MOS Structure:
MOS stands for Metal-Oxide-Semiconductor. It is two-terminal device
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MOS Energy-band Diagram:
MOS Circuit Design
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• The location of equilibrium Fermi-level EF is determined by
the doping type and concentration in Si-substrate. The
different terms can be defined as
E F Ei
F
q
kT ni
Fp ln
q NA
kT ND
Fn ln
q ni
q S q ( E c E F )
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• Three components are brought in physical contact.
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MOS Structure Under External Bias
• Now set the substrate voltage VB at 0 and vary the Gate
voltage Vg.
Flat-Band Condition
• Band bending is due to work function difference of metal and Si i.e.
ΦM – Φ S .
• If a voltage equal and opposite to this potential difference is applied
externally between gate and bulk, then bending near surface can be
compensated.
• In that case bands become flat and condition is called Flat band
condition.
• This voltage is defined as VFB as (for ideal MOS)
VFB M S
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Flat-Band Condition
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MOS under External Bias other than VFB
MOS System has three regions of Operation:
With p-type bulk :
• Accumulation (VG < 0).
• Depletion (VG > 0, but small voltage).
• Inverse (VG >> 0, high).
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Accumulation Region
Accumulation (VG < 0).
• Negative voltage is applied on gate, which attracts hole from bulk
and pushed electrons into deep bulk.
• Concentration of holes increases at the Si-SiO2 surface and results in
the accumulation of holes near surface.
• Oxide electric field directed towards gate, negative surface potential
results in upward band bending near surface.
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Depletion Region
(VG > 0) : small positive voltage is applied on gate wrt bulk
• Positive voltage pushes holes back to bulk. Near surface hole
concentration decreases.
• Holes leave acceptor ions behind and region near the surface
becomes free of mobile carriers. This is called depletion region.
• Downward band bending takes place because of increase in surface
potential.
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Depletion Region
• Positive voltage is further increase, the depletion region increases.
• One can calculate the width of depletion region by solving Poisson
equation.
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Depletion Region
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inversion Region
• With increasing Vg, downward bending also increases. Minority
carriers are attracted from bulk to surface.
• The p and n concentration becomes equal. The difference between Ei
and Efp at surface becomes ‘0’. At this point onwards depletion region
does not increase further. The surface becomes intrinsic.
• As Vg increases again, Ei becomes smaller than EFp on the surface.
The electrons concentration becomes lager than holes concentration
on surface. The n-type region created near the surface is called
inversion layer.
• When density of electrons on surface becomes equal to holes
concentration in bulk, surface is said to be inverted and Φs = -ΦF.
Depletion width is maximum and is defined as
2 Si 2 F
xdm
qN A
VGB VTo
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Threshold Voltage calculation
• The voltage on gate required to create inversion layer is called
threshold voltage.
• Increasing Vgs beyond Vto will not increase surface potential and
depletion width, thus both are approximately constant.
• To calculate the threshold voltage consider the following four
components :
1. The work function difference between gate and channel.
2. The gate voltage component to change the surface potential.
3. The gate voltage component to off-set the depletion charge.
4. Oxide charges are present within the oxide layer. The gate voltage
component to off-set the oxide layer charges.
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Threshold Voltage calculation(5)
For non-ideal oxide layer, fixed positive Oxide charges are considered
• After combining all four expression the final equation for Vt0 is
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Threshold Voltage calculation(5)
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MOSFET Operation
• Now add source and drain to MOS capacitor. The new structure is
called MOS transistor.
• Two types of MOS transistors : NMOS and PMOS
• The distance between S and D is called channel length L and lateral
extent of channel is width W. both W and L are very important
parameters. The channel is formed through applied gate voltage
between S and D.
• Oxide thickness tOX is also very important parameter.
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MOSFET Types
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N-Channel MOSFET Operation
• Simple operation of device is : current conduction control between
Source and Drain using electric field generated by gate voltage .
• When voltage at drain, source and bulk is zero then the device is
simple MOS capacitor.
• When small positive voltage is applied Vgs <Vto, only depletion region
is formed and no channel from source to drain.
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N-Channel MOSFET Operation
• When Vgs > Vto is applied on gate inversion layer is formed and source
to drain are connected through a n-type channel.
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Threshold Voltage in MOSFET Case
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Next Class Topic
MOSFET Operation and I-V Characteristics
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