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2SB616153

The document provides the product specification for the Silicon PNP Power Transistor 2SB616, detailing its package type, applications, pin configuration, and absolute maximum ratings. It includes electrical characteristics such as breakdown voltages, saturation voltage, and current gain. Additionally, the document features an outline of the package dimensions.

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Jose Angel Torrealba
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8 views3 pages

2SB616153

The document provides the product specification for the Silicon PNP Power Transistor 2SB616, detailing its package type, applications, pin configuration, and absolute maximum ratings. It includes electrical characteristics such as breakdown voltages, saturation voltage, and current gain. Additionally, the document features an outline of the package dimensions.

Uploaded by

Jose Angel Torrealba
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB616

DESCRIPTION
·With TO-3PN package
·Complement to type 2SD586

APPLICATIONS
·For power amplifier applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connecte
2
d to mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Tc=25 )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -100 V

VCEO Collector-emitter voltage Open base -100 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -5 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB616

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown IC=-30mA ;IB=0 -100 V


voltage

V(BR)CBO Collector-base breakdown IC=-1mA ;IE=0 -100 V


voltage

V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V

VCEsat Collector-emitter saturation IC=-3A ;IB=-0.3A -1.5 V


voltage

VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA

IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA

hFE-1 DC current gain IC=-1A ; VCE=-5V 50

fT Transition frequency IC=-1A ; VCE=-5V 11 MHz

COB Collector output capacitance IE=0;f=1MHz;VCB=-10V 140 pF

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB616

PACKAGE OUTLINE

Fig.2 outline dimensions

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