DSEC 60-03A

DSEC 60-03AR

HiPerFREDTM Epitaxial Diode IFAV = 2x30 A

with common cathode and soft recovery VRRM = 300 V
trr = 30 ns

VRSM VRRM Type

A C A TO-247 AD ISOPLUS 247TM
Version A Version AR
V V
A A
300 300 DSEC 60-03A C C
300 300 DSEC 60-03AR A A
C (TAB) Isolated
back surface *

A = Anode, C = Cathode * Patent pending

Symbol Conditions Maximum Ratings Features

IFRMS 70 A • International standard package
IFAVM TC = 145°C; rectangular, d = 0.5 30 A • Planar passivated chips
TC = 135°C (AR-Version) • Very short recovery time
• Extremely low switching losses
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A • Low IRM-values
EAS TVJ = 25°C; non-repetitive 1.2 mJ • Soft recovery behaviour
IAS = 3 A; L = 180 µH • Epoxy meets UL 94V-0
• Version AR isolated and
IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A
UL registered E153432
TVJ -55...+175 °C
TVJM 175 °C Applications
Tstg -55...+150 °C
• Antiparallel diode for high frequency
Ptot TC = 25°C 165 W switching devices
• Antisaturation diode
Md * mounting torque 0.8...1.2 Nm
• Snubber diode
FC mounting force with clip 20...120 N
• Free wheeling diode in converters
VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~ and motor control circuits
• Rectifiers in switch mode power
Weight typical 6 g supplies (SMPS)
* Verson A only; ** Version AR only • Inductive heating
• Uninterruptible power supplies (UPS)
Symbol Conditions Characteristic Values • Ultrasonic cleaners and welders
typ. max.
Advantages
IR ① VR = VRRM; TVJ = 25°C 10 µA
TVJ = 150°C 1 mA • Avalanche voltage rated for reliable
operation
VF ② IF = 30 A; TVJ = 150°C 0.91 V • Soft reverse recovery for low EMI/RFI
TVJ = 25°C 1.25 V • Low IRM reduces:
RthJC Version A 0.9 K/W - Power dissipation within the diode
Version AR 1.1 K/W - Turn-on loss in the commutating switch
RthCH 0.25 K/W
trr IF = 1 A; -di/dt = 200 A/µs; 30 ns Dimensions see Outlines.pdf
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 7 A
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0%
② Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified
0519

IXYS reserves the right to change limits, Conditions and dimensions.

© 2005 IXYS All rights reserved 1-2

 DSEC 60-03A
DSEC 60-03AR

60 800 30
TVJ = 100°C TVJ = 100°C
A
nC VR = 150V VR = 150V
A 25
600 IRM
IF
40 Qr IF = 60A 20 IF = 60A
TVJ=150°C IF = 30A IF = 30A
TVJ=100°C 400 IF = 15A 15 IF = 15A
TVJ= 25°C
20 10
200
5

0 0 0
0.0 0.5 1.0 V 1.5 100 A/µs 1000 0 200 400 600 A/µs800 1000
VF -diF/dt -diF/dt

Fig. 1 Forward current IF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM
versus VF versus -diF/dt versus -diF/dt

1.4 90 14 1.2
TVJ = 100°C TVJ = 100°C
ns V IF = 30A µs
VR = 150V
1.0
1.2 80
trr VFR tfr
tfr
Kf 12 0.8
1.0 70 VFR
IRM IF = 60A
0.6
IF = 30A
0.8 60 IF = 15A
Qr 10 0.4

0.6 50
0.2

0.4 40 8 0.0
0 40 80 120 °C 160 0 200 400 600 800 1000
A/µs 0 200 400 600 A/µs
800 1000
TVJ -diF/dt diF/dt

Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr Fig. 6 Peak forward voltage VFR
versus TVJ versus -diF/dt and tfr versus diF/dt

1
Constants for ZthJC calculation:
K/W
i Rthi (K/W) ti (s)
0.1
1 0.465 0.005
ZthJC 2 0.179 0.0003
3 0.256 0.04
0.01

0.001

DSEP30-03A/DSEC 60-03A
0.0001 NOTE: Fig. 2 to Fig. 6 shows typical values
0.00001 0.0001 0.001 0.01 0.1 s 1
t
Fig. 7 Transient thermal resistance junction to case
0519

IXYS reserves the right to change limits, Conditions and dimensions.

© 2005 IXYS All rights reserved 2-2