Lesson 7.
FOUR-LAYER DIODES
The basic thyristor (also known as Shockley diode or four-layer diode) is a 4-layer device with two terminals, the
anode and the cathode. It is constructed of four semiconductor layers that form a pnpn structure.
A
The device acts as a switch and remains
A off until the forward voltage reaches a
P
N certain value; then it turns on and
P conducts. Conduction continues until
N
the current is reduced below a specified
K
value.
K
Basic Construction Schematic Symbol
Characteristics Graph
Forward-Breakover Voltage.
When forward-biased, the 4-layer diode acts as an open
switch. The forward-blocking region of the forward-bias has
a very high forward resistance (hence, an open) and
therefore is in the off state. The forward-blocking region
exists from VAK = 0 up to a value of VAK called the forward-
breakover voltage VBR(F).
(From Floyd, “Electronic Device” p.584)
Example:
1. A certain 4-layer diode is biased in the forward-blocking region with an anode-to-cathode voltage of 20 V.
Under this bias condition, the anode current is 1 μA. Determine the resistance of the diode in the forward-
blocking region.
Solution:
𝑉𝐴𝐾 20𝑉
𝑅𝐴𝐾 = = = 20 𝑀Ω
𝐼𝐴 1 𝜇𝐴
2. Determine the value of anode current in Figure P1 when the device is on. VBR(F) = 10 V. Assume the forward
voltage drop is 0.9 V.
Solution
RS
The voltage at the anode VA is 0.9 V. The
1.0 kΩ
voltage across RS by KVL,
VBIAS
20V 𝑉𝑅𝑆 = 𝑉𝐵𝐼𝐴𝑆 − 𝑉𝐴 = 20 − 0.9 = 19.1 𝑉
𝑉𝑅𝑆
𝐼𝑅𝑆 = = 19.1 𝑚𝐴
𝑅𝑠
Figure P1
Assignment:
1. The dc voltage VCC is varied. Find Vout and the current I through the diode during the following time
‘interval.’
VCC
36
RL
I 1kΩ
VCC VO
12 VB = 30 V
6 IH = 10 mA
t
to t1 t2 t3
Figure PA-1
2. For the circuit shown in Figure PA-2 with the output shown, determine the following parameters:
a. Vmax
b. Vmin
c. Current through the 10-kΩ resistor at t = to.
d. Current through the 10-kΩ resistor at t = t1.
e. Current through the 10-kΩ resistor at t = t2.
f. Current through the Shockley diode
+20 V
v0
t = t0
S is closed
t
to t1 t2 t3
10 kΩ
v0
C VB = 12 V
IH = 4 mA
3. If the anode current is 2 μA and VAK = 20 V, what is the 4-layer diode’s resistance in the forward-blocking
region?
4. Give at least one application of the 4-layer diode.
