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2SC4445

The document provides a product specification for the 2SC4445 Silicon NPN Power Transistor, highlighting its features such as high voltage and high-speed switching capabilities. It includes details on maximum ratings, characteristics, and pin configuration, making it suitable for switching regulators and general-purpose applications. The document also outlines key electrical parameters and performance metrics for the transistor.

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Majid Rakhshi
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13 views4 pages

2SC4445

The document provides a product specification for the 2SC4445 Silicon NPN Power Transistor, highlighting its features such as high voltage and high-speed switching capabilities. It includes details on maximum ratings, characteristics, and pin configuration, making it suitable for switching regulators and general-purpose applications. The document also outlines key electrical parameters and performance metrics for the transistor.

Uploaded by

Majid Rakhshi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4445

DESCRIPTION
·With TO-3PML package
·High voltage.
·High speed switching

APPLICATIONS
·For switching regulator and general
purpose applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Aabsolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 3 A

ICM Collector current-peak 6 A

IB Base current 1.5 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4445

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=0.7A;IB=0.14A 0.5 V

VBEsat Base-emitter saturation voltage IC=0.7A;IB=0.14A 1.2 V

ICBO Collector cut-off current VCB=800V; IE=0 100 µA

IEBO Emitter cut-off current VEB=7V; IC=0 100 µA

hFE DC current gain IC=0.7A ; VCE=4V 10 30

fT Transition frequency IE=-0.3A ; VCE=12V 15 MHz

COB Output capacitance VCB=10V;f=1MHz 50 pF

Switching times

ton Turn-on time 0.7 µs


IC=0.7A; RL=357A
tstg Storage time IB1=0.1A; IB2=-0.35A 4.0 µs
VCC=250V

tf Fall time 0.7 µs

2
SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4445

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4445

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