POWER DIODES
CONTENTS
1. Introduction
2. Diode Characteristics
3. Reverse Recovery Characteristics
4. Silicon Carbide Diodes
INTRODUCTION
A diode acts as a switch to perform various
functions, such as:
Switches in rectifiers
Freewheeling in switching regulators
Charge reversal of capacitor and energy transfer
between components
Energy feedback from load to the power source
Trapped energy recovery
Power diodes are similar to p-n junction signal
diodes.
Power diodes have larger power-, voltage-
and current-handling capabilities than
those of ordinary diodes.
Frequency response or switching speed is
low compared with that of signal diodes.
Power diodes play a significant role in
power electronics
DIODE CHARACTERISTICS
A power diode is a two-terminal pn junction device.
When anode is positive with respect to the cathode,
the diode is said to be forward biased and it
conducts.
When diode conducts it has a
small forward drop voltage
(which depends on
manufacturing process and
junction temperature).
V-I characteristics of diode
Operation in breakdown region will not be destructive, provided that the
power dissipation is within the “safe level” specified by manufacturer’s
data sheet.
Diode Diode
current voltage
Thermal
Voltage
Leakage Current or Empirical constant:
Reverse Saturation Emission coefficient or
Current (10-15 to 10-6 A) Ideality Factor(1 to 2)
Boltzmann’s constant: 1.3806x10-23 J/K
Absolute temperature in Kelvin (K=273+oC)
Electron charge: 11.6022x10-19 (C)
The forward voltage drop of a power diode
is VD=1.2V at ID=300A. Assuming that
n=2 and VT=25.7 mV, find the reverse
saturation current Is .
REVERSE RECOVERY
CHARACTERISTICS
Current in forward-biased junction diode is due
to the net effect of majority and minority carriers.
Once its forward current is reduced to zero, the
diode continues to conduct due to minority
carriers that remain stored in pn-junction and the
bulk semiconductor material.
The minority carriers require a certain time to
recombine with opposite charges and to be
neutralized.
This time is called reverse recovery time of the
diode.
IF : forward current
IRR : reverse recovery current
trr : reverse recovery time, measured from zero crossing to 25% of IRR
ta : time due to charge storage in depletion region of pn-junction
tb : time due to charge storage in the bulk semiconductor material
Depends on junction temperature, rate of fall of forward current, and
forward current prior to commutation, IF.
Softness factor
(SF)
The reverse recovery time of a diode is
trr=3μs and the rate of fall of the diode
current is di/dt=30A/μs. Determine:
a) The storage charge QRR, and
b) The peak reverse current IRR.
trr=3μs and di/dt=30A/μs.
Power Diodes
General purpose
Rating up to 6000V, 4500A
High speed (or fast recovery)
Rating up to 6000V, 1100A
Reverse recovery time 0.1 to 5μs
Essential for high-frequency switching
Schottky
Low on-state voltage
Very small recover time (typically nanoseconds).
Leakage current increases with voltage rating
Rating limited to 100V, 300A
SILICON CARBIDE DIODES
Silicon Carbide (SiC) is a new material in
PE.
High performance characteristics:
Ultra low power loss and high reliability
No reverse recovery time
Ultra fast switching behavior
No temperature influence on the switching
behavior
