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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specification for the 2SD1148 Silicon NPN Power Transistor, which is suitable for power amplifier applications, particularly in high fidelity audio output stages. It includes details on maximum ratings, characteristics, and pin configuration. The transistor features a TO-3P(I) package and offers a collector current of up to 10A with a total power dissipation of 100W.

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6 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specification for the 2SD1148 Silicon NPN Power Transistor, which is suitable for power amplifier applications, particularly in high fidelity audio output stages. It includes details on maximum ratings, characteristics, and pin configuration. The transistor features a TO-3P(I) package and offers a collector current of up to 10A with a total power dissipation of 100W.

Uploaded by

serking3003
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1148

DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB863

APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 140 V

VCEO Collector-emitter voltage Open base 140 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 10 A

IB Base current 1 A

PT Total power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1148

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Base-emitter breakdown voltage IC=50mA ,IB=0 140 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V

VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=140V; IE=0 5 µA

IEBO Emitter cut-off current VEB=5V; IC=0 5 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 160

hFE-2 DC current gain IC=5A ; VCE=5V 25

fT Transition frequency IC=1A ; VCE=10V 20 MHz

Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 200 pF

hFE-1 Classifications

R O

55-110 80-160

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1148

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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