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Pressure Sensor Lecture: ECE544 Prepared by D.J. Tegtmeier

This document provides an overview of pressure sensor theory and fabrication processes. It discusses two main types of pressure sensors - capacitive and piezoresistive - and describes the working principles and non-linearities of each. The document then outlines the key fabrication steps for a piezoresistive pressure sensor using a silicon wafer, including oxidation, photolithography, diffusion, etching, metallization, and packaging. Safety concerns are also addressed for various chemicals used such as hydrofluoric acid.

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113 views

Pressure Sensor Lecture: ECE544 Prepared by D.J. Tegtmeier

This document provides an overview of pressure sensor theory and fabrication processes. It discusses two main types of pressure sensors - capacitive and piezoresistive - and describes the working principles and non-linearities of each. The document then outlines the key fabrication steps for a piezoresistive pressure sensor using a silicon wafer, including oxidation, photolithography, diffusion, etching, metallization, and packaging. Safety concerns are also addressed for various chemicals used such as hydrofluoric acid.

Uploaded by

s_hassan_167419
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Pressure Sensor Lecture

ECE544
Prepared by D.J. Tegtmeier
Presentation Overview
1. Pressure Sensor Theory Overview
2. Pressure Sensor Process Overview
and Fabrication Theory Review
3. Express Safety Concerns for Particular
Processes
Pressure Sensor Theory
 Two Main Types of Pressure Sensors

Capacitive Sensors
• Work based on measurement of
capacitance from two parallel
plates.
• C = εA/d , A = area of plates d =
distance between.
• This implies that the response of a
capacitive sensor is inherently
non-linear. Worsened by
diaphragm deflection.
• Must use external processor to
compensate for non-linearity
Pressure Sensor Theory
Piezoresistive Sensors
 Work based on the
piezoresistive properties of
silicon and other materials.
 Piezoresistivity is a response to
stress.
 Some piezoresistive materials
are Si, Ge, metals.
 In semiconductors,
piezoresistivity is caused by 2
factors: geometry deformation
and resistivity changes.

Reference: http://en.wikipedia.org/wiki/Piezoresistance_Effect
Pressure Sensor Theory
 Our Sensor is a
Piezoresistive
Sensor based on a
Wheatstone Bridge
Configuration.
 Resistors are made
with Boron Diffusion.
Pressure Sensor Theory
 Vout =Iin*∆R
 Why use a Constant
Source Bridge? R + ∆R R - ∆R

 Produces Linear
Output
 Neglects Lead
Resistance R - ∆R R + ∆R
Pressure Sensor Process
Overview
 Initial Wafer is 525
µm thick, n-type,
<100> double-side
polished (DSP).
 Why use a <100>
DSP wafer?
 Why use an n-type
substrate?
Pressure Sensor Process
Overview – Step 1
 What should ALWAYS be step 1?
 Wafer Cleaning (RCA Clean)
 Steps
1. TCE (Tetrachloroethylene) Immersion, Acetone, Methanol
2. Base Clean - H2O/H2O2/NH4OH (5 parts,1 part,1 part)
@ 70 C to Remove Organic Contaminants
3. Dilute HF Immersion (2.5%) Why?
4. Acid Clean - H2O/H2O2/HCl (4 parts, 1 part, 1 part) @ 70 C
to remove metallic and ionic contaminants.
Pressure Sensor Process
Overview – Step 2
 Any guesses?
 Thermal Oxidation
 Wet Oxidation
Followed by Dry Si + O2 → SiO2 (Dry Oxidation)
Oxidation Si + 2H2O2 → SiO2 (Wet Oxidation)

Why do Wet Oxidation


followed by Dry?
Pressure Sensor Process
Overview – Step 3
 Photolithography for
Piezoresistive Elements
 Contact Lithography
 Use Shipley 1813
Positive Resist Si + O2 → SiO2 (Dry Oxidation)
 What happens to areas
exposed to UV light in Si + 2H2O2 → SiO2 (Wet Oxidation)
Positive Resist?
 If we want piezoresistive
holes, do we use dark-
field or light-field mask?
Pressure Sensor Process
Overview – Step 3 Cont.
 DNQ Method using
Mercury Lamp
 Diazonap. Changes to
carboxylic acid via Wolf
re-arrangement
 Carboxylic Acid is more
soluble in a base than
Novolak. So exposed
areas dissolve.
 Use TMAH (a base)
mixture to develop

Ref: http://chem.chem.rochester.edu/~chem421/polymod2.htm
Pressure Sensor Process
Overview – Step 4 - Diffusion
 Creates Resistors in
Substrate 5 Squares

3 Squares
 Three Methods
1. Solid Evap. (Tetramethyl
Borate, Boron Nitride) - Rare 1 Square

2. Gaseous – Diborane (B2H6) –


Dangerous!! 160 ppm for 15
min life threatening
3. Liquid – Our Type PBF-6MK –
Borosilicate polymer in
ethanol. Creates borosilicate
glass, boron oxide, and
unused boron.

Ref: Jaeger, Richard. “Introduction to Microelectronic Fabrication”


Pressure Sensor Process Overview –
Step 4 – Diffusion Continued
 What is a constant source diffusion?
 What is a limited source diffusion?
 What is drive-in?
 How can you get rid of boron oxide
and borosilicate glass?

Concentration
 What additional step does this

Surface
create?

Junction Depth
Pressure Sensor Process Overview –
Step 5 – Backside Photlithography
 Windows Must Be
Opened in New Oxide
For Backside Etch.
 Use Front to Backside
Alignment
 Etch Silicon Dioxide
w/BOE (HF 6:1)
 Finished when wafer is
hydrophobic (water rolls
off)
Pressure Sensor Process Overview –
Step 5 – Backside Photlith. Cont.

 Must Align Marks


from 1st Mask on
Front of Wafer to
Those on Back
 What is Split Field
Alignment?
 What is a critical
dimension?
Photo:
http://www.ee.byu.edu/cleanroom/alignment.phtml
Pressure Sensor Process Overview –
Step 6 – Backside Etch
 Need 20 µm Thick TMAH/IPA KOH

Diaphragm, therefore 25% wt. 45% wt KOH


must etch approx. 500 TMAH
µm. 17% vol IPA

 Why use TMAH instead 70oC 75oC


of KOH if KOH is faster?
{100} 12 mm/hr 21 mm/hr
{111} 0.7 mm/hr < 0.05 mm/hr
SiO2 <0.01 mm/hr < 0.20 mm/hr

Ref: Crain, Mark. “Powerpoint Thesis Defense”


Pressure Sensor Process Overview –
Step 7 – Pholith. For Contact
Windows

 Topside Alignment
 Use Shipley 1813
Postive Resist

Ref: Crain, Mark. “Powerpoint Thesis Defense”


Pressure Sensor Process Overview –
Step 8 Metal Deposition and Pattern
 Several Methods, we
use Sputtering
 2 Types (Magnetron)
-RF Sputter
-DC Sputter
 When do you use RF
sputter?
 What is a sputter etch?
 What is argon used? http://en.wikipedia.org/wiki/Sputtering
Pressure Sensor Process Overview –
Photolithography and Aluminum Etch
 First Photoresist is
deposited on metal and
patterned for desired traces
 Uses Aluminum Etch, 85-
95% Phosphoric Acid, 2-8%
Nitric Acid, and Water
 Why in the picture is there a
hole in the metal?
 What is the difference
between lift-off and metal
etch?
 Must Thermal Anneal After
Etch, Why?
Pressure Sensor Process
Overview – Wafer Testing

5 Squares
3 Squares

1 Square
Contacts Equivalent: Rs=0.65 squares
R=rlw/xj Resistive Element: 6.3 squares

Rs=r/xj R=(squares)r/xj
Pressure Sensor Process
Overview – Wafer Testing
 2 Testing Structures A B
 Van Der Pauw

-Contacts on Structure
Edge, Symmetrical
Rs = (π/ln 2)Vcd/Iab D
 Kelvin Structures

-Used for Effective Line C


Width with Rs
Weff = Iab*L*Rs/V
Pressure Sensor Process
Overview – Anodic Bonding
 Negative Polarity
 Why?
 Positive Polarity is faster.
 High Temperature, High
Voltage
 Na+ ions moved from
interface, leaving
Oxygen and forming
SiO2.
Pressure Sensor Process Overview –
Wire Bonding and Packaging
 Several Types – Ball,
Wedge, etc.
 Heated gold wire is
pressed onto surface,
melted, and then
cooled.
Process Safety
 Hydrofluoric Acid
- 20-50% Solutions
May Produce No
Immediate Symptoms
- 2.5% Produce
Hypocalcemia
-Fatal Accidents Below
10%

http://www-safety.deas.harvard.edu/advise/accident.html
Process Safety
 Protect Your
Hands!!!
 Avoid Placing Hands
Near Wafer
 Be Aware of Those
Working Near You
 Communicate

http://www.emedicine.com/emerg/topic804.htm

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