Imaging and Overlay parameters

For Training Purposes Only

ASML Confidential <doc ID from Tango>

/ Slide 1 For training purposes only <module_code>-1v0
COPYRIGHT
© 2003, ASML Holding N.V. (or affiliate companies). All rights reserved.
This documentation is subject to change without notice and contains confidential and proprietary information
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omissions contained herein.

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ASML, ASM Lithography, TWINSCAN, MASKRIGGER, MASKWEAVER, LITHOCRUISER, ATHENA,
QUASAR, IRIS, MICRALIGN, PAS 5500, PAS 5000, 3DAlign, 2DStitching, 3DMetrology, and the ASML logo
are trademarks of ASML Holding N.V. or affiliate companies. The trademarks may be used either alone or in
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Nothing in this documentation is intended to make representations with regard to whether any trademark is
registered or to suggest that any sign other than those mentioned should not be considered to be a
trademark of ASML or of any third party.

ASML Confidential
/ Slide 2 For training purposes only
Introduction

l Goal of the presentation:

l to explain used terminology
l give an overview of imaging and overlay parameters
l This terminology is widely used in the ASML metrology
software and reports

ASML Confidential
/ Slide 3 For training purposes only
Contents

l Inter-field and intra-field, definition

l Imaging
l Intra-field parameters
l Inter-field parameters
l Overlay
l Intra-field parameters
l Inter-field parameters
l Contrast
l Stage servo performance
l Summary

ASML Confidential
/ Slide 4 For training purposes only
Inter-field and intra-field, definition

l Intra-field parameters:
l Parameters determined by intra-field modeling
l modeling assumes that all cells are the same and tries to describe the
average cell.
l non-zero values usually caused by reticle, reticle stage, lens
l also referred to as ‘field’ or ‘lens’ parameters
l Inter-field parameters:
l Parameters determined by inter-field modeling
l modeling assumes that the cells are different and tries to describe the
differences between the cells
l non-zero values usually caused on wafer level, by wafer, wafer stage
l also referred to as ‘wafer’ or ‘grid’ errors

ASML Confidential
/ Slide 5 For training purposes only
‘parameters’ versus ‘errors’

l Off-line tests determine imaging and overlay parameters.

l On-line calibrations determine imaging and overlay parameters.
l During the in-line sequence, the system determines imaging
and overlay parameters.
l During the in-line sequence, all of the above are used to
ensure exposures at the correct settings.
l If any of the machine parameters are not correct, this could
show up on the wafer as an imaging or overlay error.
l To find out the error: perform intra-field or inter-field modeling
on a sample wafer and again determine model parameters.
l Hence in this presentation, we always speak of imaging and
overlay parameters rather than imaging and overlay errors.

ASML Confidential
/ Slide 6 For training purposes only
Imaging - Intra-field parameters

l Focus (Iz)
l Image tilt Ry (IRy)
l Image tilt Rx (IRx)
l Linear (WL) and quadratic wedge (WQ)
l Field Curvature (FC)
l Astigmatism (AST)
l sagittal field curvature
l tangential field curvature
l astigmatism curvature
l Spherical Aberration (SA)
l aberration modelling
ASML Confidential
/ Slide 7 For training purposes only
Focus (Iz)

Example: positive defocus, in the absence of other errors.

Static exposure Dynamic exposure

Scanned image
Aerial image

Wafer surface

Wafer surface

Optical axis

+z

+y

+x
+Rz

ASML Confidential
/ Slide 8 For training purposes only
Image tilt Ry (IRy)

Example: positive image tilt Ry, in the absence of other errors.

Static exposure Dynamic exposure

Scanned image
Aerial image

Wafer surface

Wafer surface

Optical axis

+z

+y

+x
+Rz

ASML Confidential
/ Slide 9 For training purposes only
Image tilt Rx (IRx)

Example: positive image tilt Rx, in the absence of other errors.

Static exposure Dynamic exposure

Aerial image

Wafer surface
Image tilt Rx is not modelled for
dynamic exposures.
IRx has no effect on a scanned
Optical axis exposure, the static defocus
‘averaged out’.
+z
Linear wedge (next slide) is the
+y dynamic equivalent of image tilt
Rx, and does appear in the
+x
+Rz
dynamic modeling.

ASML Confidential
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Linear (WL) and quadratic wedge (WQ)

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Field Curvature (FC)

Example: positive field curvature, in the absence of other errors.

Static exposure Dynamic exposure

Scanned image
Aerial image

Wafer surface

Wafer surface

Optical axis

+z

+y
Field curvature along the y-axis averages out,
only field curvature along the x-axis shows up
on dynamic exposures
+x
+Rz

ASML Confidential
/ Slide 12 For training purposes only
Tangential and sagittal features
H V

H V H V Features with different orientations

have different focal planes
H V H V

H V H V

H V
3 Tangential curvature

z
2
Field curvature
1
Sagittal curvature
0
0 0.5
r 1

ASML Confidential
/ Slide 13 For training purposes only
Astigmatism (AST)

• Astigmatism
• Different focus between sagittal and tangential lines

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About focus, astigmatism, and field curvature...

l Features with different orientation have different focus’

l The two extremes are sagittal features and tangential features

l Internally, the system uses sagittal field curvature (S2) and

tangential field curvature (T2) instead of field curvature.

l For external reporting, the system computes field curvature and

astigmatism curvature using:
FC = ½ ( S2 + T2 )
AC = ½ ( S2 - T2 )

ASML Confidential
/ Slide 15 For training purposes only
 Spherical Aberration (SA)

Point source

Spherically aberrated lens

Fork shaped intensity

Dz

x,y
y,x

TIS intensity plot

Different light angles have different focal points:

• Different pitches have different focal planes
Optical axis
• Image of a point is ‘smeared out’

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/ Slide 16 For training purposes only
Imaging - Inter-field parameters

l Wafer tilt Ry (IRy,inter)

l Rotation scaling (linear xRx, xRy, yRx, yRy)
l Residuals for imaging (xTz, yTz, xRy, xRx, yRy, yRx)

ASML Confidential
/ Slide 17 For training purposes only
Wafer tilt Ry (IRy,inter)
l A wafer chuck is always slightly
rotated (Rx, Ry, Rz).
l A wafer chuck height
measurement is affected by the
real wafer chuck Ry tilt.
l If the system does not know the
real wafer chuck Ry tilt, then a
focus error is made.
l Effect is linear in x.
l Effect is called ‘linear xTz’.
l Effect is eliminated in the in-line
sequence and in the off-line
sequence.

ASML Confidential
/ Slide 18 For training purposes only
Rotation scaling (linear xRx, xRy, yRx, yRy)

l Unwanted rotations (tilt) when moving in x or y can occur

due to interferometer system imperfections
l Example: linear xRy
l Effect is eliminated in the off-line sequence.

ASML Confidential
/ Slide 19 For training purposes only
Residuals for imaging (xTz, yTz, xRy, xRx, yRy, yRx)

l Systematic effects discussed so far

l Linear effects.
l Additional systematic errors occur
l 2nd order xTz is eliminated during off-line sequence.
l Higher order effects
l also called ‘leftovers’ or ‘residuals’
l Residuals for xTz and yTz are determined in the off-line sequence.
l No residuals for xRy, xRx, yRy, yRx are determined.

ASML Confidential
/ Slide 20 For training purposes only
 Overlay - Intra-field parameters

l Field translation (Tx, Ty) l Second order trapezoid (D2)

l Symmetrical field rotation (Rzs) l Third order distortion (D3)
l Asymmetrical field rotation (Rza) l Fourth order trapezoid (D4)
scan skew (a)
l lfifth order distortion (D5)
l Symmetrical field magnification (Ms) lcombining the xy distortions
l Asymmetrical field magnification (Ma) lscan rotation

scan scaling (b)

l
l Coma
lcoma-x tilt

ASML Confidential
/ Slide 21 For training purposes only
Field translation (Tx, Ty)

Example: negative Tx and Ty, in the absence of other errors.

Static exposure Dynamic exposure

Wafer surface
Wafer surface

Aerial image

Scanned image

x
z

ASML Confidential
/ Slide 22 For training purposes only
 Symmetrical field rotation (Rzs)
Cell x-axis and y-axis rotate by same amount
Example: positive symmetrical field rotation, in the absence of other errors.

Static exposure Dynamic exposure Appearance on wafer

Wafer surface

Wafer surface
Aerial image
Scanned image

x
z

ASML Confidential
/ Slide 23 For training purposes only
 Asymmetrical field rotation (Rza)
Cell x-axis and y-axis rotate by same amount, but in opposite direction.
Example: positive asymmetrical field rotation, in the absence of other errors.

Static exposure Dynamic exposure Appearance on wafer

Scanned image

(asymmetrical field rotation is not

modelled from static exposures)

Wafer surface

ASML Confidential
/ Slide 24 For training purposes only
About scan skew...
Scan skew: cell y-axis rotates, with respect to x-axis.
Example: negative scan skew, in the absence of other errors.

Static exposure Dynamic exposure

Scanned image

(scan skew is not modelled

from static exposures)

Wafer surface

ASML Confidential
/ Slide 25 For training purposes only
About asymmetric rotation and scan skew...
l Rotation of reticle with respect to wafer level causes Rz
rotation of x-axis and y-axis in cell.
l In dynamic modeling, this is described by dynamic rotation (Rz).
l Rotation of reticle stage with respect to wafer stage causes
rotation of y-axis, but not x-axis in cell.
l This is described by scan skew (a).
l Three equivalent parameter sets are in use: (Rzs, Rza),
(Rz_x, Rz_y), and (Rz, a). They relate as follows:
Rzs = ½ ( Rz_x + Rz_y )
Rza = - ½ ( Rz_x - Rz_y )
Rz = Rzs - Rza = Rz_x
a = Rzs + Rza = Rz_y

ASML Confidential
/ Slide 26 For training purposes only
 Symmetrical field magnification (Ms)
The magnification parameters in x and in y are the same.
Example: positive symmetrical magnification, in the absence of other errors.

Dynamic exposure Appearance on wafer

Static exposure

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/ Slide 27 For training purposes only
 Asymmetrical field magnification (Ma)
The magnification parameters in x and in y are the same, but have opposite sign.
Example: negative asymmetrical magnification, in the absence of other errors.

Static exposure Dynamic exposure Appearance on wafer

(asymmetrical field
magnification is not modelled
from static exposures)

ASML Confidential
/ Slide 28 For training purposes only
 About scan scaling...
The y-magnification is incorrect.
Example: positive scan scaling, in the absence of other errors.

Static exposure Dynamic exposure

Scanned image

(scan scaling is not modelled

Wafer surface
from static exposures)

+z

+y

+x
+Rz

ASML Confidential
/ Slide 29 For training purposes only
About magnification and scaling...

l Setting the correct lens magnification is a static issue.

l In dynamic modeling this is described by M, (which is
modeled as the magnification in x, Mx).
l Setting the correct scan length is a dynamic issue: the
speed ratio between reticle level and wafer level.
l In dynamic modeling this is described by scan scaling (b).
l Three equivalent parameter sets are in use: (Ms, Ma),
(Mx, My), and (M, b). They relate as follows:
Ms = ½ ( Mx + My )
Ma = ½ ( Mx - My )
M = Ms + Ma = Mx
b = Ms - Ma = My

ASML Confidential
/ Slide 30 For training purposes only
Second order trapezoid (D2)
The magnification varies along the x- and/or the y- axis.
Example: Positive second order trapezoid in x, in the absence of other errors

Static exposure Dynamic exposure

Aerial image
Wafer surface Aerial image

Wafer surface

y
y

x
x
z
z

No origin displacement! No origin displacement!

Example: Positive second order trapezoid in y, in the absence of other errors

Aerial image

Wafer surface
(trapezoid in y is not modelled
y from dynamic exposures)

x
z

No origin displacement!

ASML Confidential
/ Slide 31 For training purposes only
Third order distortion (D3)
A radial position shift, increasing with r3.
Example: Positive third order distortion, in the absence of other errors
Static exposure Dynamic exposure
Aerial image

Wafer surface Aerial image

Wafer surface

y y

x x
z z

Example: negative third order distortion, in the absence of other errors

Wafer surface
Aerial image

Aerial image Wafer surface

y y

x x
z z

ASML Confidential
/ Slide 32 For training purposes only
Fourth order trapezoid (D4)
The third order distortion varies along the x- and/or the y- axis.
Example: Positive fourth order trapezoid in x, in the absence of other errors
Static exposure Dynamic exposure
Aerial image

Wafer surface Aerial image

Wafer surface

y y

x x
z z

No origin displacement! No origin displacement!

Example: Positive second order trapezoid in y, in the absence of other errors

(trapezoid in y is not modelled

Aerial image Wafer surface
from dynamic exposures)
y

x
No origin displacement!
z

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/ Slide 33 For training purposes only
About fifth order distortion (D5)...
A radial position shift, increasing with r5.
Looks like third order distortion, except a bit sharper.

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/ Slide 34 For training purposes only
About scan rotation...
Reticle rotation (Rz) varies during exposure.
• Intra-field linear yRz is not modeled during setup.
• Reticle level hardware setup is assumed to be sufficiently accurate.

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/ Slide 35 For training purposes only
 Coma (CO)
• Features with different pitches get different xy displacements.
• Image of a point is ‘smeared out’ in xy.
Point source

Coma aberrated lens

z
Fork shaped intensity

x,y
y,x

Optical axis
d
TIS intensity plot

Coma-x and Coma-y are static model parameters.

Coma-x is important for dynamic exposures.
Coma-y is in scan direction and ‘averages out’.

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/ Slide 36 For training purposes only
About coma-x tilt...

coma-x tilt is the variation of coma in the x-direction of the static field.

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/ Slide 37 For training purposes only
Overlay - Inter-field parameters

l Wafer Translation (Tx_inter, Ty_inter)

l Wafer Scaling (Mx_inter, My_inter)
l Wafer Rotation (Rw)
l Non orthogonality (N)

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/ Slide 38 For training purposes only
Wafer Translation (Tx_inter, Ty_inter)

Example: positive Tx and Ty, in the absence of other errors.

• intra-field translation modeling:

Use average mark positions over all
fields to compute field distortions.
• inter-field translation modeling:
Use average field positions to
compute wafer grid distortions.
• Results for translation are identical
except for numerical noise.

• Symmetrical Translation:
all cells same shift in x,
all cells same shift in y.
y

• Asymmetrical translation:
x
z

not symmetrical, see later.

ASML Confidential
/ Slide 39 For training purposes only
Wafer Scaling (Mx_inter, My_inter)
The wafer stage has an incorrect step-size from field to field.
Example: positive scaling in y, Example: positive symmetrical scaling,
in the absence other errors in the absence other errors

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/ Slide 40 For training purposes only
About wafer scaling...

l We have…
scaling in x, Mx_inter
scaling in y, My_inter
symmetrical scaling, Ms_inter
asymmetrical scaling, Ma_inter
l Similar definitions as with intra-field magnification modeling:
Ms_inter = ½ ( Mx_inter + My_inter )
Ma_inter = ½ ( Mx_inter - My_inter )
l On TWINSCAN-t, scaling in x and scaling in y are the
parameters of choice.

ASML Confidential
/ Slide 41 For training purposes only
Wafer Rotation (Rw)
The wafer grid is rotated.
Example: positive symmetrical rotation,
in the absence other errors

• Symmetrical wafer rotation

• Wafer x- and y-axis are rotated the same
• Asymmetrical wafer rotation
• Wafer x- and y-axis are rotated same amount but opposite sign

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/ Slide 42 For training purposes only
About non-orthogonality (N)...
The wafer grid x-axis is rotated.
Example: positive non-orthogonality

To describe wafer x- and y-axis rotation,

wafer rotation and non-orthogonality are
the parameters of choice.

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/ Slide 43 For training purposes only
Rotation scaling

• Wafer stage rotates while moving in x

• Linear xRz
• Cause
• Non parallel interferometer beams

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Residuals for overlay (yTx, xTy, yRz, and xRz)

l All inter-field overlay model parameters discussed so far

were reproducible linear and second order effects.
l Additional systematic effects can also occur
l called ‘leftovers’ or ‘residuals’
l Example
l example wafer shows Tx at
specific y-positions.
l Making a yTx residual map
would improve overlay.
l Remaining systematic errors are
not be calibrated and contribute to
the inter-field ‘fingerprint’ of the system.

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/ Slide 45 For training purposes only
Contrast

l Definition
l Fading
l examples

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/ Slide 46 For training purposes only
Definition of Contrast - Old

I -I
C= max min

I max
+I min

1 Imax
Intensity

Ideal image

Real image
Imin

0
x

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/ Slide 47 For training purposes only
 Definition of Contrast - New

• Normalized Image Log Slope (NILS)

Intensity

threshold
CD

x
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/ Slide 48 For training purposes only
Reduced Contrast

l Contrast can be poor for several reasons:

l Aerial image is constructed with low order Fourier components
only
l Aerial image is less sharp than optimum because of lens
aberrations
l Distortion vector of a feature changes while the feature is being
exposed (fading)
l Substrate-related and resist-related effects

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/ Slide 49 For training purposes only
Focus fading - Example Image Tilt Rx

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Focus fading - Example Field Curvature

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Fading due to D3 or D5

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Stage servo performance

l Synchronisation
l Moving average
l Moving standard deviation

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/ Slide 53 For training purposes only
Synchronization error - definition

l Difference between interferometer set point and measured position

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Moving average

Calculated continuously.
One value reported (the average)
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Moving standard deviation

Calculated continuously.
One value reported (the average)
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Summary

l The above model parameters are used for the data modeling
during
l in-line calibrations (during production sequence)
l on-line calibrations (scheduled maintenance in between lots)
l off-line calibrations (set-up sequence)

l They can be divided in:

l Intra-field model parameters used during intra-field modeling
l Inter field model parameters used during inter-field modeling
l Overlay parameters and imaging parameters

ASML Confidential
/ Slide 57 For training purposes only