UNIVERSITY OF ENGINEERING AND

TECHNOLOGY TAXILA

SUBJECT:
AMPLIFIERS AND OSCILLATORS (LAB)
SUBMITTED TO:
Engr.Faisal Shehzad

SUBMITTED BY:
SAIF UL HAQ (23-TE-10)

MUHAMMAD AZEEM (23-TE-52)

AMJID KHAN (23-TE-86)

DEPARTMENT OF TELECOMMUNICATION
ENGINEERING

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 LAB REPORT: 02
“TRANSISTOR BIASING CIRCUITS”
LAB OBJECTIVES:
• The main objectives of this lab is to check biasing of different bias circuits with two power
supplies.
1. Voltage divider bias circuit
2. Emitter feedback bias circuit
• To measure currents and voltages across emitter, base, and collector.
• Measure the change in values by changing the transistors.

APPARATUS:
HARDWARE:
• Transistors 2N3904
• Resistors
• Connecting wires
• Breadboard
• DC power supply

SOFTWARE:
• NI Multisim 14.3

THEORETICAL BACKGROUND:
BIPOLAR JUNCTION TRANSISTOR:
The three terminals of BJT are base, emitter and collector. A very small current flowing between
base and emitter can control a larger flow of current between the collector and emitter terminal.
Furthermore, there are two types of BJT. These include:
• P-N-P Transistor: It is a type of BJT where one n-type material is introduced or placed
between two p-type materials. In such a configuration, the device will control the flow of
current. PNP transistor consists of 2 crystal diodes which are connected in series. The right
side and left side of the diodes are known as the collector-base diode and emitter-base
diode, respectively.
• N-P-N Transistor: In this transistor, we will find one p-type material that is present
between two n-type materials. N-P-N transistor is basically used to amplify weak signals
to strong signals. In NPN transistor, the electrons move from the emitter to collector

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 region resulting in the formation of current in the transistor. This transistor is widely used
in the circuit.

Figure 1: transistor combinations

There are three types of configuration as a common base (CB), common collector (CC) and
common emitter (CE).
• In Common Base (CB) configuration the base terminal of the transistor is common between
input and output terminals.
• In Common Collector (CC) configuration the collector terminals are common between the
input and output terminals.
• In Common Emitter (CE) configuration the emitter terminal is common between the input
and the output terminals.

TRANSISTOR BIASING:
Transistor Biasing is the process of setting a transistors DC operating voltage or current conditions
to the correct level so that any AC input signal can be amplified correctly by the transistor.

EMITTER FEEDBACK BIAS WITH TWO SUPPLIES:

For proper functioning, the collector-base junction needs to be reverse-biased and the base-
emitter junction needs to be forward-biased. For an NPN transistor that means that the collector
must be at the highest potential, the base somewhat lower and the emitter at the lowest potential
of the three. One way of doing this is to apply the usual positive supply to the collector, but
instead of using a second potential at the base, the base is tied to ground through a resistor. The
requisite forward-bias on the base-emitter is then achieved by connecting the emitter to a
negative power supply. We shall refer to this as two-supply emitter bias.

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CIRCUIT DIAGRAM:

Figure 2: Emitter feedback bias with 2 supplies

VOLTAGE DIVIDER BIAS WITH TWO SUPPLIES:

A voltage divider bias is a common method for biasing a transistor in its active region. In this
method, a voltage divider network is used to set the base voltage of the transistor. When using two
supply voltages, the voltage divider network can be modified to provide the required bias voltage.
When using two supply voltages, one for the positive voltage rail and one for the negative voltage
rail, the voltage divider network needs to be designed differently to take into account both supply
voltages.The basic principle of the voltage divider bias with two supply voltages is to create a
voltage at the base of the transistor that is equal to the midpoint between the two supply voltages.

CIRCUIT DIAGRAM:

Figure 3: Voltage divider bias with 2 supplies

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LAB TASK
Construst transistor biasing circuits (voltage divider bias, emitter feedback bias) with two supply
voltages and measure and calculate their DC parameters.

VOLTAGE DIVIDER BIAS:

PROCEDURE:
1. Components and Equipment Required

• NPN transistor (e.g., BC547)

• Resistors (values calculated based on design)

• Power supply (+Vcc and -Vee)

• Breadboard

• Multimeter

• Connecting wires

• Oscilloscope (if needed for further analysis)

2. Circuit Diagram
• Connect the transistor in a common-emitter configuration.

• Use two resistors (R1 and R2) as a voltage divider to provide the base bias.

• Connect a resistor (RE) at the emitter to ground (or -Vee in dual supply mode).

• Place a collector resistor (RC) between the collector and the positive supply (Vcc).

• Ensure proper power supply connections.

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3. Circuit Assembly
• Insert the transistor into the breadboard.

• Connect the resistors according to the circuit diagram.

• Attach the power supply terminals correctly.

• Double-check all connections to avoid short circuits.

4. Measurement of DC Parameters
• Base Voltage (V_B): Measure using a multimeter at the base of the transistor.

• Emitter Voltage (V_E): Measure voltage at the emitter terminal.

• Collector Voltage (V_C): Measure voltage at the collector terminal.

• Base Current (I_B): Calculate using Ohm’s law: IB=VB−VBERBI_B = \frac{V_B -

V_{BE}}{R_B}IB=RBVB−VBE

• Collector Current (I_C): IC=VC−VERCI_C = \frac{V_C - V_E}{R_C}IC=RCVC−VE

• Emitter Current (I_E): IE=IC+IBI_E = I_C + I_BIE=IC+IB

5. Analysis
• Compare measured values with theoretical calculations.

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 • Check if the transistor is in the active region (V_C > V_E).

• Adjust resistor values if needed to achieve desired operating conditions.

Questions:

Q1. Advantage & Disadvantage of Emitter Bias:

Advantage:

• Great Stability: The emitter resistor (RE) provides negative feedback, stabilizing the
transistor’s operating point against variations in temperature and transistor β (current gain).

Disadvantage:

• Requires Dual Power Supply: Emitter bias typically needs both +Vcc and -Vee for proper
operation, which is less convenient compared to a single-supply design like Voltage
Divider Bias.

Q2. Assumption for Troubleshooting (-1V Emitter)

• In most practical troubleshooting situations, assuming the emitter voltage is around −1V
simplifies analysis.

• However, for precise circuit design, applying Kirchhoff’s Voltage Law (KVL) across the
base-emitter loop is necessary for accurate voltage and current calculations.

Using KVL:

VB=IBRB+VBE+IEREV_B = I_B R_B + V_{BE} + I_E R_EVB=IBRB+VBE+IERE

Where:

• VBV_BVB = Base voltage

• VBEV_{BE}VBE = Base-Emitter voltage (≈ 0.7V for silicon transistors)

• IEREI_E R_EIERE = Voltage drop across emitter resistor

For higher precision, consider temperature variations affecting VBEV_{BE}VBE.

3. Using a Thermistor in the Voltage Divider

• Placing the thermistor in series with R1:

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 o This adjusts the base voltage (V_B) depending on temperature changes.

o If a negative temperature coefficient (NTC) thermistor is used, resistance decreases

as temperature increases, helping to stabilize biasing.

• Using a Positive Temperature Coefficient (PTC) thermistor:

o PTC thermistors increase resistance with rising temperature.

o This can be an alternative method to compensate for thermal variations.

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