Class : XIIth Subject : PHYSICS
Date : Solutions DPP No. : 9
Topic :- SEMICONDUCTOR ELECTRONICS: MATERIALS,DEVIES AND SIMPLE CIRCUITS
1 (c)
The emission current 𝑖 = 𝐴𝑇2𝑆𝑒―𝜙/𝑘𝑇
For the two surfaces 𝐴1 = 𝐴2, 𝑆1 = 𝑆2, 𝑇1 = 800 𝐾,
𝑇2 = 1600 𝐾, 𝜙1/𝑇1 = 𝜙2/𝑇2
𝑖2
Therefore, 𝑖1 = ( )2 = (2)2 = 4⇒𝑖2 = 4𝑖1 = 4 𝑚𝐴
𝑇2
𝑇1
2 (b)
Depletion layer is more in less doped side
3 (d)
𝜎 = 𝑛𝑒(𝜇𝑒 + 𝜇ℎ) = 2 × 1019 × 1.6 × 10―19(0.36 + 0.14)
= 1.6 (Ω ― 𝑚)―1
𝑙 𝑙 0.5 × 10―3 25
𝑅=𝜌 = = = Ω
𝐴 𝜎𝐴 1.6 × 10―4 8
𝑉 2 16
∴𝑖= = = 𝐴 = 0.64 𝐴
𝑅 25/8 25
4 (d)
The output 𝑌 is
𝑌 = (𝐴 + 𝐵) ∙ 𝐶
The truth table of the given circuit is as shown in the table
𝐴 𝐵 𝐶 𝐴 + 𝐵 𝑌 = (𝐴 + 𝐵).𝐶
0 0 0 1 0
0 0 1 1 1
0 1 0 0 0
0 1 1 0 0
1 0 0 0 0
1 0 1 0 0
1 1 0 0 0
1 1 1 0 0
PRERNA EDUCATION https://prernaeducation.co.in 011-41659551 | 9312712114
5 (b)
In circuit the upper diode junction is forward biased and the lower diode junction is
reverse biased. Thus there will be no conduction across lower diode junction. Now the
total resistance of circuit = 100 + 150 + 50 = 300Ω
6
Current in 100Ω = 300 = 0.02 A.
6 (d)
Among the given materials copper is the best conductor of electricity
7 (d)
Voltage available across load resistance
𝑅 = 20 ― 5 = 15 V
Resistance of load,
R
10 mA
20 V
5V
15
𝑅= = 1.5 × 103
10 × 10―3
= 1.5 kΩ
8 (c)
When a light (wavelength sufficient to break the covalent bond) falls on the junction, new
hole electron pairs are created. No. of produced electron hole pairs depend upon no. of
photons. So photo 𝑒.𝑚.𝑓. or current is proportional to intensity of light
9 (a)
Let 𝐼𝑒 be the emitter current.
90
∴ 100
× 𝐼𝑒 = 𝐼𝑐
100 𝐼𝑐 10
⇒ 𝐼𝑒 = 90
= 9
𝐼𝑐
𝐼𝑐 9
∴𝛼= = = 0.9
𝐼𝑒 10
And
𝐼𝑐 𝐼𝑐 1 1 9
𝛽= = = = = =9
𝐼𝑒 𝐼𝑒 ― 𝐼 𝑐 𝐼𝑒 10
―1 1
―1
𝐼𝑐 9
10 (d)
5 𝑣𝑜𝑙𝑡 is low signal (0) and 10 𝑣𝑜𝑙𝑡 is high signal (1) and taking 5 𝜇-s as 1 unit, in a
negative logic, low signal (0) gives high output (1) and high signal (1) gives low output (0).
The output is therefore 1010010111
11 (b)
It is used to convert 𝑎𝑐 into 𝑑𝑐 (rectifier)
12 (b)
In the given circuit diode 𝐷1 is reverse biased while 𝐷2 is forward biased, so the ircuit can
be redrawn as
PRERNA EDUCATION https://prernaeducation.co.in 011-41659551 | 9312712114
4
D1 D2
12 V
3 2
[ ∵ For ideal diodes, reverse biased means open and forward biased means short]
Apply KVL to get current flowing through the circuit.
― 12 + 4𝑖 + 2𝑖 = 0
12
⇒ = =2𝐴
6
14 (c)
Here 𝑝 ― 𝑛 junction is forward biased. If 𝑝 ― 𝑛 junction ideal, its resistance is zero. The
effective resistance across 𝐴 and 𝐵
10 × 10
= = 5kΩ.
10 + 10
𝑉 30 2
Current in the circuit 𝐼 = 𝑅 = 15 × 103 = 103 A
2
Current in arm 𝐴𝐵 = 𝐼 = 103
2
Potential difference across 𝐴 and 𝐵 = 103 × 5 × 103 = 10 V.
15 (b)
Due to forward bias at the emitter-base junction, the majority charge carrier electrons of
emitter get repelled from the negative terminal and move towards base. Some of these
electrons combine with the majority charge carrier holes present in the base and most of
the electrons reach the collector, crossing the collector-base junction. This implies that
collector current is always less than the emitter current due to the reason (b).
16 (a)
In 𝑃-type semi conductor, holes are majority charge carriers
17 (d)
n-p-n transistor is formed by combining two 𝑛-types crystals between which a thin 𝑝-type
crystal is there. Electrons are charge carriers within the n-p-n transistor whereas holes are
charge carriers within the p-n-p transistor. Since, electrons move more easily than holes,
hence n-p-n transistors are preferred compared to p-n-p.
18 (d)
At logic gate I, the Boolean expression is 𝐵 ∙ 𝐶 = 𝑌′
At logic gate II, the Boolean expression is 𝐴 + (𝐵 ∙ 𝐶) = 𝑌′′
At logic gate III, the Boolean expression is 𝐴 + (𝐵 ∙ 𝐶) = 𝑌
19 (c)
In circuit 𝐴, both (𝑝 ― 𝑛) junction diode act as forward biased. Hence, current flows in
circuit 𝐴,
Total resistance 𝑅 is given by
1 1 1 1 2
= + ⇒ = ⇒𝑅 = 2Ω
𝑅 4 4 𝑅 4
According to Ohm’s law
𝑉 + 𝐼𝐴𝑅 ⇒8 = 𝐼𝐴 × 2⇒𝐼𝐴 = 4 𝐴
PRERNA EDUCATION https://prernaeducation.co.in 011-41659551 | 9312712114
In circuit 𝐵, lower 𝑃-𝑁 junction diode is reverse biased. Hence, no current will flow but
upper diode is forward biased, so current can flow through it
𝑉 = 𝐼𝐵𝑅⇒8 = 𝐼𝐵 × 4⇒𝐼𝐵 = 2 𝐴
20 (d)
For tetragonal, cubic and orthorhombic system 𝛼 = 𝛽 = 𝛾 = 90°
PRERNA EDUCATION https://prernaeducation.co.in 011-41659551 | 9312712114
ANSWER-KEY
Q. 1 2 3 4 5 6 7 8 9 10
A. C B D D B D D C A D
Q. 11 12 13 14 15 16 17 18 19 20
A. B B D C B A D D C D
PRERNA EDUCATION https://prernaeducation.co.in 011-41659551 | 9312712114