Plastic-Encapsulate Transistors
BFR93A (NPN)
FEATURES
For low-noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
1. BASE
2. EMITTER SOT-23
3. COLLECTO
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC 50 mA
Base current IB 6
Total power dissipation, TS 63 °C 1) Ptot 300 mW
Junction temperature Tj 150 °C
Ambient temperature TA -65 ... 150
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS 290 K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R please refer to Application Note Thermal Resistance
thJA
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Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) BFR93A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CEO 12 - - V
IC = 1 mA, IB = 0
Collector-emitter cutoff current ICES - - 100 µA
VCE = 20 V, VBE = 0
Collector-base cutoff current ICBO - - 100 nA
VCB = 10 V, IE = 0
Emitter-base cutoff current IEBO - - 10 µA
VEB = 2 V, IC = 0
DC current gain hFE 50 100 200 -
IC = 30 mA, VCE = 8 V
AC characteristics (verified by random sampling)
Transition frequency fT 4.5 6 - GHz
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance Ccb - 0.58 0.9 pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance Cce - 0.23 -
VCE = 10 V, f = 1 MHz
Emitter-base capacitance Ceb - 1.7 -
VEB = 0.5 V, f = 1 MHz
Noise figure F dB
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz - 2 -
f = 1.8 GHz - 3.3 -
Power gain, maximum available 1) Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz - 13.5 -
f = 1.8 GHz - 8.5 -
Transducer gain |S21e|2
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz - 12 - -
f = 1.8 GHz - 6.5 -
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P4 - P2
Plastic-Encapsulate Transistors
BFR93A Typical Characteristics
10 3 10 2
400
Ptotmax / PtotDC
mW
K/W
-
300 RthJS D=0
10 2 0.005
P tot
TS 0.01
250
0.02
10 1
0.05
200 0.1
0.5 0.2
0.2 0.5
150 0.1
10 1 0.05
0.02
100 0.01
0.005
D=0
50
10 0 -7 10 0 -7 -6 -5 -4 -3 -2 0
-6 -5 -4 -3 -2 0
0 10 10 10 10 10 10 s 10 10 10 10 10 10 10 s 10
0 20 40 60 80 100 120 °C 150
TS tp tp
Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load
Ptotmax/P totDC = f (tp)
CE
14
1.5 6.0 10V
10V
pF GHz 5V
2V 3V
5.0 dB
1.2 2V
4.5
1.1
Ccb
1.0 4.0
G
fT
1V 10
0.9 3.5
0.8
3.0
0.7 1V
2.5 8
0.6 0.7V
0.5 2.0
0.4 1.5
6
0.3
1.0
0.2
0.5 0.7V
0.1
4
0.0 0.0 0 10 20 30 40 mA 60
0 4 8 12 16 V 22 0 10 20 30 40 mA 60
IC
VCB IC
Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) Power Gain Gma , Gms = f(IC )
f = 1MHz f = 0.9GHz
V = Parameter VCE = Parameter
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P4 - P3
Plastic-Encapsulate Transistors
BFR93A Typical Characteristics
16 32
IC=30mA 8V
dBm
dB 0.9GHz 5V
28
0.9GHz
12 26 3V
IP 3
24
G
10
22
2V
1.8GHz
20
8
1.8GHz 18
6 16
1V
14
4
12
2 10
0 2 4 6 8 V 12 0 10 20 30 40 mA 60
VCE IC
Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC)
|S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50)
f = Parameter VCE = Parameter, f = 900MHz
32 30
IC=30mA IC =30mA
dB dB
24 22
S21
20 18
G
16 14
12 10
8 6
10V
10V
4 1V 2 1V
0.7V
0.7V
0 -2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f f
Power Gain Gma , Gms = f(f) Power Gain |S21|2= f(f)
VCE = Parameter V CE = Parameter
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