THEORETICAL STUDY OF MULTI

INTERMEDIATE BAND QUANTUM

DOT SOLAR CELL
PRESENTED BY

Mohammad Kawser Alam Bibekananda Nath

ID no.: 1502009 ID no.: 1502013

SUPERVISED BY
Prof. Dr. Mahmud Abdul Matin Bhuiyan
Professor
Department of EEE, CUET
 Objectives

1. To investigate 3rd generation solar cell.

2. To design and model of Intermediate Band Quantum Dot Solar
Cells.
3. To simulate the designed cell using MATLAB software.
4. Numerical analysis for higher efficiency of designed cell.

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 Motivation
• Power crisis has been increasing day by day in the World as well as
in Bangladesh. So, it is crying need to produce energy from
renewable sources like solar, wind, tidal power, geothermal, biogas,
etc.

• Photovoltaics is the technological symbol for a future sustainable

energy supply system in many countries.

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 Conventional Solar Cell Working
One of the intrinsic loss mechanisms that limits the efficiency of
photovoltaic conversion is - single gap solar cell can not absorb sub-
band gap photons ,their energy being wasted.

Conduction Band

Valence Band

Figure No 1: Band Diagram of Conventional Solar Cell

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 Solar cell efficiency table

Source: Solar cell efficiency tables (Version 55)

Martin A. Green| Ewan D. Dunlop | Jochen Hohl‐Ebinger | Masahiro Yoshita |
Nikos Kopidakis | Anita W.Y. Ho‐Baillie
5
 Quantum Dot Intermediate Band
Solar Cell

Quantum Dot Solar Cell:

Figure No 2: Simple QDIBSC and Conventional Solar Cell

Source: https://sinovoltaics.com/learning-center/solar-cells/quantum-dot-solar-cell/
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 What is Quantum Dot

A quantum dot is a nanometer sized

particle of a low band gap material
surrounded by a material with larger band
gap.

If many quantum dots are placed closed to

each other in a lattice one or more
intermediate bands can be formed.

Figure No 3: Quantum Dot

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 Why Quantum Dot Intermediate Band solar
cell….
• In single junction solar cell efficiency is very low in case of first and second
generation solar cells.
• If we use QD to grow i-region in p-i-n solar cell then efficiency increases
significantly.
• That's why we have chosen quantum dot intermediate band solar cell.

Source: ISSUES IN THE PHYSICAL MEASUREMENT OF THE INTERMEDIATE BAND EFFECT. S. Bremner1, K, Ghosh3, N.
Ekins-Daukes2, C. Honsberg3, Stephen Goodnick3
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 How IB is produced within Barrier
• The intermediate band (IB) is an electronic band located within the
semiconductor band gap, separated from the conduction and the
valance band by a null density of states.
• There are three ways by which intermediate bands can be formed
within the barrier material band gap. These are:
1. Use of Quantum Dots periodic arrays.
2. Use of Highly Mismatched Alloys.
3. Use of Hyper doped Silicon.

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 How Intermediate Band is produced Using QD

• If the number of QDs is increased and arranged in a periodic lattice, the

energy levels will split and spread out into intermediate bands.
• Used to exploit the energy of below band gap energy photons.

Source: https://www.researchgate.net/figure/a-Schematic-band-diagram-of-a-IB-solar-cell-highlighting-the-sub-bandgap-
optical_fig1_323767448
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 How IB works for Higher Efficiency…
Intermediate band solar cell:

Conduction Band

3rd IB

2nd IB

1st IB

Valence Band

Fig. 4: Working of QDIBSC

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 Followed Methodology
Investigation solar cell

Theoretical Investigation of 3rd generation solar cell

Selection of appropriate material

Identify the design constraints

Design a MATLAB app

Simulate the mathematical model in MATLAB

Analysis the performance

9
 Material Used for Barrier/QD

Source : Quantum Dot Intermediate Band Solar Cells: Design Criteria and Optimal Materials. A Thesis by
Steven Evans Jenks, Drexel University, USA,2012(April).
Department of EEE, CUET 13
 Which material we used and Why

• For the QD-IBSC containing intermediate band under unconcentrated

light, the effective band gap must be in the range of 2.06 eV ≤ Eg ≤
2.71 eV and under fully concentrated light band gap must be lower for
better efficiency which is 1.63 eV ≤ Eg ≤ 2.31eV for an efficiency ≥
62%. For dot material the band gap should be small [3].
• We have used AlPSb as the barrier as it’s band gap ranges from
1.456eV-2.38eV for different phosphorus content.
• We have used InAs0.98N.02 as the dot material.The reason behind taking
Nitrogen content as 2% is that in this value the dot band gap has a
value 0f 0.25eV [3] .
• The AlPSb/InAsN combination is most flexible in the sense
that its design is suitable for different dot structures [3].

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Proposed Structure of Intermediate Band
Solar cell..

Glass
TCO(Aluminium Doped Zinc Oxide)

n-type layer AlPxSb(1-x)(0.2µm)

InAs0.98N.02/AlPxSb(1-x) QDs i-region

 (0.239 µm)

p-type layer AlPxSb(1-x)(0.3 µm)

Metal Contact(Cu)
 
Figure No 4: Proposed Model
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 Mathematical Model Representation

Figure No 5: Minibands formation in superlattice structure of Kronig-Penney Potential[1]

Eigen energies of the bound stationary states within the confining potential
are the location of mini bands formed by periodic array of QDs. In case
where more than one bound energy levels exists within single QD it is
possible to form more than one bands provided they are separated by at
least 0.5eV[6].
Calculations Of Band Properties Of A Quantum Dot Intermediate Band Solar Cell
[6]

With Centrally Located Hydrogenic Impurities.

A Thesis by Michael Yehuda Levy, Georgia University Of Technology ,
Georgia ,2004(July).

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 Mathematical Model Representation (Continue)

•  

(1)

Abou El-Maaty Aly, and Ashraf Nasr .

Theoretical Study of One-Intermediate Band Quantum Dot Solar Cell
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 Mathematical Model Representation (Continue)

This model assumes that the wave travelling of charge carrier is in the
positive 𝑥 direction for one-dimensional only . Therefore, the
mathematical form of the repeating unit of the potential is

(2)

The Schrodinger equation for this model is

(3.1)

(3.2)

Abou El-Maaty Aly, and Ashraf Nasr .

Theoretical Study of One-Intermediate Band Quantum Dot Solar Cell
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 Mathematical Model Representation (Continue)
• According to Kronig-penny model solution of schrodinger equation
has already been accomplished using Lazarenkova and Balandin
approximation in the following form [1].

(4)
where,

mB = Effectivemass of electron of AlPSb(barrier). Its value changes with

Phosphorus content and typically lies within 0. l46m0 to 0.21053m0 for

phosphorus content ranges from (0.1-0.9),

mQ = Effective mass of electron of InAs 0.98N 0.02 . Its value is 0.0279 m0 ,

LQD = QD size . It changes from (2-6)nm.

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LB = It is inter dot distance fixed to 2.6nm.
 Mathematical Model Representation (Continue)

• The left-hand side of the equation (4) can be represented by F(ε) for all
values of the ratio of total energy of electrons over conduction band
offset: (ε = E/VO ) [1]. Consider ,

(5)

Abou El-Maaty Aly, and Ashraf Nasr .

[1]

Theoretical Study of One-Intermediate Band Quantum Dot Solar Cell

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MATLAB Code For Determining Bands Position
And Width Of Bands

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MATLAB Code For Determining Bands Position And
Width Of Bands (Continue)

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MATLAB Code For Determining Bands Position And
Width Of Bands (Continue)

Figure No 6: Plot of LHS Equation 5 to determine intermediate bands

position.

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MATLAB Code For Determining Bands Position And
Width Of Bands (Continue)

Figure No 7: Allowed E-k states in one dimensional crystal for phosphorous

content 0.92
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MATLAB Code For Determining Bands Position And
Width Of Bands (Continue)

Figure No 8: Allowed E-k states for free electrons energy for

phosphorus content 0.92
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 Mathematical Model Representation (Continue)
Short Circuit Current Density Calculation:
There are two conditions to obtain the balance analysis when the IBQDSC
operates [5].
• The current density coming to the IBs should be equal to the current
density leaving them, i.e.,
JVI1+JVI2+JVI3 = JCI1 +JCI2+JCI3
• The chemical potential (μCV) should be equal to the sum of the quasi-
Fermi levels, i.e.,
µCV = µVI1 + µI1I2 + µI2I3 + µCI3
From this discussion, the total induced current density (JT) in IBQDSC can
be expressed as-
JT = JCV + JCI1 + JCI2 + JCI3

Aly, A. E. M., & Nasr, A. (n.d.). The effect of multi-intermediate bands on

[5]

the behavior of an InAs 1 — quantum dot solar cell. 042001.

https://doi.org/10.1088/1674-4926/36/4/042001
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 Mathematical Model Representation (Continue)

The induced current density (Jcv) in the traditional SC generates when the
electrons transition from the VB to the CB as follows[3]:

where , q = Electron charge;

ɛ = Geometric factor (2.16 x 10—5);
SC = Solar concentration, in which it is equal to 1 at the earth and 1/ɛ at the

surface of the sun;

ECV = Bandgap energy for barrier semiconductor material;

Ts = 6,000 K is the temperature at the surface of the sun;

Ta = 300 K is the temperature at the earth; and

μCV = Chemical potential.

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 Mathematical Model Representation (Continue)

For the 3IBs QDSC, JCI1 and JCI2 are the density of currents generated when the

electrons transition from IBs to CB [3], and they are

Quantum Dot Intermediate Band Solar Cells: Design Criteria and Optimal Materials. A Thesis
[3]

by Steven Evans Jenks, Drexel University, USA,2012(April).

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 Mathematical Model Representation (Continue)

Open circuit voltage is calculated by using the value of Jsc and Jo in the
following equation:

The value of bandgap with phosphorus content is obtained from the following
equation,

Where,
Bandgap of AlP, Eg,AlP 2.45 eV

Bandgap of AlSb, Eg,AlSb 1.161 eV

Bowing parameter of AlPSb, b 2.7

Reverse Saturation Current, Jo 6.59e-14 mA

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Mathematical Model Representation (Continue)

Figure No 09 : Effect Of Phosphorus Content On Barrier

Bandgap
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 Mathematical Model Representation (Continue)

•  

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 Data Table
Phosphorous Band gap (Barrier Dot Position Position Position width width width Jsc Voc FF Efficiency
content material size of first of of third of First of of
electron band second band band second third
effective band band band
mass)mb

0.96 2.313 0.20911*mo 2 0.3225 1.128 1.498 0.0014 0.052 0.179 139.3658 .9887 .8737 75.85
      2.5 0.2615 1.162 1.57 0.0035 0.105 0.424 133.7293 .9877 .8725 72.61
      3 0.2171 1.144 1.435 0.0064 0.271 0.451 123.5809 .9856 .8298 63.68
      3.5 0.1833 1.046 1.453 0.0098 0.178 0.364 118.5637 .9845 .8199 60.30
      4 0.1567 0.9102 1.53 0.0134 0.1268 0.322 115.6754 .9839 .8190 58.73
      4.5 0.1353 0.7812 1.572 0.0168 0.104 0.352 111.72 .9830 .8093 56
      5 0.1179 0.6718 1.551 0.0196 0.0953 0.468 105.49 .9815 .8044 52.47
      5.5 0.1036 0.5815 1.463 0.0222 0.0917 0.391 96.45 .9792 .8016 47.70
      6 0.1 0.5073 1.338 0.0158 0.0887 0.289 86.355 .9763 .8014 42.57
0.94 2.248 0.20768*mo 2 0.3233 1.129 1.5 0.0015 0.052 0.182 136.0898 .9500 .9131 74.37
      2.5 0.2622 1.162 1.572 0.0035 0.107 0.429 140.2876 .9508 .9160 76.98
      3 0.2176 1.144 1.436 0.0066 0.219 0.454 130.0237 .9488 .8993 69.9
      3.5 0.1837 1.046 1.456 0.01 0.179 0.366 124.8971 .9478 .8592 64.08
      4 0.157 0.9102 1.533 0.0136 0.1278 0.325 121.6857 .9471 .8448 61.34
      4.5 0.1356 0.7812 1.574 0.017 0.1061 0.363 117.347 .9462 .8419 57.89
      5 0.1184 0.6721 1.552 0.0196 0.0959 0.472 110.827 .9447 .8395 55.38
      5.5 0..1036 0.5817 1.464 0.0226 0.0913 0.391 101.602 .9424 .8344 50.34
      6 0.1 0.5073 1.338 0.0161 0.0913 0.29 91.239 .9396 .8334 45.02

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 Data Table (Continue)
Phosphorous Band gap (Barrier Dot Position Position Position width width width Jsc Voc FF Efficiency
content material size of first of of third of First of of
electron band second band band second third
effective band band band
mass)mb

0.92 2.184 0.20626*mo 2 0.3241 1.129 1.503 0.0015 0.053 0.184 142.6956 .9137 .9571 78.62
      2.5 0.2628 1.163 1.574 0.0037 0.108 0.433 146.7275 .9144 .9575 80.94
      3 0.2182 1.144 1.437 0.0066 0.222 0.457 136.3634 .9125 .9505 74.52
      3.5 0.1841 1.046 1.459 0.0102 0.18 0.368 131.1403 .9115 .9380 70.64
      4 0.1574 0.9102 1.536 0.0138 0.1288 0.328 127.5864 .9108 .8979 65.74
      4.5 0.1359 0.7815 1.578 0.0172 0.106 0.365 122.97 .9098 .8954 63.12
      5 0.1186 0.6723 1.554 0.02 0.0975 0.475 116.113 .9083 .8848 58.79
      5.5 0.1039 0.5817 1.464 0.0226 0.0939 0.392 106.63 .9061 .8728 53.12
      6 0.1 0.5077 1.338 0.0165 0.0916 0.291 96.1232 .9035 .8688 47.4
0.9 2.124 0.20483*mo 2 0.325 1.13 1.506 0.0015 0.054 0.186 148.8893 .8796 .9861 81.36
      2.5 0.2635 1.164 1.576 0.0037 0.109 0.438 152.6585 .8802 .9866 83.52
      3 0.2187 1.145 1.438 0.0068 0.223 0.461 142.3203 .8784 .9854 77.61
      3.5 0.1845 1.046 1.461 0.0104 0.181 0.371 136.9052 .8774 .9845 74.53
      4 0.1577 0.9102 1.539 0.014 0.1298 0.330 133.0591 .8767 .9813 72.12
      4.5 0.1362 0.7816 1.578 0.0173 0.1069 0.371 127.95 .8756 .9340 65.93
      5 0.1185 0.6721 1.555 0.0204 0.0983 0.481 120.93 .8742 .9226 61.45
      5.5 0.104 0.5819 1.468 0.0231 0.0942 0.389 111.574 .8721 .9041 55.42
      6 0.1 0.5077 1.338 0.017 0.0928 0.292 100.741 .8695 .9019 49.77

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 Data Table (Continue)
Phosphorous Band gap (Barrier Dot Position Position Position width width width Jsc Voc FF Efficiency
content material size of first of of third of First of of
electron band second band band second third
effective band band band
mass)mb

0.89 2.094 0.20406*mo 4 0.158 0.9109 1.541 0.0141 0.1301 0.333 134.1012 .8593 .9941 72.17
      4.5 0.1363 0.7823 1.58 0.0171 0.1088 0.374 127.5571 .8580 .9532 65.72
      5 0.1187 0.6727 1.556 0.0207 0.0996 0.484 124.3952 .8573 .9497 63.82
      5.5 0.1041 0.5825 1.466 0.0234 0.0954 0.374 114.9557 .8553 .9355 57.95
      6 0.1 0.6018 1.339 0.0174 0.0937 0.294        
0.88 2.065 0.2033*mo 4 0.1581 0.9109 1.543 0.0141 0.1301 0.333 135.9375 .8426 .9873 71.25
      4.5 0.1365 0.7821 1.581 0.0177 0.1095 0.376 129.586 .8414 .9866 67.78
      5 0.1188 0.7729 1.557 0.0209 0.1001 0.486 126.3082 .8407 .9685 64.08
      5.5 0.1042 0.5827 1.467 0.0235 0.0958 0.394 115.83 .8385 .9403 57.54
      6 0.1 0.6023 1.339 0.0176 0.0941 0.295        
0.87 2.036 0.2027*mo 4.5 0.1366 0.8921 1.583 0.0177 0.1097 0.377 130.1828      
      5 0.1189 0.673 1.558 0.021 0.1004 0.488        
      5.5 0.1042 0.5827 1.467 0.0237 0.0964 0.395 118.3461 .8220 .9690 59.90
0.86 2.008 0.20187*mo 4 0.1585 0.9109 1.545 0.0145 0.1321 0.337        
      4.5 0.1367 0.7823 1.584 0.0181 0.1105 0.379        
      5 0.119 0.673 1.559 0.0212 0.101 0.49        
      5.5 0.1043 0.5827 1.467 0.0238 0.0969 0.396 120.4745 .8061 .9880 60.45

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 Data Table (Continue)
Phosphorous Band gap (Barrier Dot Position Position Position width width width Jsc Voc FF Efficiency
content material size of first of of third of First of of
electron band second band band second third
effective band band band
mass)mb

0.85 1.98 0.2012*mo 4 0.1586 0.9108 1.547 0.0147 0.1383 0.338        

      4.5 0.1369 0.7824 1.585 0.0182 0.1109 0.381        
      5 0.1104 0.673 1.559 0.0213 0.1016 0.493        
      5.5 0.1044 0.5828 1.467 0.0239 0.0973 0.396 122.5764 .8061 0.9887 61.59
0.84 1.954 0.2004*mo 4 0.1588 0.9109 1.548 0.0148 0.1311 0.34        
      4.5 0.137 0.7825 1.586 0.0183 0.1115 0.382        
      5 0.1192 0.6731 1.56 0.0215 0.1021 0.496        
      5.5 0.1045 0.5828 1.468 0.0241 0.0979 0.396        
0.83 1.927 0.1990*mo 4 0.159 0.9108 1.55 0.0149 0.1342 0.341        
      4.5 0.1372 0.7825 1.587 0.0184 0.112 0.385        
      5 0.1193 0.6732 1.56 0.0216 0.1024 0.498        
      5.5 0.1046 0.5829 1.468 0.0242 0.0983 0.397        
0.82 1.901 0.1990*mo 4 0.1592 0.9109 1.551 0.015 0.1341` 0.343        

      4.5 0.1373 0.7824 1.589 0.0185 0.1126 0.386        

      5 0.1194 0.6732 1.561 0.0218 0.1031 0.501        
      5.5 0.1047 0.583 1.468 0.0243 0.0988 0.398        
0.81 1.876 0.1982*mo 4 0.1594 0.9109 1.553 0.0151 0.1351` 0.344        

      4.5 0.1374 0.7827 1.59 0.0188 0.113 0.389        

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 Data Table (Continue)
Phosphorous Band gap (Barrier Dot Position Position Position width width width Jsc Voc FF Efficiency
content material size of first of of third of First of of
electron band second band band second third
effective band band band
mass)mb

0.8 1.851 0.1976*mo 4.5 0.1375 0.782 1.59 0.0187 0.1132 0.389        
      5 0.1205 0.6729 1.562 0.0209 0.1037 0.504        
      5.5 0.1049 0.5829 1.469 0.0243 0.0981 0.396        
      6 0.1 0.5084 1.339 0.0191 0.0967 0.298        
0.7 1.632 0.19034*mo 4.5 0.1392 0.7824 1.602 0.0198 0.119 0.41 83.38 .8368 .8189 47.12
      5 0.1209 0.6736 1.569 0.023 0.108 0.53        
      5.5 0.1057 0.5835 1.471 0.026 0.104 0.402        
      6 0.1 0.5091 1.34 0.0213 0.1021 0.304        
0.6 1.468 0.18375*mo 4.5 0.1403 0.7829 1.614 0.0215 0.1238 0.43 93.85 .8398 .8212 48.36
      5 0.122 0.6741 1.576 0.0246 0.1143 0.643        
      5.5 0.1066 0.584 1.475 0.0274 0.1096 0.405        
      6 0.1 0.5099 1.34 0.0235 0.1066 0.312        
0.5 1.358 0.176*mo 4.5 0.1419 0.7838 1.629 0.0232 0.1309 0.454 100.64 .8416 .8272 49.39
      5 0.1231 0.6755 1.583 0.0266 0.1203 0.584        
      5.5 0.1076 0.5849 1.477 0.0294 0.1159 0.413        
      6 0.1 0.5106 1.342 0.0262 0.1129 0.319        

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 Data Table (Continue)
Phosphorous Band gap (Barrier Dot Position Position Position width width width Jsc Voc FF Efficiency
content material size of first of of third of First of of
electron band second band band second third
effective band band band
mass)mb

0.4 1.301 0.168605*mo 4.5 0.1435 0.7841 1.642 0.0251 0.1381 0.571 104.09 .8685 .8371 51.86

      5 0.1245 0.6764 1.59 0.0284 0.1267 0.618        

      5.5 0.1085 0.5858 1.48 0.0314 0.1221 0.418        
      6 0.1 0.5116 1.342 0.288 0.1173 0.328        
0.3 1.298 0.1622*mo 4.5 0.145 0.7848 1.653 0.0267 0.1441 0.507 104.36 .8692 .8376 51.91
      5 0.1254 0.6776 1.598 0.0305 0.1327 0.584        
      5.5 0.1095 0.5865 1.482 0.0332 0.1281 0.426        
      6 0.1 0.5121 1.344 0.0313 0.125 0.335        
0.2 1.35 0.1537*mo 4.5 0.1468 0.7859 1.669 0.0294 0.1543 0.542 101.6289 0.9419 0.8649 52.16

      5 0.1269 0.6797 1.606 0.0329 0.1411 0.59        

      5.5 0.1106 0.5873 1.485 0.0359 0.1369 0.437        
      6 0.1 0.5129 1.344 0.0349 0.1335 0.348        
0.1 1.456 0.146*mo 4.5 0.1487 0.7856 1.687 0.0322 0.1634 0.575 95.2646 0.9402 0.8665 48.90

      5 0.1284 0.6796 1.613 0.0359 0.1512 0.596        

      5.5 0.118 0.5882 1.489 0.0384 0.1461 0.445        
      6 0.1 0.5143 1.345 0.0379 0.1415 0.359        

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 Observation from Table

1. From above table it is seen that it is impossible to place 3 intermediate

bands between conduction and valance band for phosphorus content
below 0.89. Moreover, for phosphorus content above 0.9 to 0.94 , 3 IB is
not possible for dot size 5nm and 6nm. For, content 0.96 , 3IB is not
possible for dot size 6nm and for content 0.89, 3IB is only possible for
dot size 5.5nm.

2. Band gap value increases with the increase of Phosphorus content.

3. For the same dot size , Jsc decreases and Voc increases with an increase
in phosphorous content or the increase in barrier band gap.

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 Observation from Table (Continue)
4. Band position will get lower value with the increase of dot size.

5. Band width will get larger value with the increase of dot size.

6. Due to the change of band gap, the change in band position and band
width is negligible for same dot size.

7. Most important point is that though the value Jsc is high for dot size
below 4nm for any value of band gap . but it is seen from the obtained data
that below 4 nm ) the positon of 2nd and 3rd band is very close (less than
0.5eV) which may cause an interaction between bands. This will lead to
thermalization loss. Thus , it is better to use dot size over 4 nm .

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Graph Obtained From Table

Figure No 09 : Effect of QD size on IBs position

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Graph Obtained From Table (Continue)

Figure No 10 : Effect of QD size on proposed cell’s Efficiency.

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Graph Obtained From Table (Continue)

Figure No 11 : Effect of Phosphorus Content On cell’s Efficiency

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MATLAB APP Simulation

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0.9549

85.32
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 Results & comparison between conventional and
QDIBSC efficiency
Cell Structure Cell Efficiency Ref.
Single Junction 22.7% 2017, [7]
1Band QDSC(PbSe/GaAs) 37.52% 2017, [7]
2 IB QDSC (AlAs/GaAs) 52.1% 2012, [3]
2 IB QDSC 51.6% 2014, [1]
(IAs.9N.1/GaAs.98Sb.02)
(For Lq = 4nm, Lb = 2nm)
2 IB QDSC 49.27% 2018, [4]
(In.75Ga.25N/GaN)
(For Lq = 1.4nm)
1 IB QDSC 38.88% Our Work
(InAs0.98N.02/AlP0.3Sb0.7 )
(For Lq = 4.5nm, Lb = 2.6 nm)
2 IB QDSC 51.91% Our Work
(InAs0.98N.02/AlP0.3Sb0.7 )
(For Lq = 4.5nm, Lb = 2.6 nm)
3 IB QDSC 63.12% Our Work
(InAs0.98N.02/AlP0.92Sb0.08 )
(For Lq = 4.5nm, Lb = 2.6 nm)

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 Future Work

• Here , we consider only the physical parameters effect on cell’s

performance. Optical parameters effect on performance can be
explored.

• Basically here we try to determine the InAs.98N.02/AlPxSb(x-1) QDIBSC’s

performance from physical parameter’s perspective . Similar analysis
can be performed on other materials.

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 Conclusion
The efficiency of single junction solar cell is very low because it can
not utilize the

From our work we found that due to introduce QDIB value of short
circuit current density increases. As current density is directly
proportional to the efficiency thus with an increase in current density
efficiency also increases. As the implementation of QDIBSC is quite
difficult and expensive, though the energy density increases we can
neglect the cost for special application like space and research.

From our work we have found theoretical efficiency is about 65% for
3IB. But its practical implementation may provide less efficiency than
theoretical value. But we are hopeful that our work will pave the way
for future research.
13
 Referrences
1. Aly AE, Nasr A. Theoretical Study of One-Intermediate Band Quantum Dot Solar
Cell. 2014;2014.
2. Luque, A., Cuadra, L., & Martı, A. (2004). Present status of intermediate band solar
cell research. 452, 593–599. https://doi.org/10.1016/j.tsf.2003.11.047
3. Quantum Dot Intermediate Band Solar Cells: Design Criteria and Optimal
Materials. A Thesis by Steven Evans Jenks, Drexel University, USA,2012(April).
4. Ul I, Chowdhury I, Sarker J, Shifat ASMZ, Shuvro RA, Farzan A. Results in Physics
Performance analysis of high efficiency In x Ga 1 À x N / GaN intermediate band
quantum dot solar cells. Results Phys. 2018;9:432-439. doi:10.1016/j.rinp.2018.03.003
5. Aly, A. E. M., & Nasr, A. (n.d.). The effect of multi-intermediate bands on the
behavior of an InAs 1 — quantum dot solar cell. 042001. https://doi.org/10.1088/1674-
4926/36/4/042001
6. Calculations Of Band Properties Of A Quantum Dot Intermediate Band Solar Cell
With Centrally Located Hydrogenic Impurities. A Thesis by Michael Yehuda Levy,
Georgia University Of Technology , Georgia ,2004(July).
7. MD.Afiqul Isalm, N. S. (2017). Quantum dot intermediate band solar cell.

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Thank You

Department of EEE, CUET 59

Questions
& Answer

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