MOSFET THRESHOLD VOLTAGE AND
CURRENT EQUATION
Er.Somesh Kumar Malhotra
Assistant Professor,ECE Department.UIET
MOSFET THRESHOLD VOLTAGE
Threshold voltage (Vt) of a MOSFET is defined as the gate voltage with
respect to the source terminal at which the inversion layer is formed
underneath the gate oxide layer.
When a large gate voltage is applied, the minority carriers are attracted
towards the gate oxide surface and they are accumulated below the gate
oxide. Creation of this inversion layer is called inversion.
Depending on the carrier concentration of the inversion layer, inversion is
classified into two types:
⚫ strong inversion and
⚫ weak inversion.
In strong inversion, the p-type substrate is completely inverted into an
n-type material for nMOS transistors whereas, for the pMOS transistors, the
n-type substrate is completely inverted into a p-type material.
In case of weak inversion, the inversion happens partially.
MOSFET THRESHOLD VOLTAGE
MOSFET THRESHOLD VOLTAGE
MOSFET THRESHOLD VOLTAGE
MOSFET THRESHOLD VOLTAGE
MOSFET THRESHOLD VOLTAGE
EXAMPLE1
EXAMPLE1
MOSFET CURRENT EQUATION
Figure below shows an nMOS transistor with terminal voltages. The source
and bulk terminals are connected to the ground.
The voltage VDS is applied at the drain terminal and VGS is applied at the
gate terminal.
Let us assume that VGS > Vt so that the channel is formed underneath the
gate oxide layer.
Because of voltage difference between the drain and source, the current ID
flows from drain to source.
Let us derive an expression for the drain current as a function of VGS and
VDS.
We assume that the channel length L is extended along y-axis and the
channel width W is extended along x-axis.
The simplest model for the current in MOS transistor is the charge sheet
model.In this model, the inversion layer charge per unit area is given by
MOSFET CURRENT EQUATION
MOSFET CURRENT EQUATION
MOSFET CURRENT EQUATION
MOSFET CURRENT EQUATION
The MOSFET simply acts as a voltage-dependent linear resistor.
The channel resistance is increased as the channel length is increased, and
decreased as the channel width is increased.
Under this condition, the nMOS transistor is said to be operating in linear
region.
MOSFET CURRENT EQUATION
Hence, the inversion layer just begins to disappear at the drain end.
Under this condition the channel is pinched off.
The drain current does not increase; rather it remains constant.
This nMOS transistor operates in saturation region and the expression for
drain current as in Eqn (2.20) does not hold. Substituting VDS = (VGS – Vt)
in Eqn (2.26), we get
MOSFET CURRENT EQUATION
MOSFET CURRENT EQUATION
TRANSCONDUCTANCE, OUTPUT CONDUCTANCE,AND
FIGURE OF MERIT OF MOS TRANSISTOR
TRANSCONDUCTANCE, OUTPUT CONDUCTANCE,AND
FIGURE OF MERIT OF MOS TRANSISTOR
TRANSCONDUCTANCE, OUTPUT CONDUCTANCE,AND
FIGURE OF MERIT OF MOS TRANSISTOR
As shown in Eqn (2.41), the ratio of transconductance and the gate
τ
capacitance is proportional to the transit time of the electron ( n) in
traversing the channel length L and has a dimension of (1/sec).
Hence, this parameter gives an indication of the frequency response of the
MOS transistor, and is known as figure-of-merit (FOM) of the MOS
transistor.
Thus, FOM of an MOS transistor is expressed as
There is another definition of FOM of an MOS transistor. The product of the
gate charge (QG) and the channel resistance at ON condition of the
MOSFET is also known as FOM, and is given by
The gate charge is expressed as the total amount of charge consumed by the
gate capacitances.
V-I CHARACTERSITICS
V-I CHARACTERSITICS
EXAMPLE2
EXAMPLE3
EXAMPLE3
EXAMPLE3
