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IGBT: Insulated-Gate Bipolar Transistor: - Combination BJT and MOSFET

The insulated-gate bipolar transistor (IGBT) combines the high input impedance of a MOSFET with the low conduction losses of a bipolar junction transistor (BJT). It has high voltage and current ratings. The IGBT functions as a switch that is turned on when the gate-emitter voltage exceeds the threshold voltage, inducing a channel for electrons to flow between the emitter and collector. IGBTs are commonly used in power electronics applications due to their high efficiency during switching operations.

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572 views

IGBT: Insulated-Gate Bipolar Transistor: - Combination BJT and MOSFET

The insulated-gate bipolar transistor (IGBT) combines the high input impedance of a MOSFET with the low conduction losses of a bipolar junction transistor (BJT). It has high voltage and current ratings. The IGBT functions as a switch that is turned on when the gate-emitter voltage exceeds the threshold voltage, inducing a channel for electrons to flow between the emitter and collector. IGBTs are commonly used in power electronics applications due to their high efficiency during switching operations.

Uploaded by

Momotaro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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IGBT: Insulated-Gate Bipolar Transistor

• Combination BJT and MOSFET


– High Input Impedance (MOSFET)
– Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol

ECE 442 Power Electronics 1


Cross-Sectional View of an IGBT

Metal

Silicon Dioxide

Metal

ECE 442 Power Electronics 2


IGBT Equivalent Circuit for VGE<VT
+
IEPNP VCC
IBPNP

ICNPN
Leakage Current
ICPNP
IBNPN

Both transistors are OFF

IENPN IRBE

ECE 442 Power Electronics 3


IGBT Equivalent Circuit for VGE>VT
+
PNP transistor turns ON, VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.

NPN Transistor
becomes forward
biased at the BE,
MOS transistor conducts, drawing current
drawing current from the from the Base of
Base of the PNP transistor. the PNP transistor.

ECE 442 Power Electronics 4


Channel is Induced When VGE>VT

RMOD PNP
electrons

NPN
RBE
Induced Channel

ECE 442 Power Electronics 5


IGBT Output Characteristics

Follows an SCR
characteristic

ECE 442 Power Electronics 6


IGBT Transfer Characteristic

ECE 442 Power Electronics 7


IGBT Used as a Switch

ECE 442 Power Electronics 8


Fairchild FGA25N120AND IGBT

ECE 442 Power Electronics 9


ECE 442 Power Electronics 10
ECE 442 Power Electronics 11
ECE 442 Power Electronics 12
ECE 442 Power Electronics 13
ECE 442 Power Electronics 14
ECE 442 Power Electronics 15

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