System Solution Guide

Battery Energy Storage System

Updated: JAN-2024

Industry Energy Infrastructure – Battery Energy Storage System

Application ESS (Energy storage system) plays a crucial role in building a low-carbon world and is currently
one of the most flourishing industrial applications. The reasons behind include the positive
policies led by decarbonization goals in various countries, the needs for storage and control of
renewable energy like solar power during the rapid development of new energy applications,
and the continuous reduction in the cost of Li-ion batteries.
Energy storage system has so close relationship with solar system and EV charging stations in
terms of application that they are also sharing similarities in hardware design and component
selection. This guide provides a comprehensive introduction to the energy storage system and
its market, as well as the industry-leading products and solutions offered by onsemi.

System Purpose
ESS is an application that has been studied extensively. It stores the energy (electricity) from different power
generation elements (coal, nuclear, wind, solar, etc.) in a variety of forms like electrochemical storage
(battery), mechanical storage (compressed air), thermal storage (molten salt), etc. In this guide, battery
energy storage system connected with the solar inverter system will be targeted.
BESS (Battery Energy Storage System) is widely employed in both residential and commercial cases. In
residential applications, a BESS serves as a backup power supply, preventing unexpected power outages and
contributing to cost saving by shifting electrical energy from low-value to high-value periods. In commercial
applications, which involve larger systems, BESS can efficiently store and manage the free and clean energy
produced by solar inverter, achieving low-carbon emissions. Another key attribute of BESS today is its ability
to reduce the grid pressure caused by growing demands of EV charging.
Lithium-ion battery, which is known as the major part of electrochemical storage system, has high
power/energy density, high roundtrip efficiency, compact footprint, and flexibility for expansion. The Li-ion
battery is a relatively mature technology that has benefited from more than three decades of commercial
development, which makes it a reliable and low-cost solution. It can be regarded that the continuous cost-
down of Li-ion battery has strongly accelerated the development of energy storage.

Market Information & Trends

Growing Demands of BESS

According to World Energy Outlook
2023, in the Stated Policies Scenario,
the total capacity of battery storage
will grow from 45 TWh in 2022 to
552 TWh in 2030, at a CAGR of 37%.
On the other hand, the price of
lithium-ion battery cell has dropped
to a record low of 107 USD/kWh,
decreased by about 80% compared
to 2013 (535 USD/kWh) based on the
data source from Bloomberg NEF,
which largely drives the BESS
market. And don’t ignore the positive
influence by renewable energy, over
800 GW of new solar infrastructures
are going to be deployed in 2030,
forecasted by IEA.

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Higher Power and Voltage

High-power charger is typically used in commercial cases, BESS is usually paired with solar inverter system.
Currently, 1500 V-rated solar inverters have entered mass production and are in use. Therefore, the DC
voltage of PCS (Power Conversion System) also needs to be increased to the same level. High voltage is a
clear trend in high-power conversion applications like solar inverter and DC EV charger, as high voltage
brings lower current (at the same output power), reduces system losses and cable diameter. However, high-
voltage system also challenges the components. In a 1500 V system, generally 1200 V rated power devices in
a multi-level circuit configuration, or 2000 V rated SiC MOSFETs in a two-level topology are preferred.
Additionally, safety and EMI issues lead by higher voltage and higher power need to be carefully considered.

Distributed System and Intelligent System

The new generation of distributed BESS can address the shortcomings of centralized systems. When multiple
battery packs are connected in parallel, it’s relatively easy to cause imbalance among them, leading to the
overuse of certain batteries over time and ultimately affecting the overall performance of the battery systems.
In contrast, distributed system enables decentralized management of subsystems, making maintenance
easier and enhancing system lifespan, thereby improving the battery charging cycles. Similarly, solar inverter
system also shares these characteristics and trends.
EMS, which stands for Energy Management System, is the command center responsible for controlling and
decision-making, and concurrently monitors system faults during operation, making it a crucial component in
BESS. The content involved in the EMS of commercial BESS is complex, requiring real-time data collection
and control. It involves controlling each node based on different strategies and commands from the grid
dispatch center, such as peak shaving and valley filling, solar system engagement, etc. Soon, big data
analysis will be integrated to predict operational conditions, reduce manual management, and maximize
efficiency.

Figure 1: Centralized and Distributed BESS Solution

Ecosystem Integrating BESS and Solar Inverter System

The expansion of DC charging stations poses challenges to the local power grid. Potential issues include the
impact on the grid when a large number of charging devices operate simultaneously, harmonic pollution to
the grid caused by low power factor equipment or equipment in a no-load state, and limitations imposed by
the capacity of local electrical transformers. Connecting solar inverter systems and BESS becomes essential
in commercial cases. Solar inverters can share a portion of the electrical load with the grid, while BESS, which
is more crucial, can reduce the impact on the grid, realize energy arbitrage, and decrease user costs.
Residential BESS can also contribute to the peak demand reduction, leading to cost saving for the family. As
another feature, residential BESS can act as a backup power supply, providing emergency power in case of
grid failure.

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SystemTool
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Four Elements to Build BESS
A BESS is made up of 4 parts, not only for commercial type, but for residential type. Battery packs consist of
battery cells to establish a commercial level system, and high-voltage modules are integrated into racks or
banks for higher capacity. Usually charging and discharging voltage ranging from 50 V to 1100 V is
dependent on the battery voltage and circuit topology. BMS (Battery Management System) is an electronic
system managing rechargeable batteries by ensuring batteries are operating in SOA (Safe Operating Area),
monitoring operating states, calculating and reporting real-time data, etc. to realize a longer operational life.
PCS is another important sub-system for bidirectional conversion of electrical energy connected between the
battery pack and the grid and/or load. It determines largely the system cost, size and performance. EMS, as
explained just now, is a software-based system of computer-aided tools used by operators of electric utility
grids to monitor, control, and optimize the performance of the generation or transmission system.

AC-coupled System and DC-coupled System

BESS is currently segmented into 2 types, AC-coupled and DC-coupled systems. AC-coupled BESS is a
separated system that can be added to existing solar/energy generation system/grid, making it an easy
upgrade. However, it requires additional power conversion stages to accomplish full charging/discharging,
leading to higher losses. On the other hand, DC-coupled system, commonly employed in residential hybrid
solar inverters, offer extra energy storage capacity by connecting to the DC bus. It involves single DC-DC
conversion step but requires a decision during product design, as DC bus voltage is often high and may pose
safety or retrofitting challenges.

Figure 2: AC-coupled System

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Figure 3: DC-coupled System

Bidirectional Operation
The power conversion stage of BESS requires a bidirectional operation. Commonly, three-phase inverters can
be bidirectional and behave as an AC-DC converter when operating in reverse mode, or reactive mode for
UPS or braking mode for motor drive. There is a significant point to highlight here, though. In general power
converters, and in particular topologies, are optimized for one use case and one direction of the power flow
through the selection and relative sizing of the switches and diodes. Three−phase inverters used as AC-DC
converters in PFC mode will not be as efficient as an optimized AC-DC PFC converter. Even DC-AC
topologies designed to be bidirectional will show better performance in one direction than the other. So, it is
important to bear in mind what will be the most common use case. Also, bidirectionality will not be achievable
with all topologies as we will see, so selecting the right one upfront is an important factor. Read AND90142 -
Demystifying Three-Phase Power Factor Correction Topologies to understand three-level technology and
featured three-level PFC circuits.

Use Silicon Carbide Products in PCS

Compared to IGBT, SiC device has more advantages in high-voltage and high-current applications, such as
enabling high-frequency switching. Although IGBT remains the preferred choice in BESS design, considering
different switching strategies, incorporating SiC devices in certain sections can yield superior performance.
For instance, in the bidirectional inverter using A-NPC, SiC devices may be selected in the inner legs to
reduce switching losses because of the dedicated switching strategy requiring high switching frequency of
inner switches, while the rest switches can still utilize low VCE(SAT) IGBTs to maintain controllable cost.

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System Block Diagram – AC Coupled Battery Energy Storage System

Find Interactive Block Diagram on the Web

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System Block Diagram – DC Coupled Battery Energy Storage System

Find Interactive Block Diagram on the Web

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Updated: JAN-2024

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GD Q1 Q5 Q9

C1

D1 GD Q2 D3 Q6 D5 Q10

L1
L2
Battery L3 AC Port

D2 GD Q3 D4 Q7 D6 Q11

C1

GD Q4 Q8 Q12

Figure 4: Three-phase I-NPC , Bidirectional Topology DC+

T1
D1
Three-phase I-NPC is a common bidirectional topology in
PCS to match the increasing bus voltage. Comparing to two-
level topologies like three-phase half bridge, I-NPC requires T2
more components and driving signals, complicated D5 D2
L1
switching scheme also challenge the designers. But the
N PHASE
advantages are distinct that it reduces the switching losses,
lower the current ripple, reduce EMI, etc. T3
D6 D3
NXH600N65L4Q2F2 is a high-performance 650 V IGBT PIM
containing an I-NPC inverter. It’s designed to endure high
NXH600N65L4Q2F2
currents from both directions, making it the best fit for T4
D4 Application Schematic
commercial PCS over 100 kW.
and Package
DC-

DESAT (Desaturation) is one of the important protections

preferred in high-power conversion. It can prevent the
IGBTs/MOSFETs from the damage occurred by short circuit
through shutting down the switches as fast as possible.
NCD57000 integrates a desaturation detecting function, when
VCESAT reaches the target, an internal STO(Soft Turn Off) MOSFET
is activated to discharge the gate capacitor in order to reduce the
over voltage stress and losses caused by high dV/dt.
What’s more, this single channel gate driver has a high source/sink
current (4 A/6 A), 5 kVrms galvanic isolation, and other protection
functions like UVLO, active miller clamp, etc.

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D2
Primary Side PWM QR Controller
T1
NCP1362, SOIC-8 R1 C1
C2 Vout

D1
Usually, the auxiliary power supplies are designed Vbus
based on a flyback topology using a primary-side-
Flyback Q1
regulated, QR (quasi-resonant) flyback controller. Controller

NCP1362 is a primary side PWM controller for low

power offline SMPS. The biggest advantages of using
NCP1362 is that it requires no optocoupled feedback, Figure 5: Example Schematic based on
improving the reliability of power supply. Additionally, NCP1362 flyback controller (above)
it turns off the switch at low VDS to improve efficiency Evaluation Board with NCP1362 (below)
and save heat generation.

• Primary side QR flyback controller

• No secondary feedback circuitry is
required
• Valley lockout QR peak current
mode control
• Optimized light load efficiency and
stand-by performance Learn more about NCP1362 with 40W auxiliary PSU
reference design - SECO-HVDCDC1362-40W-GEVB

Ethernet interface in BESS

Distributed energy storage system is likely comprised of hundreds of PCS and
control units. Modern command center must adapt more sophisticated
connectivity solutions to meet the increasing demands of nodes and
computing. the NCN26010 from onsemi is one of the first 802.3cg compliant
controllers available on the market. It offers benefits like
• Good noise immunity which exceeds the noise immunity levels in IEEE
802.3cg to enable 50+ meters of range.
• Up to 70% fewer cables and up to 80% lower installation costs
• Lower software maintenance costs

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EliteSiC, 1200 V MOSFET, M3S

• New Family of 1200 V M3S Planar SiC MOSFET

• Optimized for high temperature operation
• Improved parasitic cap for high-frequency operation
• RDS(ON)=22 mΩ @VGS=18 V*
• Ultra low gate charge (QG(TOT))=137 nC* Figure 6: Package variants of M3S MOSFET family
• High speed switching with low cap. (COSS=146 pF)* TO-247-3LD (left) , TO-247-4LD (middle),
• 4-pin package with Kelvin Source* D2PAK-7L (right)

Learn more about M3 family - AND90204 - onsemi Figure 7: Chart Comparison of EOSS parameter
EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
*Key characteristics of NTH4L022N120M3S.

Table 1: Comparison of EOSS parameter between

M3S, M1 MOSFET families and Competitor A

EOSS [uJ] FOM [Ω*uJ]

at 0-600V RDS(on)*EOSS

onsemi M1 20mΩ 63 1.38

onsemi M3S 22mΩ 36 0.77

Competitor A 21mΩ 45 0.86

Field Stop VII, IGBT, 1200 V

• New Family of 1200 V Trench Field Stop VII IGBT

• Trench narrow mesa & Proton implant multiple buffer
• Fast switching type and low VCE(SAT) type available DC+
• Improved parasitic cap for high-frequency operation T1
D1
• Common packages
• Target applications - Energy infrastructure, Factory
Automation
T2
D5 D2
IGBT Power Integrated Modules (PIM), I-NPC L1
N PHASE

• Application recommended IGBT PIM , I-NPC T3

D6 D3
• 650 V / 1000 V IGBT, Diode inside
• High Operating Current NXH450N65L4Q2F2S1G
• Internal NTC thermistor T4 Application Schematic
• Low Inductive Layout D4 and Package
• Improved efficiency or higher power density
• Extreme Efficient Trench with Field Stop Tech DC-

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System Solution Guide
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Solution Overview

How to Choose a Gate Driver

Current driving capability. The fact of turn-on and turn-off of a switch is the discharging and charging
process of the input and output capacitors. Higher sink and source current capability means quicker turn-on
and turn-off, and eventually, smaller switching losses.
Fault detection. A gate driver is not only used to drive switches but protect switches and even the entire
system. For example, UVLO (under voltage lock out) ensures the power supply of gate driver is in a good
condition, DESAT (Desaturation) is used to detect the short circuit and active miller clamp is to prevent false
turn on especially in a quick switching system. Read AND9949 – NCD(V)57000/57001 Gate Driver Design
Note to learn the protecting functions.
Immunity. CMTI (Common Mode Transient Immunity) determines if this product can be used in a quick-
switching system, it is defined as the maximum tolerable rate of the rise or fall of the common-mode voltage
applied between the input and output circuit in a gate driver. High power system is operating at very quick
changing rate which generates very large voltage transient, for example, >100 V/ns. The isolated gate driver
needs to be able to withstand CMTI above the rated level to prevent noise on the low-voltage circuitry side,
and to prevent failure of the isolation barrier.
Propagation delay. Propagation delay is defined as the time delay from 10% of the input to 90% of the output
(might be different among suppliers), this delay affects the timing of the switching between devices, which is
critical in high-frequency applications. Dead time is set to avoid shoot-through and further damage, the less
dead time is set, the less switching loss you will have.
Compatibility. A pin-to-pin replacement is always preferred in a new project if there’s no significant design
change. Choosing a gate driver with similar specifications and package is benefit for a quick design.
Of course, not every point needs to be followed. For example, unlike IGBT, the output characteristic of SiC
MOSFET behaves more like a variable resistance and there’s no saturation region, which means the normal
desaturation detecting principle doesn’t work. As one of the solution, a current sensor is usually used to
detect overcurrent, or a temperature sensor for abnormal temperature.

NCP51561 NCD57080 / NCD57090 NCD57100

Dual Channel Single Channel Single Channel
Isolated Gate Driver Isolated Gate Driver Isolated Gate Driver

• 4.5A / 9A Source/Sink • 6.5 A Source/Sink • 7 A Source/Sink Peak Current

Peak Current Peak Current • UVLO and DESAT Protection
• Typical 36 ns propagation • Available with Split Output • Wide Bias Voltage Range
delay with 5ns max delay Active Miller Clamp or including Negative VEE
matching Negative Bias versions • 3.3 V, 5V and 15 V Logic Input
• Single or Dual Input Modes • 3.3 V, 5 V and 15 V Logic Input • 3.5 kV galvanic isolation,
via ANB • 3.5 kV galvanic isolation, CMTI ≥ 100 kV/μs
• 5 kV galvanic isolation, CMTI ≥ 100 kV/μs • SOIC-16WB with 8mm
CMTI ≥ 200 kV/μs • SOIC-8 with 4mm creepage creepage distance
• SOIC-16WB with 8mm distance (NCD57080)
creepage distance • SOIC-8WB with 8mm creepage
distance (NCD57090)

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Common Topologies in Bidirectional AC-DC

Three-Phase, Full Bridge Converter

Q1 Q3 Q5
• Simple circuit, easy control, few components L1

• Switches need to endure full bus voltage and

L2
spikes VAC C VDC
• Requires high-capacity transformer, increase cost L3

and end-system size

Q2 Q4 Q6
• Wide bandgap components is preferred to reduce
THD, inductor size

Single/Three-Phase, Totem Pole Converter

• Improved efficiency, EMI, THD, and reduced
Q1 Q3
quantity of switches which are conducted per
cycle L

• High power density due to low quantity of

VAC C VDC
switches
• Wide bandgap components are required to reduce
recovery losses Q2 Q4
• Zero crossing point noise, common mode noise

Three-Phase, Three-level Converters

• Reduced THD and voltage stress on (some)
switches as a three-level configuration
• More gate drivers and more complicated control
• Better efficiency, higher cost
• Proven configuration in solar inverter designs
C1 Q1 Q3 Q5

Q1 Q2 Q3 D1 Q2 D2 Q4 D3 Q6
C1
L1 L1

L2
Q4 Q5 VDC VAC
L2 L3

VDC VAC
Q6 Q7
L3 D4 Q7 D5 Q9 D6 Q11

Q8 Q9
C2
Q10 Q11 Q12 C2 Q8 Q10 Q12

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Common Topologies in Bidirectional DC-DC

Q1 Buck-Boost Converter
L • Expand charging/discharging voltage range to
VDC improve battery usage
• Realize bidirectional power conversion when
Q2 C VDC charging/discharging
• Few components and easy control
• Optional according to battery voltage

Dual Active Bridge Converter

• Run phase-shift modulation To realize ZVS at high
loads
• Unexpected loss caused by mismatch of current in
Q1 Q3 Q5 Q7 both stage
L1 • Complicated design regarding phase shift,
VDC VDC transformer, frequency, etc. to reach expected
T1
efficiency
Q2 Q4 Q6 Q8 • Wide bandgap components are preferred in such
high-frequency/high voltage operation
• Reduced output current ripple to reduce size of
output capacitor, preferred in high-power cases
• Isolated conversion to ensure safety

CLLC Resonant Converter

• One additional capacitor added to realize
bidirectional conversion based on LLC
Q1 Q3 Q5 Q7
C1 L1 L2 C2
• Complicated frequency modulation and passive
VDC VDC
selection to reach high efficiency in both directions
T1
• Need extra DC-DC conversion to reach wide
Q2 Q4 Q6 Q8 output range to ensure good efficiency
• Better efficiency than DAB during entire load range
• Isolated conversion to ensure safety

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System Solution Guide
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Recommended Products

Suggested
Part Number Description
Block
AC-Coupled & DC-Coupled BESS - Power Conversion Stage
NTH4L028N170M1 Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mΩ, 1700 V, M1, TO-247-4L
NTH4L014N120M3P Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mΩ, 1200 V, M3P, TO-247-4L
NTHL022N120M3S Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mΩ, 1200 V, M3S, TO-247-3L
NTH4L040N120M3S Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mΩ, 1200 V, M3S, TO-247-4L
NTBG070N120M3S Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mΩ, 1200 V, M3S, D2PAK-7L
NTBG020N090SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mΩ, 900 V, M2, D2PAK-7L
NTBG015N065SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mΩ, 650 V, M2, D2PAK-7L
NTBL045N065SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mΩ, 650 V, M2, TOLL
NTH4L015N065SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mΩ, 650 V, M2, TO-247-4L
NTHL075N065SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mΩ, 650 V, M2, TO-247-3L
Application Recommended SiC MOSFET
NDSH25170A Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A,1700 V,D1,TO-247-2L
FFSH10120A Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V,D1,TO-247-2L
FFSB20120A Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V,D1,D2PAK-2L
FFSH30120ADN Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A,1200 V,D1,TO-247-3L
Bidirectional
AC-DC & FFSH40120ADN Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A,1200 V,D1,TO-247-3L
Bidirectional NDSH50120C Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A,1200 V,D3,TO-247-2L
DC-DC
FFSD0665B Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, DPAK
FFSP0665B Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, TO-220-2L
FFSB0665B Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L
FFSB1065B Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, D2PAK-2L
Application Recommended SiC Diode
FGHL40T120RWD 1200 V 40 A FS7 IGBT, Low Vce(sat), TO-247-3L
FGHL60T120RWD 1200 V 60 A FS7 IGBT, Low Vce(sat), TO-247-3L
FGHL40T120SWD 1200 V 60 A FS7 IGBT, Fast Switching, TO-247-3L
FGY140T120SWD 1200 V 140 A FS7 IGBT, Fast Switching, TO-247-3L
FGY75T120SWD 1200 V 75 A FS7 IGBT, Fast Switching, TO-247-3L
FGHL50T65LQDT 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode, TO-247-3
FGHL50T65LQDTL4 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode, TO-247-4
FGH4L50T65SQD 650 V 50 A FS4 high speed IGBT with copack diode, TO-247-4L
FGH4L50T65MQDC50 650 V 50 A FS4 high speed IGBT with SiC diode, TO-247-4L
Application Recommended IGBT Discrete

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Recommended Products

Suggested
Part Number Description
Block
NXH006P120MNF2 Full SiC PIM, EliteSiC, Half Bridge, 1200 V, 6 mΩ, M1
NXH010P120MNF1 Full SiC PIM, EliteSiC, Half Bridge, 1200 V, 10 mΩ, M1
NXH004P120M3F2 Full SiC PIM, EliteSiC, Half Bridge, 1200 V, 4 mΩ, M3S
NXH003P120M3F2 Full SiC PIM, EliteSiC, Half Bridge, 1200 V, 3 mΩ, M3S
NXH400N100L4Q2F2 IGBT PIM, I-Type NPC, 1000 V, 200 A IGBT, 1000 V, 75 A Diode
NXH600N65L4Q2F2 IGBT PIM, I-Type NPC, 650 V, 600 A IGBT, 650 V, 300 A Diode
Bidirectional Application Recommended PIM for Bidirectional AC-DC & DC-DC Stages
AC-DC &
NTBLS0D8N08X Power MOSFET, N-Channel, 80 V, 457 A, 0.79 mΩ, TOLL
Bidirectional
DC-DC NTBLS1D5N10MC Power MOSFET, N-Channel, 100 V, 312 A, 1.53 mΩ, TOLL
NTBLS1D7N10MC Power MOSFET, N-Channel, 100 V, 272 A, 1.8 mΩ, TOLL
NTMFWS1D5N08X Power MOSFET, N-Channel, STD Gate, SO8FL-HEFET,80V,1.43 mΩ,253 A
NTBGS004N10G Power MOSFET, N-Channel, 203 A, 100V, D2PAK-7L
NTMFS3D2N10MD N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 142 A, 3.2 mΩ
NTMFS7D5N15MC N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 95.6 A, 7.9 mΩ
Application Recommended MOSFET for Optional Bidirectional DC-DC Stage

Rest Common Parts

NCD57080
Gate Driver, Isolated Single Channel IGBT/MOSFET Driver ±6.5 A
NCD57090
NCP51752 Gate Driver, Isolated Single Channel Driver, 4.5 A/9 A, Neg. Bias Control
Isolated Gate NCD57252 Gate Driver, Isolated Dual Channel IGBT Gate Driver
Driver
NCD57100 Gate Driver, Isolated Single Channel IGBT Gare Driver ±7A
NCP51561 Gate Driver, Isolated Dual Channel Gate Driver for SiC, 4.5 A/9 A
Application Recommended Gate Driver
FSL336LR 650V Integrated Power Switch with Error Amp and no bias winding
NCP11184 800V Switcher, Enhanced Standby Mode 2.25 Ω
NCP1076 700V Integrated Power Switch, 4.8 Ω
Application Recommended Offline Regulator

Power NCP189 LDO, 500 mA, Low noise, High PSRR, Low VDO
Management NCP718 LDO Regulator, 300 mA, Wide Vin, Ultra-Low Iq
NCP730 LDO Regulator, 150 mA, 38 V, 1 uA IQ, with PG
NCP731 LDO Regulator, 150 mA, 38 V, 8 µVrms with Enable and external Soft Start.
NCP164 LDO Regulator, 300 mA, Ultra-Low Noise, High PSRR with Power Good
Application Recommended LDO
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Recommended Products

Suggested
Part Number Description
Block
NCP1251 PWM Controller, Current Mode for Offline Power Suppliers
NCP1362 Quasi-Resonant Flyback Controller with Valley Lock-out Switching
NCP1680 Totem-Pole PFC Controller, CrM
NCP1568 AC-DC Active Clamp Flyback PWM Controller
NCP13992 Current Mode Resonant Controller
Application Recommended Offline Controller
NUP2105 27 V ESD Protection Diode - Dual Line CAN Bus Protector
NUP3105L 32 V Dual Line CAN Bus Protector in SOT-23
Power
ESDM2032MX 3.3 V Bidirectional ESD and Surge Protection Diode
Management
ESDM3032MX 3.3 V Bidirectional Micro−Packaged ESD Protection Diode
Application Recommended ESD Protection Diode
NCID9 series High Speed Dual/3ch/Quad Digital Isolator
NIS3071 Electronic fuse (eFuse) 4-channel, 8 V to 60 V, 10 A in 5x6mm package
MM5Z series 500 mW Tight Tolerance Zener Diode Voltage Regulator
NTBG1000N170M1 Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mΩ, 1700 V, M1, D2PAK-7L
NTHL1000N170M1 Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mΩ, 1700 V, M1, TO-247-3L
Application Recommended Zener Diode and others
NCS21 series Current Sense Amplifier, 26 V, Low-/High-Side Voltage Out
NCS2007 series Operational Amplifier, Wide Supply Range, 3 MHz CMOS
LM393 Comparator, Dual, Low Offset Voltage
Signal Cond. &
Application Recommended Amplifier & Comparator
Control
NCD98010 12-Bit Low Power SAR ADC Unsigned Output
NCD98011 12-Bit Low Power SAR ADC Signed Output
Application Recommended ADC
CAT24M01 EEPROM Serial 1 MB I2C
CAT24C64 EEPROM Serial 64 kb I2C

Logic & Application Recommended EEPROM

Memory MC74AC00 Quad 2-Input NAND Gate
74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs
Application Recommended Logic Gate
NCN26010 Ethernet Controller,10 Mb/s,Single-Pair, MAC+PHY, 802.3cg, 10BASE−T1S
Interface NCV7340 CAN Transceiver, High Speed, Low Power
Application Recommended Interface Components

Page 15 Public Information BRD8208/D

System Solution Guide
Battery Energy Storage System
Updated: JAN-2024

Development Tools & Resources

Product Recommendation
Tools+
Product Recommendations or Database of
Products by onsemi

Find Products

WebDesigner+ Simulation SPICE models

Utilize WebDesigner+ to design a power Simulation SPICE Models Files for onsemi
supply tailored to your specific requirements. Products

Generate & Optimize Search & Download

Interactive Block Diagrams Evaluation and Development

Tools
Block Diagrams of onsemi Solutions and Their Evaluation or Development Boards Database by
BOM Worksheets onsemi

Explore Diagrams Find & Order

Self-Service PLECS Model

Elite Power Simulator
Generator
Perform simulations for our EliteSiC and
FieldStop7 IGBT product line using appropriate Increase Accuracy with Customization and
engineering tools and software. Improve Circuit Performance

Simulate Now Generate PLECS Model

Page 16 Public Information BRD8208/D

System Solution Guide
Battery Energy Storage System
Updated: JAN-2024

Technical Documents

Type Description & Link

Application Note AND90204 – onsemi EliteSiC Gen2 1200V SiC MOSFET M3S Series

Whitepaper TND6396 – Silicon Carbide – From Challenging Material to Robust Reliability

TND6260 - Physically Based, Scalable SPICE Modeling Methodologies for Modern

Whitepaper
Power Electronic Devices
Application Note AN1040 – Mounting Considerations for Power Semiconductors
TND6330 - Using Physical and Scalable Simulation Models to Evaluate Parameters and
Whitepaper
Application Results

AND90103 – onsemi M1 1200V SiC MOSFETs & Modules: Characteristics and Driving
Application Note
Recommendations

Application Note AND9949 – NCD(V)57000/1 Gate Driver Design Note

Whitepaper TND6237 – SiC MOSFETs: Gate Drive Optimization

Application Note AND90190 – Practical Design Guidelines on the Usage of an Isolated Gate Driver

AND9674 – Design and Application Guide of Bootstrap Circuit for High-Voltage Gate-
Application Note
Drive IC

AND90004 – Analysis of Power Dissipation and Thermal Considerations for High

Application Note
Voltage Gate Drivers

Application Note AND90061 – Half-Bridge LLC Resonant Converter Design Using NCP4390/NCV4390

Application Note AND9925 – FAN9672/3 Tips and Tricks

AND8273 – Design of a 100W ACF DC-DC Converter for Telecom System Using
Application Note
NCP1262

Application Note AND9750 – Current Sense Amplifiers, FAQ

Brochure BRD8092 – Energy Storage System Solutions

Video Video – Buck-Boost Topology Overview

Video Video – Understanding Single Pulse Avalanche Rating in Silicon Carbide MOSFETs

Page 17 Public Information BRD8208/D

System Solution Guide
Battery Energy Storage System
Updated: JAN-2024

Technical Documents

Type Description & Link

Video – Introducing New Next-Generation 1200 V EliteSiC Half Bridge Power Integrated
Video
Modules (PIMs) M3S Technology

Ref Design
25kW DC EV Charger (For reference only)
(Evaluation Board)

Ref Design
15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications
(Evaluation Board)
Ref Design
40 W SiC high-voltage auxiliary power supply for HEV & BEV applications
(Evaluation Board)

Ref Design 6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified
(Evaluation Board) NCV3064 Controller Evaluation Board

Ref Design 6-18 Vdc Input Isolated IGBT Gate Driver Supply +15V/-7.5V/7.5V with Automotive
(Evaluation Board) Qualified NCV3064 Controller

Page 18 Public Information BRD8208/D

System Solution Guide
Battery Energy Storage System
Updated: JAN-2024

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