ECE001A: General Seminar
Hall Effect
By:
Kapil Zandu
B.Tech MBA (Dual Degree)-ECE
Reg. no.-11002596
ROLL NO.-> RE6001A05
Basic Idea
• Discovered in 1879 by Edwin H. Hall and
published in the paper "On a New Action of the
Magnet on Electrical Current"
• Noticed that when a magnetic field was
applied to a current-carrying thin metal strip, a
small transverse voltage appeared
• Provides a simple method for accurately measuring
carrier density, electrical resistivity, and the mobility
of carriers in semiconductors
Hall effect
When a current-carrying conductor is placed in a magnetic field, a potential
difference is generated in a direction perpendicular to both the current and the
magnetic field.
This phenomenon, first observed by Edwin Hall, is known as the Hall effect. It
arises from the deflection of charge carriers to one side of the conductor as a
result of the magnetic force they experience. The Hall effect gives information
regarding the sign of the charge carriers and their density; it can also be used to
measure the magnitude of magnetic fields.
Physical Phenomena
• When an electron moves in a direction perpendicular to an applied
magnetic field, it experiences a force (Lorentz force) acting normal
to both directions and moves in response to this force.
– Constant current I (flows
Lorentz Force Coordinate
along x-axis) in the presence
F=-ev x B System
of magnetic field B (z-axis)
B z
y causes Lorentz force F (y-
axis)
v B x
V=0 – Causes electron paths to
F
bend towards negative y-axis
I – Charge builds up on the
e-
surface of the side of sample,
d and the potential drop across
the two sides of the sample is
V-VH known as the Hall voltage (VH)
Hall Voltage
The voltage difference across the sample is known as Hall Voltage.
It can be measured by connecting a sensitive voltmeter or potentiometer
connected across the sample
Lorentz Force
In physics, the Lorentz force is the force on a point charge due
to electromagnetic fields. It is given by the following equation in terms of the
electric and magnetic fields:
F=q [E + (v x B)]
Where:
F is the force (in newtons)
q is the electric charge of the particle (in coulombs)
E is the electric field (in volts per metre)
v is the instantaneous velocity of the particle (in metres per second)
× is the vector cross product
B is the magnetic field (in teslas)
When electrons flow without
magnetic field...
t semiconductor slice
+ _
d
I I
When the magnetic field is turned
on ...
I qBv
B-field
As time goes by...
high
potential
qE
low
qBv = qE potential
Finally...
VH
I
B-field
Important Equations
• The number of conduction electrons per unit volume (N) is found by:
Ix Bz
N
edV H
Where Ix= current, Bz= magnetic field, d=sample thickness, e= elementary charge,
VH=Hall voltage in the y-direction
• or Hall constant, (RH) is often defined:R 1
The Hall Resistance, H
Ne
Ix Bz B
• Thus, the Hall voltage (VH) can be written as: VH Ix R H z
Ned d
VH 1
• Then, the Hall mobility (m) can be determined:
RsIx Bz RsNde
Where Rs is the sheet resistance, easily determined by the van der Pauw method
Hall Measurement Strengths
• Usefulness:
– Resistance and conductance were used for characterization in the early
1800’s, but they are influenced by sample geometry and are not material
properties.
– For comparison between samples with different geometries, resistivity and
conductivity were used. However, they are still not material properties.
– The Hall Effect allows measurement of carrier density and mobility, which
are material properties, giving a deeper level of understanding of
materials.
• Advantages:
– Simple, low-cost, fast turn-around
time
– High sensitivity: Can measure
carrier concentrations in doped
silicon of <1012 e-/cm3
Hall Measurement Limitations
• Sample geometry:
– Sample uniformity
– Accurate thickness determination
– Lateral dimensions must be
large compared to contact size
and sample thickness
• Ohmic contacts:
– Symmetric placement on sample
– Size
– Quality
• Thermomagnetic effects
• Photoconductive and photovoltaic effects
• Accurate measurement of sample temperature, intensity of magnetic field,
electrical current, and voltage
Technological Applications
• Hall Effect sensors for sensing position,
motion, magnetic fields fluid flow,
power, or pressure
– Long life (30 billion operations, in some tests)
– High speed operation (> 100 kHz possible)
– Highly repeatable operation
– Stationary operation (no moving parts)
– Compatible input/output for logic devices)
Hall effect current sensor.
• Industrial and commercial use: Dimensions≈ 30x15x11mm.
– Electronics industry: Manufacturing low-noise transistors, electronic
compasses
– Automobile Industry: Fuel injection systems and anti-lock brake systems
– Computers: Brushless DC rotors and disk-drive index sensors
In general:
• Hydraulic controls
• Integration into magnetic shields to reduce stray fields
• Inspect tubing or pipelines for corrosion or pitting
Yo u
an k
Th
All your sensible quarries will be
possible entertained.
