Lecture 2

Field Effect Transistors

(FETs)
Presented by : N. MAGHLAOUI.
Associate Professor.
Email : [email protected]
National Higher School of Advanced Technologies
1
 Lecture Overview
• Difference between BJT and FET.

• What is a FET transistors?

• JFET transistors : Advantages and disadvantages, applications,

construction, operation and characteristics.

• MOSFET transistors : Advantages and disadvantages, applications,

construction, operation and characteristics.
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 Difference between BJT & FET
BJT FET
• Three terminal semiconductor • Three terminal semiconductor
device. device
• Emitter, base, collector • Source, gate, drain
• Current controlled device • Voltage controlled device
• Bipolar device • Unipolar device
• Two types- npn & pnp • Two types – JFET & MOS FET

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 Field Effect Transistor FET
• FET is a three terminal semiconductor device. It is unipolar transistor i.e. depends
only on one type of charge carrier, either electron or hole.
• The current is controlled by the applied electric field hence, it is a voltage controlled
device.
• It have high input Impedances and Low output Impedance so they are used as
buffers at the front end of voltage and other measuring devices.
• It has small coupling capacitances, as a result, they are used in hearing aids.
• There are two types of FET – the JFET (Junction Field Effect Transistor) and MOSFET
(Metal Oxide Semiconductor Field Effect Transistor).

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 Advantages of JFET
Modern technology depends upon transistors for their wide range of advantages, which
are listed below:
• Stability: It offers good stability in various operating conditions.
• Low power consumption: it consumes little power, which makes it energy efficient.
• High impedance: JFETs have a high input impedance; these high input impedances can
be well suited for amplifier circuits.
• Simplicity: JFETs are relatively simple to use and do not require the complex biasing
arrangements often found in other transistors.
• No Gate Current: JFETs have no gate current flow, which simplifies circuit design in
applications where current flow must be avoided.

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 Disadvantages of JFET
Though transistors are widely used, they still face some drawbacks, which are listed
below:
• Unipolar Device: JFETs are unipolar devices, because the current flow can be controls
through the movement of only one type of charge carrier (either electrons or holes).
• Gate-Source Leakage: JFETs can exhibit gate-source leakage currents, which is required
in strict leakage current applications.
• Limited Availability: The availability is less, finding specific JFETs with specific
characteristics can be challenging
• Low gain: it has low gain as compared to other types of transistors and cannot be used
in high-gain applications.
• Cost: It is expensive, which can impact the overall cost of electronic devices.

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 Applications of JFET
• Low-Noise Amplifiers: JFETs are ideal for low-noise amplifier applications in high-
frequency signal processing, and audio circuits.
• High-Impedance Preamplifiers: JFETs are used in preamplifiers for high-impedance
sensors, such as piezoelectric accelerometers and certain types of microphones, to
maintain signal integrity.
• Switching Circuits: JFETs can be used as electronic switches in low-power and high-
frequency applications where fast switching is required, such as in RF switching circuits.

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 Applications of JFET
• Sample and Hold circuits: In sample-and-hold circuits, JFETs can sample the input signal
and hold its value until the next sampling period.
• Voltage Regulators: JFETs can also be used in voltage regulators to maintain stable
output.
• Oscillators: JFETs are important in making oscillators that create repeating waveforms.
They can also control the frequency, to generate stable waveforms.

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 JFET construction
• In an N-channel JFET, the material is of P-type, and the substrate is N-type, while in a
P channel JFET the material is of N-type, and the substrate used is p-type. JFET is
made of a long channel of semiconductor material. Ohmic contacts are provided at
each end of the semiconductor channels to form source and drain connections. A P-
type JFET contains many positive charges, and if the JFET contains a large number of
electrons, it is called an N-type JFET.
Drain Drain

n p
Gate Gate Gate Gate
p p n n

n p

Source Source
N Channel JFET P Channel JFET 9
Construction of N-channel JFET

Schematic symbols for JFETs.

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 JFET operation
• The Gate and channel constitute a PN junction diode which is reverse biased by
the gate to the source voltage.
• A depletion layer is developed in the channel as reverse bias increases the width
of depletion layer increases.
• For a fixed drain to source voltage, the drain current will be a function of reverse
bias voltage across the gate junction.
• At a gate-to-source voltage 𝑉𝐺𝑆 = 𝑉𝑃 known as the “Pinch- off” voltage which
eliminates the channel, the channel width is reduces to zero.
• The term Field Effect is used to describe this device because of mechanism to
control current using reverse bias voltage 𝑉𝐺𝑆 .

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 JFET operation
Drain Drain

n n
Gate Gate Gate Gate
p p p p

n n

Source Source

Saturation mode Pinch-off mode

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 JFET operation
• Let us understand the working of JFET by comparing it to a garden hose pipe. Water
flows smoothly through a garden hose pipe if there is no obstruction, but if we
squeeze the pipe slightly, the water flow slows down. This is precisely how a JFET
works. Here the hose is analogous to JFET, and the water flow is equivalent to a
current. By constructing the current carrying-channel according to our needs, we
could control the current flow.
• When no voltage is applied across the source and gate, the channel is a smooth path
for the electrons to flow through. When the polarity that makes the P-N junction
reverse biased is applied, the channel narrows by increasing the depletion layer and
could put the JFET in the cut-off or pinch-off region.

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 JFET operation
Drain Drain

n p
Gate + Gate −
p p 𝑽𝑫𝑫 n n 𝑽𝑫𝑫
− -
+ +
𝑽𝑮𝑮 n 𝑽𝑮𝑮 p
+ −

Source Source

N Channel JFET P Channel JFET

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 JFET operation
Drain Drain

𝒆-
n 𝒆-
Gate + Gate +
p 𝒆- p 𝑽𝑫𝑫 p n p 𝑽𝑫𝑫
- − -
𝑽𝑮𝑮
𝒆- 𝒆- 𝒆- + 𝒆-

Source Source

𝑉𝐺𝐺 = 0 𝑉 𝑉𝐺𝐺 < 0

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 JFET drain characteristics
• Plot between 𝑉𝐷𝑆 Versus 𝐼𝐷 for different 𝑰𝑫 𝑽𝑫𝑺 = 𝑽𝑮𝑺 − 𝑽𝑷
values of 𝑉𝐺𝑆 . Ohmic region Saturation region
𝑰𝑫𝑺𝑺 𝑽𝑮𝑺𝟎 = 𝟎 𝑽
• When 𝑉𝐺𝑆 = 0 𝑉 & 𝑉𝐷𝑆 is positive , 𝐼𝐷

Increasing reverse bias

increases linearly. 𝑽𝑮𝑺𝟏 < 𝑽𝑮𝑺𝟎

• When 𝑉𝐷𝑆 is more positive Voltage 𝐼𝐷 gets

𝑽𝑮𝑺𝟐 < 𝑽𝑮𝑺𝟏
saturated as 𝐼𝐷𝑆𝑆 .
• When 𝑉𝐺𝑆 = −𝑉𝑒 & 𝑉𝐷𝑆 positive Voltage 𝐼𝐷 𝑽𝑮𝑺𝟑 < 𝑽𝑮𝑺𝟐
current reduces from the previous value of 𝑽𝑮𝑺𝟒 < 𝑽𝑮𝑺𝟑
𝐼𝐷 . 𝟎 𝑽𝑷
𝑽𝑫𝑺

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 JFET transfer function
characteristics 𝑰𝑫

• The transfer characteristics can be determined Dynamic transconductance,

𝝏𝑰𝑫
by keeping the drain source voltage 𝒈𝒎 =
𝝏𝑽𝑮𝑺 𝑰𝑫𝑺𝑺
𝑉𝐷𝑆 constant, drain current 𝐼𝐷 is observed by
changing the gate source voltage. So it is
observed that when the gate source voltage Saturation
𝑉𝐺𝑆 is increased in the negative region the region

drain current 𝐼𝐷 decreases.

Channel off
Ohmic
region
𝑽𝑮𝑺
𝑽𝑮𝑺,𝒐𝒇𝒇 = 𝑽𝑷 𝟎

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 JFET transfer function
characteristics
𝑰𝑫
• The transfer characteristics can be expressed
analytically as given by : Dynamic transconductance,
𝝏𝑰𝑫
𝒈𝒎 = 𝑰𝑫𝑺𝑺
𝝏𝑽𝑮𝑺
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1 −
𝑉𝐺𝑆,𝑜𝑓𝑓
Saturation
region

• The transconductance is defined as :

Channel off
Ohmic
region
𝑽𝑮𝑺
𝜕𝐼𝐷 𝑽𝑮𝑺,𝒐𝒇𝒇 = 𝑽𝑷 𝟎
𝑔𝑚 =
𝜕𝑉𝐺𝑆
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 Questions
• Q1 : The JFET transistor 2N5486 has a gate current of 1 𝑛𝐴 when the reverse gate
voltage is 20 𝑉. Calculate the input resistance.

• Q2 : The transistor MPF4857 has a VP = 4 V and IDSS = 100 mA. Calculate the
resistance. What’s the cutoff voltage 𝑉𝐺𝑆,𝑜𝑓𝑓 ?

• Q3 : A transistor 2N5668 has a V𝐺𝑆,𝑜𝑓𝑓 = −4 V and IDSS = 5 mA. What’s the gate
voltage 𝑉𝐺𝑆 and the drain current at half of the cutoff voltage ?

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 MOSFET - Metal Oxide Silicon
Field Effect Transistors
• MOSFETs or Metal Oxide Silicon Field Effect Transistors, were invented to overcome the
disadvantages posed by FETs, such as the slow operation, high drain resistance, and
moderate input impedance.

• Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic
devices used to switch or amplify voltages in circuits. It is a voltage controlled device
and is constructed by three terminals. The terminals of MOSFET are named as follows:
Source, Gate, Drain, Body.

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 Advantages of MOSFET
• They can operated in either enhancement mode or depletion mode.

• They have higher much input impedance compare to JFET.

• They have high drain resistance due to lower resistance of channel.

• They are easy to manufacture.

• They support high speed of operation compare to JFET.

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 Disadvantages of MOSFET
• The layer between gate and channel is very fragile which is vulnerable to electro
static damage during installation.

• It requires well designed circuit to avoid the issue.

• MOSFET is very susceptible to overload voltage, hence special handling is

required during installation.

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 Applications of MOSFET
• MOSFET is used for switching or amplifying electronic signals in the electronic
devices.
• It is used as an inverter.
• It can be used in digital circuit.
• It can be used in high frequency amplifier.
• MOSFET can be used as a passive element (Resistor, Capacitor, Inductor).
• It can be used in brushless DC motor device.
• It can be used in electronic DC device.
• It can be used in switch mode power supply (SMPS).

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 Construction of MOSFET
• The p-type semiconductor forms the base of
the MOSFET.
Gate
• The two types of the base are highly doped Source Drain
with an n-type impurity which is marked as
n+ in the diagram. Oxide

• From the heavily doped regions of the base,

the terminals source and drain originate. n n
• The layer of the substrate is coated with a p
layer of silicon dioxide for insulation.

Body

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 MOSFET construction
• A thin insulated metallic plate is kept on top
Gate
of the silicon dioxide and it acts as a Source Drain
capacitor.
• The gate terminal is brought out from the
thin metallic plate.
• A DC circuit is then formed by connecting a n n
voltage source between these two n-type
p
regions.

Body

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 MOSFET Types
• The classification of MOSFET based on the construction and the material used is given
below in the flowchart.
• MOSFETs are of two classes: Enhancement mode and depletion mode. Each class is
available as n-channel or p-channel; hence overall they tally up to four types of
MOSFETs.
MOSFET

Enhancement Depletion
mode mode

P channel N channel P channel N channel

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 Depletion mode
• When No Voltage On The Gate, The Channel Shows Its Maximum Conductance. As The
Voltage On The Gate Is Either Positive Or Negative, The Channel Conductivity Decreases.

𝑰𝑫 D D
𝑰𝑫

𝑽𝑮𝑺 𝑽𝑫𝑺 𝑽𝑮𝑺 𝑽𝑫𝑺

G G
S S
P channel N channel

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 Enhancement mode
• When there is no voltage on the gate, the device doesn't conduct. More voltage on the
gate, the better the device can conduct.

D D
𝑰𝑫 𝑰𝑫

𝑽𝑮𝑺 𝑽𝑫𝑺 𝑽𝑮𝑺 𝑽𝑫𝑺

G G
S S
P channel N channel

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 Operating Regions of MOSFET
• In a MOS device, the current flows on formation of channel of carriers between source
and drain terminals. For this, voltage at gate terminal needs to be such that it attracts
carriers of appropriate type towards itself. When sufficient carriers are attracted towards
gate, channel is said to be formed. A current, then, flows between source and drain
terminals depending upon the voltage levels of these terminals. The voltage level of
substrate also impacts the magnitude of current as it also determines the level of
carriers in the channel.

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 Operating Regions of MOSFET
• For an N-MOS device, the channel is formed by electrons. So, to attract electrons,
gate voltage must be greater than source voltage.
• For the formation of channel, the difference between 𝑉𝐺 and 𝑉𝑆 𝑉𝐺 − 𝑉𝑆 must
be greater than 𝑉𝑡ℎ (threshold voltage of the MOS).
• Threshold voltage is defined as the minimum difference in gate-to-source voltage
needed for the formation of channel in a MOS device. For NMOS, 𝑉𝑡ℎ is positive as
for channel formation gate needs to be at higher voltage as explained above.
Similarly.
• for PMOS, 𝑉𝑡ℎ is negative as gate needs to be at lower voltage than source for
channel to be formed.

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 Operating Regions of MOSFET
• On increasing gate voltage beyond threshold voltage, current through MOS
increases with increasing gate voltage.
• Also, if we increase drain voltage keeping gate voltage constant, current increases
till a particular drain voltage.
• After that, increasing drain voltage does not affect the current. Depending upon
the relative voltages of its terminals, MOS is said to operate in either of the cut-off,
linear or saturation region.

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 Operating Regions of MOSFET
• Cut-Off region :
The cut-off region is a region in which there will be no conduction and as a result, the
MOSFET will be OFF. In this condition, MOSFET behaves like an open switch. Thus, for
MOS to be in cut-off region, the necessary condition is :
0 < 𝑉𝐺𝑆 < 𝑉𝑡ℎ for NMOS.
0 > 𝑉𝐺𝑆 > 𝑉𝑡ℎ for PMOS.

• Cut-off region is also known as sub-threshold region. In this region, the dependence of
current on gate voltage is exponential. The magnitude of current flowing through MOS in
cut-off region is negligible as the channel is not present. The conduction happening in
this region is known as sub-threshold conduction.

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 Operating Regions of MOSFET
• Ohmic region (Linear region)
• For an NMOS, as gate voltage increases beyond threshold voltage, channel is formed
between source and drain terminals. Now, if there is voltage difference between
source and drain, current will flow.
• The current 𝐼𝐷𝑆 increases with an increase in the value of 𝑉𝐷𝑆 .
• MOSFETs are made to operate in this region, they are used as amplifiers.

𝑉𝐺𝑆 ≥ 𝑉𝑡ℎ
and
𝑉𝐷𝑆 < 𝑉𝐺𝑆 − 𝑉𝑡ℎ

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 Operating Regions of MOSFET
• Ohmic region (Linear region)
• Similarly, for PMOS transistor, condition for PMOS to be in linear region is
represented as:

𝑉𝐺𝑆 < 𝑉𝑡ℎ

and
𝑉𝐷𝑆 > 𝑉𝐺𝑆 + 𝑉𝑡ℎ

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 Operating Regions of MOSFET
• Saturation region
• For an NMOS, at a particular gate and source voltage, there is a particular level of
voltage for drain, beyond which, increasing drain voltage seems to have no effect on
current.
• When a MOS operates in this region, it is said to be in saturation. The condition is
given as :

𝑉𝐺𝑆 ≥ 𝑉𝑡ℎ
and
𝑉𝐷𝑆 > 𝑉𝐺𝑆 − 𝑉𝑡ℎ

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 Operating Regions of MOSFET
• Saturation region
• Similarly, for PMOS transistor, condition for PMOS to be in saturation region is
represented as:

𝑉𝐺𝑆 < 𝑉𝑡ℎ

and
𝑉𝐷𝑆 ≤ 𝑉𝐺𝑆 + 𝑉𝑡ℎ

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Operating Regions of MOSFET

Transfer characteristics Drain characteristics

N Channel depletion type MOSFFET

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 Questions
• Q1 : The DMOSFET transistor has a VGS,off = −3 V and 𝐼𝐷𝑆𝑆 = 6 𝑚𝐴. What are the
values of 𝐼𝐷 for 𝑉𝐺𝑆 = −1 𝑉, −2 𝑉, 0 𝑉, 1 𝑉 and 2 𝑉 ?

38
 Questions
• Q2 : The DMOSFET amplifier represents the values VGS,off = −2 V, 𝐼𝐷𝑆𝑆 = 4 𝑚𝐴 and
𝑔𝑚0 = 2000 µ𝑆. What’s the output voltage of the circuit ?
We give: 𝐴𝑣 = 𝑔𝑚 𝑟𝑑 𝑉𝐷𝐷
15 𝑉
𝑅𝐷
2 𝑘Ω
𝑉𝑜𝑢𝑡

𝑅𝐿
𝑉𝑖𝑛 𝑅𝐺 1 𝑘Ω
20 𝑚𝑉 1 𝑀Ω

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