Part – A

Unit I
1. Mention the important characteristics which must be specified for a power supply.
• Required output dc voltage
• The PIV of each diode
• Average and peak currents in each diode
• The ripple factor.

2. Compare Ripple Factor for half wave rectifier and full wave rectifier.

• Ripple factor (HWR)=1.22

• Ripple factor (FWR)=0.48

3. Outline the advantages of bridge rectifier

PIV rating required for the diodes in a bridge rectifier is only half of that for a
center tapped full-wave rectifier.
• It has high TUF 0.812
• It has high efficiency 81%
• It has low ripple factor 0.48

4. How surge current exhibits in rectifier and also suggest the method for compensate it.
The forward resistance of diodes is very small hence a large current flow through the two
diodes D1 and D2 instantaneously, this is called surge current.

Limiting surge current

• To limit the surge current, a surge limiting resistor Rs value is selected smaller
than RL

5. Distinguish between capacitor and inductor filter

Capacitor filter allows A.C signal and blocks D.C signal to the load
Inductor filter allows the D.C signal to pass through it. But it blocks A.C signal

6. List out the advantages of SMPS

• It is used for A.C to D.C conversion.
• The system is highly reliable, efficient, noiseless and compact because the switching is
done at very high rate ( 10 to 100 KHz )

7. For a particular regulator the output voltage on no load is observed as 10V while the full
load output voltage is observed as 9.8V. Find its regulation.
8. Outline the working of CLC filter.
• The rectifier output is given to C1, it allows a.c signal and blocks d.c signal
• The d.c signal reaches choke L, it allows to reach C2.
• C2 allows to pass remaining a.c component and almost pure d.c component
reaches to load

Unit II
1. Define h parameters?
H parameters (hybrid parameters) are defined as measurements that describe the
relationship between voltage and current in two-port networks using Z and Y parameters.

2. List the different types of biasing circuits.

Different types of bias are as follows
Fixed bias
Voltage divider bias
Collector feedback biasing

3. Justify the preference for the CE configuration in low-frequency amplifier designs

CE configuration is best for amplification because of its high power gain (due to its both
high voltage and current gain) and hence most widely used.

4. Mention the factors to be considered to design a biasing circuit?

• Change in temperature (Change in ICO,β,VBE)
• Change in manufacturing tolerance

5. List out the Bias compensation techniques in BJT amplifier

• Diode Compensation
• Thermistor Compensation
• Sensistor Compensation

6. Compare JFET with MOSFET

7. Define Channel length modulation.

The channel length modulation can be defined as the change or reduction in length of the
channel (L) due to increase in the drain to source voltage (VDS) in the saturation region.

8. Explain why the operating point is chosen at the center of the active region.
 Q-point selected at the center of the d.c load line to prevent any possible distortion in the
amplified output signal.

Part – B
A crystal diode having internal resistance Rf = 20Ω is used for half-wave rectification. If the
applied voltage v = 50 sin ω t and load resistance RL= 800 Ω, find: (i) Im, Idc, Irms (ii) a.c. power
input and d.c. power output (iii) d.c.output voltage (iv) efficiency of rectification.

Derive the expression for the Average DC load current (IDC), Average DC load Voltage (EDC),
RMS Load Current (IRMS), DC power output (PDC), AC power input (PAC) and Rectifier
Efficiency of full wave rectifier circuit.

2
  =  (or)  = 

Design a voltage regulator using Zener diode to meet the following specifications: Unregulated
Input Voltage = 20-30 V, Regulated output Voltage = 10 V, Load Current = 0-10 mA, IZmin = 2 mA,
IZmax = 50 mA, Draw the circuit with components value

4 Sketch the block diagram of switched mode power supply and explain the operation.
 Identify the circuit that used to maintain the output voltage at a constant value despite the variation
in load current or input voltage? Explain one such circuit that operate in switching mode with neat
block diagram.

5
 Illustrate with an example the design principles of obtaining a circuit which converts an
unregulated AC power supply to constant DC voltage.

Classify the different types of voltage regulator and explain any one type voltage regulator with a
7
neat diagram.
 Derive the Expression for the rectification efficiency, ripple factor, transformer utilization factor,
8
form factor and peak factor of Bridge rectifier.
 Unit – II
1 Determine the IB, VC and VCE for the circuit shown below.
 Analyze the stability factor S and derive a general expression for stability factor of
2 a circuit in CE configuration and show that the stability factor for a fixed bias circuit is (1+ β).
 For a Circuit Shown in figure ,VCC= 20 V,RC= 2KΩ,β= 50,VBE= 0.2 V,R1= 100KΩ,R2= 5KΩ and
3 RE= 100Ω.Calculate IB,VCE , and IC
 With neat circuit diagram, compare the different biasing circuit in terms of stability provided,
4 feedback and applications.
 For the circuit shown below , Calculate IB, IC, VCE, VB, VC and VBC assume VBE = 0.7 V and  =
50

6 Explain the working voltage divider bias of a transistor with the help of neat circuit diagram.
 Design collector to base bias circuit for the specified condition VCC = 15V, VCE = 5 V, IC= 5mA
7
and  =100
 i) Describe with suitable sketches the operation and characteristics of the N-channel
Enhancement type MOSFET.

Working of N-Channel MOSFET Enhancement Mode.

The same MOSFET can be worked in enhancement mode, if we can change the polarities of the
voltage VGG. So, let us consider the MOSFET with gate source voltage VGG being positive as
shown in the following figure

When no voltage is applied between gate and source, some current flows due to the voltage
between drain and source. Let some positive voltage is applied at VGG. Then the minority carriers
i.e. holes, get repelled and the majority carriers i.e. electrons gets attracted towards the SiO2 layer.
With some amount of positive potential at VGG a certain amount of drain current ID flows through
source to drain. When this positive potential is further increased, the current ID increases due to
the flow of electrons from source and these are pushed further due to the voltage applied at VGG.
Hence the more positive the applied VGG, the more the value of drain current ID will be. The
current flow gets enhanced due to the increase in electron flow better than in depletion mode.
Hence this mode is termed as Enhanced Mode MOSFET

Drain Characteristics

The drain characteristics of a MOSFET are drawn between the drain current ID and the drain
source voltage VDS. The characteristic curve is as shown below for different values of inputs

Actually when VDS is increased, the drain current ID should increase, but due to the applied VGS,
the drain current is controlled at certain level. Hence the gate current controls the output drain
current.

Transfer Characteristics

Transfer characteristics define the change in the value of VDS with the change in ID and VGS in
both depletion and enhancement modes. The below transfer characteristic curve is drawn for
drain current versus gate to source voltage.

ii) Differentiate N- Channel and P- Channel MOSFET

1. The P-channel enhancement MOSFET is very popular because it is much easier and cheaper to
produce than the N-channel device.
2. The hole mobility is nearly 2.5 times lower than the electron mobility. Thus, a P-channel MOSFET
occupies a larger area than an N-channel MOSFET having the same ID rating.
3. The drain resistance of P-channel MOSFET is three times higher than that for an identical
N-channel MOSFET.
4. The N-channel MOSFET has the higher packing density which makes it faster in switching appli
cations due to the smaller junction areas and lower inherent capacitances.

Part – C
Unit – I
 A Full wave rectifier a signal of 300v at 50 Hz is applied at the input. Each diode has an internal
resistance of 800Ω. If the load is 2000Ω, calculate i) Instant peak value of current in the output ii)
Output DC current iii) Efficiency of power transfer

1
 Explain how the pulse width modulation is applied in Switched mode Power supply?
Pulse Width Modulation (PWM) is a key control technique used in Switched Mode Power
Supplies (SMPS) to regulate the output voltage and current efficiently. The principle of PWM
involves varying the duty cycle of a high-frequency switching signal to control the amount of
power delivered to the load.
How PWM Works in SMPS:
1. High-Frequency Switching:
o A power transistor (MOSFET or IGBT) switches ON and OFF rapidly (typically
in the kHz to MHz range).
o This converts the input DC voltage into a pulsed waveform.
2. Duty Cycle Control:
2
o The duty cycle (D) is defined as the ratio of the ON time to the total switching
period (T)
D = Ton/T x 100
By increasing the ON time, more power is delivered; decreasing the ON time
reduces power delivery.
Filtering & Regulation:
• The pulsed waveform is passed through an inductor and capacitor filter to convert it
back into a smooth DC voltage.
• A feedback control circuit (typically using an error amplifier and PWM controller) adjusts
the duty cycle dynamically to maintain a stable output voltage.

Unit – II

Relate the various methods of biasing using BJT in terms of their stability factors.
Explain below topics
-Fixed Bias
-Stability factor
-Collector-to-Base Bias
1
-Stability factor
-Voltage Divider Bias (Self-Bias)
-Stability factor
-Mention their advantages and disadvantages of all the bias.

Explain in detail about various methods of biasing MOSFET.

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) biasing is crucial to set a
stable operating point (Q-point) in analog circuits, ensuring proper amplification or switching
behaviour. Unlike BJTs, MOSFETs are voltage-driven devices, meaning their operation
depends on gate-to-source voltage (VGSV_{GS}VGS) rather than current.
2 Explain Circuit Configuration and principle of operation for below topics
Fixed Biasing
Self-Bias
Voltage-Divider Bias
Explain Circuit Configuration and principle of operation