VNN3NV04 / VNS3NV04

® / VND3NV04 / VND3NV04-1
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET

TYPE RDS(on) Ilim Vclamp 2

VNN3NV04
VNS3NV04 3
120 mΩ 3.5 A 40 V 2
VND3NV04 1
SOT-223 SO-8
VND3NV04-1

n LINEAR CURRENT LIMITATION

n THERMAL SHUT DOWN 3 2
3
1
n SHORT CIRCUIT PROTECTION 1
TO252 (DPAK) TO251 (IPAK)
n INTEGRATED CLAMP
ORDER CODES:
n LOW CURRENT DRAWN FROM INPUT PIN
SOT-223 VNN3NV04
n DIAGNOSTIC FEEDBACK THROUGH INPUT SO-8 VNS3NV04
PIN TO-252 (DPAK) VND3NV04
n ESD PROTECTION TO-251 (IPAK) VND3NV04-1
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING) intended for replacement of standard Power
n COMPATIBLE WITH STANDARD POWER MOSFETS from DC up to 50KHz applications.
MOSFET Built in thermal shutdown, linear current limitation
DESCRIPTION and overvoltage clamp protect the chip in harsh
The VNN3NV04, VNS3NV04, VND3NV04 environments.
VND3NV04-1, are monolithic devices designed in Fault feedback can be detected by monitoring the
STMicroelectronics VIPower M0-3 Technology, voltage at the input pin.
BLOCK DIAGRAM
DRAIN
2

Overvoltage
Clamp

INPUT
Gate
1 Control

Linear
Current
Over Limiter
Temperature

3
SOURCE
FC01000

February 2003 1/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

ABSOLUTE MAXIMUM RATING

Value
Symbol Parameter Unit
SOT-223 SO-8 DPAK/IPAK
VDS Drain-source Voltage (VIN=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IIN Input Current +/-20 mA
RIN MIN Minimum Input Series Impedance 220 Ω
ID Drain Current Internally Limited A
IR Reverse DC Output Current -5.5 A
VESD1 Electrostatic Discharge (R=1.5KΩ, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 16500 V
(R=330Ω, C=150pF)
Ptot Total Dissipation at Tc=25°C 7 8.3 35 W
Tj Operating Junction Temperature Internally limited °C
Tc Case Operating Temperature Internally limited °C
Tstg Storage Temperature -55 to 150 °C

CONNECTION DIAGRAM (TOP VIEW)

SO-8 Package (*)

SOURCE 1 8 DRAIN
SOURCE DRAIN
SOURCE DRAIN
INPUT 4 5 DRAIN

(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.

CURRENT AND VOLTAGE CONVENTIONS

ID

VDS
DRAIN
IIN RIN
INPUT

SOURCE

VIN

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 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

THERMAL DATA
Value
Symbol Parameter Unit
SOT-223 SO-8 DPAK IPAK
Rthj-case Thermal Resistance Junction-case}}} MAX 18 3.5 3.5 °C/W
Rthj-lead Thermal Resistance Junction-lead MAX 15 °C/W
Rthj-amb Thermal Resistance Junction-ambient MAX 70(*) 65(*) 54(*) 100 °C/W

(*) When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min Typ Max Unit
Drain-source Clamp
VCLAMP VIN=0V; ID=1.5A 40 45 55 V
Voltage
Drain-source Clamp
VCLTH VIN=0V; ID=2mA 36 V
Threshold Voltage
VINTH Input Threshold Voltage VDS=VIN; ID=1mA 0.5 2.5 V
Supply Current from Input
IISS VDS=0V; VIN=5V 100 150 µA
Pin
Input-Source Clamp IIN=1mA 6 6.8 8
VINCL V
Voltage IIN=-1mA -1.0 -0.3
Zero Input Voltage Drain VDS=13V; VIN=0V; Tj=25°C 30
IDSS µA
Current (VIN=0V) VDS=25V; VIN=0V 75

ON
Symbol Parameter Test Conditions Min Typ Max Unit
Static Drain-source On VIN=5V; ID=1.5A; Tj=25°C 120
RDS(on) mΩ
Resistance VIN=5V; ID=1.5A 240

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC
Symbol Parameter Test Conditions Min Typ Max Unit
Forward
gfs (*) VDD=13V; ID=1.5A 5.0 S
Transconductance
COSS Output Capacitance VDS=13V; f=1MHz; VIN=0V 150 pF

SWITCHING
Symbol Parameter Test Conditions Min Typ Max Unit
td(on) Turn-on Delay Time 90 300 ns
VDD=15V; ID=1.5A
tr Rise Time 250 750 ns
Vgen=5V; Rgen=RIN MIN=220Ω
td(off) Turn-off Delay Time 450 1350 ns
(see figure 1)
tf Fall Time 250 750 ns
td(on) Turn-on Delay Time 0.45 1.35 µs
VDD=15V; ID=1.5A
tr Rise Time 2.5 7.5 µs
Vgen=5V; Rgen=2.2 KΩ
td(off) Turn-off Delay Time 3.3 10.0 µs
(see figure 1)
tf Fall Time 2.0 6.0 µs
VDD=15V; ID=1.5A
(dI/dt)on Turn-on Current Slope 4.7 A/µs
Vgen=5V; Rgen=RIN MIN=220Ω
VDD=12V; ID=1.5A; VIN=5V
Qi Total Input Charge 8.5 nC
Igen=2.13mA (see figure 5)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min Typ Max Unit
VSD (*) Forward On Voltage ISD=1.5A; VIN=0V 0.8 V
trr Reverse Recovery Time ISD=1.5A; dI/dt=12A/µs 107 ns
Qrr Reverse Recovery Charge VDD=30V; L=200µH 37 µC
IRRM Reverse Recovery Current (see test circuit, figure 2) 0.7 A

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit
Ilim Drain Current Limit VIN=5V; VDS=13V 3.5 5 7 A
Step Response Current VIN=5V; VDS=13V
tdlim 10 µs
Limit
Overtemperature
Tjsh 150 175 200 °C
Shutdown
Tjrs Overtemperature Reset 135 °C
Igf Fault Sink Current VIN=5V; VDS=13V; Tj=Tjsh 10 15 20 mA
starting Tj=25°C; VDD=24V
Single Pulse
Eas VIN=5V Rgen=RIN MIN=220Ω; L=24mH 100 mJ
Avalanche Energy
(see figures 3 & 4)

(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%

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2
 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

PROTECTION FEATURES - OVERTEMPERATURE AND SHORT CIRCUIT

During normal operation, the INPUT pin is PROTECTION:
electrically connected to the gate of the internal these are based on sensing the chip temperature
power MOSFET through a low impedance path. and are not dependent on the input voltage. The
The device then behaves like a standard power location of the sensing element on the chip in the
MOSFET and can be used as a switch from DC up power stage area ensures fast, accurate detection
to 50KHz. The only difference from the user’s of the junction temperature. Overtemperature
standpoint is that a small DC current IISS (typ. cutout occurs in the range 150 to 190 °C, a typical
100µA) flows into the INPUT pin in order to supply value being 170 °C. The device is automatically
the internal circuitry. restarted when the chip temperature falls of about
15°C below shut-down temperature.
The device integrates:
- STATUS FEEDBACK:
- OVERVOLTAGE CLAMP PROTECTION:
in the case of an overtemperature fault condition
internally set at 45V, along with the rugged (Tj > Tjsh), the device tries to sink a diagnostic
avalanche characteristics of the Power MOSFET current Igf through the INPUT pin in order to
stage give this device unrivalled ruggedness and indicate fault condition. If driven from a low
energy handling capability. This feature is mainly impedance source, this current may be used in
important when driving inductive loads. order to warn the control circuit of a device
- LINEAR CURRENT LIMITER CIRCUIT: shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
limits the drain current ID to Ilim whatever the the current Igf, the INPUT pin will fall to 0V. This
INPUT pin voltages. When the current limiter is will not however affect the device operation:
active, the device operates in the linear region, so no requirement is put on the current capability
power dissipation may exceed the capability of the of the INPUT pin driver except to be able to
heatsink. Both case and junction temperatures supply the normal operation drive current IISS.
increase, and if this phase lasts long enough,
junction temperature may reach the Additional features of this device are ESD
overtemperature threshold Tjsh. protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Fig.1: Switching Time Test Circuit for Resistive Load

VD

Rgen
Vgen

ID

90%

tr tf
10%
t
td(on) td(off)
Vgen

Fig.2: Test Circuit for Diode Recovery Times

A
A
D
I FAST L=100uH
OMNIFET DIODE

S B
B

220Ω D
VDD
Rgen
I
OMNIFET

Vgen
S

8.5 Ω

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1
 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Thermal Impedance for DPAK/IPAK Thermal Impedance for SOT-223

7/21
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Fig. 3: Unclamped Inductive Load Test Circuits Fig. 4: Unclamped Inductive Waveforms

RGEN
VIN

PW

Fig. 5: Input Charge Test Circuit

GEN
VIN

ND8003

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 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Source-Drain Diode Forward Characteristics Static Drain Source On Resistance

Vsd (mV) Rds(on) (mohms)
1100 1000
Tj=-40ºC
1050 900
Vin=0V Vin=2.5V
1000 800

950 700

900 600
Tj=25ºC
850 500

800 400

750 300
Tj=150ºC
700 200

650 100

600 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55
Id (A) Id(A)

Derating Curve Static Drain-Source On resistance Vs. Input

Voltage
Rds(on) (mohms)
300

275

250

225 Tj=150ºC

200

175 Id=3.5A
Id=1A
150

125 Tj=25ºC

100
Tj=-40ºC Id=3.5A
75 Id=1A

Id=3.5A
50
Id=1A

25

0
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)

Static Drain-Source On resistance Vs. Input Transconductance

Voltage
Gfs (S)
Rds(on) (mohms)
11
250
10
225 Vds=13V Tj=-40ºC
Id=1.5A 9
200 Tj=25ºC
8
175 Tj=150ºC
7
Tj=150ºC
150 6

125 5

100 4

75 3
Tj=25ºC
50 2
Tj=-40ºC
1
25
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
3 3.5 4 4.5 5 5.5 6 6.5
Id (A)
Vin(V)

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Static Drain-Source On Resistance Vs. Id Transfer Characteristics

Rds(on) (mohms) Idon (A)
250
6

225 5.5
Vin=5V Vds=13.5V
200 5
Tj=150ºC
4.5
175
4
150 Tj=150ºC
3.5
125 3
Tj=25ºC Tj=-40ºC
100 2.5

75 2

1.5
50 Tj=25ºC
Tj= - 40ºC 1
25
0.5
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Id (A) Vin (V)

Turn On Current Slope Turn On Current Slope

di/dt(A/us) di/dt(A/usec)
5 1.75

4.5
Vin=5V 1.5
4 Vdd=15V Vin=3.5V
Id=1.5A 1.25 Vdd=15V
3.5
Id=1.5A
3
1
2.5
0.75
2

1.5 0.5

1
0.25
0.5

0 0
0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm) Rg(ohm)

Input Voltage Vs. Input Charge Turn off drain source voltage slope
Vin (V) dv/dt(V/usec)
9 300

275
8
Vds=1V 250 Vin=5V
7 Id=1.5A Vdd=15V
225
Id=1.5A
6 200

175
5
150

4 125
100
3
75
2 50

1 25
0
0 0 500 1000 1500 2000 2500
0 1 2 3 4 5 6 7 8 9 10 11 250 750 1250 1750 2250

Qg (nC) Rg(ohm)

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 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Turn Off Drain-Source Voltage Slope Capacitance Variations

dv/dt(V/usec) C(pF)
300 350
275

250 Vin=3.5V
300
Vdd=15V f=1MHz
225
Id=1.5A
Vin=0V
200 250
175

150
200
125
100
150
75

50
100
25
0
0 500 1000 1500 2000 2500 50
250 750 1250 1750 2250 0 5 10 15 20 25 30 35
Rg(ohm) Vds(V)

Switching Time Resistive Load Switching Time Resistive Load

t(usec) t(nsec)
4 900

3.5 800
td(off) tr Vdd=15V
Vdd=15V
3 700 Id=1.5A
Id=1.5A
Vin=5V tr Rg=220ohm
600
2.5

500
2
tf
400
1.5 td(off)
300
1
200
tf
0.5 td(on)
td(on)
100
0
0 500 1000 1500 2000 2500 0
250 750 1250 1750 2250 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm) Vin(V)

Output Characteristics Normalized On Resistance Vs. Temperature

Id (A) Rds(on) (mOhm)

5 4
Vin=5V
4.5
Vin=4V 3.5
4 Vin=5V
Id=1.5A
3.5 3
Vin=3V
3
2.5
2.5
2
2

1.5 1.5

1
1
0.5

0 0.5
0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175
Vds (V) Tc )ºC)

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Normalized Input Threshold Voltage Vs. Normalized Current Limit Vs. Junction
Temperature Temperature
Vinth (V) Ilim (A)
2 10

1.8 9

1.6
Vds=Vin Vin=5V
8
Id=1mA Vds=13V
1.4 7

1.2 6

1 5

0.8 4

0.6 3

0.4 2

0.2 1

0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)

Step Response Current Limit

Tdlim(usec)
13

12.5
Vin=5V
12
Rg=220ohm
11.5

11

10.5

10

9.5

8.5

7.5
5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)

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 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

TO-251 (IPAK) MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H
C
A

A3
C2

A1

L2 D L
B3

B6

B5
B
3
=

=
B2

G
E

2
=

=
1

L1

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

TO-252 (DPAK) MECHANICAL DATA

mm.
DIM.
MIN. TYP MAX.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
B 0.64 0.90
B2 5.20 5.40
C 0.45 0.60
C2 0.48 0.60
D 6.00 6.20
D1 5.1
E 6.40 6.60
E1 4.7
e 2.28
G 4.40 4.60
H 9.35 10.10
L2 0.8
L4 0.60 1.00
R 0.2
V2 0° 8°
Package Weight Gr. 0.29

P032P

14/21

1
 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

SOT-223 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 1.8 0.071

B 0.6 0.7 0.85 0.024 0.027 0.033

B1 2.9 3 3.15 0.114 0.118 0.124

c 0.24 0.26 0.35 0.009 0.01 0.014

D 6.3 6.5 6.7 0.248 0.256 0.264

e 2.3 0.09

e1 4.6 0.181

E 3.3 3.5 3.7 0.13 0.138 0.146

H 6.7 7 7.3 0.264 0.276 0.287

V 10 (max)
A1 0.02 0.1 0.0008 0.004

0046067

15/21
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

SO-8 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068

a1 0.1 0.25 0.003 0.009

a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

F 8 (max.)

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 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

End

Start

Top No components Components No components

cover
tape 500mm min
Empty components pockets 500mm min
saled with cover tape.

User direction of feed

17/21

1
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
SO-8 TUBE SHIPMENT (no suffix)

B
C Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532
A A 3.2
B 6
C (± 0.1) 0.6

All dimensions are in mm.

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm. End

Start

Top No components Components No components

cover
tape 500mm min
Empty components pockets 500mm min
saled with cover tape.

User direction of feed

18/21
 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)

A
6 .7 1 .8 3 .0 1 .6 C Base Q.ty 75
Bulk Q.ty 3000
2 .3 Tube length (± 0.5) 532
6 .7
A 6
2 .3
B B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

End

Start

Top No components Components No components

cover
tape 500mm min
Empty components pockets 500mm min
saled with cover tape.

User direction of feed

19/21
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

IPAK TUBE SHIPMENT (no suffix)

A
C

Base Q.ty 75
Bulk Q.ty 3000
Tube length (± 0.5) 532
B A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

20/21

1
 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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