2STW4466

High power NPN epitaxial planar bipolar transistor

Features
■ High breakdown voltage VCEO = 80 V
■ Complementary to 2STW1693
■ Typical ft = 20 MHz

■ Fully characterized at 125 oC

Applications 3
2
■ Audio power amplifier 1
TO-247
Description
The device is a NPN transistor manufactured in
low voltage planar technology using base island Figure 1. Internal schematic diagram
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40 W to 70 W high fidelity
audio frequency amplifier output stage.

Table 1. Device summary

Order code Marking Package Packaging

2STW4466 2STW4466 TO-247 Tube

September 2008 Rev 2 1/9

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Electrical ratings 2STW4466

1 Electrical ratings

Table 2. Absolute maximum rating

Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 80 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 6 A
ICM Collector peak current (tP < 5 ms) 12 A
PTOT Total dissipation at Tc = 25 °C 60 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case ____max 2.08 °C/W

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2STW4466 Electrical characteristics

2 Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector cut-off current
ICBO VCB = 100 V 0.1 µA
(IE = 0)
Emitter cut-off current
IEBO VEB = 6 V 0.1 µA
(IC = 0)
Emitter-base breakdown
V(BR)EBO IE = 1 mA 6 V
voltage (IC = 0)
Collector-base breakdown
V(BR)CBO IC = 100 µA 100 V
voltage (IE = 0)
Collector-emitter breakdown
V(BR)CEO IC = 50 mA 80 V
voltage (IB = 0)

Collector-emitter saturation IC = 2 IB = 200 mA 0.6 V

VCE(sat) (1)
voltage IC = 6 A IB = 600 mA 1.5 V

VBE (1) Base-emitter voltage VCE = 4 V IC = 6 A 1.5 V

hFE DC current gain IC = 2 A V CE = 4 V 50 120
fT Transition frequency IC = 0.5 A V CE = 12 V 20 MHz
Collector-base capacitance
CCBO VCB = 10 V f = 1 MHz 50 pF
(IE = 0)
Resistive load
ton Turn-on time IC = 3 A V CC = 30 V 0.15 ns
tstg Storage time IB1 = -IB2 = 0.3 A 1.5 ns
tf Fall time 0.1 ns

Pulsed duration = 300 µs, duty cycle ≤ 1.5%

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Electrical characteristics 2STW4466

2.1 Electrical characteristics (curves)

Figure 2. DC current gain Figure 3. DC current gain

Figure 4. Collector-emitter saturation Figure 5. Base-emitter saturation

voltage voltage

Figure 6. Base emitter voltage Figure 7. Resistive load switching time

(on)

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2STW4466 Electrical characteristics

Figure 8. Resistive load switching time Figure 9. Emitter-base and collector-

(off) base capacitance

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Package mechanical data 2STW4466

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com

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2STW4466 Package mechanical data

TO-247 Mechanical data

Dim. mm.
Min. Typ Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50

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Revision history 2STW4466

4 Revision history

Table 5. Document revision history

Date Revision Changes

11-Oct-2007 1 First release

25-Sep-2008 2 Content reworked to improve readability, no technical changes.

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2STW4466

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