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Surface Mount Schottky Barrier Diode SOD-123: Features

The document provides specifications for the 1N5819W Schottky Barrier Diode, including features such as low power loss, low forward voltage drop, and high surge capability. It details mechanical data, absolute maximum ratings, and electrical characteristics at 25 °C. The diode is housed in a SOD-123 package and is Pb/RoHS free.

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Ibrahim Khwaira
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14 views1 page

Surface Mount Schottky Barrier Diode SOD-123: Features

The document provides specifications for the 1N5819W Schottky Barrier Diode, including features such as low power loss, low forward voltage drop, and high surge capability. It details mechanical data, absolute maximum ratings, and electrical characteristics at 25 °C. The diode is housed in a SOD-123 package and is Pb/RoHS free.

Uploaded by

Ibrahim Khwaira
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Certificate TH97/10561QM Certificate TW00/17276EM

1N5819W SURFACE MOUNT


SCHOTTKY BARRIER DIODE
FEATURES : SOD-123
* Low Power Loss, 2.7
* Low Forward Voltage Drop 2.6

0.6
0.5
* High Efficiency

1.65
1.55
* High Surge Capability
* High Current Capability
* Pb / RoHS Free

0.135
0.127
MECHANICAL DATA :

1.15
1.05
* Case: SOD-123, Plastic
* Terminals: Solderable per MIL-STD-202, Method 208
3.9
* Polarity: Cathode Band 37
* Weight: 0.01 grams (approx.)
Dimensions in millimeters
Absolute Maximum Ratings (Ta = 25 °C)
Parameter Symbol Value Unit
Maximum Peak Repetitive Reverse Voltage VRRM 40 V
Maximum Working Peak Reverse Voltage at I R = 1 mA VRWM 40 V
Maximum DC Blocking Voltage VR 40 V
Maximum RMS Reverse Voltage VR(RMS) 28 V
Maximum Average Forward Current IF 1 A
Non-Repetitive Peak Forward Surge Current 8.3ms single half
IFSM 25.0 A
sine-wave superimposed on rated load (JEDEC Method)
Power Dissipation Ptot 450 mW
Typical Thermal Resistance Junction to Ambient RӨJA 222 °C/W
Junction Temperature TJ 125 °C
Storage Temperature Range TSTG -55 to + 125 °C

Electrical Characteristics (Ta = 25 °C)

Parameter Symbol Test Condition Min. Typ. Max. Unit


Reverse Breakdown Voltage V(BR)R IR = 1.0 mA 40 - - V
Forward Voltage (Note 1) IF = 0.1 A - - 0.32
VF IF = 1.0 A - - 0.45 V
IF = 3.0 A - - 0.75
Reverse Leakage Current VR = 40 V - - 1 mA
(Note 1) VR = 40 V, Ta = 100 °C - - 10.0 mA
VR = 4 V - 10.0 50.0 μA
IRM
VR = 4 V, Ta = 100 °C - 1.0 2.0 mA
VR = 6 V - 15.0 75.0 μA
VR = 6 V, Ta = 100 °C - 1.5 3.0 mA
Typical Junction Capacitance CJ at VR = 4V, f = 1MHz - 110 - pF

Note : (1) Pulse Test: Pulse width ≤200 μs, Duty Cycle ≤2%.

Page 1 of 1 Rev. 00 : August 9, 2007

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