BSP603S2L

OptiMOS Power-Transistor
Product Summary
Feature
VDS 55 V
• N-Channel
R DS(on) 33 mΩ
• Enhancement mode
ID 5.2 A
• Logic Level
SOT 223

Type Package Ordering Code Marking

BSP603S2L SOT 223 Q67060-S7213 2N603L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TA=25°C 5.2
TA=70°C 4.1
Pulsed drain current ID puls 21
TA=25°C
Gate source voltage VGS ± 20 V
Power dissipation Ptot 1.8 W
TA=25°C

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/00

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 BSP603S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - 15 20 K/W
(Pin 4)
Thermal resistance, chip to ambient air: RthJA
@ min. footprint - - 120
@ 6 cm2 cooling area 1) - - 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 55 - - V
V GS=0V, I D=1mA

Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2

ID=50µA

Zero gate voltage drain current IDSS µA

V DS=55V, V GS=0V, Tj=25°C - 0.1 1
V DS=55V, V GS=0V, Tj=150°C - 10 100
Gate-source leakage current IGSS - 10 100 nA
V GS=20V, VDS=0V

Drain-source on-state resistance RDS(on) - 27 40 mΩ

V GS=4.5V, ID=2.6A

Drain-source on-state resistance RDS(on) - 23 33

V GS=10V, ID=2.6A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

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 BSP603S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS ≥2*I D*RDS(on)max, 8.9 17.8 - S
ID=5.2

Input capacitance Ciss VGS =0V, VDS =25V, - 1034 1390 pF

Output capacitance Coss f=1MHz - 244 325
Reverse transfer capacitance Crss - 75 110
Turn-on delay time td(on) VDD =30V, VGS=4.5V, - 10.8 16 ns
ID=5.2A,
RG=5.6Ω

Rise time tr VDD =30V, VGS=4.5V, - 16 24

Turn-off delay time td(off) ID=5.2mA, - 28 40
Fall time tf RG=5.6Ω - 15 23

Gate Charge Characteristics

Gate to source charge Qgs VDD =44V, ID=5.2A - 3.5 4.6 nC
Gate to drain charge Qgd - 10.6 16
Gate charge total Qg VDD =44V, ID=5.2A, - 31 42
VGS =0 to 10V

Gate plateau voltage V(plateau) VDD =44V, ID=5.2A - 3 - V

Reverse Diode
Inverse diode continuous IS TA=25°C - - 5.2 A
forward current
Inv. diode direct current, pulsed ISM - - 21
Inverse diode forward voltage VSD VGS =0V, IF=5.2A - 0.8 1.1 V
Reverse recovery time trr VR =30V, IF=lS , - 46 58 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 44 55 nC

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 BSP603S2L
1 Power dissipation 2 Drain current
Ptot = f (TC) ID = f (TC)
parameter: V GS≥ 4 V parameter: V GS≥ 10 V
BSP603S2L BSP603S2L
2.4 6
W A

2 5

1.8 4.5

1.6 4
Ptot

ID
1.4 3.5

1.2 3

1 2.5

0.8 2

0.6 1.5

0.4 1

0.2 0.5

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

3 Safe operating area 4 Max. transient thermal impedance

ID = f ( V DS ) ZthJC = f (t p)
parameter : D = 0 , TC = -- parameter : D = t p/T
2 BSP603S2L BSP603S2L
10 10 2
K/W
A /I D
S
VD tp = 160.0µs
= 10 1
)
on
S(
10 1 RD
ZthJC

1 ms 10 0
ID

10 0 10 ms 10 -1
D = 0.50
0.20

10 -2 0.10
0.05
10 -1 single pulse 0.02
10 -3 0.01
DC

10 -2 -1 0 1 2
10 -4 -6 -5 -4 -3 -2 -1 0 2
10 10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

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 BSP603S2L
5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS); Tj=25°C RDS(on) = f (ID)
parameter: tp = 80 µs parameter: V GS
BSP603S2L BSP603S2L
13 Ptot = 1.8W 110
A
Ω d
ih VGS [V]
11 gf e
a 2.8
90
b 3.0
10

RDS(on)
c 3.2
80
9 d 3.4
d
e 3.6 70 e
ID

8
f 3.8

7 g 4.0 60
h 4.5
6 50 f
i 10.0

5
c 40 g
4
30 h
3 i
20
2 b
VGS [V] =

1 10 d e f g h i
3.4 3.6 3.8 4.0 4.5 10.0
a
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 2 4 6 8 A 11
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C
parameter: tp = 80 µs parameter: gfs
11 26
A S

22
9
20
8
18
gfs

7
ID

16

6 14

5 12

10
4
8
3
6
2
4
1 2

0 0
0 0.5 1 1.5 2 2.5 V 3.5 0 2 4 6 8 A 12
VGS ID

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 BSP603S2L
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : ID = 2.6 A, VGS = 10 V parameter: V GS = VDS
BSP603S2L
100 2.5

V
80
250 µA
RDS(on)

VGS(th)
70

60 1.5
50 µA
50

40 98% 1

30
typ
20 0.5

10

0 0
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD)
parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs
4
10 10 2 BSP603S2L

pF A

Ciss
10 3 10 1
IF
C

Coss

Crss
10 2 10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 1 10 -1
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD

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 BSP603S2L
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS = f (QGate) V(BR)DSS = f (Tj)
parameter: ID = 5.2 A pulsed parameter: ID=10 mA
BSP603S2L BSP603S2L
16 66

V V

V(BR)DSS
12 62
VGS

10 60
0,2 VDS max
0,8 VDS max
8 58

6 56

4 54

2 52

0 50
0 5 10 15 20 25 30 35 40 nC 50 -60 -20 20 60 100 °C 180
Q Gate Tj

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 BSP603S2L

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© Infineon Technologies AG 1999
All Rights Reserved.

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