Disks and RAID: CS2100 - Computer Organization
Disks and RAID: CS2100 - Computer Organization
Devices
Memory
Datapath
Output
Input
Secondary
Memory
(Disk)
Main
Memory
Cache
Magnetic Disk
Purpose
Sector
General structure
Track
Typical numbers
A prettier picture
Longitudinal vs Perpendicular
10
11
12
Controller
+
1. Seek time: position the head over the
Cache
proper track (3 to 14 ms avg)
- due to locality of disk references
the actual average seek time may
be only 25% to 33% of the
advertised number
2.
Platter
0.5/5400RPM = 5.6ms
to
0.5/15000RPM = 2.0ms
4.
Cylinder
Headunder
Rotational latency: wait for the desired sector to rotate
the head ( of 1/RPM converted to ms)
-
3.
Track
Sector
3.5
3.5
2.5
Capacity (GB)
73.4
200
40
# of surfaces (heads)
15,000
7,200
5,400
57-86
32-58
34
0.2r-0.4w
1.0r-1.2w
1.5r-2.0w
3.6r-3.9w
8.5r-9.5w
12r-14w
MTTF (hours@25oC)
1,200,000
600,000
330,000
Dimensions (inches)
1x4x5.8
1x4x5.8
0.4x2.7x3.9
10
20?/12/-
12/8/1
2.4/1/0.4
16
17
1.9
1.4
0.2
GB/cu.inch
Power: op/idle/sb (watts)
GB/watt
Weight (pounds)
16
SG ST41
SG ST15
SG ST39
SG ST37
RSpeed (RPM)
3600
5400
7200
10000
15000
Year
1983
1990
1994
1998
2003
Capacity (Gbytes)
0.03
1.4
4.3
9.1
73.4
Diameter (inches)
5.25
5.25
3.5
3.0
2.5
ST-412
SCSI
SCSI
SCSI
SCSI
Bandwidth (MB/s)
0.6
24
86
Latency (msec)
48.3
17.1
12.7
8.8
5.7
Interface
18
Bandwidth requirements
Latency issues
2.
blk2
blk3
blk4
Same cost as one big disk assuming 4 small disks cost the
same as one big disk
blk1
redundant (check) data
If a disk fails, the system just goes to the mirror for the data
23
blk2
blk3
blk4
blk1
blk2
blk3
blk4
If a disk fails, the system just goes to the mirror for the data
24
blk1,b1
blk1,b2
blk1,b3
disk fails
1
(odd)
bit parity disk
blk1,B1
blk1,B2
blk1,B3
26
blk2
blk3
blk4
block
parity disk
Supports small reads and small writes (reads and writes that
go to just one (or a few) data disk in a protection group)
- by watching which bits change when writing new information, need
only to change the corresponding bits on the parity disk
- the parity disk must be updated on every write, so it is a bottleneck
for back-to-back writes
27
Small Writes
New D1 data
D1
3 reads and
2 writes
involving all
the disks
D2
D3
D4
D4
D1
D2
D3
2 reads and
2 writes
involving just
two disks
D2
D3
D1
D4
D2
D3
D4
P
28
Cost of higher availability still only 1/N but the parity block
can be located on any of the disks so there is no single
bottleneck for writes
Supports small reads and small writes (reads and writes that
go to just one (or a few) data disk in a protection group)
RAID 5
P0
P0
P1
P1
10
11
12
P2
10
13
14
15
16
P3
13
P3
P2
14
11
12
15
16
RAID 6
Double parity
Similar to RAID 5
31
Summary
Introduction
34
N source
+
+
+
P substrate
-
N+ drain
Traps charges
Float Gate
N+ source
+
+
P- substrate
N+ drain
36
Read-out current
+++++++
-
+++++++
+ Charges
sensed, i.e.,
logic 1
CG
FG
--------------------
N+ source
+
+
P- substrate
N+ drain
No conducting
channel formed,
i.e., no current
flow
Read-out current
cancelled out by trapped
charges in FG
+++++++
N+ source
+++++++
CG
--------
FG
+
+
P- substrate
No charges
sensed, i.e.,
logic 0
N+ drain
Some electrons from source+12V drain flow will be injected into the
floating gate
+12V
Control Gate
Float Gate
N+ source
+
+
P- substrate
N+ drain
39
0V
Not connected
Control Gate
Float Gate
N+ source
+
+
P- substrate
N+ drain
40
Flash memory
NOR
NAND
41
NOR Flash
Bit line
Word line
0
Word line
1
Word line
2
Word line
3
Word line
4
Word line
5
Word line
6
Word line
7
To read bit x, pull word line x to high. Depending on the stored charges of
the corresponding FG, bit line may be connected to ground.
NOR in the sense that word line x is high, the rest is low and output will
be low if corresponding FG has no stored charge.
42
NAND Flash
Bit line
Word line
0
Word line
1
Word line
2
Word line
3
Word line
4
Word line
5
Word line
6
Word line
7
To read bit x, all other floating transistors gate are pulled to very high
voltage so as to ensure a conduction (i.e., whatever stored charges are
not sufficient to cancel out the CG voltage). The word line x is pull to just
high enough to test the stored charge of its FG. If no charge stored in FG
x, then it will conduct and bit line will be connected to ground.
43
MMC:
Internal flash/filesystem
44
Flash density
45
The latest
46
By Year 2012
1 Tb NAND flash = 128 GB chip
1TB or 2TB disk
for ~$400
or 128GB disk for $40
or 32GB disk for $5
47
Write Endurance
Wear leveling
48
Using Flash
49
Hypothesis:
Solution:
50
Advantages
Disadvantages
Assumption that reads can be satisfied from cache may not hold
in some workloads
51
Summary
52
CS2100
Summary
Logic Gate
Circuits
Processor
Memory Hierarchy