General purpose small signal amplifier
(50V, 0.15A)
2SC4081UB
zApplications zDimensions (Unit : mm)
General purpose small signal amplifier
UMT3F
2.0
0.32 0.9
zFeatures
1.25 0.425
0.53
1) Low Cob. (3)
Cob=2.0pF (Typ.)
2.1
2) Complements the 2SA4081.
0.425
0.53
(1) (2)
0.65 0.65 0.13
1.3
zStructure
NPN silicon epitaxial planar transistor Each lead has same dimensions
(1) Base
(2) Emitter
∗
(3) Collector Abbreviated symbol : B
∗ = Denotes hFE
zAbsolute maximum (Ta=25°C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
IC 150 mA
Collector current
ICP ∗1 200 mA
Power dissipation PD ∗2 200 mW
Junction temperature Tj 150 °C
Range of storage temperature Tstg −55 to +150 °C
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA
Collector cutoff current ICBO − − 100 nA VCB=60V
Emitter cutoff current IEBO − − 100 nA VEB=7V
Collector-emitter saturation voltage VCE(sat) − − 400 mV IC/IB=50mA/5mA
DC current gain hFE 82 − 560 − VCE=6V, IC=1mA
Transition frequency fT − 180 − MHz VCE=12V, IE=−2mA, f=100MHz
Output capacitance Cob − 2.0 3.5 pF VCB=12V, IE=0A, f=1MHz
hFE rank categories
Rank P Q R S
hFE 82 to 180 120 to 270 180 to 390 270 to 560
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1/2 2009.03 - Rev.B
c 2009 ROHM Co., Ltd. All rights reserved.
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2SC4081UB Data Sheet
zElectrical characterristic curves
0.50mA
50 100 10
Ta=25°C mA Ta=25°C 30µA
VCE=6V 0.45 A
COLLECTOR CURRENT : IC (mA)
0.40m
COLLECTOR CURRENT : IC (mA)
27µA
COLLECTOR CURRENT : IC (mA)
20 0.35 A
m
80 8 24µA
10 0.30mA
21µA
5 0.25mA
60 6 18µA
25°C
Ta=100°C
0.20mA
−55°C
15µA
2
0.15mA 12µA
40 4
1
0.10mA 9µA
0.5 6µA
20 2
0.05mA
0.2 3µA
0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( Ι ) characteristics ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
500 500 0.5
Ta=25°C VCE=5V Ta=25°C
Ta=100°C
0.2
DC CURRENT GAIN : hFE
25°C
DC CURRENT GAIN : hFE
200 VCE=5V 200
3V −55°C
1V IC/IB=50
0.1 20
100 100 10
0.05
50 50
0.02
20 20
10 0.01
10
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig. 6 Collector-emitter saturation
collector current ( Ι ) collector current ( ΙΙ ) voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0.5 0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=10 IC/IB=50 Ta=25°C
TRANSITION FREQUENCY : fT (MHz)
VCE=6V
500
0.2 Ta=100°C
0.2
25°C
Ta=100°C −55°C
0.1 25°C 0.1
−55°C 200
0.05 0.05
0.02 100
0.02
0.01 0.01
50
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)
Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Gain bandwidth product vs.
voltage vs. collector current ( Ι ) voltage vs. collector current (ΙΙ) emitter current
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
20 Ta=25°C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C f=32MHZ
200
EMITTER INPUT CAPACITANCE : Cib (pF)
f=1MHz VCB=6V
IE=0A
10 Cib IC=0A
100
5
50
2 20
Co
b
1 10
−0.2 −0.5 −1 −2 −5 −10
0.2 0.5 1 2 5 10 20 50
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Collector output capacitance vs. Fig.11 Base-collector time constant
collector-base voltage vs. emitter current
Emitter input capacitance vs.
emitter-base voltage
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2/2 2009.03 - Rev.B
c 2009 ROHM Co., Ltd. All rights reserved.
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