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Understanding Bipolar Junction Transistors

This document summarizes the operation of a P-N junction and bipolar junction transistor (BJT). It describes how combining two back-to-back P-N junctions forms a BJT, with the central region acting as the base. Forward biasing the first junction injects holes into the base, while reverse biasing the second junction sweeps the holes out into the collector region. It introduces common BJT configurations and biasing modes, and defines the base transport factor alpha which determines the current gain of the transistor.

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Aliza Tariq
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262 views12 pages

Understanding Bipolar Junction Transistors

This document summarizes the operation of a P-N junction and bipolar junction transistor (BJT). It describes how combining two back-to-back P-N junctions forms a BJT, with the central region acting as the base. Forward biasing the first junction injects holes into the base, while reverse biasing the second junction sweeps the holes out into the collector region. It introduces common BJT configurations and biasing modes, and defines the base transport factor alpha which determines the current gain of the transistor.

Uploaded by

Aliza Tariq
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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RECALL P-N JUNCTION

P N N P

W W + -
+ -
Vappl > 0 Vappl < 0

Forward bias, + on P, - on N Reverse bias, + on N, - on P


(Shrink W, Vbi) (Expand W, Vbi)

Allow holes to jump over barrier Remove holes and electrons away
into N region as minority carriers from depletion region

I I

V V
SO IF WE COMBINE THESE BY FUSING THEIR
TERMINALS…

P N N P

W W +
+ - -
Vappl > 0 Vappl < 0

Holes from P region (“Emitter”) of 1st PN junction


driven by FB of 1st PN junction into central N region (“Base”)

Driven by RB of 2nd PN junction from Base into P region of


2nd junction (“Collector”)

• 1st region FB, 2nd RB

• If we want to worry about holes alone, need P+ on 1st region

• For holes to be removed by collector, base region must be thin


BIPOLAR JUNCTION TRANSISTORS:
BASICS
+ -

IE IC
- + IB

IE = I B + I C ………(KCL)

VEC = VEB + VBC ……… (KVL)


BJT CONFIGURATIONS

ECE 663
GAIN
CONFIG
BIPOLAR JUNCTION TRANSISTORS:
BASICS

+ -

IE IC
- + IB
BIPOLAR JUNCTION TRANSISTORS:
BASICS

Bias Mode E-B Junction C-B Junction


Saturation Forward Forward

Active Forward Reverse


Inverted Reverse Forward
Cutoff Reverse Reverse
PNP TRANSISTOR
AMPLIFIER ACTION
INPUT VOLTAGE SMALL,
IN (small)
AND OUTPUT VERY LARGE

OUT (large)
BASE TRANSPORT FACTOR
IE IC
IEp ICp
C
E

IB

IC
 
IE
Can all injected holes
make it to the collector?
COMMON BASE DC CURRENT GAIN -
PNP
Common Base – Active Bias mode:

IC = IE + ICB0

IC = Cmajority+ ICBO
ECE 663
PNP BJT COMMON BASE
CHARACTERISTIC CURVES

1.input curve
2.output curve

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