AP4525GEM

Pb Free Plating Product

Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement D2 N-CH BVDSS 40V

D2
▼ Low On-resistance D1
D1 RDS(ON) 28mΩ
▼ Fast Switching Performance ID 6A
G2
▼ RoHS Compliant G1
S2 P-CH BVDSS -40V
SO-8 S1
RDS(ON) 42mΩ
Description ID -5A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
D1 D2
ruggedized device design,low on-resistance and cost-
effectiveness. G1 G2

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage S1 S2
applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 40 -40 V
VGS Gate-Source Voltage ±16 ±16 V
3
ID@TA=25℃ Continuous Drain Current 6.0 -5.0 A
3
ID@TA=70℃ Continuous Drain Current 5.0 -4.0 A
1
IDM Pulsed Drain Current 30 -30 A
PD@TA=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W

Data and specifications subject to change without notice 200725064-1/7

AP4525GEM
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.04 - V/℃
RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=6A - - 28 mΩ
VGS=4.5V, ID=4A - - 32 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=6A - 6 - S
IDSS o
Drain-Source Leakage Current (Tj=25 C) VDS=40V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±30 uA
2
Qg Total Gate Charge ID=6A - 8 13 nC
Qgs Gate-Source Charge VDS=20V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
2
td(on) Turn-on Delay Time VDS=20V - 7 - ns
tr Rise Time ID=6A - 20 - ns
td(off) Turn-off Delay Time RG=3Ω,VGS=10V - 20 - ns
tf Fall Time RD=3.3Ω - 4 - ns
Ciss Input Capacitance VGS=0V - 580 930 pF
Coss Output Capacitance VDS=25V - 100 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF
Rg Gate Resistance f=1.0MHz - 2 3 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.1A, VGS=0V - - 1.8 V
2
trr Reverse Recovery Time IS=6A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC

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 AP4525GEM
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.02 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5A - - 42 mΩ
VGS=-4.5V, ID=-3A - - 60 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S
IDSS o
Drain-Source Leakage Current (Tj=25 C) VDS=-40V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±30 uA
2
Qg Total Gate Charge ID=-5A - 9 24 nC
Qgs Gate-Source Charge VDS=-20V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC
2
td(on) Turn-on Delay Time VDS=-20V - 8.5 - ns
tr Rise Time ID=-5A - 15 - ns
td(off) Turn-off Delay Time RG=3Ω,VGS=-10V - 27 - ns
tf Fall Time RD=4Ω - 25 - ns
Ciss Input Capacitance VGS=0V - 770 1230 pF
Coss Output Capacitance VDS=-20V - 165 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF
Rg Gate Resistance f=1.0MHz - 6 9 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.1A, VGS=0V - - -1.8 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 16 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.

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AP4525GEM
N-Channel
30 30

10V 10V
T A = 25 o C 7.0V T A = 150 o C 7.0V
5.0V 5.0V
4.5V 4.5V

ID , Drain Current (A)

ID , Drain Current (A)

20 20
V G =3.0V V G =3.0V

10 10

0 0
0 1 2 3 0 1 2 3 4

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

120

ID=4A ID=6A
T A =25 o C V G =10V
100 1.6
Normalized RDS(ON)
RDS(ON) (mΩ )

80

60 1.2

40

20 0.8
2 4 6 8 10 25 50 75 100 125 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.6

8
Normalized VGS(th) (V)

1.2

6
IS(A)

T j =150 o C T j =25 o C
4

0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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 AP4525GEM
N-Channel
f=1.0MHz
12 1000

I D =6A C iss
VGS , Gate to Source Voltage (V)

V DS =20V

C (pF)
100 C oss
C rss
4

0 10
0 5 10 15 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

10

100us 0.2
ID (A)

1ms 0.1
1 0.1

10ms 0.05
PDM
100ms t
0.02
T
T A =25 o C
0.1
1s 0.01
Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
DC Single Pulse

0.01 0.01
0.1 1 10 100 0.001 0.01 0.1 1 10 100

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

50

VG
40
V DS =5V
ID , Drain Current (A)

T j =25 o C T j =150 o C QG
30 4.5V

QGS QGD
20

10

Charge Q
0
0 2 4 6

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

5/7
AP4525GEM
P-Channel
30 30

-10V -10V
T A = 25 o C -7.0V
o
T A = 150 C -7.0V
-5.0V -5.0V
-4.5V -4.5V
-ID , Drain Current (A)

-ID , Drain Current (A)

20 20

V G = - 3.0V
V G = - 3.0V

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

120 1.6

I D = -5A
V G = -10V
I D = -3 A
1.4
T A = 25 o C
RDS(ON) (mΩ)

90
Normalized RDS(ON)

1.2

60

1.0

30 0.8
2 4 6 8 10 25 50 75 100 125 150

-V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

o

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.6

8
Normalized -VGS(th) (V)

1.2

T j =150 o C T j =25 o C
-IS(A)

0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

6/7
 AP4525GEM
P-Channel
f=1.0MHz
12 10000
-VGS , Gate to Source Voltage (V)

I D = -5 A
V DS = - 2 0 V
8 1000
C iss

C (pF)
C oss
4 100 C rss

0 10
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

10 100us
1ms 0.2
-ID (A)

0.1
1 10ms 0.1

0.05

100ms PDM

t
0.02 T
0.1
T c =25 o C 1s
0.01 Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + T a
DC Single Pulse Rthja=135 oC/W

0.01 0.01
0.1 1 10 100 0.001 0.01 0.1 1 10 100

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

30

o o
VG
V DS = -5V T j =25 C T j =150 C

QG
-ID , Drain Current (A)

20

-4.5V
QGS QGD
10

Charge Q
0
0 2 4 6

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

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