Mmerials Science and Engineering, A //6 (1989) 205-208 205
A Newly Developed Linear Ion Implanter for Industrial Applications~:
F. J. KORBER, W. D. MONZ, H. RANKE and ST. REINECI<
Leybold AG, Wilhellll-Rohn-S/lmse 25,0-6450 Hanall (F.R.G.)
H. J. FOSSER and H. OECHSNER
Uni"ersi,ii, Kaiserslalllem, Kaiserslalllem (F.R. G.)
(Received September 16, 1988)
Abstract 2. Description of the implanter
The design of a new ion implanter/or industrial Figure 1 shows the complete plant. The figure
applications is described. The ion source is a displays, from left to right, the process chamber
special development and is based on high fre- with the source part, the high voltage supply and
quency, electrodeless plasma generation. With a the operation bar. The ribbon-shaped, not-mass-
slit-formed three-electrode system, a line-shaped separated ion beam enters the process chamber
ion beam with a transverse length of 30 cm can be vertically and centrally. Ion source and vacuum
extracted and accelerated. The ion implanter is chamber are separated via a valve and are
designed for continuous processing of 100ge-area
swfaces, such as foils, metal plates or a la/ger
number of smaller parts. In the process chamber,
parts of area up to 50 cm x 50 cm can be
implanted. The actual ion current is 20 mA at
150 kV.
1. Introduction
An implanter suitable for implanting large
areas with high ion doses must fulfil the following
demands: high beam current; large implantation
area; sample cooling; high peIiormance; opera-
tional safety; reduction in downtime.
In contrast to ion implanters designed for the
needs of the semiconductor industry, the Leybold
implanter is supplied with a ribbon-shaped, large-
area, high current ion beam. With the peIiormed
beam shape of 300 mm x 100 mm there is no
need for complicated beam scanning or target
manipulation. With the help of a cooled sample
support plate it is possible to implant large areas
in a short time. The source part can be indepen-
dently adapted to specially designed vacuum
chambers.
"Paper presented at the Sixth International Conference on
Surface Modification of Metals by [on Beams, Riva del
Garda, Italy, September 12-16, 1988. Fig. I. View of the plant.
0921-5093/891$3.50 © Elsevier Sequoia/Printed in The Netherlands
206
TABLE 1 Delails of the implanter
Technical data
Extraction voltage 30kY
Acceleration voltage 0-150 kY
Maximum ion curt:ent 40mA
Maximum beam power 6000W
Dimensions of vacuum chamber (IV x d x h) 1000 mm x 700 mm x 600 mm
Water-cooled X-." sample manipulator
Maximum sample dimensions 500 mm x 500 mm
Ion source
Inductively coupled d. ion slit source
Aperture length 300mm
Working pressure 10-~mbar
Plasma density 10 10 -10 11 cm-.1
Ion beam cross-section at the target (adjustable by means of accelerator gap) 300 mm X(IO-IOO mm)
Pumping sysrem
Chamber: cryopump RPK2500
Pumping capacity 2500 I s- 1
Pumping time to 1.5 x 10-1> mbar 30 min
Ion source: turbomolecular pump Turbovac 360
Pumping capacity 360 IS-I
pumped separately. Table 1 lists the essential
data. The most important components are
described as follows.
2.1. Ion source and acceleration
The high frequency ion source is based on a
prototype developed at the University of Kaisers-
lautern [1]. This radio-frequency ion source uses
the so-called electron cyclotron wave resonance
for electrodeless plasma excitation in the 10- 4
mbar range [2]. Based on the high plasma ioniza- Fig. 2. Schematic drawing of the linear ion source.
tion degree of several 10 - 2, beam currents of
several milliamps per square centimetre have
been achieved. The line-shaped source can be 2.2. Power supply
operated with all types of gases. Metal ion beams The power supplies for the high voltage poten-
can be produced by injecting metal atoms into the tial are air insulated and located in two housings
source plasma from a large-area sputtering target. at source and extraction potential. They are sup-
Subsequently, the atoms become ionized by the plied by two independent 150 kV insulation
hot electron component of the plasma (electron transformers. Table 2 summarizes the power
temperature (1-2) x 10 5 K). supply unit data.
Figure 2 shows a schematic view of the ion
source. The source being used at LH is equipped
with a 30 cm slit-shaped accel-decel extraction 2.3. Process chamber
system. The ion beam is extracted with energies The vacuum chamber, with dimensions (width x
of up to 30 kV and is post-accelerated up to 150 depth x height) of 1000 mm x 700 mm x 600 mm,
kV The line-shaped beam can be focused in the allows irradiation of parts up to 500 mm. The
vertical plane from 100 to 10 mm by means of an ion beam enters the chamber vertically and
adjustable post-acceleration gap. Thus it is pos- centrally. Evacuation is done by a 2500 I s - t
sible to vary the dose rate and to reduce sputter- cryopump. After a pumping time of 30 min, the
ing effects during implantation of shafts [3]. pressure in the chamber is 1.5 x 10- 6 mbar. In
207
TABLE 2 Implanter power supplies and potentiaIs
Radio frequency 13.56 MHz 500W Source potential
Extraction 30kV 100 mA Extraction potential
Suppression 3.5 kV 10mA Extraction potential
Magnet 65 V 2A Extraction potential
Post-acceleration 150 kV 40mA Ground
Suppression 3.5 kV lOmA Ground
Fig. 3. Process chamber with water,cooled x-y table.
order to implant large areas simultaneously, the
chamber is equipped with a water-cooled numeri-
cally controlled table (Fig. 3). The handling system
can be modified depending on the parts which are
to be implanted. Figures 4(a) and 4(b) show the ion
beam from the transverse and longitudinal direc-
tions during the implantation of a turbine blade
(nitrogen, 10 mA, 80 kY).
3. Process control
Fig. 4. (a) Transverse and (b) longitudinal view of the ion
In order to get reproducible results, accurate beam implantation of a turbine blade.
process control is necessary. Parameters of
importance are mass spectrum, ion dose, dose
rate, energy and temperature of the implanted ion beam. The operator can check the homo-
substrate. In addition, residual gas analysis should geneity of the linear ion beam in length and cross-
be performed as well as the determination of ion direction with the aid of the Faraday cup
species. Figure 5 shows how such simultaneous arrangement.
process control is managed during an implanta- Approximately 90% of the ion beam length is
tion process. The temperature of the substrate is sufficient to use for the ion implantation process.
measured contactlessly by means of an IR pyro- The dose rate can be varied by focusing the
meter. In order to get calibrated values, simul- beam.
taneous thermocouple measurements can be A PGA 100 residual gas analyser r;an be incor-
performed. On the left side of Fig. 5, several porated in order to get information about the
linearly aligned Faraday cups are shown. Simul- composition of the residual gases in the chamber
taneously with the implantation process, the during the process.
accurate dose is measured as a function of time Figure 6 shows a mass separator system cur-
and also as a function of the location within the rently under development which can be rotated
208
Fig. 7. In-line concept for combined processes.
as well as neutrals by measurement of the second-
ary electrons.
In order to control the complete set of para-
meters which are relevant to an implantation pro-
cess, a computerized data-logging system is used
to handle data acquisition. Besides the dose and
the substrate temperature, all other parameters
which are of relevance to the ion implantation
Fig. 5. Process control: temperature, beam density and process are measured and stored simultaneously
residual gas analysis. on a compact disc.
4. Modular design of the LH ion implanter
Based on the present single-chamber plant,
Fig. 7 shows the modular concept of a projected
in-line implanter. The basic ion implantation
module can be equipped additionally with load-
ing and unloading chambers. In order to allow
combined processes, an additional coating
chamber can be installed.
For the implanter shown in Fig. 1, an addi-
tional sputtering section can be inserted in the
process chamber for utilizing ion-beam-mixing
processes.
The ion-beam-mixing process will play an
important role in the future because of shorter
processing time in comparison with direct ion
implantation, reduced temperature and reduced
absorption of residual gas during implantation.
Acknowledgment
This work has been supported by the Bundes-
Fig. 6. Ion beam analysis with a small mass separator system. ministerium fur Forschung und Technologie
under Grant FZK N 5354.
and positioned at every desired position in the
ion beam. A sm'all percentage of ions are References
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alld Plasma Assis/ed Techlliques, Brigh/oll, }\tlay 1987.
separated according to elm ratio by means of a
2 H. Oechsner, Plasma Phys., 16 (1974) 835.
magnetic field. the magnetic mass separator 3 A. Wittkower and J. K. Hirvonen, Nue/. IlIs/l'l1m. Me/hods
allows the determination of different ion species B, 6 (1985) 78.
