1200V XPTTM IGBTs IXYK120N120C3 VCES = 1200V

GenX3TM IXYX120N120C3 IC110 = 120A

VCE(sat)  3.20V
tfi(typ) = 96ns
High-Speed IGBTs
for 20-50 kHz Switching

TO-264 (IXYK)

Symbol Test Conditions Maximum Ratings G

C
VCES TJ = 25°C to 175°C 1200 V E
Tab
VCGR TJ = 25°C to 175°C, RGE = 1M 1200 V
VGES Continuous ±20 V PLUS247 (IXYX)
VGEM Transient ±30 V
IC25 TC= 25°C (Chip Capability) 240 A
ILRMS Terminal Current Limit 160 A
IC110 TC= 110°C 120 A
G
ICM TC = 25°C, 1ms 700 A G C
E Tab
IA TC = 25°C 60 A
EAS TC = 25°C 2 J
G = Gate E = Emitter
SSOA VGE = 15V, TVJ = 150°C, RG = 1 ICM = 240 A C = Collector Tab = Collector
(RBSOA) Clamped Inductive Load VCE  VCES
PC TC = 25°C 1500 W
Features
TJ -55 ... +175 °C
TJM 175 °C 
Optimized for Low Switching Losses
Tstg -55 ... +175 °C 
Square RBSOA

International Standard Packages
TL Maximum Lead Temperature for Soldering 300 °C 
Positive Thermal Coefficient of
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C Vce(sat)
Md Mounting Torque (TO-264) 1.13/10 Nm/lb.in

Avalanche Rated

High Current Handling Capability
FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g Advantages


High Power Density
Symbol Test Conditions Characteristic Values

Low Gate Drive Requirement
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1200 V Applications
VGE(th) IC = 500A, VCE = VGE 3.0 5.0 V 
High Frequency Power Inverters
ICES VCE = VCES, VGE = 0V 25 A 
UPS
TJ = 150C 1.5 mA

Motor Drives

SMPS
IGES VCE = 0V, VGE = 20V 100 nA 
PFC Circuits
VCE(sat) IC = IC110, VGE = 15V, Note 1 2.55 3.20 V

Battery Chargers

Welding Machines
TJ = 150C 3.40 V 
Lamp Ballasts

© 2013 IXYS CORPORATION, All Rights Reserved DS100451B(9/13)

 IXYK120N120C3
IXYX120N120C3
Symbol Test Conditions Characteristic Values
TO-264 Outline
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 40 68 S
Cies 9850 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 580 pF
Cres 218 pF
Qg(on) 412 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 73 nC
Qgc 180 nC
td(on) 35 ns
tri Inductive load, TJ = 25°C 77 ns
Eon IC = 100A, VGE = 15V 6.75 mJ
td(off) VCE = 0.5 • VCES, RG = 1 176 ns Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
tfi Note 2 96 ns
Eoff 5.10 mJ
td(on) 33 ns
tri Inductive load, TJ = 150°C 72 ns
Eon IC = 100A, VGE = 15V 10.30 mJ
td(off) VCE = 0.5 • VCES, RG = 1 226 ns
tfi Note 2 120 ns
Eoff 7.20 mJ
RthJC 0.10 °C/W
RthCS 0.15 °C/W
PLUS247TM Outline

Notes:
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

Terminals: 1 - Gate
2 - Collector
3 - Emitter

Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXYK120N120C3
IXYX120N120C3

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

240
VGE = 15V VGE = 15V
300
13V 12V 10V
200 12V 11V
11V
250
10V 9V
160
9V
I C - Amperes

200

I C - Amperes
120 8V
150
8V

80
100
7V
7V
40 50
6V 6V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts VCE - Volts

Fig. 4. Dependence of VCE(sat) on

Fig. 3. Output Characteristics @ TJ = 150ºC Junction Temperature
240 2.2
VGE = 15V
VGE = 15V
13V 2.0
200 12V
11V 1.8
9V
10V I C = 240A
VCE(sat) - Normalized

160 1.6
I C - Amperes

1.4
8V
120
1.2 I C = 120A

80 7V 1.0

0.8
40 I C = 60A
6V
0.6

0 5V 0.4
0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 175
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage Fig. 6. Input Admittance
8 280

TJ = 25ºC
7 240

6 200
I C - Amperes
V CE - Volts

5 160
I C = 240A

4 120

TJ = 150ºC
3 120A 80 25ºC
- 40ºC
2 40
60A

1 0
6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts VGE - Volts

© 2013 IXYS CORPORATION, All Rights Reserved

 IXYK120N120C3
IXYX120N120C3

Fig. 7. Transconductance Fig. 8. Gate Charge

140 16

TJ = - 40ºC VCE = 600V

14
120
I C = 120A

12 I G = 10mA
100
25ºC
g f s - Siemens

10

V GE - Volts
80
150ºC
8
60
6

40
4

20 2

0 0
0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450
I C - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

100,000 280

f = 1 MHz
240
Capacitance - PicoFarads

C ies 200
10,000
I C - Amperes

160

120

1,000 C oes
80
TJ = 150ºC

40 RG = 1Ω
dv / dt < 10V / ns
C res
100 Fig. 11. Maximum Transient0 Thermal Impedance
1 0 5 10 15 20 25 30 35 40 100 300 500 700 900 1100 1300
VCE - Volts VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

aaaaa
0.2

0.1
Z(th)JC - ºC / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXYK120N120C3
IXYX120N120C3
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance Collector Current
10 18 8 14

Eoff Eon - --- Eoff Eon ----

9 16 7 12
TJ = 150ºC , VGE = 15V RG = 1ΩVGE = 15V
VCE = 600V I C = 100A
8 14 VCE = 600V
6 10
E off - MilliJoules

E off - MilliJoules
E on - MilliJoules

E on - MilliJoules
7 12
5 TJ = 150ºC 8
6 10
4 6
5 8

3 4
4 6
I C = 50A TJ = 25ºC
3 4 2 2

2 2 1 0
1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95 100
RG - Ohms I C - Amperes

Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.
Junction Temperature Gate Resistance
8 14 200 800

Eoff Eon ---- tfi td(off) - - - -

7 12 180 TJ = 150ºC, VGE = 15V 700
RG = 1ΩVGE = 15V
VCE = 600V I C = 100A VCE = 600V
6 10 160 600

t d(off) - Nanoseconds
t f i - Nanoseconds
Eon - MilliJoules
Eoff - MilliJoules

5 8 140 I C = 50A 500

120 I C = 100A 400

4 6

3 4 100 300
I C = 50A

2 2 80 200

1 0 60 100
25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10
TJ - Degrees Centigrade RG - Ohms

Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current Junction Temperature
200 320 160 320

180 tfi td(off) - - - - 300 150 tfi td(off) - - - - 300

RG = 1Ω, VGE = 15V RG = 1Ω, VGE = 15V
160 VCE = 600V 280 140 VCE = 600V 280
TJ = 150ºC I C = 50A
t d(off) - Nanoseconds
t f i - Nanoseconds

t f i - Nanoseconds

t d(off) - Nanoseconds

140 260 130 260

120 240 120 240

100 220 110 220

I C = 100A
80 200 100 200

TJ = 25ºC
60 180 90 180

40 160 80 160

20 140 70 140
50 55 60 65 70 75 80 85 90 95 100 25 50 75 100 125 150
I C - Amperes TJ - Degrees Centigrade

© 2013 IXYS CORPORATION, All Rights Reserved

 IXYK120N120C3
IXYX120N120C3
Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance Collector Current
160 84 90 37

tri td(on) - - - - tri td(on) - - - -

140 76 80 36
TJ = 150ºC, VGE = 15V RG = 1Ω, VGE = 15V

120 VCE = 600V 68 VCE = 600V

70 35

t d(on) - Nanoseconds

t d(on) - Nanoseconds
t r i - Nanoseconds
t r i - Nanoseconds

100 60
60 TJ = 25ºC 34
80 52
I C = 100A 50 33
TJ = 150ºC
60 44

40 32
40 36
I C = 50A
20 28 30 31

0 20 20 30
1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95 100
RG - Ohms I C - Amperes

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature Fig. 21. Maximum Peak Load Current vs. Frequency
120 40 120

tri td(on) - - - - 110

100 RG = 1Ω, VGE = 15V 38 100

VCE = 600V 90
I C = 100A
t d(on) - Nanoseconds
t r i - Nanoseconds

80 36 80
I C - Amperes

70

60 34 60
Triangular Wave
50 TJ = 150ºC

40 32 TC = 75ºC
40
I C = 50A VCE = 600V
30
VGE = 15V
20 30 20 Square Wave
RG = 1Ω
10 D = 0.5

0 28 0
25 50 75 100 125 150 10 100 1,000
TJ - Degrees Centigrade fmax - KiloHertzs

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: IXY_120N120C3(9P-C91) 9-09-13