REPORT OF LAB EXPERIMENTAL SIMULATION USING PROTEUS Experiment No: 1
By MOHAMED FARNOS.B Date: 14/08/2025
I - M.Sc., Electronics Science
V-I CHARACTERISTICS OF P-N JUNCTION DIODE
IN FORWARD AND REVERSE BIAS
OBJECTIVE:
Simulate and plot V-I characteristics for P-N JUNCTION
DIODE(1N4001) in Proteus.
OBSERVE THE SIMULATION:
COMPONENTS REQUIRED
1. PN Junction Diode(1N4001)
2. Resistors (220 R),(1 KR)
3. Potentiometer 1K
APPARATUS REQUIRED
1 .Regulated DC Power Supply (0-30)v
2. Ammeter-2 (0-100mA),(0-100uA)
3. Voltmeter-2
CIRCUIT DIAGRAM:
FORWARD BIAS
FORWARD BIAS
R1
+88.8
RV1 220R mA
B1
12V
+88.8 D2 +88.8
73%
Volts 1N4001 Volts
1k
Fig.1
REVERSE BIAS:
REVERSE BIAS
R2
+88.8
RV2 1k µA
B2
12
+88.8 +88.8
77% Volts D1 Volts
1N4001
1k
Fig.2
PROCEDURE
1. Place the components mentioned above by tap [P] keyword for
components.
2. Place the above mentioned apparatus by clicking the above apparatus
names which placed in specified modes in the left corner.
3. For ammeter and Voltmeter go to virtual instruments mode.
4. For battery DC power source you can get in components mode by tap
keyword P.
5. Connect the circuit as shown in Fig.1 for Forward Bias and Run the
simulation by click the Run button on bottom left corner and observe
the output current and voltage by changing the potentiometer
6. For Reverse Bias connect the circuit as shown in Fig.2 and Run the
simulation by click the Run button on bottom left corner and observe
the output current and voltage by changing the potentiometer
PLOT THE GRAPH FOR V-I CHARACTERISTICS
OF DIODE:
FORWARD BIAS
CIRCUIT DIAGRAM:
DV
R1 D1 DI
220 OHM
1N4001
Fig.3
STEPS TO SIMULATE IN PROTEUS:
1. Open Proteus -- create New Project
2 . Go to components mode in left corner or press [P] keyword
3. Then place the components:
1. Diode 1N4001
2. Resistor 220 ohm
4. Go to generator mode:
1. Add dc generator
2. double click dc generator and change name into DV1(for reference
DV=diode voltage). Then click manual edit then change [value=x]
because we are make to change this value will be sweep value that we
are going to add.
5. Go to probe mode in left corner:
1. Select current probe, change name into ID1 (for reference DI=diode
current) then connect to negative terminal of diode.
6. Go to terminals mode:
1. Select ground terminal
7. Connect the circuit as shown in the above figure.1
8. Go to graph mode:
1. Choose dc sweep
2. Left click once on your sheet to start drawing the graph then tap left
click.
3. Then right click that and click the edit properties.
4. Change name into DIODE V-I CHARACTERISTICS
FORWARD BIAS
5. Change start value= 0 and stop value=1 [1voltage)
6. Name the left axis lable to FORWARD CURRENT and
right axis lable into FORWARD VOLTAGE then click ok
9. Now need to add probe into graph: Tap the current probe and drag that
onto the graph.
10.When it is added we get addition of addition lines then hold left click
and tap space bar to draw the graph
11.When the graph drawn we get the V-I Characteristics Of P-N Junction
Diode in the forward bias region.
Fig.4
12. You can see the above figure for reference
13. When you right click the title of the graph it goes to full screen mode.
Fig.5
14.When left clicks we can place cursor on the graph and we can move the
cursor along to take any readings with the x-axis on the left shows Voltage
and y-axis on the right shows Current.
Fig.6
15.Fig.6 shows the output graph of V-I Characteristics of P-N Junction
Diode in Forward bias.
REVERSE BIAS:
CIRCUIT DIAGRAM:
DV2 ID2D4
R4
1K
1N4001
REVERSE BIAS
Fig.7
1. Connect the circuit as shown in Fig.7 by following instructions as
mentioned above in forward bias section.
2. Plot the graph following the mentioned instructions
3. Change the DC sweep graph name into DIODE V-I
CHARACTERISTICS REVERSE BIAS
4. Change the start value into -100m and stop value into 1.5.
Fig.8
Fig.9
5. Fig.9 shows the output V-I Charateristics of P-N Junction Diode in
Reverse Bias.
FORWARD BIAS REGION
REVERSE BIAS REGION Fig.10
Fig.11
6. Fig.10 shows the output graph of V-I Characteristics of Diode in
Forward and Reverse Bias
7. Fig.11 shows comparative graph of output.
Fig.12
8.Fig.12 shows all simulation circuits and graphs of V-I Characteristics of
P-N Junction Diode in Forward and Reverse Bias.
CONCLUSION:
The VI characteristics of the PN junction diode in Forward and Reverse bias
were successfully obtained using simulation in Proteus. The graph shows
that the diode remains non-conductive until the forward voltage reaches
approximately **0.4 V** (for a silicon diode) in simulation, after which the
current increases exponentially with voltage. This behavior confirms the
theoretical operation of a diode, where conduction occurs only after the
threshold voltage is crossed. For Reverse bias the graph shows current is not
raising in forward voltage and it is fall doen for negative voltage and after
the breakdown voltage appears.
Experiment No: 2
Date: 14/08/2025
BJT-CE INPUT CHARACTERISTICS
OBJECTIVE:
To Simulate and Plot the graph for Input Characteristics of BJT in
Common Emitter Configuration in Proteus Simulation software.
OBSERVE THE SIMULATION:
COMPONENTS REQUIRED:
1. Transistor (BC547)
2. Potentiometer (POT –HG) -2
3. Battery 12v DC Power Supply -2
APPARATUS REQUIRED:
1. DC Voltmeter – 2
2. DC Ammeter – 2
CIRCUIT DIAGRAM:
IC +88.8
Amps
IB Q1
+88.8 BC547
Amps +88.8
Volts
VCE
RV3 B2
17%
1k 12V
B1
100%
12V
RV2 +88.8
Volts
VBE
1k
Fig.1
PROCEDURE:
1. Place the components mentioned above by tap [P] keyword for
components.
2. Place the above mentioned apparatus by clicking the above apparatus
names which placed in specified modes in the left corner.
3. For ammeter and Voltmeter go to virtual instruments mode.
4. For battery DC power source you can get in components mode by tap
keyword P.
5. Connect the circuit as shown in Fig.1 and set VCE [1v] as constant
voltage by adjusting RV3 potentiometer then run the simulation and
observe the Base Current IB by adjusting Rb2 Potentiometer for Base
Emitter Voltage VBE
6. Observe the various output by changing Collector-Emitter Voltage
VCE such as 2V, 3V, 5V.
Plot the Graph for Input Characteristics of BJT in CE
Configuration:
CIRCUIT DIAGRAM:
VCE
VBE IB Q1
BC547
Fig.2
STEPS TO SIMULATE IN PROTEUS:
1. Open Proteus -- create New Project
2. Go to components mode in left corner or press [P] keyword
3. Place the components [BC547} Transistor
4. Add DC Generator which is in Generator mode. Connect one DC
generator to the Base of BJT name it as VBE and click to manual edit
and change {VALUE=X} then connect another DC generator to the
collector of BJT and name it as VCE and change {VALUE=X}.
5. Connect the circuit as shown in above Fig.2.
6. Connect current probe between VBE and Base of BJT, which is in the
probe mode , and name it as IB.
7. Draw the Transfer graph which is in the graph mode.
8. Edit transfer graph properties by double clicking he graph.
9. Change the name of the graph as BJT CE INPUT
CHARACTERISTICS for your reference and choose source1 as
VBE and Source 2 as VCE.
10.Change start and stop value for source as 0 and 5 and number of steps
is 10, And also change for source 2 as 0 to 5 , and number of step
value is 4.
11.Drag the current probe IB into the graph.
12.Simulate the graph and observe the graph.
Fig.3
Fig.4
13.You can see the VBE on left bottom and IB current and VCE on right
bottom of the graph screen which cursor is clicked in the maximize
screen of the graph.
CONCLUSION:
The Input Characteristics of BJT in CE Configuration was simulated
and plotted the graph in the Proteus.
Experiment No: 3
Date: 14/08/2025
BJT-CE OUTPUT CHARACTERISTICS
OBJECTIVE:
To Simulate and Plot the graph for Output Characteristics of BJT in
Common Emitter Configuration in Proteus Simulation software.
OBSERVE THE SIMULATION:
COMPONENTS REQUIRED:
4. Transistor (BC547)
5. Potentiometer (POT –HG) -2
6. Battery 12v DC Power Supply -2
APPARATUS REQUIRED:
3. DC Voltmeter – 2
4. DC Ammeter – 2
CIRCUIT DIAGRAM:
IC +88.8
mA
IB Q1
+88.8 BC547
µA +88.8
R1 Volts
VCE
100k
RV3 B2
30%
1k 12V
B1
35%
12V
RV2 +88.8
Volts
VBE
1k
Fig.1
PROCEDURE:
1. Place the components mentioned above by tap [P] keyword for
components.
2. Place the above mentioned apparatus by clicking the above apparatus
names which placed in specified modes in the left corner.
3. For ammeter and Voltmeter go to virtual instruments mode.
4. For battery DC power source you can get in components mode by tap
keyword P.
5. Connect the circuit as shown in Fig.1 and set Base Current IB as
constant current by adjusting RV2 potentiometer then run the
simulation and observe the Collector Current IC by adjusting Rb3
Potentiometer for Collector Emitter Voltage VCE
6. Observe the various output by changing Base Current IB.
Plot the Graph for Input Characteristics of BJT in CE
Configuration:
CIRCUIT DIAGRAM:
VCE
IC
IB Q1
BC547
Fig.2
STEPS TO SIMULATE IN PROTEUS:
1. Open Proteus -- create New Project
2. Go to components mode in left corner or press [P] keyword
3. Place the components [BC547] Transistor
4. Add DC Generator which is in Generator mode. Connect one DC
generator to the Base of BJT name it as IB and click to Current source
then connect another DC generator to the collector of BJT and name
it as VCE and change {VALUE=X}.
5. Connect the circuit as shown in above Fig.2.
6. Connect current probe between VCE and Collector of the BJT, which
is in the probe mode , and name it as IC.
7. Draw the Transfer graph which is in the graph mode.
8. Edit transfer graph properties by double clicking he graph.
9. Change the name of the graph as BJT CE OUTPUT
CHARACTERISTICS for your reference and choose source1 as
VCE and Source 2 as IB.
10.Change start and stop value for source1 as 0 and 1.2 and number of
steps is 5, And also change for source 2 as 10uA to 100uA , and
number of step value is 5.
11.Drag the current probe IC into the graph.
12.Simulate the graph and observe the graph.
Fig.3
Fig.4
Fig.5
13.You can see the VCE on left bottom and IB current and IC on right
bottom of the graph screen which cursor is clicked in the maximize
screen of the graph.
CONCLUSION:
The Output Characteristics of BJT in CE Configuration was simulated
and plotted the graph in the Proteus.
