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Hall Effect Experiment and Coefficient Determination

This document describes an experiment to determine the Hall coefficient and carrier concentration of a semiconductor material using the Hall effect. The experiment involves measuring the Hall voltage across a sample when a current is passed through it under a perpendicular magnetic field. The Hall coefficient is then calculated using the measured Hall voltage, current, and magnetic field values, and the carrier concentration is derived from the Hall coefficient.

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0% found this document useful (1 vote)
3K views28 pages

Hall Effect Experiment and Coefficient Determination

This document describes an experiment to determine the Hall coefficient and carrier concentration of a semiconductor material using the Hall effect. The experiment involves measuring the Hall voltage across a sample when a current is passed through it under a perpendicular magnetic field. The Hall coefficient is then calculated using the measured Hall voltage, current, and magnetic field values, and the carrier concentration is derived from the Hall coefficient.

Uploaded by

naveen
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
  • Introduction to Hall Effect
  • Applications of Hall Effect
  • Experiment Aim and Apparatus
  • Experimental Procedure
  • Observations and Measurements
  • Precautions and Results
  • Viva Questions

Applied Physics Lab

I B. Tech. I semester (2000BS06)

[Link]
Assistant Professor
EXPERIMENT 5
HALL EFFECT-
DETERMINATION OF
HALL COEFFICIENT
Hall Effect:
When a conductor carrying a current placed
in a transverse magnetic field, an electric field
is produced inside the conductor in a direction
normal to both the current and the magnetic
field. This phenomena is known as ‘Hall effect’
and the generated voltage is called ‘Hall
voltage’.
Hall Effect:
N- type semiconductor
Theory :

If a current carrying conductor placed in a


perpendicular magnetic field, a potential
difference will generate in the conductor
which is perpendicular to both magnetic
field and current.
Theory :
This phenomenon is called Hall Effect. In
solid state physics, Hall effect is an
important tool to characterize the materials
especially semiconductors.
It directly determines both the sign and
density of charge carriers in a given sample.
Consider a rectangular conductor of
thickness t kept in XY plane.

An electric field is applied in X-


direction using Constant Current
Generator (CCG), so that current I flow
through the sample.
 
If w is the width of the sample and t is
the thickness.

There fore current density is given by

Jx = (1)
 
We know that a current flows in response to an
applied electric field with its direction as
conventional and it is either due to the flow of
holes in the direction of current or the movement
of electrons backward.
In both cases, under the application of magnetic
field the magnetic Lorentz force,

(1)
In steady state condition, the magnetic force
is balanced by the electric force.
Mathematically we can express it as

Eq = Bqv
For electron, q = e,

eE = evB (2)
 
the current 'I' can be expressed as

I = neAv

Voltage, VH = Ew = vBw =

VH =
 
VH=

Where RH is called the Hall coefficient


 
RH=

 
RH=
Applications of Hall Effect:
Hall probes are often used as
magnetometers.
Hall effect devices produce a very slow
signal level. They need amplifiers.
Hall effect sensors are used to time the
speed of wheels and shafts.
For contact less measurement of DC Hall effect current
sensor with internal

current in current transformers, Hall Effect integrated circuit


amplifier.

sensor is used.
[Link], Apparatus

2. Formula
1

2 3. Circuit diagram

3 4. Model graph,
Calculations
4
5. Precautions, Results
5
and Viva questions
Aim :
1. To determine the Hall voltage developed
across the sample material.

2. To calculate the Hall coefficient and the


carrier concentration of the sample material.
Apparatus :
• Two solenoids
• Constant current supply
• Four probe
• Digital gauss meter
• Hall effect apparatus (which consist of Constant
Current Generator (CCG)
• digital milli voltmeter and Hall probe).
Procedure :
• Connect ‘Constant current source’ to the
solenoids.
• Four probe is connected to the Gauss
meter and placed at the middle of the
two solenoids.
• Switch ON the Gauss meter and Constant
current source.
Procedure :
• Vary the current through the solenoid from
1A to 5A with the interval of 0.5A, and note
the corresponding Gauss meter readings.

• Switch OFF the Gauss meter and constant


current source and turn the knob of
constant current source towards minimum
current.
• Fix the Hall probe on a wooden stand.

• Connect green wires to Constant Current


Generator and connect red wires to milli
voltmeter in the Hall Effect apparatus

• Replace the Four probe with Hall probe and


place the sample material at the middle of
the two solenoids.
Switch ON the constant current source and
CCG.

Carefully increase the current I from CCG and


measure the corresponding Hall voltage VH.
Repeat this step for different magnetic field B.

Thickness t of the sample is measured using


screw gauge.
 
Hence calculate the Hall coefficient RH using
the equation
 
R H=

Then calculate the carrier concentration n.


using equation
R H=
Observation Tables :
Precautions:

1. Hall Voltage should be measured very carefully and


accurately.

2. Distance between pole pieces of Electromagnet should


not be changed during the whole experiment.

3. Current passing through semiconductor slab should be


strictly within permissible limit.
Result :

Hall coefficient of the material


= .........................

Carrier concentration of the material =


……………………
Viva Questions:
[Link] is Hall Effect?

[Link] is Hall Voltage?

[Link] are the uses of finding the Hall coefficient?

4. For a material, if the Hall coefficient has positive sign,


what do you infer?

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