AO4805

30V Dual P-Channel MOSFET

General Description Product Summary

The AO4805 combines advanced trench MOSFET VDS -30V

technology with a low resistance package to provide ID (at VGS=-20V) -9A
extremely low RDS(ON). This device is ideal for load RDS(ON) (at VGS=-20V) < 15mW
switch and battery protection applications.
RDS(ON) (at VGS =-10V) < 18mW

100% UIS Tested

100% Rg Tested

SOIC-8
Top View Bottom View D1 D2

Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G1 G2

S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -9
ID
Current TA=70°C -7 A
C
Pulsed Drain Current IDM -50
C
Avalanche Current IAS, IAR 33 A
Avalanche energy L=0.1mH C EAS, EAR 54 mJ
TA=25°C 2
PD W
Power Dissipation B TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RqJL 32 40 °C/W

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 AO4805

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.7 -2.3 -2.8 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -50 A
VGS=-20V, ID=-9A 10 15 mW
VGS=-10V, ID=-8A 12 18
RDS(ON) Static Drain-Source On-Resistance mW
TJ=125°C 13 20
VGS=-4.5V, ID=-5A 29 mW
gFS Forward Transconductance VDS=-5V, ID=-9A 27 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2060 2600 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 370 pF
Crss Reverse Transfer Capacitance 295 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2.4 3.6 W
SWITCHING PARAMETERS
Qg Total Gate Charge 30 39 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-9A 4.6 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.67W, 9.4 ns
tD(off) Turn-Off DelayTime RGEN=3W 24 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=100A/ms 30 40 ns
Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/ms 22 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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 AO4805

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
-10V -5V
VDS=-5V
-6V
60 -4.5V 60
-ID (A)

-ID(A)
40
40
-4V

20 125°C 25°C
VGS=-3.5V 20

0
0 1 2 3 4 5 0
-VDS (Volts) 1 2 V3GS(Volts) 4 5 6
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20
1.6
Normalized On-Resistance

1.4 VGS=-10V
15 ID=-8A
RDS(ON) (mW)

VGS=-10V
17
1.2 5
10 VGS=-20V 2
1
ID=-9A 10
VGS=-20V

5 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

35 1.0E+01
ID=-9A
30 1.0E+00
40
25 1.0E-01
RDS(ON) (mW)

125°
IS (A)

20 1.0E-02 125°
25°
15 1.0E-03
25°

10 1.0E-04

5 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4805

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=-15V
ID=-9A
2500
8
Ciss

Capacitance (pF)
2000
-VGS (Volts)

6
1500
4
1000
Coss
2
500

Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 10000
TA=25°C
100.0
1000
10ms
Power (W)

RDS(ON)
ID (Amps)

10.0
limited 100ms
100
1.0 1ms
10ms
10
TJ(Max)=150°C
0.1 10s
TA=25°C
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s)
Figure 10: Maximum Forward Biased Safe Figure 11: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA
Thermal Resistance

1 RqJA=90°C/W

0.1

0.01 PD

Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4805

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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