GD40PIX120C5S IGBT Module
STARPOWER
SEMICONDUCTOR IGBT
GD40PIX120C5S
1200V/40A PIM in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 1/13 preliminary
GD40PIX120C5S IGBT Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 65
IC A
@ TC=100oC 40
ICM Pulsed Collector Current tp=1ms 80 A
PD Maximum Power Dissipation @ Tj=175oC 232 W
Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 40 A
IFM Diode Maximum Forward Current tp=1ms 80 A
Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 40 A
Surge Forward Current tp=10ms @ Tj=25oC 450
IFSM A
@ Tj=150oC 370
I2t-value,tp=10ms @ Tj=25oC 1000
I2t A2s
@ Tj=150oC 685
IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 30
IC A
@ TC=100oC 15
ICM Pulsed Collector Current tp=1ms 30 A
PD Maximum Power Dissipation @ Tj=175oC 146 W
Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 10 A
IFM Diode Maximum Forward Current tp=1ms 20 A
Module
Symbol Description Value Unit
Maximum Junction Temperature(inverter,brake) 175 o
Tjmax C
Maximum Junction Temperature (rectifier) 150
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 2/13 preliminary
GD40PIX120C5S IGBT Module
IGBT-inverter Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=40A,VGE=15V,
1.90 2.35
Tj=25oC
Collector to Emitter IC=40A,VGE=15V,
VCE(sat) 2.15 V
Saturation Voltage Tj=125oC
IC=40A,VGE=15V,
2.20
Tj=150oC
Gate-Emitter Threshold IC=1.40mA,VCE=VGE,
VGE(th) 5.6 6.2 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 3.62 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.10 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.27 μC
td(on) Turn-On Delay Time 150 ns
tr Rise Time 28 ns
td(off) Turn-Off Delay Time 355 ns
VCC=600V,IC=40A,
tf Fall Time 86 ns
RG=40Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 3.67 mJ
Loss
Turn-Off Switching
Eoff 2.26 mJ
Loss
td(on) Turn-On Delay Time 160 ns
tr Rise Time 38 ns
td(off) Turn-Off Delay Time 495 ns
VCC=600V,IC=40A,
tf Fall Time 162 ns
RG=40Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 4.88 mJ
Loss
Turn-Off Switching
Eoff 3.42 mJ
Loss
td(on) Turn-On Delay Time 160 ns
tr Rise Time 38 ns
td(off) Turn-Off Delay Time 485 ns
VCC=600V,IC=40A,
tf Fall Time 183 ns
RG=40Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 5.44 mJ
Loss
Turn-Off Switching
Eoff 3.80 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 160 A
VCEM≤1200V
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 3/13 preliminary
GD40PIX120C5S IGBT Module
Diode-inverter Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=40A,VGE=0V,Tj=25oC 1.95 2.40
Diode Forward
VF IF=40A,VGE=0V,Tj=125oC 2.00 V
Voltage
IF=40A,VGE=0V,Tj=150oC 2.10
Qr Recovered Charge 3.5 μC
Peak Reverse VR=600V,IF=40A,
IRM 36 A
Recovery Current -di/dt=1200A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 1.13 mJ
Energy
Qr Recovered Charge 6.5 μC
Peak Reverse VR=600V,IF=40A,
IRM 40 A
Recovery Current -di/dt=1200A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 2.32 mJ
Energy
Qr Recovered Charge 7.3 μC
Peak Reverse VR=600V,IF=40A,
IRM 41 A
Recovery Current -di/dt=1200A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 2.64 mJ
Energy
Diode-rectifier Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=40A,VGE=0V,Tj=150oC 0.90 V
Voltage
IR Reverse Current Tj=150oC,VR=1600V 3.0 mA
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 4/13 preliminary
GD40PIX120C5S IGBT Module
IGBT-brake Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=15A,VGE=15V,
1.75 2.20
Tj=25oC
Collector to Emitter IC=15A,VGE=15V,
VCE(sat) 2.00 V
Saturation Voltage Tj=125oC
IC=15A,VGE=15V,
2.05
Tj=150oC
Gate-Emitter Threshold IC=0.60mA,VCE=VGE,
VGE(th) 5.6 6.2 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 1.55 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.04 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.12 μC
td(on) Turn-On Delay Time 47 ns
tr Rise Time 50 ns
td(off) Turn-Off Delay Time 191 ns
VCC=600V,IC=15A,
tf Fall Time 142 ns
RG=39Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25oC 1.11 mJ
Loss
Turn-Off Switching
Eoff 0.81 mJ
Loss
td(on) Turn-On Delay Time 47 ns
tr Rise Time 56 ns
td(off) Turn-Off Delay Time 269 ns
VCC=600V,IC=15A,
tf Fall Time 186 ns
RG=39Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 1.50 mJ
Loss
Turn-Off Switching
Eoff 1.18 mJ
Loss
td(on) Turn-On Delay Time 47 ns
tr Rise Time 56 ns
td(off) Turn-Off Delay Time 274 ns
VCC=600V,IC=15A,
tf Fall Time 210 ns
RG=39Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 1.67 mJ
Loss
Turn-Off Switching
Eoff 1.32 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 60 A
VCEM≤1200V
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 5/13 preliminary
GD40PIX120C5S IGBT Module
Diode-brake Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=10A,VGE=0V,Tj=25oC 1.85 2.30
Diode Forward
VF IF=10A,VGE=0V,Tj=125oC 1.90 V
Voltage
IF=10A,VGE=0V,Tj=150oC 1.95
Qr Recovered Charge 1.0 μC
Peak Reverse VR=600V,IF=10A,
IRM 14 A
Recovery Current -di/dt=490A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.24 mJ
Energy
Qr Recovered Charge 2.0 μC
Peak Reverse VR=600V,IF=10A,
IRM 12 A
Recovery Current -di/dt=490A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 0.51 mJ
Energy
Qr Recovered Charge 2.2 μC
Peak Reverse VR=600V,IF=10A,
IRM 9 A
Recovery Current -di/dt=490A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 0.58 mJ
Energy
NTC Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 %
Power
P25 20.0 mW
Dissipation
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]
R2=R25exp[B25/80(1/T2-
B25/80 B-value 3411 K
1/(298.15K))]
R2=R25exp[B25/100(1/T2-
B25/100 B-value 3433 K
1/(298.15K))]
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 6/13 preliminary
GD40PIX120C5S IGBT Module
Module Characteristics TC=25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 60 nH
RCC’+EE’ 4.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 3.00
Junction-to-Case (per IGBT-inverter) 0.647
Junction-to-Case (per Diode-inverter) 0.967
RthJC Junction-to-Case (per Diode-rectifier) 0.895 K/W
Junction-to-Case (per IGBT-brake) 1.028
Junction-to-Case (per Diode-brake) 1.850
Case-to-Heatsink (per IGBT-inverter) 0.307
Case-to-Heatsink (per Diode-inverter) 0.458
Case-to-Heatsink (per Diode-rectifier) 0.424
RthCH K/W
Case-to-Heatsink (per IGBT-brake) 0.487
Case-to-Heatsink (per Diode-brake) 0.877
Case-to-Heatsink (per Module) 0.020
M Mounting Torque, Screw:M5 3.0 6.0 N.m
G Weight of Module 200 g
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 7/13 preliminary
GD40PIX120C5S IGBT Module
80 80
70 VGE=15V 70 VCE=20V
60 60
50 50
IC [A]
IC [A]
40 40
30 30
20 20
Tj=25℃ Tj=25℃
10 Tj=125℃ 10 Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 14
VCE [V] VGE [V]
Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics
20 20
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ Eoff Tj=125℃
Eon Tj=150℃ Eon Tj=150℃
16
Eoff Tj=150℃ Eoff Tj=150℃
15
VCC=600V VCC=600V
12 RG=40Ω IC=40A
VGE=±15V
E [mJ]
E [mJ]
VGE=±15V
10
5
4
0 0
0 10 20 30 40 50 60 70 80 0 80 160 240 320 400
IC [A] RG [Ω]
Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 8/13 preliminary
GD40PIX120C5S IGBT Module
90 1
Module IGBT
80
70
60
ZthJC [K/W]
50
IC [A]
0.1
40
30
20 RG=40Ω i: 1 2 3 4
VGE=±15V ri[K/W]: 0.0388 0.2136 0.2069 0.1876
τi[s]: 0.01 0.02 0.05 0.1
10 Tj=150oC
0 0.01
0 200 400 600 800 1000 1200 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]
Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance
80 4
Tj=25℃ Erec Tj=125℃
Tj=125℃
70 3.5 Erec Tj=150℃
Tj=150℃
60 3
50 2.5
E [mJ]
IF [A]
40 2
30 1.5
20 1 VCC=600V
RG=40Ω
10 0.5 VGE=-15V
0 0
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60 70 80
VF [V] IF [A]
Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 9/13 preliminary
GD40PIX120C5S IGBT Module
3 10
Erec Tj=125℃
Erec Tj=150℃
2.5
Diode
2 1
ZthJC [K/W]
E [mJ]
1.5
1 0.1
VCC=600V i: 1 2 3 4
0.5 ri[K/W]: 0.0580 0.3192 0.3094 0.2804
IF=40A τi[s]: 0.01 0.02 0.05 0.1
VGE=-15V
0 0.01
0 80 160 240 320 400 0.001 0.01 0.1 1 10
RG [Ω] t [s]
Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance
80 30
Tj=25℃
70 VGE=15V
Tj=150℃ 25
60
20
50
IC [A]
IF [A]
40 15
30
10
20
5 Tj=25℃
10 Tj=125℃
Tj=150℃
0 0
0.5 0.7 0.9 1.1 1.3 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]
Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 10/13 preliminary
GD40PIX120C5S IGBT Module
20 100
Tj=25℃
Tj=125℃
Tj=150℃
15
10
R [kΩ]
IF [A]
10
1
5
0 0.1
0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150
VF [V] TC [oC]
Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 11/13 preliminary
GD40PIX120C5S IGBT Module
Circuit Schematic
Package Dimensions
Dimensions in Millimeters
A 2:1
20 19 18 17 16 15 14 13 12 11 10
21
9
22 8
A 23 7
24
1 2 3 4 5 6
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 12/13 preliminary
GD40PIX120C5S IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
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If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2020 STARPOWER Semiconductor Ltd. 7/16/2020 13/13 preliminary
