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LM4562 Dual High Performance, High Fidelity Audio Operational Amplifier Datasheet (Rev. K)

The LM4562 is a dual high-performance audio operational amplifier designed for superior audio signal fidelity and optimized for high-fidelity applications. It features low distortion, low noise, and high slew rate, making it suitable for driving complex loads in professional audio equipment. Key specifications include a power supply range of ±2.5V to ±17V, a total harmonic distortion plus noise (THD+N) of 0.00003%, and a slew rate of ±20V/μs.

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0% found this document useful (0 votes)
256 views5 pages

LM4562 Dual High Performance, High Fidelity Audio Operational Amplifier Datasheet (Rev. K)

The LM4562 is a dual high-performance audio operational amplifier designed for superior audio signal fidelity and optimized for high-fidelity applications. It features low distortion, low noise, and high slew rate, making it suitable for driving complex loads in professional audio equipment. Key specifications include a power supply range of ±2.5V to ±17V, a total harmonic distortion plus noise (THD+N) of 0.00003%, and a slew rate of ±20V/μs.

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LM4562

www.ti.com SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013

LM4562 Dual High-Performance, High-Fidelity Audio Operational Amplifier


Check for Samples: LM4562

1FEATURES DESCRIPTION

2 Easily Drives 600Ω Loads The LM4562 is part of the ultra-low distortion, low-
noise, high-slew-rate operational amplifier series
• Optimized for Superior Audio Signal Fidelity optimized and fully specified for high-performance,
• Output Short Circuit Protection high-fidelity applications. The LM4562 audio
• PSRR and CMRR Exceed 120dB (Typ) operational amplifiers deliver superior audio signal
amplification for outstanding audio performance. The
• SOIC, PDIP, and TO-99 Packages
LM4562 combines extremely low voltage noise
density (2.7nV/√Hz) with vanishingly low THD+N
APPLICATIONS (0.00003%) to easily satisfy the most demanding
• Ultra High-Quality Audio Amplification audio applications. To ensure that the most
challenging loads are driven without compromise, the
• High-Fidelity Preamplifiers
LM4562 has a high slew rate of ±20V/μs and an
• High-Performance Professional Audio output current capability of ±26mA. Further, dynamic
• High-Fidelity Active Equalization and range is maximized by an output stage that drives
Crossover Networks 2kΩ loads to within 1V of either power supply voltage
and to within 1.4V when driving 600Ω loads.
• High-Performance Line Drivers and Receivers
The LM4562's outstanding CMRR (120dB), PSRR
KEY SPECIFICATIONS (120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
• Power Supply Voltage Range: ±2.5V to ± 17V
• THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) The LM4562 has a wide supply range of ±2.5V to
±17V. Over this supply range the LM4562’s input
– RL = 2kΩ: 0.00003% (typ) circuitry maintains excellent common-mode and
– RL = 600Ω: 0.00003% (typ) power supply rejection, as well as maintaining its low
• Input Noise Density: 2.7nV/√Hz (typ) input bias current. The LM4562 is unity gain stable.
This Audio Operational Amplifier achieves
• Slew Rate: ±20V/μs (typ) outstanding AC performance while driving complex
• Gain Bandwidth Product: 55MHz (typ) loads with values as high as 100pF.
• Open Loop Gain (RL = 600Ω): 140dB (typ) The LM4562 is available in an 8-lead narrow body
• Input Bias Current: 10nA (typ) SOIC, an 8-lead PDIP, and an 8-lead TO-99.
• Input Offset Voltage: 0.1mV (typ)
• DC Gain Linearity Error: 0.000009%

TYPICAL APPLICATION
150: 3320: 150: 3320:

26.1 k:
- + -
909:
LM4562 LM4562
+ 22 nF//4.7 nF//500 pF 3.83 k: + OUTPUT
10 pF +
INPUT 47 k: 100:

47 nF//33 nF

A. 1% metal film resistors, 5% polypropylene capacitors

Passively Equalized RIAA Phono Preamplifier


1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2006–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM4562
SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013 www.ti.com

CONNECTION DIAGRAMS
Dual-In-Line Package +
V

8
1 8 +
OUTPUT A V OUTPUT A 1 7 OUTPUT B

INVERTING INVERTING
2 6
2 7 INPUT A INPUT B
INVERTING INPUT A OUTPUT B

A B NON-INVERTING NON-INVERTING
3 5
INPUT A INPUT B
- + + - 4
NON-INVERTING 3 6
INPUT A
INVERTING INPUT B -
V

- 4 5 NON-INVERTING
V
INPUT B

Figure 1. 8-Lead SOIC (D Package) Figure 2. 8-Lead TO-99 (LMC Package)


8-Lead PDIP (P Package)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS (1) (2) (3)


Power Supply Voltage (VS = V+ - V-) 36V
Storage Temperature −65°C to 150°C
Input Voltage (V-) - 0.7V to (V+) + 0.7V
(4)
Output Short Circuit Continuous
Power Dissipation Internally Limited
ESD Susceptibility (5) 2000V
(6)
ESD Susceptibility Pins 1, 4, 7 and 8 200V
Pins 2, 3, 5 and 6 100V
Junction Temperature 150°C
Thermal Resistance θJA (D) 145°C/W
θJA (P) 102°C/W
θJA (LMC) 150°C/W
θJC (LMC) 35°C/W
Temperature Range (TMIN ≤ TA ≤ TMAX) –40°C ≤ TA ≤ 85°C
Supply Voltage Range ±2.5V ≤ VS ≤ ± 17V

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5kΩ resistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).

2 Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated

Product Folder Links: LM4562


LM4562
www.ti.com SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013

ELECTRICAL CHARACTERISTICS FOR THE LM4562 (1) (2)


The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified.
LM4562 Units
Symbol Parameter Conditions
Typical (3)
Limit (4) (Limits)
AV = 1, VOUT = 3Vrms
THD+N Total Harmonic Distortion + Noise RL = 2kΩ 0.00003 % (max)
RL = 600Ω 0.00003 0.00009
AV = 1, VOUT = 3VRMS
IMD Intermodulation Distortion 0.00005 %
Two-tone, 60Hz & 7kHz 4:1
GBWP Gain Bandwidth Product 55 45 MHz (min)
SR Slew Rate ±20 ±15 V/μs (min)
VOUT = 1VP-P, –3dB
FPBW Full Power Bandwidth referenced to output magnitude 10 MHz
at f = 1kHz
AV = –1, 10V step, CL = 100pF
ts Settling time 1.2 μs
0.1% error range
Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 μVRMS
(max)
en
f = 1kHz 2.7 4.7 nV/√Hz
Equivalent Input Noise Density
f = 10Hz 6.4 (max)
in f = 1kHz 1.6
Current Noise Density pA/√Hz
f = 10Hz 3.1
VOS Offset Voltage ±0.1 ±0.7 mV (max)
Average Input Offset Voltage Drift vs
ΔVOS/ΔTemp –40°C ≤ TA ≤ 85°C 0.2 μV/°C
Temperature
Average Input Offset Voltage Shift vs
PSRR ΔVS = 20V (5) 120 110 dB (min)
Power Supply Voltage
fIN = 1kHz 118
ISOCH-CH Channel-to-Channel Isolation dB
fIN = 20kHz 112
IB Input Bias Current VCM = 0V 10 72 nA (max)
Input Bias Current Drift vs
ΔIOS/ΔTemp –40°C ≤ TA ≤ 85°C 0.1 nA/°C
Temperature
IOS Input Offset Current VCM = 0V 11 65 nA (max)
Common-Mode Input Voltage Range +14.1 (V+) – 2.0
VIN-CM V (min)
–13.9 (V-) + 2.0
CMRR Common-Mode Rejection –10V<Vcm<10V 120 110 dB (min)
Differential Input Impedance 30 kΩ
ZIN
Common Mode Input Impedance –10V<Vcm<10V 1000 MΩ
–10V<Vout<10V, RL = 600Ω 140 125
AVOL Open Loop Voltage Gain –10V<Vout<10V, RL = 2kΩ 140 dB (min)
–10V<Vout<10V, RL = 10kΩ 140
RL = 600Ω ±13.6 ±12.5
VOUTMAX Maximum Output Voltage Swing RL = 2kΩ ±14.0 V (min)
RL = 10kΩ ±14.1
IOUT Output Current RL = 600Ω, VS = ±17V ±26 ±23 mA (min)
+53
IOUT-CC Instantaneous Short Circuit Current mA
–42
fIN = 10kHz
ROUT Output Impedance Closed-Loop 0.01 Ω
Open-Loop 13

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) Typical specifications are specified at +25ºC and represent the most likely parametric norm.
(4) Tested limits are specified to AOQL (Average Outgoing Quality Level).
(5) PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = | 20log(ΔVOS/ΔVS) |.
Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM4562
LM4562
SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013 www.ti.com

ELECTRICAL CHARACTERISTICS FOR THE LM4562(1)(2) (continued)


The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified.
LM4562 Units
Symbol Parameter Conditions
Typical (3)
Limit (4) (Limits)
CLOAD Capacitive Load Drive Overshoot 100pF 16 %
IS Total Quiescent Current IOUT = 0mA 10 12 mA (max)

4 Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated

Product Folder Links: LM4562


LM4562
www.ti.com SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013

TYPICAL PERFORMANCE CHARACTERISTICS


THD+N vs Output Voltage THD+N vs Output Voltage
VCC = 15V, VEE = –15V VCC = 12V, VEE = –12V
RL = 2kΩ RL = 2kΩ
0.01 0.01

0.005 0.005

0.002 0.002
0.001 0.001

THD+N (%)
THD+N (%)

0.0005 0.0005

0.0002 0.0002
0.0001 0.0001
0.00005 0.00005

0.00002 0.00002
0.00001 0.00001
10m 100m 1 10 20 10m 100m 1 10 20
OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V)
Figure 3. Figure 4.

THD+N vs Output Voltage THD+N vs Output Voltage


VCC = 17V, VEE = –17V VCC = 2.5V, VEE = –2.5V
RL = 2kΩ RL = 2kΩ
0.01 0.01
0.005 0.005

0.002 0.002
0.001 0.001
THD+N (%)

THD + N (%)

0.0005 0.0005

0.0002 0.0002
0.0001 0.0001
0.00005 0.00005

0.00002 0.00002
0.00001 0.00001
10m 100m 1 10 20 100m 200m 500m 1 2 5 10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)

Figure 5. Figure 6.

THD+N vs Output Voltage THD+N vs Output Voltage


VCC = 15V, VEE = –15V VCC = 12V, VEE = –12V
RL = 600Ω RL = 600Ω
0.01 0.01

0.005 0.005

0.002 0.002
0.001 0.001
THD+N (%)
THD+N (%)

0.0005 0.0005

0.0002 0.0002
0.0001 0.0001
0.00005 0.00005

0.00002 0.00002
0.00001 0.00001
10m 100m 1 10 20 10m 100m 1 10 20
OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V)

Figure 7. Figure 8.

Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 5


Product Folder Links: LM4562

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