Topic 2

Thyristors

II. Thyristors used for Firing Circuits

A. DIAC

Known as the Diode for AC. It is a two-terminal device, bidirectional avalanche diode
which is employed to switch from off state to the on state in both directions. Diac is a triggering
device which is used in conjunction with the triac devices because triac does not have
symmetrical firing in both sides of the waveform. Moreover, it is also used as a trigger device
for SCR. The basic construction schematic symbol and actual picture of diac are shown in
figure 2.1.

Conduction occurs in diac when the break-over voltage is reached with either polarity
across the two terminals. Once break-over is reached, the current direction depends on the
polarity of the voltage across the terminals. However, the device turns off when the current
drops the holding value.

Anode 1 (A1)
N A1
P
N
P
N A2
Anode 2 (A2)

(a) (b) (c)

Figure 2.1. (a) Basic construction, (b) Diac symbol, and (c) actual picture

B. SILICON CONTROLLED SWITCH (SCS)

The Silicon-Controlled Switch (SCS) is similar in construction to the SCR. The

only difference is that it has two (2) gates, the cathode gate and anode gate as shown
in figure 2.2. SCS can be turned ON by either a positive pulse at the cathode gate, or
a negative pulse at the anode gate.
A
GA

GK
K
Figure 2.2. Schematic symbol

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C. SILICON UNILATERAL SWITCH (SUS)

Another break-over device that conducts current in only one direction is the
Silicon Unilateral Switch (SUS) as shown in figure 2.3. The SUS has a third terminal
that is used to alter the break over voltage (VBO) if connected to a zener diode as
shown figure 2.3b.
SUS

A K
Zener
G

(a) (b)
Figure 2.3. (a) Schematic symbol, and (b) SUS combined with Zener diode

D. SILICON BILATERAL SWITCH (SBS)

Another break-over which is capable of triggering triacs is a Silicon Bilateral

Switch (SBS) as shown in figure 2.4. Also called a gate triggered DIAC but it can be
useful without gate terminal. When the gate terminal is not used, it behaves as DIAC.
SBS turns on when break-over voltage is exceeded. It has a lower break-over
voltage (VBO) compared to diacs and usually is less than 10V. It can be used with zener
diode as shown in figure 2.4b.
SBS

A2 A1

VG VBO = 0.7V + VZ
G
Zener
(a) (b)

Figure 2.4. (a) Schematic symbol, and (b) SBS combined with Zener diode

E. QUADRAC

Quadrac is basically a triac with a built-in trigger as shown in figure 2.5.

MT2

G
MT1

Figure 2.5. Schematic symbol

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F. SHOCKLEY DIODE

Figure 2.6 is the schematic symbol of Shockley Diode. Also called Four Layer
Diode thyristor with two (2) terminals. Its behavior is similar to the behavior of SBS and
DIAC except that only forward break-over voltage is possible.

A K

Figure 2.6. Schematic symbol

G. GATE TURN-OFF SWITCH (GTO)

Figure 2.7 is the schematic symbol of Gate turn-off switch (GTO). It is similar
to the SCR except that it can be turned ON or OFF from gate. It does not need a
current diversion or forced commutation circuit to turn it off. The ability to turn OFF the
GTO from the gate makes far simpler circuits than SCR.
A

K
Figure 2.7. Schematic symbol

H. UNIJUNCTION TRANSTOR

Although Unijunction Transistor (UJT) is not a thyristor, however its

characteristics and operation is similar to thyristor. UJT is a three-terminal, single-
junction, two-layer device with characteristics very different from the conventional 2
junction, bipolar transistor as shown in figure 2.8c. The term unijunction refers to the
fact that the UJT has a single PN junction as shown in figure 2.8a. Its basic function
closely resembles a thyristor rather than a transistor. It has high impedance in OFF-
state and low impedance ON-state similar to a thyristor. UJT has a negative resistance
characteristic for a specified operating voltage.

(a) (b) (c) (d)

Figure 2.8. Unijunction Transistor: (a) Basic structure; (b) equivalent circuit;
(c) schematic symbol; and (d) actual picture

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 Shown in figure 2.9 is the characteristic
curve of UJT. When the voltage VE reaches
VP, it will forward biased the PN junction
and current IE will flow causing the UJT to
turn-on. After this, the UJT will operate in a
negative resistance region up to a certain
value of IE.
After the peak-point (VE=VP; IE=IP), VE
decreases as IE continues to increase, thus
producing the negative resistance
characteristic. And beyond the valley-point
the UJT will operate in the saturation state.

Figure 2.10 shows the equivalent circuit of UJT.

It shows that:

RBB = RB1 + RB2

intrinsic stand-off ratio () = RB1/(RB1+RB2)

 = RB1/ RBB

Peak-Point Voltage (VP)

VE = VP =0.7 + (RB1/ RBB)(VBB)

Figure 2.10. UJT equivalent circuit
VP =0.7 + VBB

Sample problem:

1. Determine the value of (a) RB1 and RB2, and (b)VBB and VP for the UJT circuit as
shown in figure 2.11, assume that UJT has typical parameters of =0.65 and RBB =
7k.

VS = 12V VS = 12V

R2 = 400 R2 = 400
Trigger
+
RBB = 7k VBB
-
R1 = 100 R1 = 100

Figure 2.11
Required: a). RB1, RB2; and b) VBB, VP

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 Solution:

a)  = RB1/ RBB RB1 = RBB RB1 = (0.65)(7k) RB1 = 4.55k

RBB = RB1 + RB2 RB2 = RBB - RB1 RB2 = 7k - 4.55k RB2 = 2.45k

b) VBB = RBB (VS)/(R1 + R2 + RBB) VBB = 7k(12) /(100 + 400 + 7k) VBB = 11.2V

VP =0.7 + VBB VP =0.7 + 0.65(11.2V) VP =7.98V

UJT are use in non-sinusoidal oscillators, sawtooth generators, phase control, and
timing circuits. One applications of UJT is for relaxation oscillator as shown in figure 19a. The
capacitor (C) voltage charges towards the supply voltage (VS) via resistor R. When the
capacitor voltage reaches the peak voltage VP the UJT triggers ON.

When triggered, the resistance between the emitter and base 1drops to a low value.
This provides a low resistance path through R1 to discharge voltage at the capacitor C. When
the capacitor voltage decreases to the valley-point voltage (VV), the UJT turns OFF. Then the
process repeats again.

Shown in figure 2.12b (top) is the emitter voltage (VE) waveform developed when the
capacitor is charging to the peak-point voltage (VP) and discharging through R1 (with respect
to time t). While figure 2.12b (bottom) shows waveform of the voltage developed across R1
when the UJT is conducting. The period for respected waveforms can be calculated using:

T = RC ln (VS/(VS-VP))

VS = 12V

R R2 = 400

VR1

C R1 = 100

(a) (b)

Figure 2.12. (a) Relaxation oscillator; and (b) Respected waveforms

To ensure that UJT will turn ON and OFF in the relaxation oscillator, certain condition
must be met. That is R must not limit IE at the peak-point to less than IP. Thus, the condition
for turn-on is

R1 < (VS – VP) /IP ; to turn-on

To ensure turn-off at the valley point, R1 must be large enough that IE can decrease
below the specified value of IV. Thus, the condition for turn-off is

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 R1 > (VS – VV) /IV ; to turn-off

2. Using the given circuit shown in figure 18a. Find the pulse train frequency if R=10k,
and C = 0.22uF.

Required: f

Solution:

T = RC ln (VS/(VS-VP))

T = (10 k)(0.22uF) ln (12/(12-7.98)) T = 2.405 ms

f = 1/T f = 1/2.405 ms f = 415.63 Hz

I. PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT)

Is a four layer PNPN switching device with three terminals and is actually a
type of thyristor and not like UJT. Its only similarity to UJT is that it provides pulses to
trigger thyristors and other power semiconductor devices and is used to replace UJT
in some oscillator applications. Their main difference is that UJT has a fixed internal
resistance ratio while PUT is determined by the external circuitry. Therefore, it allows
the user to set the intrinsic stand-off ratio ().

The basic structure, circuit symbol and actual picture of PUT are shown in
figure 2.13. The gate is connected to the N-type region beside the anode.

A
G

(a) (b) (c)

Figure 2.13. (a) Basic structure; (b) schematic symbol; and (c) Actual picture of PUT
VS Figure 2.14 shows the equivalent circuit of PUT.
+ It shows that:
R2 VG = R1VS / (R1 + R2) = VS
VAK VG
The intrinsic stand-off ratio () = R1 / (R1+R2)
R1
- PUT will fire if VAK = VP

VP = 0.7 + VG ; VP= 0.7 + VS

Figure 2.14. PUT equivalent circuit
1. For the network of figure 2.14, determine the values of R1 and VS for a silicon PUT if
it is determined that  = 0.8, VP = 10.3V and R2 = 5k.

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 Required: a). R1, b) VS

Solution:

a).  = R1 / (R1+R2)

R1 =  (R1 + R2); R1 = 0.8 (R1 + 5k); R1 - 0.8 R1 = 4k; R1 =20k

b). VP= 0.7 + VS

VS = (VP – 0.7)/  VS = (10.3 – 0.7)/ 0.8 VS =12V

USING THYRISTOR FOR DC MOTOR CONTROL

The speed of a DC motor is set by the DC voltage that drives the motor. By varying
the input DC voltage, the speed of the DC motor also varies. However, we can also drive a
DC motor with a pulse train as shown in figure 2.15a. The motor will not respond to the on-off
nature of pulses but rather depends on the average value of the driving voltage. This can be
calculated by:

VAVE = A (PW/T) where: A = pulse amplitude; PW = pulse width ; and T = period

But: Duty Cycle (D.C.) = (100 PW) / T

PW = (D.C.*T) / 100

Therefore: VAVE = (A * D.C.) / 100)

V V
VP
A VAVE
VAVE PW

t T/2
t
T
T

(a) (b)
Figure 2.15. (a) DC Pulse train; and (b) Pulses of
sinusoids
But we can control also a DC motor with pulses of sinusoids just like in figure 2.15b.
By varying and controlling the phase and conduction time of sinusoids pulse, the output
voltage can be varied. Take note that for a half-wave (HW) rectification:

VRMS = VAC = VP / 2 or VP = 2VRMS where: VP = peak voltage

And: VAVE = VDC = VP / 

Shown in figure 2.16a is a SCR circuit for controlling a DC motor. The SCR rectifies
the input ac voltage and convert it to pulsating DC. By controlling the time of conduction (tc),

VAC 7

+
RL V
O
the phase and the output voltage can be varied. Figure 2.16b shows the output waveform of
the circuit.

V
VP

T/2
t
td
tc

(a) (b)

Figure 2.16. (a) SCR as a phase ; and (b) output waveform

To calculate the following:

conduction time (tc): tc = T/2 – td where: td = time delay

T = period

conduction angle (C): (360 * tc) / T or (2 * tc) / T

Thus: VLAVE = (VRMS /) (1 – Cos C)

Sample problem:

1. Using figure 2.16a, find the conduction angle and DC value of a rectified sinusoid
input voltage of 170V and a frequency of 60 Hz under these conditions:
a). td = 0s b). tc = 4ms

Required: a). C b) VLAVE

Solution: a) when td = 0s

C = (360 * tc) / T

T = 1/f T = 1/60 T = 16.667 ms

tc = T/2 – td tc = (16.667 ms/2) – 0 tc = 8.33 ms

C = (360 * 8.33 ms) / 16.667 ms C = 180

VLAVE = (VRMS / ) (1 – Cos C)

VLAVE = (VP / 2) (1 – Cos C) = (170/2) (1 – Cos 180)

VLAVE = 54.1V

a) C = (360 * tc) / T
b) when tc = 4ms

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 C = (360 * tc) / T
C = (360 * 4 ms) / 16.667 ms C = 86.4
VLAVE = (VRMS / ) (1 – Cos C)
VLAVE = (VP / 2) (1 – Cos C) = (170/2) (1 – Cos 86.4)
VLAVE = 25.36V

2. The Four layer diode in figure 2.17 has a break-over voltage (VBO) 30V. The SCR has
a gate turn-on voltage of 2V. The driving voltage is a 170V, 60Hz sine wave (VAC).
a. What voltage do you need at the anode of the four-layer diode to trigger the SCR?
b. Sketch the voltage divider voltage, and determine the delay time and conduction
angle for this circuit?
c. What is the DC value of the load voltage?

Required: a) VA; b) VR2, td, C ; c) VL

Solution:
VS = 170V, 60Hz
a). VA = FLDVBO + SCRVAK = 30 + 2 = 32 V
R1= 25k b). VR2 = (25k) (170V) / (25k +25k) = 85V

VA VR2 = 85 Sin 2 60 td
=
VR2 R2 = 25k V
85V

32V
Figure 2.17. t
T/2
td
tc

85 Sin 2 60 td = 32 Sin 2 60 td = 32/85 td = Sin -1 (32/85) / 2 60

td = 1.024 ms

T = 1/f T = 1/60 T = 16.667 ms

tc = T/2 – td tc = (16.667 ms/2) – 1.024 ms tc = 7.309 ms

C = (360 * tc) / T C = (360 * 7.309 ms) / 16.667 ms C = 157.871

VLAVE = (VRMS / ) (1 – Cos C) VLAVE = (170/ ) (1 – Cos 157.871)

VLAVE = ______V

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 Activity 2: Thyristors as Firing Circuit

1. Determine the value of anode current in figure 1 when the device is on and when the
value of the suppply voltage VS =10V. Assume VBO = 0.7V.
RS =2.2k RL=3k
20V, 60Hz
MT2
R1=80k
10V

MT1
R2=20k
Figure 1

Figure 2

2. The Triac in figure 2 has an input signal voltage of 20Vrms, if the gate turn-on
voltage is 2V.
a. Sketch the voltage divider voltage.
b. On the same plot draw the line representing the trigger voltage for this circuit.
c. What is the delay time and conduction angle for this circuit?

3. Determine the peak-point voltage (VP) for a UJT circuit used as relaxation oscillator
when VS = 12V, η =0.68 and RBB = 7.5KΩ. Refer to figure 3.
4. Calculate the range of R1 in figure 3 that will ensure proper turn-on and turn-off of
the UJT if VV = 0.8V, IV =15mA, IP = 10uA.
5. Sketch the output voltage (VR2) in figure 3.

Figure 3 Figure 4
6. To what value must the variable resistor R be adjusted in figure 4 in order to turn the
SCR off? Assume IH = 10 mA and VAK = 0.7V.

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