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Forward and Reverse Bias of PN Junction

A p-n junction diode has two types of bias: forward and reverse. In forward bias, the p-type semiconductor is connected to the positive terminal and the n-type to the negative terminal, causing majority charge carriers to allow a large current flow across the thin depletion region. In reverse bias, the connections are reversed, causing the thick depletion region to block most current flow except for a small leakage current of minority carriers, making the diode act as an open switch. The document provides details on how the depletion region and current flow differ between forward and reverse bias configurations of a p-n junction diode.

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Hasin Ishrak Hisham
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1K views9 pages

Forward and Reverse Bias of PN Junction

A p-n junction diode has two types of bias: forward and reverse. In forward bias, the p-type semiconductor is connected to the positive terminal and the n-type to the negative terminal, causing majority charge carriers to allow a large current flow across the thin depletion region. In reverse bias, the connections are reversed, causing the thick depletion region to block most current flow except for a small leakage current of minority carriers, making the diode act as an open switch. The document provides details on how the depletion region and current flow differ between forward and reverse bias configurations of a p-n junction diode.

Uploaded by

Hasin Ishrak Hisham
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Forward and Reverse Bias

of pn junction

NAME : HASIN ISHRAK


ID: 18-37026-1
SUBJECT: ELECTRONIC DEVICES
SECTION: (J)
Pn junction diode

 A p-n junction is an interface or a boundary between two semiconductor material types,


namely the p-type and the n-type, inside a semiconductor. The p-side or the positive side
of the semiconductor has an excess of holes and the n-side or the negative side has an
excess of electrons.
 In PN junction diode, N is at right and P is at left.
 Majority carriers

N region – electrons
P region-- holes
A single p-n junction has two different types
of bias:

 Forward bias: The positive terminal of the voltage potential is connected to the p-type
while the negative terminal is connected to the n-type.

 Reverse bias: The negative terminal of the voltage potential is connected to the p-type and
the positive is connected to the n-type.
Forward bias of the PN junction:

When the p-type is connected to the positive terminal of


the battery and the n-type to the negative terminal then the
p-n junction is said to be forward-biased. When the p-n
junction is forward biased, the built-in electric field at the
p-n junction and the applied electric field are in opposite
directions. When both the electric fields add up the
resultant electric field has a magnitude lesser than the
built-in electric field. This results in a less resistive and
thinner depletion region. The depletion region’s resistance
becomes negligible when the applied voltage is large. In
silicon, at the voltage of 0.6 V, the resistance of the
depletion region becomes completely negligible and the
current flows across it unimpeded.
Reverse bias of the PN junction:

When the p-type is connected to the negative terminal of


the battery and the n-type is connected to the positive side
then the p-n junction is said to be reverse biased. In this
case, the built-in electric field and the applied electric field
are in the same direction. When the two fields are added,
the resultant electric field is in the same direction as the
built-in electric field creating a more resistive, thicker
depletion region. The depletion region becomes more
resistive and thicker if the applied voltage becomes larger.
Comparison chart:

Parameter Forward Biasing Reverse Biasing


Current flow Due to majority charge carriers. Almost negligible current due to minority charge
carriers.

Connection Supplied P region is connected to positive and n region is P region is connected to negative and n region is
connected to negative side of the battery. connected to positive terminal of the battery.

Depletion width Thin Thick


Magnitude of current High Low (only leakage current)

Operates as Closed switch Open switch


Barrier potential Less More
Functioning Acts as conductor after overcoming potential barrier Acts as insulator and almost negligible current flows

Resistance offered It offers low resistance. It offers high resistance.


Key Differences between Forward Biasing
and Reverse Biasing:

 It is basically understood that a forward biased voltage permits a large flow of


current thus operates as a closed switch. While a  reverse biased voltage does not allow
sufficient current flow hence fundamentally termed as an open switched condition.
 In case of forward applied potential, the PN junction device offers very low resistance. On
the other side, in case of reverse applied voltage, pn junction device offers very high
resistance.
 On applying a forward voltage to a PN junction device the depletion width decreases with
the increase in supplied voltage. While, when reverse biasing is provided to a PN junction
device then the width of the depletion region increases with supplied voltage.
Thank You

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