VLSI Design
Device Modeling (1) 19-916
By Prof. Parag P.
Outline of the chapter
Device models
Models for MOSFET, Diode, BJT
Models developed are utilised for
Developing design equations
Hard analysis
Initial computer simulations
DC models useful for
Biasing
Large signal analysis
AC Models useful for
Small signal sinusoidal steady state
analysis
Modeling
Goal of device model
Obtain fundamental electrical relationship among
the terminal variables of the device, to be
modeled
These electrical characteristics depends on
parameters related to
Geometrical variables
Variables related to device physics
Models incorporate equations having
Either process parameters
or Design parameters
Models have trade offs between
Quality of approximation & complexity.
Engineers considers trade offs accuracy
and use of model
Simple model provides insight for design
and facilitate symbolic hand manipulations
More accurate/more sophisticated model
preferred for computer simulations for
circuits employing these devices.
Models are initially developed by
analytically applying basic physical
principles then empirically modifying the
resulting mathematical expressions to
improve difference between theoretical
and experimental results.
DC model
DC models are - Starting point for
modeling both BJT and MOSFETs.
For this DC model, a linear small signal
model and equivalent simplified ac and
dc circuits will be derived.
Approach to device modeling is drawn
on the next slide.
DC Modeling
A DC model of a device is a
mathematical or numerical relationship
that relates actual terminal voltages
and currents of the device at dc and low
frequencies.
It should be valid for a large range of
terminal voltages and currents.
For MOSFET, diode and BJT, DC model is
very different from linear.
Small signal model
Circuits perform tasks over a limited excitation range
specified in terms of maximum input signal excursion
about non zero dc operating point.
These inputs are of small amplitudes compared to
supply voltages.
Application of these small signal inputs to the circuit
is called small signal analysis or ac analysis.
The point about which the circuit operated is called
bias point or Q-point.
For small signal applications both BJT and MOSFETs
behave as linear devices, even though the devices
themselves are non-linear.
It is achieved by limiting signal excursion to a very
small region to obtain approximately linear behavior.
While doing small signal analysis
Circuit topology
Device characteristics
Q-point
Maximum tolerable distortion at the output must be
considered.
For some circuits small signal analysis performed by
sinusoidal signals
of 10 mV range
Of 10 V range or bigger
Conventions adopted for small signal, large signal and
quiescent values.
Upper case variable with upper case subscript
denote instantaneous total variable value.
Lower case variable denote small signal value.
Upper case variable with lower case subscript denote
quiescent value.
The relationship between these variables is given by:
For small signal analysis VC is assumed to be periodic
with period T and the quiescent value is defined as
The small signal variable is thus a time variable
component of VC.
The electrical behavior of linear multiple terminal
networks can be modeled in terms of h-parameters,
y-parameters or g-parameters.
Y-parameter model for linear small signal equivalent
circuit for both MOSFET and BJT exists.
They can be obtained easily from the dc model.
For linear small signal terminal network
as shown in the fig. on the next slide,
one terminal (terminal 4) is selected as
a reference.
Y-parameters can be written as :
As small signal voltage and current variables
are the time varying part of corresponding
total terminal voltage and current variables in
the parent network related to Q-point, then it
follows that y-parameters can be obtained
from large signal parameters and thus dc
model by the expression
A small signal equivalent is as shown in Fig.
(c), which is similar to a 4-terminal network.
For MOSFET- a 4-terminal small signal model
For BJT a 3 terminal small signal model
