ESAC25M-02D thru ESAC25M-06D ®
ESAC25M-02D/ESAC25M-04D/ESAC25M-06D Pb
Pb Free Plating Product
10 Ampere Insulated Doubler Polarity Fast Recovery Half Bridge Rectifiers
Features ITO-220AB Unit:mm
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208 Case Case Case Case
Polarity: As marked on diode body
Positive Negative Doubler Series Connection
Mounting position: Any Common Cathode Common Anode Tandem Polarity Tandem Polarity
Weight: 2.0 gram approximately Suffix "C" Suffix "N" Suffix "D" Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
o
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL ESAC25M-02D ESAC25M-04D ESAC25M-06D UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V
Maximum RMS Voltage VRMS 140 280 420 V
Maximum DC Blocking Voltage VDC 200 400 600 V
Maximum Average Forward Rectified
o IF(AV) 10.0 A
Current TC=100 C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM 100 A
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF 0.98 1.3 1.7 V
@ 5.0 A
Maximum DC Reverse Current @TJ=25 C
o
5.0 uA
o
IR
At Rated DC Blocking Voltage @TJ=125 C 100 uA
Maximum Reverse Recovery Time (Note 1) Trr 35 nS
Typical junction Capacitance (Note 2) CJ 65 pF
o
Typical Thermal Resistance (Note 3) R JC 2.2 C/W
Operating Junction and Storage
TJ, TSTG -55 to +150 o
C
Temperature Range
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05 Page 1/2
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/
ESAC25M-02D thru ESAC25M-06D ®
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
10 100
Pulse Width 8.3ms
PEAK FORWARD SURGE CURRENT,
Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED
(JEDEC Method)
8 80
CURRENT, AMPERES
AMPERES
6 60
4 40
2 20
60 Hz Resistive or
Inductive load
0 0
0 50 100 150 1 10 100
o NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CHARACTERISTICS
50 1000
IINSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS REVERSE CURRENT,
ESAC25M-02D
o
TJ=125 C
100
ESAC25M-04D
MICROAMPERES
5
ESAC25M-06D
AMPERES
10
o
TJ=25 C
1
1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%
VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF
100
10
0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Rev.05 Page 2/2
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/
