Shri Vile Parle Kelavani Mandal’s
INSTITUTE OF TECHNOLOGY
Dhule (M.S.)
Remarks
Subject: Basic Electrical and Electronics Engineering
Code:Lab24AF1000ES207L
Name: Roll No:
Class: Branch: Division:
Signature
Exp. No: Date : / /20
Title: V-I Characteristics of BJT
OBJECTIVE:
Study of V-I characteristics of BJT
APPARATUS:
Sr. Name of Equipment Specification Qty
No.
1. BJT characteristics kit
2. Digital Multimeter
3. Probes
4. Power Supply
THEORY:
Transistors: Bipolar Junction Transistors (BJT) General configuration and definitions The transistor is the
main building block “element” of electronics. It is a semiconductor device and it comes in two general types:
the Bipolar Junction Transistor (BJT) and the Field Effect Transistor (FET). Here we will describe the system
characteristics of the BJT configuration and explore its use in fundamental signal shaping and amplifier
circuits. The BJT is a three terminal device and it comes in two different types. The NPN BJT and the PNP
BJT. The BJT symbols and their corresponding block diagrams are shown on Figure 1. The BJT is fabricated
with three separately doped regions. The NPN device has one p region between two n regions and the PNP
device has one n region between two p regions. The BJT has two junctions (boundaries between the n and the
p regions). These junctions are similar to the junctions we saw in the diodes and thus they may be forward
biased or reverse biased. By relating these junctions to a diode model the PNP BJT may be modeled as shown
on Figure 2. The three terminals of the BJT are called the Base (B), the Collector (C) and the Emitter
Since each junction has two possible states of operation (forward or reverse bias) the BJT with its two
junctions has four possible states of operation. For a detailed description of the BJT structure see: Jaeger
and Blalock, Microelectronic Circuit Design, McGraw Hill. Here it is sufficient to say that the structure as
shown on Figure 1 is not symmetric. The n and p regions are different both geometrically and in terms of
the doping concentration of the regions.. Therefore, the behavior of the device is not electrically
symmetric and the two ends cannot be interchanged. Before proceeding let’s consider the BJT npn
structure shown on Figure 3
With the voltage and as shown, the Base-Emitter (B-E) junction is forward biased and the Base-Collector (B-
C) junction is reverse biased. VBE VCB The current through the B-E junction is related to the B-E voltage as
Due to the large differences in the doping concentrations of the emitter and the base regions the electrons
injected into the base region (from the emitter region) results in the emitter current EI . Furthermore, the
number of electrons injected into the collector region is directly related to the electrons injected into the base
region from the emitter region. Therefore, the collector current is related to the emitter current which is in
turn a function of the B-E voltage.
CIRCUIT DIAGRAM
The V-I characteristics of BJT is a shown below
PROCEDURE:
INPUT CHARACTERISTICS -
1. Connect the circuit as per the diagram.
2. Keep the meter selector switch on milliampere scale.
3. In the connections collector bias is -Ve w.r.t base and emitter bias are positive w.r.t base.
4. Adjust the collector to base voltage VCB is at suitable value (-2v).
5. By adjusting input supply set the emitter current to a small but measurable value at 5mA note down
the emitter to base voltage VEB . increase the VEB in small steps and note down the corresponding
emitter current IE..
6. Repeat the steps no.2&3 for another values of collector voltages (-6v,-8v).
7. Plot a graph between VEB and IE.
OUTPUT CHARACTERISTICS: -
1. Adjust the emitter current IE to a suitable value (say 10mA).
2. set collector voltage VCB to 0.5v and note down the corresponding collector current IC gradually
increase the collector voltage VCB in steps and note down the corresponding values of collector
current IC keeping the emitter current IE. is const.
3. Repeat the steps no 2&3 for another values of emitter currents (say 15mA,20mA).
1. Plot a graph between VCB and IC..
OBSERVATION TABLE:
CONCLUSION:
