = Vth = = Ω

isc
w

Hence (D) is correct option.

Q. 30 In the circuit shown, vC is 0 volts at t = 0 sec. For t > 0 , the capacitor current
ww

iC (t), where t is in seconds is given by

(A) 0.50 exp (− 25t) mA (B) 0.25 exp (− 25t) mA

(C) 0.50 exp (− 12.5t) mA (D) 0.25 exp (− 6.25t) mA
Sol. 30 The voltage across capacitor is
At t = 0 , Vc (0 ) = 0

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At t = 3 , VC 3 = V
The equivalent resistance seen by capacitor as shown in fig is
Req = 20 20 = 10kΩ

Time constant of the circuit is

n
τ = Req C = k# =
m s

g.i
Using direct formula
Vc t = VC 3 − Vc 3 − Vc e−t t

n
= VC 3 − e−t + VC e−t t
= 5 (1 − e−t/0.04) t

eri
or Vc t = 5 (1 − e−25t)
dVC t
Now IC t = C
e
dt
= 4 # 10−6 # (− 5 # 25e−25t) = 0.5e−25t mA
gin
Hence (A) is correct option.
Q. 31 In the ac network shown in the figure, the phasor voltage VA (in Volts) is
En
arn

(A) 0 (B) 5+30c

.Le

(C) 12.5+30c (D) 17+30c

Sol. 31 Hence (D) is correct option.
(5 − 3j) # (5 + 3j)
Impedance = (5 − 3j) (5 + 3j) =
5 − 3j + 5 + 3j
w

(5) − (3j)
2 2
= = 25 + 9 = 3.4
10 10
ww

VAB = Current # Impedance = 5+30c # 34 = 17+30c

Q. 32 A p n junction has a built-in potential of 0.8 V. The depletion layer width a
m For a reverse bias of 7.2 V, the depletion layer
reverse bias of 1.2 V is 2 m.
width will be
(A) 4 mm (B) 4.9 mm
(C) 8 mm (D) 12 mm
Sol. 32 Hence option (A) is correct.
W = K V + VR
Now 2μ = K 0.8 + 1.2
From above two equation we get

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W = 0.8 + 7.2 = 8 =2
2μ 0.8 + 1.2 2
or W =4 m
m
Q. 33 Group I lists four types of p − n junction diodes. Match each device in Group I
with one of the option in Group II to indicate the bias condition of the device
in its normal mode of operation.
Group - I Group-II
(P) Zener Diode (1) Forward bias
(Q) Solar cell (2) Reverse bias

n
(R) LASER diode

g.i
(S) Avalanche Photodiode
(A) P - 1, Q - 2, R - 1, S - 2 (B) P - 2, Q - 1, R - 1, S - 2
(C) P - 2, Q - 2, R - 1, S- -2 (D) P - 2, Q - 1, R - 2, S - 2

n
Sol. 33 Zener diode and Avalanche diode works in the reverse bias and laser diode works

eri
in forward bias.
In solar cell diode works in forward bias but photo current is in reverse direction.
Thus
e
Zener diode : Reverse Bias
gin
Solar Cell : Forward Bias
Laser Diode : Forward Bias
Avalanche Photo diode : Reverse Bias
En

Hence option (B) is correct.

Q. 34 The DC current gain (β) of a BJT is 50. Assuming that the emitter injection
efficiency is 0.995, the base transport factor is
arn

(A) 0.980 (B) 0.985

(C) 0.990 (D) 0.995
Sol. 34 Hence option (B) is correct.
.Le

b
α= = 50 = 50
b 1 50 + 1
+ 51

Current Gain = Base Transport Factor # Emitter injection Efficiency

w

α = 1 # b2 b

or β1 = a= 50 = 0.985
ww

2b 51 # 0.995
Q. 35 Group I lists four different semiconductor devices. match each device in Group I
with its charactecteristic property in Group II
Group-I Group-II
(P) BJT (1) Population iniversion
(Q) MOS capacitor (2) Pinch-off voltage
(R) LASER diode (3) Early effect
(S) JFET (4) Flat-band voltage
(A) P - 3, Q - 1, R - 4, S - 2 (B) P - 1, Q - 4, R - 3, S - 2
(C) P - 3, Q - 4, R - 1, S - 2 (D) P - 3, Q - 2, R - 1, S - 4

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Sol. 35 In BJT as the B-C reverse bias voltage increases, the B-C space charge region
width increases which xB (i.e. neutral base width) > A change in neutral base
width will change the collector current. A reduction in base width will causes
the gradient in minority carrier concentration to increase, which in turn causes
an increased in the diffusion current. This effect si known as base modulation as
early effect.
In JFET the gate to source voltage that must be applied to achieve pinch off
voltage is described as pinch off voltage and is also called as turn voltage or
threshold voltage.
In LASER population inversion occurs on the condition when concentration of

n
electrons in one energy state is greater than that in lower energy state, i.e. a non

g.i
equilibrium condition.
In MOS capacitor, flat band voltage is the gate voltage that must be applied to
create flat ban condition in which there is no space charge region in semiconductor

n
under oxide.
Therefore

MOS capacitor: Flat-band voltage

e eri
BJT : Early effect

LASER diode : Population inversion

JFET : Pinch-off voltage
gin
Hence option (C) is correct.
Q. 36 For the Op-Amp circuit shown in the figure, V is
En
arn
.Le

(A) -2 V (B) -1 V
(C) -0.5 V (D) 0.5 V
Sol. 36 We redraw the circuit as shown in fig.
w
ww

Applying voltage division rule

v = 0.5 V
We know that v = v-
Thus v- = 0.5 V
Now i = 1 − 0.5 = 0.5 mA
1k

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and i = 0.5 − v0 = 0.5 mA

2k
or v = 0.5 − 1 =− 0.5 V
Hence (C) is correct option.
Q. 37 For the BJT circuit shown, assume that the β of the transistor is very large and
VBE = . V. The mode of operation of the BJT is

n
g.i
(A) cut-off (B) saturation

n
(C) normal active (D) reverse active

eri
Sol. 37 If we assume β very large, then IB = and IE = IC ; VBE = . V. We assume that
BJT is in active, so applying KVL in Base-emitter loop
IE = − VBE = 2 − 0.7 = 1.3 mA
1k
RE
e
Since β is very large, we have IE = IC , thus
gin
IC = 1.3 mA
Now applying KVL in collector-emitter loop
10 − 10IC − VCE − IC = 0
En

or VCE =− 4.3 V
Now VBC = VBE − VCE
= 0.7 − (− 4.3) = 5 V
arn

Since VBC > . V, thus transistor in saturation.

Hence (B) is correct option
Q. 38 In the Op-Amp circuit shown, assume that the diode current follows the
.Le

equation I = Is e p(V VT ). For Vi = V, V = V , and for Vi = V, V = V .

The relationship between V and V is
w
ww

(A) V = Vo (B) Vo = e Vo
(C) Vo = Vo n (D) Vo − Vo = VT n
Sol. 38 Here the inverting terminal is at virtual ground and the current in resistor and
diode current is equal i.e.
IR = ID
or Vi = I eV
D VT
s
R
or VD = VT n Vi
Is R

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For the first condition

VD = 0 − Vo1 = VT 1n 2
Is R
For the first condition
VD = 0 − Vo1 = VT 1n 4
Is R
Subtracting above equation
Vo − Vo = VT n − VT n
Is R Is R

n
or Vo − Vo = VT n = VT n

g.i
Hence (D) is correct option.
Q. 39 In the CMOS inverter circuit shown, if the trans conductance parameters of the

n
NMOS and PMOS transistors are
W
kn = kp = n Cox Wn = mCox p = m m

eri
A V
Ln Lp
and their threshold voltages ae VTHn = VTHp = V the current I is
e
gin
En

(A) 0 A (B) 25 μA
(C) 45 μA (D) 90 μA
arn

Sol. 39 Hence (D) is correct option

We have Vthp = Vthp = V
WP W
and = N = 40μA V2
LP LN
.Le

From figure it may be easily seen that Vas for each NMOS and PMOS is 2.5 V
Am
Thus ID = K (Vas − VT ) 2 = 40 2 (2.5 − 1) 2 = 90 Am
V
w

Q. 40 For the Zener diode shown in the figure, the Zener voltage at knee is 7 V, the
knee current is negligible and the Zener dynamic resistance is 10 Ω. If the input
ww

voltage (Vi) range is from 10 to 16 V, the output voltage (V0) ranges from

(A) 7.00 to 7.29 V (B) 7.14 to 7.29 V

(C) 7.14 to 7.43 V (D) 7.29 to 7.43 V
Sol. 40 We have VZ = 7 volt, VK = 0, RZ = 10Ω
Circuit can be modeled as shown in fig below

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Since Vi is lies between 10 to 16 V, the range of voltage across 200 kΩ

V200 = Vi − VZ = to 9 volt
The range of current through 200 kΩ is
3 = 15 mA to 9 = 45 mA

n
200k 200k
The range of variation in output voltage

g.i
15m # RZ = 0.15 V to 45m # RZ = 0.45
Thus the range of output voltage is 7.15 Volt to 7.45 Volt

n
Hence (C) is correct option.

eri
Q. 41 The Boolean expression Y = ABC D + ABCD + ABC D + ABC D can be
minimized to
(A) Y = ABC D + ABC + AC D (B) Y = ABC D + BCD + ABC D
e
(C) Y = ABCD + BC D + ABC D (D) Y = ABCD + BC D + ABC D
gin
Sol. 41 Hence (D) is correct answer.
Y = ABCD + ABCD + ABC D + ABC D
= ABCD + ABC D + ABC D + ABC D
En

= ABCD + ABC D + BC D (A + A)
= ABCD + ABC D + BC D A+A = 1
Q. 42 The circuit diagram of a standard TTL NOT gate is shown in the figure.
arn

Vi = 25 V, the modes of operation of the transistors will be

w .Le
ww

(A) Q1 revere active; Q2 normal active; Q saturation; Q4 cut-off

(B) Q1 revere active; Q2 saturation; Q saturation; Q4 cut-off
(C) Q1 normal active; Q2 cut-off; Q cut-off; Q4 saturation
(D) Q1 saturation; Q2 saturation; Q saturation; Q4 normal active
Sol. 42 In given TTL NOT gate when Vi = 2.5 (HIGH), then
Q1 " Reverse active
Q2 " Saturation

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Q " Saturation
Q " cut - off region
Hence (B) is correct answer.
Q. 43 In the following circuit, X is given by

n
g.i
(A) X = ABC + ABC + ABC + ABC
(B) X = ABC + ABC + ABC + ABC

n
(C) X = AB + BC + AC

eri
(D) X = AB + BC + AC
Sol. 43 The circuit is as shown below
e
gin
En

Y = AB + AB
arn

and X = YC + YC
= (AB + AB ) C + (AB + AB ) C
= (AB + AB) C + (AB + AB ) C
.Le

= ABC + ABC + ABC + ABC

Hence (A) is correct answer.
Q. 44 The following binary values were applied to the X and Y inputs of NAND latch
w

shown in the figure in the sequence indicated below :

X = ,Y = X = , Y = X= Y=
The corresponding stable P, Q output will be.
ww

(A) P = , Q = P = ,Q = P = , Q = or P = , Q =
(B) P = , Q = P = ,Q = or P = , Q = P = , Q =
(C) P = , Q = P = ,Q = P = , Q = or P = , Q =
(D) P = , Q = P = ,Q = P = ,Q =

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Sol. 44 Hence (C) is correct answer.

For X = Y= P= Q=
For X = Y= P= Q=
For X = Y= P= Q= or P = Q=

Q. 45 For the circuit shown, the counter state (Q1 Q0) follows the sequence

n
g.i
(A) 00, 01, 10, 11, 00 (B) 00, 01, 10, 00, 01

n
(C) 00, 01, 11, 00, 01 (D) 00, 10, 11, 00, 10
Sol. 45

shown below

Clock D1 D0
e eri
For this circuit the counter state (Q1, Q0) follows the sequence 00, 01, 10, 00 ... as

Q1 Q0 Q1 NOR Q0
gin
00 1
1st 01 10 0
2nd 10 01 0
En

3rd 00 00 0
arn
.Le

Hence (A) is correct answer.

Q. 46 An 8255 chip is interfaced to an 8085 microprocessor system as an I/O mapped
I/O as show in the figure. The address lines A0 and A1 of the 8085 are used
w

by the 8255 chip to decode internally its thee ports and the Control register.
The address lines A3 to A as well as the IO/M signal are used for address
ww

decoding. The range of addresses for which the 8255 chip would get selected is

(A) F8H - FBH (B) F8GH - FCH

(C) F8H - FFH (D) F0H - F7H
Sol. 46 Chip 8255 will be selected if bits A3 to A7 are 1. Bit A0 to A2 can be 0 or.
1. Thus address range is
11111000 F8H

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11111111 FFH
Hence (C) is correct answer.
Q. 47 The 3-dB bandwidth of the low-pass signal e−t u (t), where u (t) is the unit step
function, is given by
(A) 1 Hz (B) 1 2 1- Hz
2π 2π
(C) 3 (D) 1 Hz
Sol. 47 Hence (A) is correct answer.
x (t) = e−t u (t)

n
Taking Fourier transform

g.i
X (jω) = 1
1+j w
X (jω) = 1 2
1+ w

n
Magnitude at 3dB frequency is 1

eri
2
Thus 1 = 1
2 1 + 2w
ω = 1 rad
or
e
f = 1 Hz
gin
or
2 p
Q. 48 A Hilbert transformer is a
(A) non-linear system (B) non-causal system
En

(C) time-varying system (D) low-pass system

Sol. 48 A Hilbert transformer is a non-linear system.
Hence (A) is correct answer.
arn

Q. 49 The frequency response of a linear, time-invariant system is given by

H (f) = 1 + j1 f p. The step response of the system is
(B) 5 61 − e− 5@ u (t)
t
(A) 5 (1 − e−5t) u (t)
.Le

(D) 1 ^1 − e− 5 h u (t)
t
(C) 1 (1 − e−5t) u (t)
2 5
Sol. 49 Hence (B) is correct answer.
H (f) = 5
w

1 + j10 f p
H (s) = 5 = 5 = 1
1 + 5s 5^s + 15 h s + 15
ww

Step response Y (s) = 1 a 1

s ^s + h
or Y (s) = 1 1 1 = −
s ^s + h s s+ 1
−t/5
or y (t) = 5 (1 − e ) u (t)

Q. 50 A 5-point sequence x n is given as x − 3 = 1, x − = 1, x − 1 = , x = 5

and x 1 = 1. Let X (eiω) denoted the discrete-time Fourier transform of x n .
π
The value of # π-
X (e jω) dω is
(A) 5 (B) 10π
(C) 16π (D) 5 + j10 p

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Sol. 50 For discrete time Fourier transform (DTFT) when N " 3

p
x n = 1 # X (e j )we j nwd w
2 p − p

Putting n = we get
p p
x = 1 # X (e j ) e j w0 d w
= w1 # X (e j )wd w
2 p
− p 2 p− p
π
or # π-
X (e jω) dω = 2 xp[0] = 2 # 5 = 10 p p

Hence (B) is correct answer.

Q. 51 The z −transform X (z) of a sequence x n is given by X z = − . z . It is given
−

n
that the region of convergence of X (z) includes the unit circle. The value of x
is

g.i
(A) − 0.5 (B) 0
(C) 0.25 (D) 05

n
Sol. 51 Hence (B) is correct answer.

eri
X (z) = 0.5 −1
1 − 2z
Since ROC includes unit circle, it is left handed system
x (n) =− (0.5) (2) −n u (− n − 1)
e
x (0) = 0
gin
If we apply initial value theorem
x (0) = lim X (z) = lim 0.5 −1 = 0.5
z"3 z " 31 − 2z
En

That is wrong because here initial value theorem is not applicable because
signal x (n) is defined for n < 0 .
Q. 52 A control system with PD controller is shown in the figure. If the velocity error
arn

constant KV = 000and the damping ratio ζ = 0.5 , then the value of KP and
KD are
.Le

(A) KP = 00, KD = 0.0 (B) KP = 00, KD = 0.

w

(C) KP = 0, KD = 0.0 (D) KP = 0, KD = 0.

Sol. 52 Hence (B) is correct option
ww

We have Kv = lim sG (s) H (s)

s"0
(Kp + KD s) 100
or 1000 = lim s = Kp
s"0 s (s + 100)
Now characteristics equations is
1 + G (s) H (s) = 0
(Kp + KD s) 100
1000 = lims " 0 s = Kp
s (s + 100)
Now characteristics equation is
1 + G (s) H (s) = 0

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(100 + KD s) 100
or 1+ =0 Kp =
s (s + 10)
or s + + KD s + =0

Comparing with s + xn + w n = 0 wwe get

2ξωn = 10 + 100KD
or KD = 0.9
Q. 53 The transfer function of a plant is
T s = 5
(s + 5)( s2 + s + 1)

n
The second-order approximation of T s using dominant pole concept is

g.i
(A) 1 (B) 5
(s + 5)( s + 1) (s + 5)( s + 1)
(C) (D)
s +s+ s +s+

n
Sol. 53 Hence (D) is correct option.

eri
We have T (s) = 5
(s + 5)( s2 + s + 1)
= 5 =
5`1 + s j (s2 + s + 1) s +s+
e
5
In given transfer function denominator is (s + 5)[( s + 0.5) 2 + 43 ]. We can see
gin
easily that pole at s =− . ! j is dominant then pole at s =− . Thus we
have approximated it.
Q. 54 The open-loop transfer function of a plant is given as G (s) = s - . If the plant is
En

operated in a unity feedback configuration, then the lead compensator that an

stabilize this control system is
(s − ) (s + )
(A) (B)
arn

s+ s+
(s + ) (s + )
(C) (D)
s+ s+
Sol. 54 Hence (A) is correct option.
.Le

G (s) = =
s − (s + )( s − )
The lead compensator C (s) should first stabilize the plant i.e. remove 1
(s − 1)
term. From only options (A), C (s) can remove this term
w

1 10 (s − 1)
Thus G (s) C (s) =
ww

#
(s + 1)( s − 1) (s + 2)
= 10 Only option (A) satisfies.
(s + 1)( s + 2)
Q. 55 A unity feedback control system has an open-loop transfer function
G (s) = K
s (s + s + )
The gain K for which s = + j will lie on the root locus of this system is
(A) 4 (B) 5.5
(C) 6.5 (D) 10
Sol. 55 For ufb system the characteristics equation is
1 + G (s) = 0

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or 1+ K =0
s (s2 + 7s + 12)
or s s + s+ +K = 0
Point s =− + j lie on root locus if it satisfy above equation i.e
(− 1 + j)[( − 1 + j) 2 + 7 (− 1 + j) + 12) + K] = 0
or K =+ 10
Hence (D) is correct option.
Q. 56 The asymptotic Bode plot of a transfer function is as shown in the figure. The
transfer function G (s) corresponding to this Bode plot is

n
n g.i
(A) 1
(s + 1)( s + 20)
e eri
(B)
s (s + )( s + )
gin
(C) (D)
s (s + )( s + ) s (s + )( + . s)
Sol. 56 At every corner frequency there is change of -20 db/decade in slope which indicate
pole at every corner frequency. Thus
En

G (s) = K
s ( + s)` + s j
20
Bode plot is in (1 + sT) form
20 log K
arn

= 60 dB = 1000
ω ω = 0. 1
Thus K =5
Hence G (s) = 100
s (s + 1)( 1 + .0 s)
.Le

Hence (D) is correct option.

Q. 57 The state space representation of a separately excited DC servo motor dynamics
is given as
w

dω
−1 w 0
> di H = =− 1 − 10G=ia G + =10Gu
dt 1
o
ww

dt

where ω is the speed of the motor, ia is the armature current and u is the
ω (s)
armature voltage. The transfer function of the motor is
U (s)
(A) 2 10 (B) 2 1
s + 11s + 11 s + 11s + 11
(C) 2 10s + 10 (D) 2 1
s + 11s + 11 s + s + 11
Sol. 57 Hence (A) is correct option.
dω
−1 w 0
> di H = =− 1 − 10G=in G + =10Gu
dt 1
We have a
dt

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or dω =− +w in ...(1)
dt
and dia =− −
w 10ia + 10u ...(2)
dt
Taking laplace transform (i) we get
sω (s) =− (w s) = Ia (s)
or (s + 1) (ws) = Ia (s) ...(3)
Taking laplace transform (ii) we get
sIa (s) =− (w s) − 10Ia (s) + 10U (s)

n
or ω (s) = (− 10 − s) Ia (s) + 10U (s)

g.i
= (− 10 − s)( s + 1) (ws) + 10U (s) From (3)
or ω (s) =− [s + 11s + 10] (w
2
s) + 10U (s)
or(s + 11s + 11) (w
2
s) = 10U (s)

n
ω (s)
or = 2 10

eri
U (s) (s + 11s + 11)
Q. 58 In delta modulation, the slope overload distortion can be reduced by
(A) decreasing the step size (B) decreasing the granular noise
e
(C) decreasing the sampling rate (D) increasing the step size
gin
Sol. 58 Slope overload distortion can be reduced by increasing the step size
3 $ slope of x (t)
Ts
En

Hence (D) is correct option.

Q. 59 The raised cosine pulse p (t) is used for zero ISI in digital communications. The
expression for p (t) with unity roll-off factor is given by
arn

p (t) = sin 4 Wtp

p (1 − 16W2 t2)
4 Wt

The value of p (t) at t = 1 is

W
.Le

(A) − 0.5 (B) 0

(C) 0.5 (D) 3
Sol. 59 Hence (C) is correct option.
w

p)
sin (4 Wt
We have p (t) =
p (1 − 16W2 t2)
4 Wt
ww

at t = 1 it is 0 form. Thus applying L Hospital rule

W 0
4 W cos (4 pWt) p
p( ) =
1
4W

4 Wp [1 − 48W2 t2]
p)
cos (4 Wt
= = cos p
= 0.5
1 − 48W2 t2 1−3
Q. 60 In the following scheme, if the spectrum M (f) of m (t) is as shown, then the
spectrum Y (f) of y (t) will be

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n
n g.i
Sol. 60 The block diagram is as shown below
e eri
gin
En

Here M f = Mt f
pB p
arn

Y f = M f ce
j B
+ej
m
pB p
Y f = M f ce
j B
−ej
m
.Le

Y f = Y f +Y f
All waveform is shown below
w
ww

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Hence (B) is correct option.

Q. 61 During transmission over a certain binary communication channel, bit errors
occur independently with probability p. The probability of AT MOST one bit
in error in a block of n bits is given by
(A) pn (B) 1 − pn

n
(C) np ( − p) n + ( + p) n (D) 1 − (1 − p) n

g.i
Sol. 61 By Binomial distribution the probability of error is
pe = n Cr pr ( − p) n r
Probability of at most one error

n
= Probability of no error + Probability of one error

eri
= n C p ( − p) n + n C p ( − p) n

= (1 − p) n + np (1 − p) n - 1
e
Hence (C) is correct option.
gin
Q. 62 In a GSM system, 8 channels can co-exist in 200 kHz bandwidth using TDMA.
A GSM based cellular operator is allocated 5 MHz bandwidth. Assuming a
frequency reuse factor of 1 , i.e. a five-cell repeat pattern, the maximum number
5
of simultaneous channels that can exist in one cell is
En

(A) 200 (B) 40

(C) 25 (D) 5
arn

Sol. 62 Bandwidth allocated for 1 Channel = 5 M Hz

Average bandwidth for 1 Channel 5 = 1 MHz
5
Total Number of Simultaneously Channel = 1M # 8 = 40 Channel
200k
.Le

Hence (B) is correct option.

Q. 63 In a Direct Sequence CDMA system the chip rate is 1.2288 # 106 chips per
second. If the processing gain is desired to be AT LEAST 100, the data rate
w

(A) must be less than or equal to 12.288 # 103 bits per sec
(B) must be greater than 12.288 # 103 bits per sec
ww

(C) must be exactly equal to 12.288 # 103 bits per sec

(D) can take any value less than 122.88 # 103 bits per sec
Sol. 63 Hence (A) is correct option.
Chip Rate RC = 1.2288 # 106 chips/sec

Data Rate Rb = RC
G
Since the processing gain G must be at least 100, thus for Gmin we get
6
Rb max = RC = 1.2288 # 10 = 12.288 # 103 bps
Gmin 100

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Q. 64 An air-filled rectangular waveguide has inner dimensions of 3 cm # 2 cm.

The wave impedance of the TE2 mode of propagation in the waveguide at a
frequency of 30 GHz is (free space impedance η0 = 377 )W
(A) 308 Ω (B) 355 Ω
(C) 400 Ω (D) 461 Ω
Sol. 64 The cut-off frequency is
fc = c m 2 n 2
` a j +`b j
2
Since the mode is TE20 m = 2 and n = 0

n
fc = c m = 3 # 10 # 2 = 10 GHz
8

2 2 2 # 0.03

g.i
oh 377
η' = fc 2
= 10 = 400Ω
1−c m
2
1 − c 10 10 m
f 3 # 10

n
Hence (C) is correct option.

eri
Q. 65 The H field (in A/m) of a plane wave propagating in free space is given by
H = xt 5 3 cos ( t − wz) + yt` t −b z + jp. w b
0h 2
e
The time average power flow density in Watts is
gin
η
(A) 0 (B) 100
100 η0
(C) 50η0
2
(D) 50
η0
En

Sol. 65 Hence (D) is correct option.

2
= Hx2 + Hy2 = c 5 3 m + c 5 m = c 10 m
2 2
We have H 2
o h
o o h h
o hH
arn

E2 2
h 2
For free space P = = = o c 10 m = 50 watts
2 oh 2 2 o oh h

Q. 66 The E field in a rectangular waveguide of inner dimension a # b is given by

.Le

w m
E = 2 ` j H0 sin ` 2 lx j sin ( t − wz) yt pb
2

h 2 a
Where H0 is a constant, and a and b are the dimensions along the x − axis and
the y − axis respectively. The mode of propagation in the waveguide is
w

(A) TE20 (B) TM11

(C) TM20 (D) TE10
ww

Sol. 66 Hence (A) is correct option.

w m
E = 2 ` j H0 sin ` 2 px j sin ( t − wz) yt pb
2

h 2 a
This is TE mode and we know that
mπy
Ey \ sin ` mπx j cos `
a b j
Thus m = 2 and n = 0 and mode is TE20
Q. 67 A load of 50 Ω is connected in shunt in a 2-wire transmission line of Z0 = 50Ω
as shown in the figure. The 2-port scattering parameter matrix (s-matrix) of the
shunt element is

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− 12 1
(A) > 1 1H
0 1
2
(B) = G
2 −2 1 0
−1 4 −4
2 1 3
(C) > 23 3
H (D) > 1H
3 −3
1
− 43 4
Sol. 67 The 2-port scattering parameter matrix is

n
S S 2
S ==
S2 S22 G

g.i
(Z Z ) − Zo (50 50) − 50
S = L 0 = =− 1
(ZL Z0) + Zo (50 50) + 50 3

n
2 (ZL Zo) 2 (50 50)
S 2 = S2 = = =2
(ZL Zo) + Zo (50 50) + 50 3
(Z Z ) − Zo
S22 = L o
(ZL Zo) + Zo
Hence (C) is correct option.
e eri=
(50 50) − 50
(50 50) + 50
=− 1
3
gin
Q. 68 The parallel branches of a 2-wire transmission line re terminated in 100Ω and
200Ω resistors as shown in the figure. The characteristic impedance of the
line is Z0 = Ω 0 and each section has a length of λ . The voltage reflection
4
coefficient Γ at the input is
En
arn
w .Le

(A) − j (B) − 5
7
ww

(C) j (D) 5
7
Sol. 68 The input impedance is
2
Zin = Zo ; if l = l
ZL
2 2
Zin1 = Zo1 = 0 = 2
ZL1 100
2 2
Zin2 = Zo2 = 0 = 12.
ZL2 200
Now ZL = Zin1 Zin2
25 12.5 = 25
3

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(50) 2
Zs = = 300
25/3
Γ = ZS − Zo = − =
ZS + Zo +
Hence (D) is correct option.

Q. 69 A λ dipole is kept horizontally at a height of λ0 above a perfectly conducting

2 2
infinite ground plane. The radiation pattern in the lane of the dipole (E plane)
looks approximately as

n
n g.i
Sol. 69
e eri
Using the method of images, the configuration is as shown below
gin
En

Here d = , l= ,athus βdp =π

d cos b+ y a
= cos ; E
arn

Array factor is
2
p +
2 cos y p
= cos ; E = sin ( cos p) y
2
Hence (B) is correct option.
.Le

Q. 70 A right circularly polarized (RCP) plane wave is incident at an angle 60c to the
normal, on an air-dielectric interface. If the reflected wave is linearly polarized,
the relative dielectric constant ξr is.
w
ww

(A) 2 (B) 3
(C) 2 (D) 3
Sol. 70 The Brewster angle is
tan θn = r e
r e
tan 60c = r2e
1

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or εr = 3
Hence (D) is correct option.

Common Data Questions

Common Data for Questions 71, 72, 73 :

The figure shows the high-frequency capacitance - voltage characteristics of
Metal/Sio 2 /silicon (MOS) capacitor having an area of 1 # 10 - 4 cm 2 . Assume that

n
the permittivities (ε0 εr ) of silicon and Sio are 1 # 10 - 12 F/cm and 3.5 # 10 - 13 F/

g.i
cm respectively.

n
e eri
Q. 71 The gate oxide thickness in the MOS capacitor is
gin
(A) 50 nm (B) 143 nm
(C) 350 nm (D) 1 μm
Sol. 71 At low voltage when there is no depletion region and capacitance is decide by
En

SiO thickness only,

C = 0 re1 A e
D
arn

−13
or D = ε0 εr1 A = 3.5 # 10 −# 10−4 = 50 nm
1
C # 10
Hence option (A) is correct
.Le

Q. 72 The maximum depletion layer width in silicon is

(A) 0.143 mm (B) 0.857 mm
(C) 1 mm (D) 1.143 mm
The construction of given capacitor is shown in fig below
w

Sol. 72
ww

When applied voltage is 0 volts, there will be no depletion region and we get
C1 = 7 pF
When applied voltage is V , a depletion region will be formed as shown in fig an
total capacitance is 1 pF. Thus

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CT = 1 pF
or CT = C C = pF
C +C
or = +
CT C C
Substituting values of CT and C we get
C = 7 pF
6
re A e 1 # 10
- 12
Now D = = # 10 - 4 = 6 # 10 - 4 cm
C 7 - 12 7
6 # 10

n
= 0.857 μm

g.i
Hence option (B) is correct.

Q. 73 Consider the following statements about the C − V characteristics plot :

S1 : The MOS capacitor has as n -type substrate

n
S2 : If positive charges are introduced in the oxide, the C − V polt will shift to

eri
the left.
Then which of the following is true?
(A) Both S1 and S2 are true (B) S1 is true and S2 is false
e
(C) S1 is false and S2 is true (D) Both S1 and S2 are false
gin
Sol. 73 Depletion region will not be formed if the MOS capacitor has n type substrate
but from C-V characteristics, C reduces if V is increased. Thus depletion region
must be formed. Hence S1 is false
En

If positive charges is introduced in the oxide layer, then to equalize the effect the
applied voltage V must be reduced. Thus the C − V plot moves to the left. Hence
S2 is true.
arn

Hence option (C) is correct.

Common Data for Questions 74 & 75 :

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Two 4-array signal constellations are shown. It is given that φ1 and φ2 constitute
an orthonormal basis for the two constellation. Assume that the four symbols
in both the constellations are equiprobable. Let N0 denote the power spectral
2
density of white Gaussian noise.
w
ww

Q. 74 The if ratio or the average energy of Constellation 1 to the average energy of

Constellation 2 is
(A) 4a2 (B) 4
(C) 2 (D) 8

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Sol. 74 Energy of constellation 1 is

Eg1 = (0) 2 + (− 2 a) 2 + (− 2 a) 2 + ( 2 a) 2 + (− 2 2 a) 2

= 2a2 + 2a2 + 2a2 + 8a2 = 16a2

Energy of constellation 2 is
Eg2 = a2 + a2 + a2 + a2 = 4a2
Eg1 1 a2
Ratio = = =
Eg2 a2
Hence (B) is correct option.

n
Q. 75 If these constellations are used for digital communications over an AWGN

g.i
channel, then which of the following statements is true ?
(A) Probability of symbol error for Constellation 1 is lower
(B) Probability of symbol error for Constellation 1 is higher

n
(C) Probability of symbol error is equal for both the constellations

eri
(D) The value of N will determine which of the constellations has a lower
probability of symbol error

Sol. 75 Noise Power is same for both which is N0 .

e
2
Thus probability of error will be lower for the constellation 1 as it has higher
gin
signal energy.
Hence (A) is correct option.
En

Linked Answer Questions : Q.76 to Q.85 carry two marks each.

Statement for Linked Answer Questions 76 & 77:

arn

Consider the Op-Amp circuit shown in the figure.

w .Le
ww

Q. 76 The transfer function V (s) Vi (s) is

(A) 1 − sRC (B) 1 + sRC
1 + sRC 1 − sRC
(C) 1 (D) 1
1 − sRC 1 + sRC
Sol. 76 The voltage at non-inverting terminal is
1
V = sC
Vi = 1 V
R+ 1
sC
1 + sCR i
Now V- = V = 1 V
1 + sCR i
Applying voltage division rule

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R V + Vi
V = V + Vi = o
R +R
1 (V + Vi)
or V = o
1 + sCR i 2
or Vo =− 1 + 2
Vi 1 + sRC
V = 1 − sRC
Vi 1 + sRC
Hence (A) is correct option.

n
Q. 77 If Vi = V sin ( t)w and V = V sin ( t + w), then thefminimum and maximum
values of φ (in radians) are respectively

g.i
(A) − pand π (B) 0 and π
2 2 2
(C) − and p 0 (D) − pand 0

n
2
Sol. 77 Hence (C) is correct option.
V0 = H (s) = − sRC
Vi
H (jω) =
1 − j RC
w
1 + j RC
w
+ sRC
e eri
gin
+H (jω) = =− tan - 1 fRC − tan - 1 RC w w
=− 2 tan RCw-2

Minimum value, φmin = − (at p" 3) w

En

Maximum value, φmax = 0( at ω = 0)

Statement for Linked Answer Questions 78 & 79 :

arn

An 8085 assembly language program is given below.

Line 1: MVI A, B5H
2: MVI B, OEH
3: XRI 69H
.Le

4: ADD B
5: ANI 9BH
6: CPI 9FH
w

7: STA 3010H
8: HLT
ww

Q. 78 The contents of the accumulator just execution of the ADD instruction in line 4
will be
(A) C3H (B) EAH
(C) DCH (D) 69H
Sol. 78 Line 1 : MVI A, B5H ; Move B5H to A
2 : MVI B, 0EH ; Move 0EH to B
3 : XRI 69H ; [A] XOR 69H and store in A
; Contents of A is CDH
4 : ADDB ; Add the contents of A to contents of B and
; store in A, contents of A is EAH
5 : ANI 9BH ; [a] AND 9BH, and store in A,

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; Contents of A is 8 AH
6 : CPI 9FH ; Compare 9FH with the contents of A
; Since 8 AH < 9BH, CY = 1
7 : STA 3010 H ; Store the contents of A to location 3010 H
8 : HLT ; Stop
Thus the contents of accumulator after execution of ADD instruction is EAH.
Hence (B) is correct answer.
Q. 79 After execution of line 7 of the program, the status of the CY and Z flags will
be
(A) CY = 0, Z = 0 (B) CY = 0, Z = 1

n
(C) CY = 1, Z = 0 (D) CY = 1, Z = 1

g.i
Sol. 79 The CY = 1 and Z = 0
Hence (C) is correct answer.

n
eri
Statement for linked Answer Question 80 & 81 :
Consider a linear system whose state space representation is x (t) = Ax (t). If
1
the initial state vector of the system is x (0) = = G, then the system response is
e
−
e− x 1
x (t) = > H. If the itial state vector of the system changes to x (0) = =− G, then
gin
− e− t
e−t
the system response becomes x (t) = > −tH
−e
Q. 80 The eigenvalue and eigenvector pairs (λi vi) for the system are
En

1 1 1 1
(A) e− 1 = Go and e− 2 = Go (B) e− 1, = Go and e2, = Go
−1 −2 −1 −2
1 1 1 1
(C) e− 1, = Go and e− 2, = Go (D) e− 2 = Go and e1, = Go
arn

−1 −2 −1 −2
Sol. 80 Hence (A) is correct option.
We have xo (t) = Ax (t)
.Le

p q
A ==
r sG
Let

1 e− t
For initial state vector x (0) = = G the system response is x (t) = > H
− − e− t
w

d − t
p q 1
Thus > d dt − t H = =
e
dt (− e ) r s G=− G
ww

t=0
−2 (0)
− 2e p q 1
or > 4e−2 (0) H = =r s G=− G
−2 p− q
= 4 G = =r − s G

We get p − q =− 2 and r − s = ...(i)

1 e−t
For initial state vector x (0) = = G the system response is x (t) = > −tH
−1 −e
d −t
p q 1
Thus > d dt −t H = =
e
dt (− e ) r s G=− 1G
t=0

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− e− p q
> e− H = =r s G=− G
−1 p−q
= 1 G = =r − s G

We get p − q =− 1 and r − s = ...(2)

Solving (1) and (2) set of equations we get
p q 0 1
=r s G = =− 2 − 3G

The characteristic equation

n
λI - =0
A

g.i
λ 1-
=0
2 λ 3+
or λ (λ 3) +2 = 0 +

n
or λ =− 1, − 2

eri
Thus Eigen values are − 1 and − 2
Eigen vectors for λ1 =1 -
(λ1 I A
-) X1 = 0
e
λ1 1- x11
= 2 λ 3+G=x G = 0
gin
or
1 21
− 1 − 1 x11
= 2 2 G=x G = 0
21
En

or − x11 − x21 = 0
or x11 + x21 = 0
We have only one independent equation x11 =− x21.Let x11 = K , then x21 =− K ,
arn

the Eigen vector will be

x11 K 1
=x G = =− K G = K =− 1G
21

Now Eigen vector for λ2 =2 -

.Le

(λ2 I A-) X2 = 0
λ2 1- x12
or = 2 λ 3+G=x G = 0
2 22
w

− 2 − 1 x11
or = 2 1 G=x G = 0
21
ww

or − x11 − x21 = 0
or x11 + x21 = 0
We have only one independent equation x11 =− x21.
Let x11 = K, then x21 =− K , the Eigen vector will be
x12 K 1
=x G = =− 2K G = K =− 2G
22

Q. 81 The system matrix A is

0 1 1 1
(A) =
− 1 1G
(B) =
− 1 − 2G
2 1 0 1
(C) =
− 1 − 1G
(D) =
− 2 − 3G

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Sol. 81 As shown in previous solution the system matrix is

0 1
A ==
− 2 − 3G
Hence (D) is correct option.

Statement for Linked Answer Question 82 & 83 :

An input to a 6-level quantizer has the probability density function f (x) as shown
in the figure. Decision boundaries of the quantizer are chosen so as to maximize the
entropy of the quantizer output. It is given that 3 consecutive decision boundaries

n
are’ − 1'.'0' and '1' .

n g.i
Q. 82 The values of a and b are
(A) a = and b =
6
e eri (B) a = and b = 3
gin
(C) a = and b = (D) a = and b =
6 3
Sol. 82 Area under the pdf curve must be unity
Thus 2a + 4a + 4b = 1
En

2a + 8b = 1 ...(1)
For maximum entropy three region must by equivaprobable thus
arn

2a = 4b = 4b ...(2)
From (1) and (2) we get
b = 1 and a = 1
12 6
.Le

Hence (A) is correct option.

Q. 83 Assuming that the reconstruction levels of the quantizer are the mid-points of
the decision boundaries, the ratio of signal power to quantization noise power is
w

(A) 152 (B) 64

9 3
(C) 76
ww

(D) 28
3
Sol. 83 Hence correct option is ( )

Statement for Linked Answer Question 84 and 85 :

In the Digital-to-Analog converter circuit shown in the figure below,
VR = 1 V and R = 1 kΩ

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Q. 84 The current i is
(A) 31.25μA (B) 62.5μA

n
(C) 125μA (D) 250μA

g.i
Sol. 84 Since the inverting terminal is at virtual ground the resistor network can be
reduced as follows

n
e eri
gin
En

The current from voltage source is

arn

I = VR = = mA
R k
This current will be divide as shown below
w .Le
ww

-3
Now i = I = 1 # 10 = 62.5 μ A
16 16
Hence (B) is correct answer.
Q. 85 The voltage V is
(A) − 0.781 V (B) − 1.562 V

(C) − 3.125 V (D) − 6.250 V

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Sol. 85 The net current in inverting terminal of OP - amp is

I- = 1 + 1 = 5I
4 16 16
So that V =− R # I =−

Hence (C) is correct answer.

n
n g.i
e eri
gin
En
arn
w .Le
ww

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Answer Sheet
1. (A) 19. (A) 37. (B) 55. (D) 73. (C)
2. (B) 20. (D) 38. (D) 56. (D) 74. (B)
3. (C) 21. (C) 39. (D) 57. (A) 75. (A)
4. (A) 22. (A) 40. (C) 58. (D) 76. (A)
5. (D) 23. (C) 41. (D) 59. (C) 77. (C)
6. (A) 24. (D) 42. (B) 60. (B) 78. (B)

n
7. (D) 25. (B) 43. (A) 61. (C) 79. (C)

g.i
8. (C) 26. (C) 44. (C) 62. (B) 80. (A)
9. (D) 27. (A) 45. (A) 63. (A) 81. (D)
10. (C) 28. (D) 46. (C) 64. (C) 82. (A)

n
11. (C) 29. (D) 47. (A) 65. (D) 83. (*)
12.
13.
14.
(A)
(C)
(B)
30.
31.
32.
(A)
(D)
(A)
48.
49.
50.
e (A)

eri
(B)
(B)
66.
67.
68.
(A)
(C)
(D)
84.
85.
(B)
(C)
gin
15. (D) 33. (B) 51. (B) 69. (B)
16. (D) 34. (B) 52. (B) 70 (D)
17. (C) 35. (C) 53. (D) 71 (A)
En

18. (B) 36. (C) 54. (A) 72 (B)

**********
arn
w .Le
ww

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