GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

12 January 2021 Product data sheet

1. General description
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a
normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and
low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2. Features and benefits

• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability

3. Applications
• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives

4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - - 650 V
ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 47.2 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 187 W
Tj junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 32 A; Tj = 25 °C; - 35 41 mΩ
resistance Fig. 11
Dynamic characteristics
QGD gate-drain charge ID = 32 A; VDS = 400 V; VGS = 10 V; - 6.6 - nC
QG(tot) total gate charge Tj = 25 °C; Fig. 13; Fig. 14 - 22 - nC
Source-drain diode
Qr recovered charge IS = 32 A; dIS/dt = -1000 A/µs; - 150 - nC
VGS = 0 V; VDS = 400 V; Fig. 20
Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate mb D

2 S source
3 D drain
mb S mounting base; connected
to source
G

S
1 2 3
TO-247 (SOT429) aaa-028116

6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
GAN041-650WSB TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm SOT429
pitch; 20.45 mm x 15.6 mm x 4.95 mm body

7. Marking
Table 4. Marking codes
Type number Marking code
GAN041-650WSB GAN041
650WSB

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V
VTDS transient drain to source pulsed; tp = 1 µs; δfactor = 0.01 - 725 V
voltage
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 187 W
ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 47.2 A
VGS = 10 V; Tmb = 100 °C; Fig. 2 - 33.4 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 240 A
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Tsld(M) peak soldering - 260 °C
temperature

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Product data sheet 12 January 2021 2 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Symbol Parameter Conditions Min Max Unit

Source-drain diode
IS source current Tmb = 25 °C; VGS = 0 V - 47.2 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 240 A

03aa16 aaa-027798
120 150
ID D = 10%
(A)
Pder
125
(%)

D = 20%
80 100

75
D = 50%

40 50
DC
25

0 0
0 50 100 150 200 25 50 75 100 125 150 175 200
Tmb (°C) Tmb (°C)

VGS ≥ 10 V; Pulse witdh ≤ 10 µs

Fig. 2. Continuous drain current as a function of
Fig. 1. Normalized total power dissipation as a mounting base temperature
function of mounting base temperature
aaa-032120
103
ID
(A) tp = 1 µs
102

10 µs
10
100 µs

1 ms
1

10 ms
10-1

10-2
10-1 1 10 102 103
VDS (V)

Tmb = 25 °C; IDM is a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 4 - - 0.8 K/W
junction to mounting
base
Rth(j-sp) thermal resistance from - - 40 K/W
junction to solder point

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Product data sheet 12 January 2021 3 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

aaa-032122
10
Zth(j-mb)
(K/W)

1
δ = 0.5

0.2

10-1
0.1
tp
P δ=
T
10-2
single shot
tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 1
tp (s)

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V
voltage ID = 1 mA; VDS=VGS; Tj = 175 °C; 2.2 - - V
Fig. 10
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 5.2 V
IDSS drain leakage current VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2.5 25 µA
VDS = 650 V; VGS = 0 V; Tj = 175 °C - 20 - µA
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 400 nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 400 nA
RDSon drain-source on-state VGS = 10 V; ID = 32 A; Tj = 25 °C; - 35 41 mΩ
resistance Fig. 11
VGS = 10 V; ID = 32 A; Tj = 175 °C; - 84 98 mΩ
Fig. 12
RG gate resistance f = 1 MHz 0.8 1.9 4.8 Ω
Dynamic characteristics
QG(tot) total gate charge ID = 32 A; VDS = 400 V; VGS = 10 V; - 22 - nC
QGS gate-source charge Tj = 25 °C; Fig. 13; Fig. 14 - 8.4 - nC
QGD gate-drain charge - 6.6 - nC
Ciss input capacitance VDS = 400 V; VGS = 0 V; f = 1 MHz; - 1500 - pF
Coss output capacitance Tj = 25 °C; Fig. 15 - 147 - pF
Crss reverse transfer - 5 - pF
capacitance
Co(er) effective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 220 - pF
capacitance, energy f = 1 MHz; Tj = 25 °C; Fig. 16
related
Co(tr) effective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 380 - pF
capacitance, time f = 1 MHz; Tj = 25 °C
related

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Product data sheet 12 January 2021 4 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Symbol Parameter Conditions Min Typ Max Unit

td(on) turn-on delay time VDS = 400 V; RL = 12.5 Ω; VGS = 12 V; - 14 - ns
tr rise time RG(ext) = 12 Ω; IS = 32 A; Fig. 17; Fig. 18 - 14 - ns
td(off) turn-off delay time - 36 - ns
tf fall time - 17 - ns
Qoss output charge VGS = 0 V; VDS = 400 V - 150 - nC
Source-drain diode
VSD source-drain voltage IS = 32 A; VGS = 0 V; Tj = 25 °C; Fig. 19 - 1.8 - V
IS = 16 A; VGS = 0 V; Tj = 25 °C; Fig. 19 - 1.3 - V
trr reverse recovery time IS = 32 A; dIS/dt = -1000 A/µs; - 59 - ns
Qr recovered charge VGS = 0 V; VDS = 400 V; Fig. 20 - 150 - nC

aaa-032128 aaa-032129
240 160
ID VGS = 12 V ID
(A) 8V (A) VGS = 12 V
200
120
160 8V

120 80
6V

80 6V

40
40
5V
5V

0 0
0 5 10 15 20 0 2 4 6 8 10
VDS (V) VDS (V)

Tj = 25 °C Tj = 175 °C
Fig. 5. Output characteristics; drain current as a Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values function of drain-source voltage; typical values
aaa-032123 aaa-032303
150 200
ID RDSon
(A) (mΩ)

120 160

90 120

60 80

30 40
175°C Tj = 25°C

0 0
0 2 4 6 8 10 0 2 4 6 8 10 12
VGS (V) VGS (V)

VDS = 10 V Tj = 25 °C; ID = 32 A
Fig. 7. Transfer characteristics; drain current as a Fig. 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values of gate-source voltage; typical values

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Product data sheet 12 January 2021 5 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

aaa-032132 aaa-029174
200 6
QOSS VGS(th)
(nC) (V)
5
150 Max

4 Typ

100 3
Min

2
50
1

0 0
0 100 200 300 400 500 600 700 -60 -30 0 30 60 90 120 150 180
VDS (V) Tj (°C)

ID = 1 mA ; VDS = VGS
Fig. 9. Typical QOSS
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
aaa-032124 aaa-032130
100 3
RDSon 6V 6.5 V a
(mΩ)
2.5
80

7V 2
60

1.5

40
1
VGS = 12 V

20
0.5

0 0
0 50 100 150 200 250 0 25 50 75 100 125 150 175 200
ID (A) Tj (°C)

Tj = 25 °C
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature

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Product data sheet 12 January 2021 6 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

aaa-032125
10
VGS
VDS
(V)

8
ID

6
VGS(pl)

4
VGS(th)

VGS
2
QGS2

QGS1
0
0 5 10 15 20 25 30 QGS QGD
QG (nC) QG(tot)
Tj = 25 °C; ID = 32 A 003aaa508

Fig. 13. Gate-source voltage as a function of gate Fig. 14. Gate charge waveform definitions
charge; typical values
aaa-032126 aaa-032131
104 50
C EOSS
(pF) Ciss (µJ)

40
103

Coss
30

102

20

10 Crss
10

1 0
1 10 102 103 0 100 200 300 400 500 600 700
VDS (V) VDS (V)

VGS = 0 V; f = 1 MHz
Fig. 16. Typical COSS Stored Energy
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
+V VDS
90 %
C

GND
RL

Drain
10 %
VGS
tr tf
Driver RG(ext) td(on) td(off)
Gate DUT
ton toff
aaa-032510

Source Fig. 18. Switching time waveform

GND
aaa-032509

Fig. 17. Switching time test circuit

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Product data sheet 12 January 2021 7 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

aaa-032127
240
IS Tj = 25°C
(A)
200 50°C
75°C

160 100°C
125°C
120 150°C

175°C
80

40

0
0 2 4 6 8 10
VSD (V)

VGS = 0 V
Fig. 19. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
I, V

dlS/dt

IS trr

t
0.25 IRM
Qr
IRM
A VRRM
DUT -
VSD

aaa-029277

Fig. 20. Diode reverse recovery test circuit and waveform

11. Application information

A Ferrite bead must be fitted in series with the gate of the GaN FET and should be located as
close as possible to the gate pin, (see figure below). Keeping the gate-source loop as compact
as possible minimizes the gate loop inductance. The Ferrite bead damps the resonant circuit
made up of the gate source loop inductance and the GaN FET input capacitance, thus providing
fast switching stability. It is recommended that the impedance of the ferrite bead should be
200 Ω — 270 Ω @ 100 MHz, (recommended p/n BLM18AG221SN1D).

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Product data sheet 12 January 2021 8 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

DC bus VBUS

driver Q2 RCDCL
RG FB1 (place as close as
possible to drain pin)

VS Vo

driver Q1
RG FB1
RSN
RCSN
CSN

aaa-030816

Fig. 21. Ferrite bead and RC snubber

A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily
achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any
resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN
FET and can lead to instability. For very high current, an RC snubber is recommended for the
switching node. This will increase switching loss, so this is only recommended at high power levels
where the losses are a very small percentage of the total power.

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Product data sheet 12 January 2021 9 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

12. Package outline

Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429

E A E1

E2/2 A2 D2

Q S
E2
ØP

D1
D
ØP1

1 2 3

L1
A1

b2 (2x)

L b4

e b c
(2x) (3x)

0 20 mm
scale

øP øP1 Q S

3.658 7.315 5.740 6.299

3.556 7.061 5.486 6.045

Dimensions (mm are the original dimensions)

Unit A A1 A2 b b2 b4 c D D1 D2 E E1 E2 E2/2 e L L1

max 5.156 2.507 2.108 1.397 2.387 3.429 0.889 21.082 17.441 1.321 16.027 14.148 5.225 2.613 20.320 4.445
mm nom 5.436
min 4.902 2.253 1.854 0.991 1.651 2.591 0.381 20.828 17.187 1.067 15.773 13.894 4.318 2.159 20.066 3.937
sot429_po

Outline References European

Issue date
version IEC JEDEC JEITA projection
19-08-19
SOT429 TO-247 19-08-20

Fig. 22. Package outline TO-247 (SOT429)

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Product data sheet 12 January 2021 10 / 12

Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
injury, death or severe property or environmental damage. Nexperia and its

13. Legal information suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
Data sheet status product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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data sheet the objective specification for without further testing or modification.
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and products using Nexperia products, and Nexperia accepts no liability for
Preliminary [short] Qualification This document contains data from
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data sheet the preliminary specification.
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Product [short] Production This document contains the product and fit for the customer’s applications and products planned, as well as
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[1] Please consult the most recently issued document before initiating or
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[2] The term 'short data sheet' is explained in section "Definitions". or problem which is based on any weakness or default in the customer’s
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Draft — The document is a draft version only. The content is still under the Absolute Maximum Ratings System of IEC 60134) will cause permanent
internal review and subject to formal approval, which may result in damage to the device. Limiting values are stress ratings only and (proper)
modifications or additions. Nexperia does not give any representations or operation of the device at these or any other conditions above those
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with the same product type number(s) and title. A short data sheet is
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Nexperia GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Application information..............................................8
12. Package outline........................................................ 10
13. Legal information......................................................11

© Nexperia B.V. 2021. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 January 2021

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Product data sheet 12 January 2021 12 / 12