MCP1801

150 mA, High PSRR, Low Quiescent Current LDO

Features: Description:
• 150 mA Maximum Output Current The MCP1801 is a family of CMOS low dropout (LDO)
• Low Dropout Voltage, 200 mV typical @ 100 mA voltage regulators that can deliver up to 150 mA of
• 25 µA Typical Quiescent Current current while consuming only 25 µA of quiescent
current (typical). The input operating range is specified
• 0.01 µA Typical Shutdown Current
from 2.0V to 10.0V, making it an ideal choice for two to
• Input Operating Voltage Range: 2.0V to 10.0V six primary cell battery-powered applications, 9V
• Standard Output Voltage Options: alkaline and one or two cell Li-Ion-powered
- 0.9V, 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V, 6.0V applications.
• Output Voltage Accuracy: The MCP1801 is capable of delivering 100 mA with
- ±2% (VR > 1.5V), ±30 mV (VR  1.5V) only 200 mV (typical) of input to output voltage
• Stable with Ceramic Output Capacitors differential (VOUT = 3.3V). The output voltage tolerance
of the MCP1801 at +25°C is typically ±0.4% with a
• Current Limit Protection
maximum of ±2%. Line regulation is ±0.01% typical at
• Shutdown Pin +25°C.
• High PSRR: 70 dB typical @ 10 kHz
The LDO output is stable with a minimum of 1 µF of
output capacitance. Ceramic, tantalum, or aluminum
Applications: electrolytic capacitors can all be used for input and
• Battery-powered Devices output. Overcurrent limit with current foldback provides
short-circuit protection. A shutdown (SHDN) function
• Battery-powered Alarm Circuits
allows the output to be enabled or disabled. When
• Smoke Detectors disabled, the MCP1801 draws only 0.01 µA of current
• CO2 Detectors (typical).
• Pagers and Cellular Phones The MCP1801 is available in a SOT-23-5 package.
• Wireless Communications Equipment
• Smart Battery Packs Package Types
• Low Quiescent Current Voltage Reference
• PDAs SOT-23-5
• Digital Cameras VOUT NC

• Microcontroller Power 5 4
• Solar-Powered Instruments
• Consumer Products
• Battery Powered Data Loggers

Related Literature: 1 2 3

• AN765, “Using Microchip’s Micropower LDOs”, VIN VSS SHDN

DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001

 2010 Microchip Technology Inc. DS22051D-page 1

MCP1801
Functional Block Diagram

MCP1801
+VIN
VIN VOUT

+VIN
SHDN Shutdown Voltage
Control -
Reference Current Limiter
+

Error Amplifier

GND

Typical Application Circuit

MCP1801
VIN
VOUT
1 VIN VOUT 5
3.3V @ 40 mA
COUT
1 µF Ceramic
2 GND

9V +
Battery
CIN 3 SHDN NC 4
1 µF
Ceramic

DS22051D-page 2  2010 Microchip Technology Inc.

 MCP1801
1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
CHARACTERISTICS
This is a stress rating only and functional operation of
the device at those or any other conditions above those
Absolute Maximum Ratings † indicated in the operational listings of this specification
Input Voltage ................................................................. +12V is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Output Current (Continuous) ..................... PD/(VIN-VOUT)mA
Output Current (Peak) ............................................... 500 mA
Output Voltage ............................... (VSS-0.3V) to (VIN+0.3V)
SHDN Voltage ..................................(VSS-0.3V) to (VIN+0.3V)
Continuous Power Dissipation:
SOT-23-5 .............................................................. 250 mW

ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 1.0V, Note 1, COUT = 1 µF (X7R),
CIN = 1 µF (X7R), VSHDN = VIN, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Input / Output Characteristics
Input Operating Voltage VIN 2.0 — 10.0 V Note 1
Input Quiescent Current Iq — 25 50 µA IL = 0 mA
Shutdown Current ISHDN — 0.01 0.10 µA SHDN = 0V
Maximum Output Current IOUT_mA 150 — — mA
Current Limiter ILIMIT — 300 — mA if VR  1.75V, then VIN = VR + 2.0V
Output Short Circuit Current IOUT_SC — 50 — mA if VR  1.75V, then VIN = VR + 2.0V
Output Voltage Regulation VOUT VR-2.0% VR VR+2.0% V VR  1.45V, IOUT = 30 mA, Note 2
VR-30 mV VR VR+30 mV VR  1.45V, IOUT = 30 mA
VOUT Temperature Coeffi- TCVOUT — 100 — ppm/°C IOUT = 30 mA, -40°C TA +85°C,
cient Note 3
Line Regulation VOUT/ -0.2 ±0.01 +0.2 %/V (VR + 1V) VIN 10V, Note 1
(VOUTXVIN) VR  1.75V, IOUT = 30 mA
VR  1.75V, IOUT = 10 mA
Load Regulation VOUT/VOUT — 15 50 mV IL = 1.0 mA to 100 mA, Note 4
Dropout Voltage, Note 5 VDROPOUT — 60 90 mV IL = 30 mA, 3.1V VR  6.0V
— 200 250 IL = 100 mA, 3.1V VR  6.0V
— 80 120 IL = 30 mA, 2.0V VR  3.1V
— 240 350 IL = 100 mA, 2.0V VR < 3.1V
— 2.07 - VR 2.10 - VR V IL = 30 mA, VR  2.0V
— 2.23 - VR 2.33 - VR IL = 100 mA, VR < 2.0V
Power Supply Ripple PSRR — 70 — dB f = 10 kHz, IL = 50 mA,
Rejection Ratio VINAC = 1V pk-pk, CIN = 0 µF,
if VR  1.5V, then VIN = 2.5V
Output Noise eN — 0.6 — µV/Hz IOUT=100 mA, f=1 kHz,
COUT=1 µF (X7R Ceramic),
VOUT=3.3V
Note 1: The minimum VIN must meet two conditions: VIN2.0V and VIN (VR + 1.0V).
2: VR is the nominal regulator output voltage. For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, or 5.0V.
The input voltage VIN = VR + 1.0V or ViIN = 2.0V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VR + 1.0V or 2.0V, whichever is greater.

 2010 Microchip Technology Inc. DS22051D-page 3

MCP1801
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 1.0V, Note 1, COUT = 1 µF (X7R),
CIN = 1 µF (X7R), VSHDN = VIN, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Shutdown Input
Logic High Input VSHDN-HIGH 1.6 — — V
Logic Low Input VSHDN-LOW — — 0.25 V
Note 1: The minimum VIN must meet two conditions: VIN2.0V and VIN (VR + 1.0V).
2: VR is the nominal regulator output voltage. For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, or 5.0V.
The input voltage VIN = VR + 1.0V or ViIN = 2.0V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VR + 1.0V or 2.0V, whichever is greater.

TEMPERATURE SPECIFICATIONS

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges
Operating Temperature Range TA -40 — +85 °C
Storage Temperature Range Tstg -55 — +125 °C
Thermal Package Resistance
Thermal Resistance, 5LD SOT-23 JA — 256 — °C/W EIA/JEDEC JESD51-7
JC — 81 — FR-4 0.063 4-Layer Board

DS22051D-page 4  2010 Microchip Technology Inc.

 MCP1801
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 3.3V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1.0V, SOT-23-5.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature.
The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

27.00 80
VOUT = 0.9V VOUT = 0.9V
26.00 IOUT = 0 µA 70 VIN = 2.0V
Quiescent Current (µA)

60

GND Current (µA)

+25°C
25.00 +90°C
50
24.00
40
23.00
30
22.00 20
0°C -45°C
21.00 10
20.00 0
2 4 6 8 10 0 30 60 90 120 150

Input Voltage (V) Load Current (mA)

FIGURE 2-1: Quiescent Current vs. Input FIGURE 2-4: Ground Current vs. Load
Voltage. Current.

30.00 80
VOUT = 3.3V
70
Quiescent Current (µA)

29.00 IOUT = 0 µA
GND Current (µA)

+90°C 60 VOUT = 6.0V

28.00
VIN = 7.0V
50
27.00
40
VOUT = 3.3V
26.00
30 VIN = 4.3V
-45°C
25.00 20
+25°C 0°C
24.00 10
4 5 6 7 8 9 10 0 25 50 75 100 125 150

Input Voltage (V) Load Current (mA)

FIGURE 2-2: Quiescent Current vs. Input FIGURE 2-5: Ground Current vs. Load
Voltage. Current.

30.00 30.00
VOUT = 6.0V VOUT = 6.0V IOUT = 0 mA
IOUT = 0 µA
Quiescent Current (µA)

VOUT = 3.3V VIN = 7.0V

Quiescent Current (µA)

29.00 28.00
VIN = 4.3V
+25°C +90°C
28.00 26.00

27.00 24.00
0°C
VOUT = 0.9V
26.00 22.00
-45°C VIN = 2.0V

25.00 20.00
7 7.5 8 8.5 9 9.5 10 -45 -22.5 0 22.5 45 67.5 90

Input Voltage (V) Junction Temperature (°C)

FIGURE 2-3: Quiescent Current vs. Input FIGURE 2-6: Quiescent Current vs.
Voltage. Junction Temperature.

 2010 Microchip Technology Inc. DS22051D-page 5

MCP1801
Note: Unless otherwise indicated: VR = 3.3V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1.0V, SOT-23-5.

0.920 0.920
VOUT = 0.9V VIN = 2.0V
ILOAD = 1 mA 0.915 VOUT = 0.9V
0.915
Output Voltage (V)

Output Voltage (V)

0°C 0.910
0.910
0.905
+25°C, -45°C
0.905 0.900
-45°C +25°C
0.895
0.900 0°C
0.890 +90°C
0.895
0.885
+90°C
0.890 0.880
2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150

Input Voltage (V) Load Current (mA)

FIGURE 2-7: Output Voltage vs. Input FIGURE 2-10: Output Voltage vs. Load
Voltage. Current.

3.34 3.34
VOUT = 3.3V VIN = 4.3V
0°C +25°C 3.33 +25°C 0°C
3.33 ILOAD = 1 mA VOUT = 3.3V
Output Voltage (V)

Output Voltage (V)

3.32 3.32
3.31
3.31 -45°C -45°C
3.30
3.30
3.29
3.29 +90°C
+90°C 3.28
3.28 3.27
3.27 3.26
4 5 6 7 8 9 10 0 25 50 75 100 125 150

Input Voltage (V) Load Current (mA)

FIGURE 2-8: Output Voltage vs. Input FIGURE 2-11: Output Voltage vs. Load
Voltage. Current.

6.06 6.06
0°C VOUT = 6.0V 0°C +25°C VIN = 7.0V
+25°C
ILOAD = 1 mA 6.04 VOUT = 6.0V
6.04
Output Voltage (V)
Output Voltage (V)

6.02
6.02
6.00 -45°C
6.00 -45°C
5.98
5.98
5.96 +90°C
5.96 +90°C 5.94
5.94 5.92
7 7.5 8 8.5 9 9.5 10 0 25 50 75 100 125 150

Input Voltage (V) Load Current (mA)

FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load
Voltage. Current.

DS22051D-page 6  2010 Microchip Technology Inc.

 MCP1801
Note: Unless otherwise indicated: VR = 3.3V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1.0V, SOT-23-5.

0.30
VOUT = 3.3V
0.25
Dropout Voltage (V)

0.20 +90°C

0.15 +25°C

0.10
-45°C
0.05
+0°C
0.00
0 25 50 75 100 125 150

Load Current (mA)

FIGURE 2-13: Dropout Voltage vs. Load FIGURE 2-16: Dynamic Line Response.
Current.

0.25 140
VOUT = 6.0V VOUT = 3.3V

Short Circuit Current (mA)

120 ROUT < 0.1Ω
0.20
Dropout Voltage (V)

100
+90°C
0.15 80
+25°C
60
0.10
+0°C 40
0.05 -45°C
20

0.00 0
0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10

Load Current (mA) Input Voltage (V)

FIGURE 2-14: Dropout Voltage vs. Load FIGURE 2-17: Short Circuit Current vs.
Current. Input Voltage.

-1.00
VIN = 10V VOUT = 0.9V
-1.10 VIN = 8V IOUT = 0.1 mA to 150 mA
Load Regulation (%)

VIN = 6V
-1.20
VIN = 4V
-1.30

-1.40
VIN = 2V
-1.50

-1.60
-45 -22.5 0 22.5 45 67.5 90

Temperature (°C)

FIGURE 2-15: Dynamic Line Response. FIGURE 2-18: Load Regulation vs.
Temperature.

 2010 Microchip Technology Inc. DS22051D-page 7

MCP1801
Note: Unless otherwise indicated: VR = 3.3V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1.0V, SOT-23-5.

0.00 0.020
VOUT = 3.3V VOUT = 3.3V
IOUT = 0.1 mA to 150 mA VIN = 4.3V to 10V
-0.10 0.015

Line Regulation (%/V)

150 mA
Load Regulation (%)

100 mA
-0.20 VIN = 8V 0.010 50 mA
VIN = 6V VIN = 10V 10 mA
-0.30 0.005

-0.40 0.000
VIN = 4.3V
-0.50 -0.005
1 mA
-0.60 -0.010
-45 -22.5 0 22.5 45 67.5 90 -45 -22.5 0 22.5 45 67.5 90

Temperature (°C) Temperature (°C)

FIGURE 2-19: Load Regulation vs. FIGURE 2-22: Line Regulation vs.
Temperature. Temperature.

0.10 0.020
VOUT = 6.0V 150 mA VOUT = 6.0V
IOUT = 0.1 mA to 150 mA 0.015 100 mA VIN = 7.0V to 10.0V

Line Regulation (%/V)

Load Regulation (%)

0.00
50 mA
VIN = 8V
0.010
-0.10 VIN = 9V
VIN = 10V 0.005
-0.20
VIN = 7V 0.000
-0.30
-0.005
1 mA 10 mA
-0.40 -0.010
-45 -22.5 0 22.5 45 67.5 90 -45 -22.5 0 22.5 45 67.5 90
Temperature (°C) Temperature (°C)

FIGURE 2-20: Load Regulation vs. FIGURE 2-23: Line Regulation vs.
Temperature. Temperature.

0.020 0
VIN = 2.0 to 10.0V VR = 3.3V
0.015 150 mA VOUT = 0.9V -10 VIN = 4.3V
Line Regulation (%/V)

100 mA -20 VINAC = 100 mV p-p

0.010 50 mA 10 mA -30
CIN = 0 μF
PSRR (dB)

IOUT = 100 µA
0.005 -40
-50
0.000
-60
-0.005 1 mA -70
-80
-0.010
-90
-45 -22.5 0 22.5 45 67.5 90
0.01 0.1 1 10 100 1000
Temperature (°C) Frequency (kHz)

FIGURE 2-21: Line Regulation vs. FIGURE 2-24: PSRR vs. Frequency.
Temperature.

DS22051D-page 8  2010 Microchip Technology Inc.

 MCP1801
Note: Unless otherwise indicated: VR = 3.3V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1.0V, SOT-23-5.

0
VR = 6.0V
-10 VIN = 7.0V
-20 VINAC = 100 mV p-p
-30 CIN = 0 μF
PSRR (dB)

IOUT = 100 µA
-40
-50
-60
-70
-80
-90
0.01 0.1 1 10 100 1000
Frequency (kHz)

FIGURE 2-25: PSRR vs. Frequency. FIGURE 2-28: Dynamic Load Response.

FIGURE 2-26: Power-Up Timing. FIGURE 2-29: Power-Up Timing From

SHDN.

10.000
Vout = 3.3V IOUT = 100 mA
Noise (µV/Hz)

1.000

0.100
Vout = 0.9V

0.010
0.01 0.1 1 10 100 1000
Frequency (KHz)

FIGURE 2-27: Dynamic Load Response. FIGURE 2-30: Output Noise

 2010 Microchip Technology Inc. DS22051D-page 9

MCP1801
NOTES:

DS22051D-page 10  2010 Microchip Technology Inc.

 MCP1801
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: MCP1801 PIN FUNCTION TABLE

Pin No.
Name Function
SOT-23-5
1 VIN Unregulated Supply Voltage
2 GND Ground Terminal
3 SHDN Shutdown Input
4 NC No Connection
5 VOUT Regulated Voltage Output

3.1 Unregulated Input Voltage (VIN) 3.3 Shutdown Input (SHDN)

Connect VIN to the input unregulated source voltage. The SHDN input is used to turn the LDO output voltage
Like all low dropout linear regulators, low source on and off. When the SHDN input is at a logic-high
impedance is necessary for the stable operation of the level, the LDO output voltage is enabled. When the
LDO. The amount of capacitance required to ensure SHDN input is pulled to a logic-low level, the LDO
low source impedance will depend on the proximity of output voltage is disabled and the LDO enters a low
the input source capacitors or battery type. For most quiescent current shutdown state where the typical
applications, 0.1 µF of capacitance will ensure stable quiescent current is 0.01 µA. The SHDN pin does not
operation of the LDO circuit. The type of capacitor used have an internal pull-up or pull-down resistor. The
can be ceramic, tantalum, or aluminum electrolytic. The SHDN pin must be connected to either VIN or GND to
low ESR characteristics of the ceramic will yield better prevent the device from becoming unstable.
noise and PSRR performance at high frequency.
3.4 Regulated Output Voltage (VOUT)
3.2 Ground Terminal (GND)
Connect VOUT to the positive side of the load and the
Regulator ground. Tie GND to the negative side of the positive terminal of the output capacitor. The positive
output and the negative side of the input capacitor. side of the output capacitor should be physically
Only the LDO bias current (25 µA typical) flows out of located as close to the LDO VOUT pin as is practical.
this pin; there is no high current. The LDO output The current flowing out of this pin is equal to the DC
regulation is referenced to this pin. Minimize voltage load current.
drops between this pin and the negative side of the
load.

 2010 Microchip Technology Inc. DS22051D-page 11

MCP1801
NOTES:

DS22051D-page 12  2010 Microchip Technology Inc.

 MCP1801
4.0 DETAILED DESCRIPTION

4.1 Output Regulation 4.4 Output Capacitor

A portion of the LDO output voltage is fed back to the The MCP1801 requires a minimum output capacitance
internal error amplifier and compared with the precision of 1 µF for output voltage stability. Ceramic capacitors
internal bandgap reference. The error amplifier output are recommended because of their size, cost, and
will adjust the amount of current that flows through the environmental robustness qualities.
P-Channel pass transistor, thus regulating the output Aluminum-electrolytic and tantalum capacitors can be
voltage to the desired value. Any changes in input used on the LDO output as well. The output capacitor
voltage or output current will cause the error amplifier should be located as close to the LDO output as is
to respond and adjust the output voltage to the target practical. Ceramic materials X7R and X5R have low
voltage (refer to Figure 4-1). temperature coefficients and are well within the
acceptable ESR range required. A typical 1 µF X7R
4.2 Overcurrent 0805 capacitor has an ESR of 50 milli-ohms.
The MCP1801 internal circuitry monitors the amount of Larger LDO output capacitors can be used with the
current flowing through the P-Channel pass transistor. MCP1801 to improve dynamic performance and power
In the event that the load current reaches the current supply ripple rejection performance. Aluminum-
limiter level of 300 mA (typical), the current limiter electrolytic capacitors are not recommended for low
circuit will operate and the output voltage will drop. As temperature applications of 25°C.
the output voltage drops, the internal current foldback
circuit will further reduce the output voltage causing the 4.5 Input Capacitor
output current to decrease. When the output is shorted,
a typical output current of 50 mA flows. Low input source impedance is necessary for the LDO
output to operate properly. When operating from
batteries, or in applications with long lead length
4.3 Shutdown
(> 10 inches) between the input source and the LDO,
The SHDN input is used to turn the LDO output voltage some input capacitance is recommended. A minimum
on and off. When the SHDN input is at a logic-high of 0.1 µF to 4.7 µF is recommended for most
level, the LDO output voltage is enabled. When the applications.
SHDN input is pulled to a logic-low level, the LDO For applications that have output step load
output voltage is disabled and the LDO enters a low requirements, the input capacitance of the LDO is very
quiescent current shutdown state where the typical important. The input capacitance provides the LDO
quiescent current is 0.01 µA. The SHDN pin does not with a good local low-impedance source to pull the
have an internal pull-up or pull-down resistor. transient currents from in order to respond quickly to
Therefore, the SHDN pin must be pulled either high or the output load step. For good step response
low to prevent the device from becoming unstable. The performance, the input capacitor should be of
internal device current will increase when the device is equivalent (or higher) value than the output capacitor.
operational and current flows through the pull-up or The capacitor should be placed as close to the input of
pull-down resistor to the SHDN pin internal logic. The the LDO as is practical. Larger input capacitors will also
SHDN pin internal logic is equivalent to an inverter help reduce any high-frequency noise on the input and
input. output of the LDO and reduce the effects of any
inductance that exists between the input source
voltage and the input capacitance of the LDO.

 2010 Microchip Technology Inc. DS22051D-page 13

MCP1801

MCP1801
+VIN
VIN VOUT

+VIN
SHDN Shutdown Voltage
Control -
Reference Current Limiter
+

Error Amplifier

GND

FIGURE 4-1: Block Diagram.

DS22051D-page 14  2010 Microchip Technology Inc.

 MCP1801
5.0 FUNCTIONAL DESCRIPTION 5.2 Output
The MCP1801 CMOS low dropout linear regulator is The maximum rated continuous output current for the
intended for applications that need the low current MCP1801 is 150 mA.
consumption while maintaining output voltage A minimum output capacitance of 1.0 µF is required for
regulation. The operating continuous load range of the small signal stability in applications that have up to
MCP1801 is from 0 mA to 150 mA. The input operating 150 mA output current capability. The capacitor type
voltage range is from 2.0V to 10.0V, making it capable can be ceramic, tantalum, or aluminum electrolytic.
of operating from three or more alkaline cells or single
and multiple Li-Ion cell batteries.

5.1 Input
The input of the MCP1801 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications a 0.1 µF
ceramic capacitor will be sufficient to ensure circuit
stability. Larger values can be used to improve circuit
AC performance.

 2010 Microchip Technology Inc. DS22051D-page 15

MCP1801
NOTES:

DS22051D-page 16  2010 Microchip Technology Inc.

 MCP1801
6.0 APPLICATION CIRCUITS AND resistance from junction to ambient (RJA). The thermal
resistance from junction to ambient for the SOT-23-5
ISSUES
pin package is estimated at 256°C/W.

6.1 Typical Application EQUATION 6-2:

The MCP1801 is most commonly used as a voltage T J  MAX  = P TOTAL  R JA + T AMAX
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered Where:
applications. TJ(MAX) = Maximum continuous junction
temperature
MCP1801
PTOTAL = Total device power dissipation
NC SHDN RJA = Thermal resistance from
junction to ambient
GND TAMAX = Maximum ambient temperature
VOUT
1.8V VIN
VOUT VIN 2.4V to 5.0V The maximum power dissipation capability for a
IOUT CIN
COUT package can be calculated given the junction-to-
50 mA 1 µF
1 µF Ceramic ambient thermal resistance and the maximum ambient
Ceramic temperature for the application. The following equation
can be used to determine the package maximum
FIGURE 6-1: Typical Application Circuit. internal power dissipation.
6.1.1 APPLICATION INPUT CONDITIONS
EQUATION 6-3:
Package Type = SOT-23-5  T J  MAX  – T A  MAX  
Input Voltage Range = 2.4V to 5.0V P D  MAX  = ---------------------------------------------------
R JA
VIN maximum = 5.0V
Where:
VOUT typical = 1.8V
PD(MAX) = Maximum device power
IOUT = 50 mA maximum
dissipation
TJ(MAX) = Maximum continuous junction
6.2 Power Calculations temperature
6.2.1 POWER DISSIPATION TA(MAX) = Maximum ambient temperature

The internal power dissipation of the MCP1801 is a RJA = Thermal resistance from
function of input voltage, output voltage, and output junction to ambient
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant EQUATION 6-4:
(25.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO. T J  RISE  = P D  MAX   R JA

Where:
EQUATION 6-1:
TJ(RISE) = Rise in device junction
P LDO =  VIN  MAX   – V OUT  MIN    I OUT  MAX   temperature over the ambient
temperature
Where:
PTOTAL = Maximum device power
PLDO = LDO Pass device internal power dissipation
dissipation RJA = Thermal resistance from
VIN(MAX) = Maximum input voltage junction to ambient
VOUT(MIN) = LDO minimum output voltage

The maximum continuous operating temperature

specified for the MCP1801 is +85°C. To estimate the
internal junction temperature of the MCP1801, the total
internal power dissipation is multiplied by the thermal

 2010 Microchip Technology Inc. DS22051D-page 17

MCP1801
EQUATION 6-5: Device Junction Temperature Rise
T J = T J  RISE  + T A The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
Where:
from junction to ambient for the application. The
TJ = Junction Temperature thermal resistance from junction to ambient (RJA) is
TJ(RISE) = Rise in device junction derived from an EIA/JEDEC standard for measuring
temperature over the ambient thermal resistance for small surface mount packages.
temperature The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
TA = Ambient temperature Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
6.3 Voltage Regulator thermal resistance for a particular application can vary
Internal power dissipation, junction temperature rise, depending on many factors, such as copper area and
junction temperature and maximum power dissipation thickness. Refer to AN792, “A Method to Determine
are calculated in the following example. The power How Much Power a SOT-23 Can Dissipate in an
dissipation, as a result of ground current, is small Application”, (DS00792), for more information
enough to be neglected. regarding this subject.

6.3.1 POWER DISSIPATION EXAMPLE TJ(RISE) = PTOTAL x RqJA

Package TJRISE = 161.8 milli-Watts x 256.0°C/Watt
Package Type: SOT-23-5 TJRISE = 41.42°C
Input Voltage
VIN = 2.4V to 5.0V
LDO Output Voltages and Currents
VOUT = 1.8V
IOUT = 50 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (5.0V - (0.98 x 1.8V)) x 50 mA
PLDO = 161.8 milli-Watts

DS22051D-page 18  2010 Microchip Technology Inc.

 MCP1801
Junction Temperature Estimate 6.5 Pulsed Load Applications
To estimate the internal junction temperature, the For some applications, there are pulsed load current
calculated temperature rise is added to the ambient or events that may exceed the specified 150 mA
offset temperature. For this example, the worst-case maximum specification of the MCP1801. The internal
junction temperature is estimated in the following table. current limit of the MCP1801 will prevent high peak
load demands from causing non-recoverable damage.
TJ = TJRISE + TA(MAX) The 150 mA rating is a maximum average continuous
TJ = 81.42°C rating. As long as the average current does not exceed
150 mA nor the maximum power dissipation of the
Maximum Package Power Dissipation at +25°C
packaged device, pulsed higher load currents can be
Ambient Temperature
applied to the MCP1801. The typical current limit for
SOT-23-5 (256°C/Watt = RJA) the MCP1801 is 300 mA (TA +25°C).
PD(MAX) = (85°C - 25°C) / 256°C/W
PD(MAX) = 234 milli-Watts

6.4 Voltage Reference

The MCP1801 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1801 LDO. The low cost, low quiescent
current, and small ceramic output capacitor are all
advantages when using the MCP1801 as a voltage
reference.

Ratio Metric Reference

MCP1801 PIC®
25 µA Bias Microcontroller
VIN
CIN VOUT VREF
1 µF COUT
GND 1 µF
ADO
AD1

Bridge Sensor

FIGURE 6-2: Using the MCP1801 as a

Voltage Reference.

 2010 Microchip Technology Inc. DS22051D-page 19

MCP1801
7.0 PACKAGING INFORMATION

7.1 Package Marking Information

5-Lead SOT-23 Example:

Standard Options for SOT-23

Extended Temp
XXNN Symbol Voltage * Symbol Voltage *
9XNN
9X8# 0.9 9XZ# 3.0
1 9XB# 1.2 9B2# 3.3 1
9XK# 1.8 9BM# 5.0
9XT# 2.5 9BZ# 6.0
* Custom output voltages available upon request.
Contact your local Microchip sales office for more
information.

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

DS22051D-page 20  2010 Microchip Technology Inc.

 MCP1801

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 2010 Microchip Technology Inc. DS22051D-page 21

MCP1801

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

DS22051D-page 22  2010 Microchip Technology Inc.

 MCP1801
APPENDIX A: REVISION HISTORY

Revision D (October 2010)

The following is the list of modifications:
1. Removed Note 1 from the Dropout Voltage
parameter in the Electrical Characteristics table.
1. Added Land Pattern package outline drawing
C04-2091A.

Revision C (January 2009)

The following is the list of modifications:
1. Added Shutdown Input information to the Elec-
trical Characteristics table.

Revision B (February 2008)

The following is the list of modifications:
1. Updated the Electrical Characteristics table.
2. Added Figure 2-30.

Revision A (June 2007)

• Original Release of this Document.

 2010 Microchip Technology Inc. DS22051D-page 23

MCP1801
NOTES:

DS22051D-page 24  2010 Microchip Technology Inc.

 MCP1801
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. X- XX X X X/ XX Examples:

a) MCP1801T-0902I/OT: Tape and Reel, 0.9V
Device Tape Output Feature Tolerance Temp. Package b) MCP1801T-1202I/OT: Tape and Reel, 1.2V
and Reel Voltage Code c) MCP1801T-1802I/OT: Tape and Reel, 1.8V
d) MCP1801T-2502I/OT: Tape and Reel, 2.5V
e) MCP1801T-3002I/OT: Tape and Reel, 3.0V
Device: MCP1801: 150 mA, Low Quiescent Current LDO f) MCP1801T-3302I/OT: Tape and Reel, 3.3V
g) MCP1801T-5002I/OT: Tape and Reel, 5.0V
h) MCP1801T-6002I/OT: Tape and Reel, 6.0V
Tape and Reel: T = Tape and Reel

Output Voltage *: 09 = 0.9V “Standard”

12 = 1.2V “Standard”
18 = 1.8V “Standard”
25 = 2.5V “Standard”
30 = 3.0V “Standard”
33 = 3.3V “Standard”
50 = 5.0V “Standard”
60 = 6.0V “Standard”
*Contact factory for other output voltage options.

Extra Feature Code: 0 = Fixed

Tolerance: 2 = 2.0% (Standard)

Temperature: I = -40C to +85C

Package Type: OT = Plastic Small Outline Transistor (SOT-23) 5-lead,

 2010 Microchip Technology Inc. DS22051D-page 25

MCP1801
NOTES:

DS22051D-page 26  2010 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience
The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
ensure that your application meets with your specifications.
PIC32 logo, rfPIC and UNI/O are registered trademarks of
MICROCHIP MAKES NO REPRESENTATIONS OR
Microchip Technology Incorporated in the U.S.A. and other
WARRANTIES OF ANY KIND WHETHER EXPRESS OR countries.
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
INCLUDING BUT NOT LIMITED TO ITS CONDITION, MXDEV, MXLAB, SEEVAL and The Embedded Control
QUALITY, PERFORMANCE, MERCHANTABILITY OR Solutions Company are registered trademarks of Microchip
FITNESS FOR PURPOSE. Microchip disclaims all liability Technology Incorporated in the U.S.A.
arising from this information and its use. Use of Microchip Analog-for-the-Digital Age, Application Maestro, CodeGuard,
devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
hold harmless Microchip from any and all damages, claims, Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
suits, or expenses resulting from such use. No licenses are logo, MPLIB, MPLINK, mTouch, Omniscient Code
conveyed, implicitly or otherwise, under any Microchip Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
intellectual property rights. PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.

ISBN: 978-1-60932-574-9

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2010 Microchip Technology Inc. DS22051D-page 27

 Worldwide Sales and Service
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DS22051D-page 28  2010 Microchip Technology Inc.