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CHAPTER 5
TRANSISTOR BIAS
CIRCUITS
1
OBJECTIVES
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Discuss the concept of dc biasing of
a transistor for linear operation
Analyze voltage-divider bias, base
bias, emitter bias and collector-
feedback bias circuits.
2
LECTURE OUTLINE
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1. Objectives
2. Introduction
3. DC operating point
4. Voltage-divider bias
5. Other bias methods
Base bias
Emitter bias
Collector-feedback bias
6. Summary 3
INTRODUCTION
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biasing is used to establish a fixed level of
current and voltage.
Transistor must be properly biased with dc voltage
to operate as a linear amplifier.
If amplifier is not biased with correct dc voltages
on input and output, it can go into saturation or
cutoff when the input signal applied.
4
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DC OPERATING
POINT
5
DC OPERATING POINT
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The goal of amplification in most cases is to
increase the amplitude of an ac signal without
altering it.
Improper biasing can cause distortion in the
output signal.
6
DC OPERATING POINT
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The purpose of biasing a circuit is to establish a
proper stable dc operating point (Q-point). The
goal of Q-point such that it does not go into
saturation or cutoff when an ac signal is applied.
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Q-point of a circuit: dc operating point of amplifier
specified by VCE and IC. These values are called the
coordinates of Q-point.
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Refer to figure a, given IB = 200μA and βDC=100. IC=βDCIB
so IC=20mA and
VCE VCC I C RC 10V (20mA )( 220) 10 4.4 5.6V
Figure b, VBB is increased to produce IB of 300μA and IC
of 30mA.
VCE VCC I C RC 10V (30mA )( 220) 10 6.6 3.4V
Figure c, VBB is increased to produce IB of 400μA and
IC=40mA. So, VCE is:
VCE VCC I C RC 10V (40mA )( 220) 10 8.8 1.2V
8
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9
DC OPERATING POINT-DC LOAD
LINE
Recall that the collector characteristic curves graphically
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show the relationship of IC and VCE for different IB.
When IB and IC increases and VCE decreases or vice-versa.
Each separate Q-point is connected through dc load line. At any
point along line, values of IB, IC and VCE can be picked off the
graph.
Dc load line intersect VCE axis at 10V, where VCE=VCC. This is
cutoff point because IB and IC zero. Dc load line also intersect
IC axis at 45.5mA ideally. This is saturation point because IC
is max and VCE=0.
10
EXAMPLE 1
Determine Q-point in figure below. Assume
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βDC=200.
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SOLUTION EXAMPLE 1
Q-point is defined by values of IC and VCE.
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VBB VBE 10 0.7
IB 198A
RB 47k
I C DC I B 200(198 ) 39.6mA
VCE VCC I C RC 20V (39.6mA)(330) 6.93V
Q-point is at IC=39.6mA and VCE=6.93V. Since IC(cutoff) =0,
we need to know IC(sat) to determine variation in IC can
occur and still in linear operation.
VCC 20
I C ( sat ) 60.6mA
RC 330
12
EXAMPLE 2
Figure below shows the collector characteristic
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curves and dc load line. Determine the following
a) Collector saturation current
b) VCE at cutoff
c) Q-point values of IB, IC and VCE
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SOLUTION EXAMPLE 2
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IB
IC
VCE
IC = 50mA
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VCE cutoff = 10V
IC = 25mA, IB = 250μA, VCE = 5V
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VOLTAGE-DIVIDER
BIAS
15
VOLTAGE-DIVIDER BIAS
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Voltage-divider bias is the most
widely used type of bias circuit. Only
one power supply is needed and
voltage-divider bias is more
stable(independent) than other bias
types.
dc bias voltage at base of transistor
is developed by a resistive voltage-
divider consists of R1 and R2.
Vcc is dc collector supply voltage. 2
current path between point A and
ground: one through R2 and the
other through BE junction and RE.
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VOLTAGE-DIVIDER BIAS
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If IB is much smaller than I2, bias circuit is viewed as voltage
divider of R1 and R2 as shown in Figure a.
If IB is not small enough to be neglected, dc input resistance
RIN(base) must be considered. RIN(base) is in parallel with R2
as shown in figure b.
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INPUT RESISTANCE AT TRANSISTOR
BASE
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VIN is between base and ground
and IIN is the current into base.
By Ohm’s Law,
RIN(base) = VIN / IIN
Apply KVL, VIN=VBE+IERE
Assume VBE<<IERE, so VIN≈IERE
Since IE≈IC=βDCIB,
VIN≈ βDCIBRE
IIN=IB, so
RIN(base)= βDCIBRE / IB
RIN(base) = βDCRE
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ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT
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ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT
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Total resistance from base to ground is:
R2 R IN ( base)
R2 DC R E
A voltage divider is formed by R1 and resistance from base to
ground in parallel with R2.
R2 DC R E
VB VCC
R1 R DC RE
2
If βDCRE >>R2, (at least ten times greater), then the formula
simplifies to
R2
VB VCC 20
R1 R 2
ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT
Now, determine emitter voltage VE.
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VE=VB – VBE
Using Ohm’s Law, find emitter current IE.
IE = VE / RE
All the other circuit values
I C ≈ IE
VC = VCC – ICRC
To find VCE, apply KVL:
VCC – ICRC – IERE – VCE =0
Since IC ≈ IE,
VCE ≈ VCC – IC (RC + RE) 21
EXAMPLE 3
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Determine VCE and IC in voltage-divider biased
transistor circuit below if βDC=100.
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SOLUTION EXAMPLE 3
Determine dc input resistance at base to see if it can be
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neglected.
R IN ( base) DC R E 100(560) 56k
RIN(base)=10R2, so neglect RIN(base). Then, find base
voltage R2 5.6k
VB VCC 10V 3.59V
1
R R 2 15.6 k
So, emitter voltage
VE VB VBE 3.59 0.7 2.89V
And emitter current V E 2.89
IE 5.16mA
RE 560
Thus, I 5.16mA
C
And VCE is
VCE VCC I C ( RC RE ) 10 5.16m(1.56k ) 1.95V 23
VOLTAGE-DIVIDER BIAS FOR
PNP TRANSISTOR
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Pnp transistor has opposite polarities from npn.
To obtain pnp, required negative collector supply
voltage or with a positive emitter supply voltage.
The analysis of pnp is basically the same as npn.
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a. Negative collector b. Positive emitter
Supply supply voltage
ANALYSIS OF VOLTAGE BIAS
FOR PNP TRANSISTOR
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Base voltage V R1
V EE
B R R R
1 2 DC E
Emitter voltage VE VB VBE
VEE VB I B RB I E RE VBE
By Ohm’s Law,
VEE VB VBE
IE
R RB
E DC
VC I C RC 25
And,
VEC VCC I C RC I E RE
EXAMPLE 4
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Evaluate IC and VEC for pnp transistor circuit in Figure below.
Given VEE = +15V, R1 = 63kΩ, R2 = 27kΩ, RC = 1.8kΩ, RE =
2.6kΩ, βDC =120.
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SOLUTION EXAMPLE 4
𝑹𝟏
𝑽𝑩 = 𝑽𝑬𝑬
𝑹𝟏 + 𝑹𝟐
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𝟔𝟑𝒌Ω
𝑽𝑩 = 𝟏𝟓𝑽 = 𝟏𝟎. 𝟓𝑽
𝟔𝟑𝒌Ω +𝟐𝟕𝒌Ω
𝑹𝟏 𝑹𝟐 𝟔𝟑𝒌𝜴 𝟐𝟕𝒌𝜴
𝐑𝐁 = = = 𝟏𝟖. 𝟗𝒌𝜴
𝑹𝟏 + 𝑹𝟐 𝟔𝟑𝒌𝜴+𝟐𝟕𝒌𝜴
𝑽𝑬𝑬 −𝑽𝑩𝑬 −𝑽𝑩 𝟏𝟓−𝟎.𝟕−𝟏𝟎.𝟓 𝟑.𝟖𝑽
𝐈𝐄 = 𝑹 = 𝟏𝟖.𝟗𝒌𝜴 = = 𝟏. 𝟑𝟖 𝒎𝑨
𝑹𝑬 +𝜷 𝑩 𝟐.𝟔𝒌𝜴+ 𝟏𝟐𝟎 𝟐.𝟕𝟓𝟕𝒌𝜴
𝑫𝑪
IC = IE = 1.38 mA
VEC = VEE - IERE -ICRC
VEC = 15 - (1.38mA) (2.6kΩ) - (1.38mA) (1.8kΩ)
VEC = 15 – 3.59 – 2.48 V = 8.93 V 27
EXAMPLE 5
Figure below shown the schematic with a negative supply
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voltage, determine IC and VCE for a pnp transistor circuit
with given values: R1 = 25kΩ, R2 = 60kΩ, RC = 6kΩ, RE
= 9kΩ, VCC = -12V, and βDC = 90
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SOLUTION EXAMPLE 5
𝑹𝟐
𝑽𝑩 = 𝑽𝑪𝑪
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𝑹𝟏 + 𝑹𝟐
𝟔𝟎𝒌Ω
𝑽𝑩 = (−𝟏𝟐𝑽) = −𝟖. 𝟒𝟕𝑽
𝟐𝟓𝒌Ω +𝟔𝟎𝒌Ω
𝑹𝟏 𝑹𝟐 𝟐𝟓𝒌𝜴 𝟔𝟎𝒌𝜴
𝐑𝐁 = = = 𝟏𝟕. 𝟔𝟓𝒌𝜴
𝑹𝟏 + 𝑹𝟐 𝟐𝟓𝒌𝜴+𝟔𝟎𝒌𝜴
− 𝑽𝑩 +𝑽𝑩𝑬 − −𝟖.𝟒𝟕 +𝟎.𝟕 𝑽 𝟗.𝟏𝟕𝑽
𝐈𝐄 = 𝑹 = 𝟏𝟕.𝟔𝟓𝒌𝜴 = = 𝟎. 𝟗𝟗𝟕 𝒎𝑨
𝑹𝑬 + 𝑩 𝟗𝒌𝜴+
𝟗𝟎
𝟗.𝟏𝟔𝟗𝒌𝜴
𝜷𝑫𝑪
IC = IE = 0.997 mA
VCE = VCC + ICRC + IERE
VCE = -12V + (0.997mA) (6kΩ) + (0.997mA) (9kΩ)
VCE = -12+5.98+8.97
VCE = 2.95V
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EXAMPLE 6
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Construct a complete circuit required to replace the
transistor in Figure below with a pnp transistor. Given VCC
= 10V, R1 = 78kΩ, R2 = 100kΩ, RC = 18kΩ, RE = 8kΩ.
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SOLUTION EXAMPLE 6
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OTHER BIAS
METHODS
32 BASE BIAS
EMITTER BIAS
COLLECTOR-FEEDBACK BIAS
OTHER BIAS METHODS – BASE
BIAS
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KVL apply on base circuit.
VCC – VRB – VBE = 0 or VCC – IBRB – VBE =0
Solving for IB, VCC VBE
IB
RB
Then, apply KVL around collector
circuit. VCC – ICRC – VCE = 0
We know that IC = βDCIB,
VCC VBE
I C DC 33
RB
BASE BIAS
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From the equation of IC, note that IC is
dependent on DC. When DC vary, VCE
also vary, thus changing Q-point of
transistor.
This type of circuit is beta-dependent
and very unstable. Recall that DC
changes with temperature and collector
current. Base biasing circuits are
mainly limited to switching
applications. 34
EXAMPLE 7
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Determine IB, IC and VCE for a base-biased transistor
circuit with the following values: βDC = 160, VCC = 18V,
RB = 43kΩ and RC = 190Ω.
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SOLUTION EXAMPLE 7
𝑉𝐶𝐶 −𝑉𝐵𝐸 18−0.7 17.3𝑉
𝐼𝐵 = = = = 402.33𝜇𝐴
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𝑅𝐵 43𝑘 43𝑘
𝑉𝐶𝐶 −𝑉𝐵𝐸 18−0.7
𝐼𝐶 = 𝛽𝐷𝐶 = 160 = 64.37𝑚𝐴
𝑅𝐵 43𝑘
VCE = VCC – ICRC
VCE = 18 – (64.37mA)(190Ω)
VCE = 18 -12.23
VCE = 5.77V
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EMITTER BIAS
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37
Npn transistor with emitter bias
EMITTER BASE
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This type of circuit is independent of βDC making it as stable as the
voltage-divider type. The drawback is that it requires two power
suppliers
Apply KVL and Ohm’s Law,
IBRB + IERE + VBE = VEE IE
IB
Since IC ≈ IE and IC = βDCIB, DC
VEE VBE
IE
Solve for IE or IC, RB
( ) RE
Voltage equations for emitter base circuit,
VE = VEE - IERE
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VB = VE + VBE
VC = VCC - ICRC
EMITTER BASE
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Apply KVL and Ohm’s Law,
IBRB + IERE + VBE = VEE
Since IC ≈ IE and IC = βDCIB,
IE
IB
DC
Solve for IE or IC,
VEE VE
IE
RE
39
EXAMPLE 8
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Calculate IE and VCE for the circuit below using VE = -1V
and IC = IE, RB = 47kΩ, RC = 4.7kΩ, RE = 10kΩ, VCC = 15V
and VEE = -15V
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SOLUTION EXAMPLE 8
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𝑉𝐸 = −1𝑉
−𝑉𝐸𝐸 + 𝑉𝐸 − −15 − 1 14
𝐼𝐸 = = = = 1.4𝑚𝐴
𝑅𝐸 10𝑘Ω 10𝑘Ω
𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 = 15𝑉 − 1.4𝑚𝐴 4.7𝑘Ω = 8.4𝑉
𝑉𝐶𝐸 = 𝑉𝐶 − 𝑉𝐸 = 8.4 − −1 = 9.4𝑉
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COLLECTOR-FEEDBACK BIAS
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Collector-feedback bias is
kept stable with negative
feedback, although it is not
as stable as voltage-
divider or emitter. With
increases of IC, VC decrease
and causing decrease in
voltage across RB, thus IB
also decrease. With less IB,IC
go down as well.
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ANALYSIS OF COLLECTOR-
FEEDBACK CIRCUIT
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By Ohm’s Law, VC VBE
IB
RB
Collector voltage with assumption IC>>IB.
VC = VCC – ICRC
And IB = IC / βDC
So, collector current equation
VCC VBE
IC
RC RB / DC
Since emitter is ground, VCE = VC.
VCE = VCC - ICRC 43
EXAMPLE 9
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Determine IC, VB, VC and Power rating in figure below.
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SOLUTION EXAMPLE 9
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𝑉𝐶𝐶 −𝑉𝐵𝐸 3𝑉−0.7𝑉 2.3𝑉 2.3𝑉
𝐼𝐶 = 𝑅𝐵 = 33𝑘 = = = 1.06𝑚𝐴
𝑅𝐶 + 1.8𝑘+ 1.8𝑘+366.67 2.17𝑘
𝛽𝐷𝐶 90
𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 = 3𝑉 − 1.06𝑚𝐴 1.8𝑘 = 3𝑉 − 1.9𝑉 = 1.1𝑉
𝐼𝐶 1.06𝑚𝐴
VB = VC – VBE @ 𝐼𝐵 = = = 11.78μ𝐴
𝛽𝐷𝐶 90
VB = 1.1V – 0.7V VB = IBRB
VB = 0.4V VB = (11.78μA)(33k)
VB = 0.39V
P = IC2RC @ P = ICVRC
P = (1.06mA)2(1.8kΩ) P = (1.06mA) (1.06mA)(1.8kΩ)
P = 2.02 mW P = 2.02 mW 45
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SUMMARY
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6. SUMMARY
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The purpose of biasing is to establish a
stable operating point (Q-point).
The dc load line helps to establish the Q-
point for a given collector current.
Q-point is used to avoid amplifier goes into
saturation and cutoff
The linear region of a transistor is the
region of operation within saturation and
cutoff.
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6. SUMMARY
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Voltage-divider bias is most widely used
because it is stable and uses only one
voltage supply.
Base bias is very unstable because it is β
dependent.
Emitter bias is stable but require two
voltage supplies.
Collector-back is relatively stable when
compared to base bias, but not as stable 48
as voltage-divider bias.
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