Next Materials 8 (2025) 100764

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Next Materials
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Research article

Optimization of a-IGZO top gate thin film transistor for ammonia gas sensor
Abhinandan Jain a,b , Praveen Kumar Jain a,*
a
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, India
b
Department of Electronics Engineering, Rajasthan Technical University, Kota, India

A R T I C L E I N F O A B S T R A C T

Keywords: This study introduces an a-IGZO based thin film transistor incorporating catalytic metals as gate contacts,
a-IGZO designed for gas sensing applications. The controllability of the channel may be altered by varying the gate
Thin film transistor electrode’s work function, which enhances sensing capabilities. This research explores CO, Mo, Pd, and Ru as
Gas sensing
gate electrode metals and evaluates OFF current sensitivity by modifying the work function. The OFF-state
off current sensitivity
sensitivity values for Pd, Co, Ru, and Mo, with a work function change of 200 meV, are 7.37, 9.94, 555.56,
Work function
and 2179.51, respectively. Among them, the Mo gate electrode exhibits outstanding OFF sensitivity, making it
highly suitable for NH₃ gas sensing. The author examines dielectric materials ranging from low to high
permittivity and identifies HfO₂ as the optimal selection due to its ability to enhance gate capacitance, reduce
leakage current, and improve the efficiency of carrier conduction in the channel. The OFF current sensitivity is
influenced by the thickness of the channel layer, with reported values of 1418.36, 1899.53, 2119.31, and
2179.51 for thicknesses of 30 nm, 25 nm, 20 nm, and 15 nm, respectively. The work function is studied based on
different gas amounts, leading to OFF current sensitivity values of 2.14, 5.59, 68.33, and 2179.51 for gas con­
centrations of 1, 2, 5, and 9 ppm, respectively.

1. Introduction capacitive gas sensors [4].

Thakur et al. investigated an organic field-effect transistor (OFET)
The integration of TFT technology into gas sensors offers excellent incorporating platinum as the gate electrode for hydrogen (H₂) gas
opportunities for creating small, low-power, and extremely sensitive sensing, evaluating the performance using SiO₂ to La₂O₃ as dielectric
detection systems. These systems have significance in several fields, materials. Although the study demonstrated promising sensing capa­
including environmental monitoring, industrial safety, and medical di­ bilities, limitations in long-term stability and sensitivity were identified
agnostics. Metal oxides are considered promising materials for the [5]. Neeraj et al. analyzed the sensing performance of phosphine (PH₃)
development of three-terminal optoelectronic neurosynaptic devices gas using various catalytic gate metals and identified iridium as the most
[1]. Xiao-Fen Xu investigated IGO TFTs incorporating varying concen­ suitable catalyst for optimal gas detection in the SE-JAM-NW FET
trations of graphene quantum dots and demonstrated that the structure [6]. Jain Neeraj et al. proposed ITZO-based thin-film transis­
resistor-loaded inverter structure is significantly useful for optoelec­ tors and reported that, for molybdenum with a work function difference
tronic applications [2]. of 200 meV, the OFF-state current sensitivity (SIOFF) was measured to
The key parameters used to evaluate gas sensors include accuracy, be 607.27 [7].
response time, selectivity, power consumption, and sensitivity. Several Ammonia (NH₃) detection has attracted significant attention in the
types of gas sensors are available, including metal oxide, infrared, fields of agriculture, environmental monitoring, chemical and pharma­
colorimetric, electrochemical, and catalytic sensors. Among these, metal ceutical processing, and disease diagnosis [8]. The primary sources of
oxide sensors are particularly popular due to their high sensitivity, rapid ammonia gas include nitrification, ammonification, and combustion
response and recovery times, and overall cost-efficiency [3]. Thin-film processes from chemical plants and motor vehicles. Exposure to NH₃ at
transistor gas sensors are attracting considerable interest owing to approximately 50 ppm poses a hazard to human health, affecting the
their superior sensitivity, low power consumption, and remarkable skin, eyes, and respiratory system [9].
selectivity, distinguishing them apart from conventional resistive and Metal oxides like indium oxide (In₂O₃), zinc oxide (ZnO), Indium

* Corresponding author.
E-mail address: [email protected] (P.K. Jain).

https://doi.org/10.1016/j.nxmate.2025.100764
Received 16 April 2025; Received in revised form 20 May 2025; Accepted 27 May 2025
Available online 2 June 2025
2949-8228/© 2025 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC license (http://creativecommons.org/licenses/by-
nc/4.0/).
A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Fig. 1. (a) Device structure of an a-IGZO TFT (b) Calibration of the a-IGZO TFT transfer characteristics for the VDS= 2 V.

gallium zinc oxide (IGZO), indium tin oxide (ITO), and titanium dioxide characteristics. These Mo-based materials are known for their excep­
(TiO₂) are widely used in ammonia (NH₃) gas sensors because of their tional sensitivity and selectivity in detecting gases such as ammonia
excellent gas-sensing capabilities [10,11]. a-IGZO is recognized as a (NH₃), hydrogen sulfide (H₂S), and nitrogen dioxide (NO₂) [16].
highly promising material for switching and sensing functions. A The author examined the response of NH₃ with materials tran­
detailed assessment of the analog and RF performance of a-IGZO-based sitioning from low to high dielectric constants and determined that a
TFTs was carried out, revealing excellent outcomes in terms of high high dielectric material, such as HfO₂, is a promising alternative for low-
switching current and superior high-frequency operation [12].Yong­ power nanoscale devices due to its exceptional thermal stability and
chun Zhang et. al demonstrated that UV-ORTA treatment has emerged reduced bulk trap density [6]. The proposed design utilizes HfO₂ as a
as a simple, controllable, and efficient technique for fabricating gate-stacking material with a high-k dielectric, enhancing gate capaci­
high-performance a-IGZO thin-film transistors (TFTs) at low tempera­ tance and minimizing leakage current to improve the channel’s carrier
tures, making it a promising approach for next-generation flexible dis­ conduction efficiency [17].
plays and integrated circuits [13]. Bo He, Gang He et al. reported
electrospun, highly aligned a-IGZO nanofiber arrays processed at a low
thermal budget of 350 ◦ C. The resulting devices exhibited strong per­ 1.1. Gas sensing mechanism
formance, with a field-effect mobility of 5.63 cm² V⁻¹ s⁻¹ and an excellent
on/off current ratio of approximately 10⁷[14]. The deposition of gas molecules on a metal electrode disturbs its
For NH₃, its reducing properties cause an upward shift in the Fermi composition and lead change in the work function of the metal elec­
level, resulting in a decreased work function [15]. Molybdenum (Mo) trode. The ammonia gas absorbed by the metal electrode and the
and its derivatives, including molybdenum trioxide (MoO₃) and mo­ resultant sensitivity can be estimated with respect to variation in OFF
lybdenum disulfide (MoS₂), have been widely researched for their po­ current. The work function of the metal contact is altered when the gas
tential in gas sensing due to their distinct chemical and electronic molecules on the gate electrode are exposed, as indicated by Eq. (1)
[18]. The gas’s partial pressure is directly related to its molar

2
A. Jain and P.K. Jain Next Materials 8 (2025) 100764

concentration. Since partial pressure is determined by the number of gas Table.1

molecules, any fluctuation alters the metal electrode’s work function Structure dimension and material property.
accordingly. Technology Parameter Value

RT Gate length 45 µm
Δφm = φm(constant) − ln(P) (1) Dielectric thickness 30 nm
4F
Length of the source/drain electrode 20 µm
Where: Channel length 5 µm
Channel layer thickness 15 nm
Δφm = Change in work function, R=Universal gas constant, Gate work function 4.7 ev(Ru)
T = Absolute Temperature, P = Partial pressure of the gas, F=Faraday’s 4.53 ev(Mo)
constant 5.00 ev (Co)
The variation in work function described by Eq. (1) results in a 5.12 ev (Pd)
Source/drain work function 4.33 ev (Ti)
corresponding shift in the flat-band voltage, as outlined in Eq. (2) [18].
VFB = φm − φs ± Δφm (2)
work function limits the complete inversion of the channel in the ON
Where state, which decreases the n-type concentration within that channel. As
a result, the ON current decreased in the device.
Eg
φs = + χ + qφfp A simulation investigation of a-IGZO TFT-based devices has been
2 conducted applying Poisson’s equation, Fermi-Dirac statistics, and
Here, VFB represents the flat-band voltage, ϕm denotes the work conventional Shockley-Read-Hall recombination models. The Silvaco
function of the metal gate, ϕs is the work function of the a-IGZO semi­ Atlas tool is considered for the design and simulation of the structure, as
conductor, and Δϕm refers to the alteration in the metal gate’s work indicated in Fig. 1(a). Fig. 1(b) shows the calibration of the proposed
function caused by NH₃ gas molecules, as described by Eq. (1). The transfer characteristics with the experimental data from [23]. The de­
variation in flat-band voltage leads to a corresponding modification in vice is examined at a drain-to-source voltage of VDS = 2 V and a
the threshold voltage Vth of the a-IGZO. The OFF-state drain current Ioff gate-to-source voltage of 2.5 V. Highly reactive catalytic metals such as
exhibits a proportional variation with changes in the subthreshold slope, Cobalt, Molybdenum, Ruthenium, and Palladium have been employed
thereby influencing the threshold voltage Vth as indicated in Eq. (3) as gate metals for ammonia gas sensing. The source and drain electrodes
[19]. As a result, the leakage current in the OFF-state is modulated by of a-IGZO TFT are titanium, which has a work function of 4.33 eV.
the variation in Vth. Table 1 shows the structure dimension and material property.
⎡ ⎤ When an oxidizing gas comes in contact with the n-type active layer,
VGS − VTH
⎢ VDS it draws electrons from the channel layer through the reaction with
Isubthreshold = Io e η VT ⎣1 − e VT ⎥ (3)
−
⎦ adsorbed oxygen species and reduces the carriers available for charge
transport. This reduction in carriers reduces the channel conductance
and shifts the transfer curve in the positive direction with a reduction in
Wµ0 Cox V2T e1.8
Where Io = L and VT = KT
q and η is the sub-threshold swing
drain current [24].
coefficient.
The adsorption of NH₃ gas onto the surface of the molybdenum (Mo) 3. Result and discussion
metal contact leads to a modification in its work function. Measuring the
difference in work function between two surfaces is more practical, and This section discusses the applicability of different catalytic elec­
this can be accomplished using a Kelvin probe [19]. As the work func­ trodes, i.e. Mo, Ru, Pd, and Co, on transfer characteristics of TFT. The
tion of the gate electrode increases barrier height for tunneling across detection of NH₃ gas is evaluated in the a-IGZO TFT by examining its
the gate electrode and oxide increases, which in turn affects the accu­ transfer characteristics and various performance metrics, including ON
mulation of charge carriers in the channel region hence a significant current, OFF current, ION/IOFF ratio, SIOFF, and SION, among others. The
reduction is observed in the gate leakage or minority carrier current subsequent analysis examines the influence of various dielectric mate­
[20]. rials and channel thickness on NH3 gas sensing in a-IGZO-based TFTs.
The target gases remove charge (electrons or holes) from the con­
duction or valence band and trap them on the surface as ions with
3.1. Impact of different catalytic electrodes on transfer characteristics of
positive or negative charge. It induces band bending in the sensing layer,
a-IGZO TFT
capturing electrons (or holes) at the surface of the sensor layer as ions
[21]. The trapping of charges will persist until thermodynamic equi­
The ID-VGS curves of the proposed NH3 gas detector with and without
librium is attained. The transfer of charge results in the formation of
gas molecules are illustrated in Fig. 2 with a linear and logarithmic scale.
dipole layers on the sensing layer’s surface, leading to a potential dif­
The interaction of NH₃ gas with Mo, Ru, Co, and Pd is investigated by
ference across that surface. This potential difference resulted in an
systematically altering the work function in increments of 50, 100, 150,
alteration of the work function of the sensing layer [22].
and 200 meV. This variation leads to a noticeable reduction in both ON
and OFF current levels. To obtain the ON and OFF sensitivity Eqs. (4)
2. Device design and simulation parameter
and (5) [25] to measure the performance of the device with respect to
different gate metals.
The four different gate materials Mo, Ru, Pd, and Co are selected as
the catalyst metal electrode due to their higher sensitivity towards IOFF(without gas)
SIOFF = (4)
ammonia gas. The ammonia gas is exposed on the surface of the catalytic IOFF(with gas)
gate material, and observed the change in the work function. The author
examined the impact of modulation on work function and obtained ION(without gas)− ION(with gas)
SION = (5)
transfer characteristics and OFF sensitivity. The channel’s controlla­ ION(without gas)
bility is altered by modifying the work function of the gate electrode for
The OFF state current variations can be analyzed as variations of the
enhanced sensing. The increase in the metal work function directly de­
work function of gate metal contact and reported as minority charge
pends upon the gas flow surrounding the electrode. The increased gate
carrier variation more impactful as compared to ON current charge

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A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Fig. 2. Variation of transfer characteristics of a-IGZO TFT with and without gas molecules of (a) Palladium (b) Cobalt (c) Ruthenium (d) Molybdenum.

Table 2
Sensitivity calculation of a-IGZO based TFT ammonia gas sensor for different electrode.
Gate Electrode Δφm Ion (A) Ioff (A) Ion/Ioff SIOFF SION

Pd Without gas 2.12E− 04 8.71E− 17 2.43E+ 12 - -

50 meV 1.94E− 04 1.77E− 17 1.09E+ 13 4.91 0.08
100 meV 1.77E− 04 1.59E− 17 1.63E+ 12 5.48 0.16
150 meV 1.61E− 04 1.33E− 17 1.21E+ 13 6.54 0.24
200 meV 1.46E− 04 1.18E− 17 1.23E+ 12 7.37 0.31
Co Without gas 2.58E− 04 3.07E− 16 8.40E+ 11 - -
50 meV 2.38E− 04 2.07E− 16 1.15E+ 12 1.48 0.08
100 meV 2.19E− 04 6.11E− 17 3.59E+ 12 5.02 0.15
150 meV 2.01E− 04 4.14E− 17 1.28E+ 12 7.42 0.22
200 meV 1.84E− 04 3.09E− 17 1.95E+ 12 9.94 0.29
Ru Without gas 3.89E− 04 1.38E− 13 2.82E+ 09 - -
50 meV 3.66E− 04 1.91E− 14 1.92E+ 10 7.22 0.06
100 meV 3.43E− 04 2.44E− 15 1.41E+ 11 56.58 0.12
150 meV 3.21E− 04 7.78E− 16 4.13E+ 11 177.12 0.18
200 meV 2.99E− 04 2.48E− 16 1.20E+ 12 555.56 0.23
Mo Without gas 4.73E− 04 9.55E− 11 4.96E+ 06 - -
50 meV 4.48E− 04 1.41E− 11 3.18E+ 07 6.77 0.05
100 meV 4.23E− 04 2.05E− 12 2.06E+ 08 46.46 0.11
150 meV 3.99E− 04 2.99E− 13 1.34E+ 09 319.80 0.16
200 meV 3.75E− 04 4.38E− 14 8.56E+ 09 2179.51 0.21

carriers that indicate the variation of molar concentration of gas on the Table 2 indicates that the OFF-state sensitivity for the Pd gate metal
surface of metal contact. The OFF sensitivity is significantly enhanced contact ranges from 4.91 to 7.37 as the work function is varied from
for various gate metals, corresponding to the variance in the work 50 meV to 200 meV. The OFF sensitivity of Pd is very low to detect the
function of the gate metal. When more molecules come into contact with presence of the NH3 gate on the surface of the gate metal. When cobalt
the gate metals, the OFF sensitivity significantly increases as the work (Co) is used as the gate metal contact in thin film transistors, the OFF-
function rises. state sensitivity fluctuates from 1.48 to 9.94 as the work function

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A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Fig. 3. Variation of (a) Gate to source capacitance (b) Gate to drain capacitance (c) Gate to gate capacitance (d) Transconductance of a-IGZO TFT with and
without gas.

increases from 50 meV to 200 meV, suggesting that Co is an inadequate metal is similar to the Pd gate contact transfer response.
choice for efficient NH₃ detection, as represented in Table 2. The cobalt Table 2 presents the IOFF sensitivity of the Ru gate metal contact
modified ZnO sensor proved to be quite effective, especially for H2S and which exhibits a significant increase from 7.22 to 555.56 as the work
NO2 gas vapors [26]. The change in transfer characteristics of Co gate function is varied between 50 meV and 200 meV, suggesting that Ru is a

Table 3
Sensitivity calculation of a-IGZO based TFT ammonia gas sensor for different dielectric material.
Dielectric Material Δφm Ion (A) Ioff (A) Ion/Ioff SIOFF SION

SiO2 Without gas 9.10E− 06 8.82E− 09 1.03E+ 03 - -

50 meV 8.42E− 06 4.05E− 09 2.08E+ 03 2.18 0.08
100 meV 7.79E− 06 1.41E− 09 5.53E+ 03 6.26 0.14
150 meV 7.21E− 06 3.33E− 10 2.17E+ 04 26.51 0.21
200 meV 6.67E− 06 5.68E− 11 1.17E+ 05 155.12 0.27
Si3N4 Without gas 6.27E− 05 1.32E− 09 4.75E+ 04 - -
50 meV 5.76E− 05 2.60E− 10 2.22E+ 05 5.07 0.08
100 meV 5.28E− 05 4.09E− 11 1.29E+ 06 32.27 0.16
150 meV 4.83E− 05 6.06E− 12 7.97E+ 06 217.69 0.23
200 meV 4.40E− 05 8.83E− 13 4.98E+ 07 1494.38 0.30
Al2O3 Without gas 1.06E− 04 6.73E− 10 1.57E+ 05 - -
50 meV 9.82E− 05 1.14E− 10 8.62E+ 05 5.92 0.07
100 meV 9.08E− 05 1.71E− 11 5.30E+ 06 39.35 0.14
150 meV 8.37E− 05 2.51E− 12 3.33E+ 07 268.26 0.21
200 meV 7.69E− 05 3.66E− 13 2.10E+ 08 1841.75 0.27
HfO2 Without gas 4.73E− 04 9.55E− 11 4.96E+ 06 - -
50 meV 4.48E− 04 1.41E− 11 3.18E+ 07 6.77 0.05
100 meV 4.23E− 04 2.05E− 12 2.06E+ 08 46.46 0.11
150 meV 3.99E− 04 2.99E− 13 1.34E+ 09 319.80 0.16
200 meV 3.75E− 04 4.38E− 14 8.56E+ 09 2179.51 0.21

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A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Fig. 4. Variation of transfer characteristics of a-IGZO TFT with and without gas molecules of different dielectric material (a) SiO2 (b) Si3N4 (c) Al2O3 (d) HfO2.

highly suitable gate material for NH₃ gas sensing applications. The IOFF carriers in the active layer. This, in turn, results in an increase in the
sensitivity of the Mo gate metal contact is observed to increase pro­ absolute current within the device. The OFF sensitivity of the a-IGZO
gressively and reported at 6.77, 46.46, 319.80, and 2179.51 for work TFT with a SiO₂ dielectric material is observed to be 2.18, 6.26, 26.51,
function adjustments of 50 meV, 100 meV, 150 meV, and 200 meV, and 155.12 for work function variations of 50 meV, 100 meV, 150 meV,
respectively, as indicated in Table 2. The OFF sensitivity is 322 times the and 200 meV, respectively, as indicated in Table 3. The OFF sensitivity
variation of work function of 200 meV for Mo gate metal contact. These of the a-IGZO TFT utilizing an Si₃N₄ dielectric material is recorded as
results highlight Mo as the most effective gate material for NH₃ gas 5.07, 32.27, 217.69, and 1494.38 for work function variations of
detection when integrated with an a-IGZO channel layer. Fig. 2(a) 50 meV, 100 meV, 150 meV, and 200 meV, respectively, as indicated in
through (d) illustrate that the OFF-state current exhibits significantly Table 3.
more variation compared to the ON-state current. Table 3 presents the OFF-state sensitivity values of the a-IGZO TFT
The gate-to-source capacitance (CGS), gate-to-drain capacitance incorporating an Al₂O₃ dielectric, corresponding to work function vari­
(CGD), and gate capacitance (CGG) exhibit higher values in the absence of ations of 50 meV, 100 meV, 150 meV, and 200 meV. The recorded
gas molecules and are shown in Fig. 3(a), (b) and 3(c) as increasing sensitivities are 5.92, 39.35, 268.26, and 1841.75, respectively. The
trends with rising gate-to-source voltage (VGS). The CGG is significantly dielectric material constant (HfO2) reported the best results of OFF
accountable for controlling the charge carriers in the devices. The sensitivity as 6.77, 46.46, 319.80, and 2179.51 for work function vari­
transconductance of the Mo based gate metal contact is the ratio of ations of 50 meV, 100 meV, 150 meV, and 200 meV, respectively, as
change in drain current to variation of gate to source voltages. The Fig. 3 shown in Table 3. The leakage current decreased as the dielectric ma­
(d) illustrates the transconductance variations corresponding to Mo gate terial constant increased, resulting the OFF sensitivity significantly
electrode work function changes of 50 meV, 100 meV, 150 meV, and improving, which indicates the excellent gate control on the device.
200 meV. It indicates that the transconductance is highest in the absence Fig. 4 illustrates the transfer characteristics of a-IGZO TFTs in the
of gas molecules and decreases as the work function increases. presence and absence of gas molecules across dielectric materials with
varying permittivity. The results indicate that the OFF current exhibits a
more pronounced variation compared to the ON current.
3.2. Impact of different dielectric material on transfer characteristics of a-
IGZO TFT

As the dielectric constant of the material increases, the oxide

capacitance also rises, leading to a greater accumulation of charge

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A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Table 4
Sensitivity calculation of a-IGZO based TFT ammonia gas sensor for different channel layer thickness.
Channel Layer Thickness Δφm Ion (A) Ioff (A) Ion/Ioff SIOFF SION

30 nm Without gas 4.70E− 04 2.30E− 09 2.05E+ 05 - -

50 meV 4.46E− 04 4.68E− 10 9.53E+ 05 4.92 0.05
100 meV 4.21E− 04 7.46E− 11 5.65E+ 06 30.83 0.10
150 meV 3.97E− 04 1.11E− 11 3.58E+ 07 207.31 0.16
200 meV 3.74E− 04 1.62E− 12 2.31E+ 08 1418.36 0.21
25 nm Without gas 4.77E− 04 8.27E− 10 5.76E+ 05 - -
50 meV 4.51E− 04 1.37E− 10 3.29E+ 06 6.04 0.05
100 meV 4.26E− 04 2.05E− 11 2.08E+ 07 40.31 0.11
150 meV 4.02E− 04 3.01E− 12 1.34E+ 08 275.29 0.16
200 meV 3.78E− 04 4.36E− 13 8.69E+ 08 1899.53 0.21
20 nm Without gas 4.81E− 04 2.80E− 10 1.72E+ 06 - -
50 meV 4.55E− 04 4.26E− 11 1.07E+ 07 6.58 0.05
100 meV 4.30E− 04 6.26E− 12 6.87E+ 07 44.79 0.11
150 meV 4.05E− 04 9.11E− 13 4.45E+ 08 307.60 0.16
200 meV 3.81E− 04 1.32E− 13 2.88E+ 09 2119.31 0.21
15 nm Without gas 4.73E− 04 9.55E− 11 4.96E+ 06 - -
50 meV 4.48E− 04 1.41E− 11 3.18E+ 07 6.77 0.05
100 meV 4.23E− 04 2.05E− 12 2.06E+ 08 46.46 0.11
150 meV 3.99E− 04 2.99E− 13 1.34E+ 09 319.80 0.16
200 meV 3.75E− 04 4.38E− 14 8.56E+ 09 2179.51 0.21

Fig. 5. Variation of Transfer characteristics of a-IGZO TFT with and without gas molecules of different channel layer thickness (a) 15 nm (b) 20 nm (c) 25 nm
(d) 30 nm.

3.3. Impact of variation of channel layer thickness on transfer OFF sensitivity values are reported as 1418.36, 1899.53, 2119.31, and
characteristics of a-IGZO TFT 2179.51 for channel thicknesses of 30 nm, 25 nm, 20 nm, and 15 nm,
respectively, corresponding to work function variations of 200 meV, as
As the channel layer thickness decreases from 30 nm to 15 nm, the indicated in Table 4. The ON sensitivity remains unaffected by the
OFF sensitivity of the a-IGZO-based thin-film transistor increases. The variation in channel thickness from 30 nm to 15 nm. As the channel

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A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Fig. 6. Variation of OFF current sensitivity of different (a) Gate metal contact (b) Dielectric material (c) Channel layer thickness.

thickness decreases, the OFF current is reduced, leading to an between the fluctuation of the high work function and sensitivity. Fig. 6
improvement in OFF current sensitivity. A thicker channel layer, such as (b) and 6(c) illustrate the sensitivity of the OFF current in relation to
30 nm, results in a higher OFF current, which significantly increases varying dielectric constants and channel layer thicknesses, respectively.
power consumption and contributes to leakage current, ultimately
affecting the transistor’s switching performance. Fig. 5(a)–(d) depict the 3.4. Modeling the influence of gas concentration on transfer
transfer characteristics of the TFT under both gas-free and gas-exposed characteristics and OFF-state sensitivity
conditions, evaluated across varying channel layer thicknesses. Fig. 6
(a) reflects the OFF current sensitivity for metal gate electrodes for Mo, When NH₃ gas is deposited onto a metal surface, the molecules
Ru, Co, and Pd. This graph distinctly illustrates the linear relationship dissociate upon contact with the metal. The resulting species then
rapidly diffuse through the metal and accumulate at the metal–HfO₂
interface. Under the influence of the electric field, these adsorbed spe­
Table 5
cies become polarized, forming a dipole layer at the junction. The
Determine the Hsurf corresponding to different gas concentrations expressed in
presence of the dipole alters the metal’s work function, which in turn
ppm.
leads to a change in the drain current.
Conc. Conc. Molar Conc. =
Hsurf = qH × The electric field between the dipole layers formed can be repre­
(ppm) (g/l) Conc
Molecular mass
(M/l)
Concentration sented using Eq. (6) [27]
×
Molar mass of gas e × qs
NA (/0.001 or cm3) E= (6)
∈
1 0.001 5.87E− 05 1.41E+ 17
2 0.002 1.17E− 04 2.83E+ 17 Where e is the charge of electron and qs is the surface charge equivalent
5 0.005 2.94E− 04 7.07E+ 17 in coulombs/cm2 and ∈ is the permittivity.
9 0.009 5.28E− 04 1.27E+ 18
As an electron moves across the dipole toward the surface, its energy

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A. Jain and P.K. Jain Next Materials 8 (2025) 100764

Table 6 sensitivity is observed at a gas concentration of 9 ppm.

Evaluation of sensitivity in a-IGZO TFT ammonia gas sensors utilizing mo gate
electrodes at different ppm levels. 4. Conclusion
Gas concentration on Ion(A) Ioff (A) Ion/Ioff SIOFF SION
surface (ppm) This study conducted simulations on an a-IGZO-based thin-film
Without gas 4.73E− 04 9.55E− 11 4.96E+ 06 transistor designed for NH₃ gas detection and observed sensitivity
1 4.63E− 04 4.45E− 11 1.04E+ 07 2.14 0.02 values of 7.37, 9.94, 555.56, and 2179.51 corresponding to palladium
2 4.50E− 04 1.71E− 11 2.64E+ 07 5.59 0.05 (Pd), cobalt (Co), ruthenium (Ru), and molybdenum (Mo), respectively,
5 4.18E− 04 1.40E− 12 2.99E+ 08 68.33 0.12
under a 200 mV variation in work function. The study identified mo­
9 3.75E− 04 4.38E− 14 8.56E+ 09 2179.51 0.21
lybdenum (Mo) as the most effective catalytic metal for achieving the
highest IOFF sensitivity in NH₃ gas sensing, with results significantly
level rises. This increase in energy (ΔEq) can be expressed as follows in outperforming those reported in earlier research. The author in­
Eq. (7) [27]: vestigates the influence of various dielectric materials—SiO₂, Si₃N₄,
Al₂O₃, and HfO₂—on the performance of NH₃ gas sensors. As presented
ΔEq = − abs(e × E × T) (7)
in this study, there is a noticeable difference between the OFF-state and
Here, T represents the thickness of the dipole layer. As a result, the ON-state currents. This difference, particularly in the OFF-state current,
energy required to extract an electron from the surface i.e., the work plays a key role in enhancing current sensitivity. The results indicate
function is represented in energy term as indicated in Eq. (8) [27]. that HfO₂ delivers the highest current sensitivity among the dielectric
materials examined and highlighting its exceptional performance. The
e × qs
Δφm (V) = ΔEq = − e × ×T (8) thickness of the channel layer significantly influences OFF sensitivity,
∈
with findings indicating that a 15 nm channel layer is the optimal
Hsurf , the density of the atoms at reaching the surface is calculated in choice. The work function is modeled based on varying gas concentra­
Table 5. tions, and the resulting OFF current sensitivities were found to be 2.14,
Where; 5.59, 68.33, and 2179.51 for gas concentrations of 1, 2, 5, and 9 ppm,
respectively. The simulated results indicate that selecting an appropriate
Charge equivalent /molecules of gas qH= 4 work function optimizes NH₃ molecule adsorption, hence enhancing
Molecular mass of NH3= 17.031 g/mol sensing performance parameters such as drain current, trans­
Avogadro number (NA)= 6.023 × 1023 mol− 1 conductance, source capacitance, drain capacitance, and gate capaci­
Relative permittivity of ammonia ∈ = 1.0072 tance were analyzed under varying gate voltages.

At ideal condition, let us consider all the atoms absorbed at the metal Author contributions
surface find absorption sites at the interfaces qs = Hsurf [27] for
maximum change in work function in Eq. (9) and dipole thickness is The authors confirm contribution to the paper as follows: Abhi­
1 nm. nandan Jain: Study conception, Design and data collection, Analysis
e × Hsurf and interpretation of results, Draft manuscript preparation. Praveen K
Δφm (max)(eV) = − ×T (9) Jain: Analysis and interpretation of results, Reviewed the results and
∈
approved the final version of the manuscript.
Δφm can be obtained by multiplying Δφm (max) with coverage θ.
Table 6 shows SIOFF sensitivity values of 2.14, 5.59, 68.33, and Funding statement
2179.51 corresponding to NH₃ gas concentrations of 1, 2, 5, and 9 ppm,
respectively. It is observed that the sensitivity increases with the con­ Funding information is not applicable / No funding was received.
centration of gas increased on the surface.
Fig. 7(a) presents the transfer characteristics of the Mo gate electrode
Declaration of Competing Interest
under varying NH₃ gas concentrations (ppm), while Fig. 7(b) depicts the
corresponding OFF-state current sensitivity. The highest OFF current On behalf of all authors, the corresponding author states that there is

Fig. 7. (a) Transfer characteristics of a-IGZO TFT with gas concentration in ppm (b) Variation of OFF current sensitivity with gas concentration in ppm.

9
A. Jain and P.K. Jain Next Materials 8 (2025) 100764

no conflict of interest. [11] D. Goyal, C.P. Goyal, D. Chidambaram, Y. Sivalingam, H. Ikeda, S. Ponnusamy, N.
S. Ramgir, NO2 and NH3 detection using work function measurement of
solvothermal synthesised ZnO–NiO nanocomposites: a case study, J. Mater. Sci.
Acknowledgement Mater. Electron. 35 (14) (2024), https://doi.org/10.1007/s10854-024-12685-3.
[12] A. Jain, P.K. Jain, Evaluation of the a-IGZO thin film transistor’s performance in
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10.1557/s43580-024-01036-3.
R Ambedkar National Institute of Technology Jalandhar, Punjab for [13] Y. Zhang, G. He, L. Wang, W. Wang, X. Xu, W. Liu, Ultraviolet-assisted low-
technical support and providing the facility of TCAD SILVACO for the thermal-budget-driven α-InGaZnO thin films for high-performance transistors and
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