ISC015N06NM5LF2

MOSFET
OptiMOSTM5LinearFET2,60V TDSON-8FL(enlargedsourceinterconnection)
8
7
Features 6
5
•Idealforhot-swap,batteryprotectionande-fuseapplications
•Verylowon-resistanceRDS(on) 1 5
2 6
•WidesafeoperatingareaSOA 3 7
•N-channel,normallevel 4 8

•100%avalanchetested
4
•Pb-freeleadplating;RoHScompliant 3
•Halogen-freeaccordingtoIEC61249-2-21 2
1

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain
Pin 5-8

Table1KeyPerformanceParameters Gate *1

Parameter Value Unit Pin 4

VDS 60 V Source
*1: Internal body diode Pin 1-3
RDS(on),max 1.55 mΩ
ID 275 A
I(VDS=30V,tp=10ms) 8.3 A

Type/OrderingCode Package Marking RelatedLinks

ISC015N06NM5LF2 PG-TDSON-8 FL 15N06LF2 -

Final Data Sheet 1 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 2 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 275 VGS=10V,TC=25°C
Continuous drain current1) ID - - 195 A VGS=10V,TC=100°C
- - 32 VGS=10V,TA=25°C,RthJA=50°C/W2)
Pulsed drain current3) ID,pulse - - 1100 A TC=25°C
Avalanche energy, single pulse4) EAS - - 580 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 217 TC=25°C
Power dissipation Ptot W
- - 3.0 TA=25°C,RthJA=50°C/W2)
Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case,
RthJC - - 0.7 °C/W -
bottom
Thermal resistance, junction - case,
RthJC - - 20 °C/W -
top
Thermal resistance, junction - ambient,
RthJA - - 50 °C/W -
6 cm² cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagrams 3 and 4 for more detailed information
4)
See Diagram 14 for more detailed information
Final Data Sheet 3 Rev.2.1,2023-11-08
 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.25 3.0 3.45 V VDS=VGS,ID=120µA
- 0.1 1 VDS=60V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) - 1.3 1.55 mΩ VGS=10V,ID=50A
Gate resistance RG - 2.0 2.6 Ω -
Transconductance 1)
gfs 28 56 - S |VDS|≥2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 6900 9000 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance 1)
Coss - 1300 1700 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance 1)
Crss - 55 96 pF VGS=0V,VDS=30V,f=1MHz
VDD=30V,VGS=10V,ID=50A,
Turn-on delay time td(on) - 17 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Rise time tr - 16 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Turn-off delay time td(off) - 31 - ns
RG,ext=1.6Ω
VDD=30V,VGS=10V,ID=50A,
Fall time tf - 15 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 41 - nC VDD=30V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 21 - nC VDD=30V,ID=50A,VGS=0to10V
Gate to drain charge 1)
Qgd - 16 24 nC VDD=30V,ID=50A,VGS=0to10V
Switching charge Qsw - 36 - nC VDD=30V,ID=50A,VGS=0to10V
Gate charge total 1)
Qg - 90 113 nC VDD=30V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 5.9 - V VDD=30V,ID=50A,VGS=0to10V
Output charge 1)
Qoss - 91 121 nC VDS=30V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.1,2023-11-08
 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 163 A TC=25°C
Diode pulse current IS,pulse - - 1100 A TC=25°C
Diode forward voltage VSD - 0.82 1.2 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time 1)
trr - 39 78 ns VR=30V,IF=50A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 42 84 nC VR=30V,IF=50A,diF/dt=100A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.1,2023-11-08
 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
250 300

250
200

200

150
Ptot[W]

ID[A]
150

100

100

50
50

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Safeoperatingarea
4
10 104

1 µs
103 103 1 µs
10 µs
10 µs
100 µs
100 µs
102 1 ms 102
10 ms 1 ms
ID[A]

ID[A]

10 ms
DC
1 1
10 10
DC

100 100

10-1 10-1
10-1 100 101 102 10-1 100 101 102
VDS[V] VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=125°C;D=0;parameter:tp

Final Data Sheet 6 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

Diagram5:Max.transientthermalimpedance Diagram6:Typ.outputcharacteristics
1
10 1200
single pulse 15 V
0.01 12 V
0.02
0.05 10 V
1000
0.1
0.2
100 0.5

800
9V
ZthJC[K/W]

ID[A]
10-1 600

8V
400

10-2

200

10-3 0
10-6 10-5 10-4 10-3 10-2 10-1 100 0 1 2 3 4 5
tp[s] VDS[V]
ZthJC=f(tp);parameter:D=tp/T ID=f(VDS),Tj=25°C;parameter:VGS

Diagram7:Typ.drain-sourceonresistance Diagram8:Typ.transfercharacteristics
3.5 1200

3.0
1000
25 °C
8V
2.5
9V 800 175 °C

2.0
RDS(on)[mΩ]

ID[A]

10 V 600

1.5
12 V
400
1.0
15 V

200
0.5

0.0 0
0 100 200 300 400 500 600 0 2 4 6 8 10 12
ID[A] VGS[V]
RDS(on)=f(ID),Tj=25°C;parameter:VGS ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj

Final Data Sheet 7 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

Diagram9:Typ.drain-sourceonresistance Diagram10:Normalizeddrain-sourceonresistance
3.5 2.0

1.8
3.0
1.6

2.5

RDS(on)(normalizedto25°C)
175 °C 1.4

1.2
2.0
RDS(on)[mΩ]

1.0

1.5
0.8

1.0 0.6
25 °C
0.4
0.5
0.2

0.0 0.0
6 7 8 9 10 11 12 13 14 15 16 -75 -50 -25 0 25 50 75 100 125 150 175 200
VGS[V] Tj[°C]
RDS(on)=f(VGS),ID=50A;parameter:Tj RDS(on)=f(Tj),ID=50A,VGS=10V

Diagram11:Typ.gatethresholdvoltage Diagram12:Typ.capacitances
4.0 104

3.5 Ciss

1200 µA
3.0

103
2.5 120 µA
Coss
VGS(th)[V]

C[pF]

2.0

1.5
102

1.0

Crss
0.5

0.0 101
-75 -50 -25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60
Tj[°C] VDS[V]
VGS(th=f(Tj),VGS=VDS;parameter:ID C=f(VDS);VGS=0V;f=1MHz

Final Data Sheet 8 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

Diagram13:Forwardcharacteristicsofreversediode Diagram14:Avalanchecharacteristics
4
10 102
25 °C
25 °C, max
175 °C
175 °C, max

103
25 °C

100 °C
150 °C

IAV[A]
IF[A]

102 101

101

100 100
0.0 0.4 0.8 1.2 1.6 2.0 100 101 102 103
VSD[V] tAV[µs]
IF=f(VSD);parameter:Tj IAS=f(tAV);RGS=25Ω;parameter:Tj,start

Diagram15:Typ.gatecharge Diagram16:Drain-sourcebreakdownvoltage
10 65
12 V
9 30 V
48 V 64

8
63
7

62
6
VBR(DSS)[V]
VGS[V]

5 61

4
60

3
59
2

58
1

0 57
0 10 20 30 40 50 60 70 80 90 100 -75 -50 -25 0 25 50 75 100 125 150 175 200
Qgate[nC] Tj[°C]
VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

Diagram Gate charge waveforms

Final Data Sheet 10 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

5PackageOutlines

DOCUMENT NO.
Z8B000193699
REVISION
04
MILLIMETERS
DIMENSION
MIN. MAX. SCALE 10:1
A 0.90 1.20
0.15 0.35 0 1 2 3mm
A1
b 0.26 0.54
D 4.80 5.35
D1 3.70 4.40
EUROPEAN PROJECTION
D2 0.00 0.23
E 5.70 6.10
E1 5.90 6.42
E2 3.88 4.42
e 1.27
L 0.69 0.90 ISSUE DATE
M 0.45 0.69 05.11.2019

Figure1OutlinePG-TDSON-8FL,dimensionsinmm

Final Data Sheet 11 Rev.2.1,2023-11-08

 OptiMOSTM5LinearFET2,60V
ISC015N06NM5LF2

RevisionHistory
ISC015N06NM5LF2

Revision:2023-11-08,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2023-11-08 Update sales name and marking

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Final Data Sheet 12 Rev.2.1,2023-11-08