The eGaN® FET
Journey Continues
GaN Transistors for Efficient Power Conversion
Alex Lidow
CEO
Efficient Power Conversion Corporation
EPC - The Leader in eGaN ® FETs |
Agenda
• Overview of eGaN FET Technology
• Improving Power Conversion Efficiency
• What is in the future?
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- The Leader in eGaN ® FETs | Corporation 2
Overview of eGaN® FET Technology
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 3
eGaN® FET Structure
AlGaN Electron Generating Layer
Dielectric
S G D Two Dimensional
- - - - - - - - - - - - - - - - - - - Electron Gas (2DEG)
GaN
Aluminum Nitride
Isolation Layer
Si
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 4
SEM of an eGaN® FET
eGaN® Is A Registered Trademark Of The Efficient Power Conversion Corporation
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 5
Flip-Chip LGA Construction
eGaN FET Silicon
Solder
Bar
Copper
Trace
Printed Circuit Board
Absolute Minimum
Lead Resistance and Inductance!
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- The Leader in eGaN ® FETs | Corporation 6
Size Comparison
D-PAK
eGaN® FET
5.76 mm²
Drawn To Scale 65.3 mm²
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- The Leader in eGaN ® FETs | Corporation 7
Opportunity to Improve
DC-DC Efficiency
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- The Leader in eGaN ® FETs | Corporation 8
Integrated Gate Driver Solution
LM5113 from Texas Instruments
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- The Leader in eGaN ® FETs | Corporation 9
Buck Converter
Advantage:
• High power density
and high efficiency
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- The Leader in eGaN ® FETs | Corporation 10
Efficiency vs Frequency
1.2 Vout / 5A
92%
90%
88%
86%
84%
82%
80%
Efficiency (%)
78%
76%
74%
MOSFET @ 12Vin
72%
MOSFET @ 24Vin
70%
MOSFET @ 48Vin
68%
eGaN FET @ 12Vin
66%
eGaN FET @ 24Vin
64%
eGaN FET @ 48Vin
62%
300 400 500 600 700 800
Switching Frequency (kHz)
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Parallel FET Buck Converter
Efficiency at 1 MHz
12 VIN – 1.2 VOUT
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- The Leader in eGaN ® FETs | Corporation 12
Isolated Full Bridge Converter
Advantage:
• Isolation and high power 12 V
15 A
density at high power 36~75 V 180 W
~53V
~48 V 700 W
2-phase
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- The Leader in eGaN ® FETs | Corporation 13
Isolated Full Bridge Converter
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- The Leader in eGaN ® FETs | Corporation 14
Isolated Full Bridge Converter
96% eGaN FET @ 333 kHz vs MOSFET @ 250 kHz
94%
92%
Efficiency
90%
36 V eGaN FET
36 V MOSFET
88%
48 V eGaN FET
48 V MOSFET
86%
60 V eGaN FET
60 V MOSFET
84%
0 2 4 6 8 10 12 14 16
Output Current (A)
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- The Leader in eGaN ® FETs | Corporation 15
PoE-PSE Full Bridge Converter
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- The Leader in eGaN ® FETs | Corporation 16
PoE-PSE Full Bridge Converter
98%
97%
250 kHz eGaN FET
96%
140 kHz MOSFET
95%
700 W
94%
550 W
Efficiency
93%
92%
91%
38 V eGaN FET 38 V MOSFET
90%
48 V eGaN FET 48 V MOSFET
89%
60 V eGaN FET 60 V MOSFET
88%
0 2 4 6 8 10 12 14
Output Current (A)
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 17
PoE-PSE Full Bridge Converter
98%
97%
96%
95%
94%
Efficiency
93%
92%
38 V Two phase 38 V Single phase
91%
90% 48 V Two phase 48 V Single phase
89%
60 V Two phase 60 V Single phase
88%
0 2 4 6 8 10 12 14
Output Current (A)
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- The Leader in eGaN ® FETs | Corporation 18
What is in the Future?
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- The Leader in eGaN ® FETs | Corporation 19
Breaking Down the Barriers
• Does it enable significant new
capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 20
Breaking Down the Barriers
• Does it enable significant new
capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 21
Applications for eGaN® FETs
–Power Over Ethernet
–Wireless power transmission
–RF DC-DC “Envelope Tracking”
–RF Transmission
–Network and Server Power Supplies
–Solar Microinverters
–LED Lighting
–Class D Audio
–Notebook Power Supply
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- The Leader in eGaN ® FETs | Corporation 22
In China Today
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- The Leader in eGaN ® FETs | Corporation 23
Application Success Story
Faster Transient Response
4x Frequency
75% Reduction
Control
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- The Leader in eGaN ® FETs | Corporation 24
Another Success Story
RF Power – Medical Radiation
Magnetron eGaN FET PA
500 MHz 1GHz
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- The Leader in eGaN ® FETs | Corporation 25
Wireless Power
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- The Leader in eGaN ® FETs | Corporation 26
RF Envelope Tracking
Fixed Dissipated as
Supply Heat Supply Voltage Dissipated as
Voltage Heat
Transmitted
Transmitted
Without Envelope Tracking With Envelope Tracking
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- The Leader in eGaN ® FETs | Corporation 27
Breaking Down the Barriers
• Does it enable significant new
capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 28
Is it easy to use?
It’s just like a MOSFET
except
The high frequency capability makes circuits using
eGaN FETs sensitive to layout
The lower VG(MAX) of 6 V makes it advisable to have VGS
regulation in your gate drive circuitry
The ultra-small LGA increases the concentration of heat
on the PCB
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 29
Breaking Down the Barriers
• Does it enable significant new
capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 30
Silicon vs eGaN® FET Wafer Costs
2010 2015
Starting Material same same
Epi Growth higher ~same?
Wafer Fab same lower
Test same same
Assembly lower lower
OVERALL higher lower!
EPC - The Leader in eGaN ® FETs | 31
Breaking Down the Barriers
• Does it enable significant new
capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 32
eGaN® FETs are Reliable
EPC2001 RDS(ON) after 100V DS HTRB at 125oC EPC2001 V GS(TH) after 100V DS HTRB at 125oC
2 2
1.8
1.8
1.6
1.6
Normalized Rdson
1.4
1.4 1.2
Vth (V)
1.2 1
1 0.8
0.8 0.6
0.6 0.4
0.4 0.2
0.2 0
0 0 200 400 600 800 1000
0 200 400 600 800 1000 Stress Hours
Stress Hours
EPC2015 Idss after 40V H3TRB at 85oC/85%RH
5.0E-04
EPC9001 Efficiency after Op Life Test at 85oC TJ
datasheet spec: 500uA max
1.1 4.0E-04
Normalized Efficiency
1.05 board a Idss@40V (A) 3.0E-04
board b
1 board c 2.0E-04
board d
0.95 board e 1.0E-04
0.9 0.0E+00
0 1000 2000 3000 0 200 400 600 800 1000
Stress Hours
Stress Hours
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Beyond 600 Volts
2012
1000.00
2011 250 mΩ
400 mΩ
400
5x6mm 5x6mm
Rated RDS(ON) mΩ
250
PQFN PQFN
2009 200 mΩ
100.00 100
5x6mm
90 mΩ
150 mΩ
PQFN 8x8mm
8x8mm PQFN
PQFN
25
10.00
7
4 LGA
Package
1.00
0 200 400 600 800 1000 1200 1400
Rated VDSS(MAX)
34
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- The Leader in eGaN ® FETs | Corporation 34
Beyond Discrete Devices
Driver On Board
Discrete FET with Driver
Full-Bridge with Driver and Level Shift
EPC - The Leader in eGaN ® FETs | 35
Summary
• eGaN FETs are easy to use but care must be taken
due to the higher switching speeds compared
with power MOSFETs
• eGaN FETs will replace silicon power MOSFETs in
power conversion applications with a low-cost
and higher efficiency solution
• Higher voltage devices and the integration of
analog plus power will enhance the performance
and cost-effectiveness of eGaN FETs
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 36
The end of the road
for silicon…..
is the beginning of
the eGaN FET
journey!
EPC - The Leader in eGaN ® FETs |