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IIC 2012 TW

The document discusses eGaN FET technology and its advantages in power conversion efficiency, highlighting its structure, applications, and future potential. It emphasizes the ease of use, cost-effectiveness, and reliability of eGaN FETs compared to traditional silicon MOSFETs. The presentation concludes that eGaN FETs are set to replace silicon in various applications due to their superior performance and integration capabilities.

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0% found this document useful (0 votes)
11 views37 pages

IIC 2012 TW

The document discusses eGaN FET technology and its advantages in power conversion efficiency, highlighting its structure, applications, and future potential. It emphasizes the ease of use, cost-effectiveness, and reliability of eGaN FETs compared to traditional silicon MOSFETs. The presentation concludes that eGaN FETs are set to replace silicon in various applications due to their superior performance and integration capabilities.

Uploaded by

gloock shi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 37

The eGaN® FET

Journey Continues

GaN Transistors for Efficient Power Conversion


Alex Lidow
CEO
Efficient Power Conversion Corporation

EPC - The Leader in eGaN ® FETs |


Agenda

• Overview of eGaN FET Technology

• Improving Power Conversion Efficiency

• What is in the future?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 2
Overview of eGaN® FET Technology

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 3
eGaN® FET Structure

AlGaN Electron Generating Layer


Dielectric

S G D Two Dimensional
- - - - - - - - - - - - - - - - - - - Electron Gas (2DEG)
GaN
Aluminum Nitride
Isolation Layer

Si

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 4
SEM of an eGaN® FET

eGaN® Is A Registered Trademark Of The Efficient Power Conversion Corporation


EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 5
Flip-Chip LGA Construction

eGaN FET Silicon


Solder
Bar

Copper
Trace

Printed Circuit Board

Absolute Minimum
Lead Resistance and Inductance!
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 6
Size Comparison
D-PAK

eGaN® FET

5.76 mm²

Drawn To Scale 65.3 mm²


EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 7
Opportunity to Improve
DC-DC Efficiency

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 8
Integrated Gate Driver Solution

LM5113 from Texas Instruments


EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 9
Buck Converter

Advantage:
• High power density
and high efficiency

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 10
Efficiency vs Frequency
1.2 Vout / 5A
92%
90%
88%
86%
84%
82%
80%
Efficiency (%)

78%
76%
74%
MOSFET @ 12Vin
72%
MOSFET @ 24Vin
70%
MOSFET @ 48Vin
68%
eGaN FET @ 12Vin
66%
eGaN FET @ 24Vin
64%
eGaN FET @ 48Vin
62%
300 400 500 600 700 800
Switching Frequency (kHz)
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 11
Parallel FET Buck Converter
Efficiency at 1 MHz

12 VIN – 1.2 VOUT

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 12
Isolated Full Bridge Converter
Advantage:
• Isolation and high power 12 V
15 A
density at high power 36~75 V 180 W

~53V
~48 V 700 W
2-phase

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 13
Isolated Full Bridge Converter

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 14
Isolated Full Bridge Converter
96% eGaN FET @ 333 kHz vs MOSFET @ 250 kHz

94%

92%
Efficiency

90%
36 V eGaN FET
36 V MOSFET
88%
48 V eGaN FET
48 V MOSFET
86%
60 V eGaN FET
60 V MOSFET
84%
0 2 4 6 8 10 12 14 16
Output Current (A)
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 15
PoE-PSE Full Bridge Converter

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 16
PoE-PSE Full Bridge Converter
98%

97%
250 kHz eGaN FET
96%
140 kHz MOSFET
95%

700 W
94%
550 W
Efficiency

93%

92%

91%

38 V eGaN FET 38 V MOSFET


90%

48 V eGaN FET 48 V MOSFET


89%
60 V eGaN FET 60 V MOSFET
88%
0 2 4 6 8 10 12 14
Output Current (A)

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 17
PoE-PSE Full Bridge Converter
98%

97%

96%

95%

94%
Efficiency

93%

92%

38 V Two phase 38 V Single phase


91%

90% 48 V Two phase 48 V Single phase

89%
60 V Two phase 60 V Single phase
88%
0 2 4 6 8 10 12 14
Output Current (A)

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 18
What is in the Future?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 19
Breaking Down the Barriers

• Does it enable significant new


capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 20
Breaking Down the Barriers

• Does it enable significant new


capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 21
Applications for eGaN® FETs
–Power Over Ethernet
–Wireless power transmission
–RF DC-DC “Envelope Tracking”
–RF Transmission
–Network and Server Power Supplies
–Solar Microinverters
–LED Lighting
–Class D Audio
–Notebook Power Supply

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 22
In China Today

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 23
Application Success Story
Faster Transient Response

4x Frequency

75% Reduction
Control

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 24
Another Success Story
RF Power – Medical Radiation

Magnetron eGaN FET PA


500 MHz 1GHz
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 25
Wireless Power

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 26
RF Envelope Tracking

Fixed Dissipated as
Supply Heat Supply Voltage Dissipated as
Voltage Heat

Transmitted

Transmitted

Without Envelope Tracking With Envelope Tracking

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 27
Breaking Down the Barriers

• Does it enable significant new


capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 28
Is it easy to use?
It’s just like a MOSFET
except
The high frequency capability makes circuits using
eGaN FETs sensitive to layout
The lower VG(MAX) of 6 V makes it advisable to have VGS
regulation in your gate drive circuitry
The ultra-small LGA increases the concentration of heat
on the PCB

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 29
Breaking Down the Barriers

• Does it enable significant new


capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 30
Silicon vs eGaN® FET Wafer Costs

2010 2015
Starting Material same same
Epi Growth higher ~same?
Wafer Fab same lower
Test same same
Assembly lower lower

OVERALL higher lower!

EPC - The Leader in eGaN ® FETs | 31


Breaking Down the Barriers

• Does it enable significant new


capabilities?
• Is it easy to use?
• Is it VERY cost effective to the user?
• Is it reliable?

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 32
eGaN® FETs are Reliable
EPC2001 RDS(ON) after 100V DS HTRB at 125oC EPC2001 V GS(TH) after 100V DS HTRB at 125oC
2 2
1.8
1.8
1.6
1.6
Normalized Rdson

1.4
1.4 1.2

Vth (V)
1.2 1
1 0.8
0.8 0.6
0.6 0.4
0.4 0.2
0.2 0
0 0 200 400 600 800 1000

0 200 400 600 800 1000 Stress Hours


Stress Hours
EPC2015 Idss after 40V H3TRB at 85oC/85%RH
5.0E-04
EPC9001 Efficiency after Op Life Test at 85oC TJ
datasheet spec: 500uA max
1.1 4.0E-04
Normalized Efficiency

1.05 board a Idss@40V (A) 3.0E-04


board b

1 board c 2.0E-04
board d

0.95 board e 1.0E-04

0.9 0.0E+00
0 1000 2000 3000 0 200 400 600 800 1000
Stress Hours
Stress Hours

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 33
Beyond 600 Volts
2012
1000.00
2011 250 mΩ
400 mΩ
400
5x6mm 5x6mm
Rated RDS(ON) mΩ

250
PQFN PQFN
2009 200 mΩ
100.00 100
5x6mm
90 mΩ
150 mΩ
PQFN 8x8mm
8x8mm PQFN
PQFN
25
10.00
7
4 LGA
Package

1.00
0 200 400 600 800 1000 1200 1400

Rated VDSS(MAX)

34
EPC ©2012 Efficient Power Conversion
- The Leader in eGaN ® FETs | Corporation 34
Beyond Discrete Devices
Driver On Board

Discrete FET with Driver

Full-Bridge with Driver and Level Shift

EPC - The Leader in eGaN ® FETs | 35


Summary
• eGaN FETs are easy to use but care must be taken
due to the higher switching speeds compared
with power MOSFETs
• eGaN FETs will replace silicon power MOSFETs in
power conversion applications with a low-cost
and higher efficiency solution
• Higher voltage devices and the integration of
analog plus power will enhance the performance
and cost-effectiveness of eGaN FETs

EPC ©2012 Efficient Power Conversion


- The Leader in eGaN ® FETs | Corporation 36
The end of the road
for silicon…..

is the beginning of
the eGaN FET
journey!

EPC - The Leader in eGaN ® FETs |

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