DMT 234 Semiconductor Physic & Device
LECTURE 4
CARRIER
TRANSPORT
PHENOMENA
DMT 234 Semiconductor Physic & Device
Preview
The net flow of the electron and holes in a semiconductor will generate current.
The process which these charged particles move is call transport.
Two basic transport : Drift & Diffusion.
The carrier transport phenomena are the foundation for finally determining the
current-voltage characteristics of semiconductor devices.
Subtopic :
I. Carrier Drift
II. Carrier Diffusion
III. Hall Effect.
DMT 234 Semiconductor Physic & Device
4.1 Carrier Drift
Transport : The process which charged particles ( holes or electrons) are
move.
Understanding of the electrical properties ( I-V properties)
Basic current Equation :
DMT 234 Semiconductor Physic & Device
DMT 234 Semiconductor Physic & Device
4.1.1 Drift Current Density
DMT 234 Semiconductor Physic & Device
4.1.1 Drift Current Density
DMT 234 Semiconductor Physic & Device
4.1.1 Drift Current Density
DMT 234 Semiconductor Physic & Device
4.1.1 Example carrier drift
To calculate the drift current density in a semiconductor for a given electric field. Consider
a gallium arsenide sample at T=300K with doping concentration of N a = 0 and Nd = 1016
cm-3. Assume complete ionization and assume electron and hole mobilities given is u n =
8500 cm2/v-s and up = 400 cm2/v-s. Calculate the drift current density if the applied electric
field is E = 10 V/cm.
Since Nd > Na, the semiconductor is n type and the majority carrier electron concentration:
n = 10 16 cm-3
The minority carrier hole concentration is :
p = n2i / n = (1.8 x 106)2 / 1016 = 3.24 x 10-4 cm-3
For this extrinsic n-type semiconductor, the drift current density is :
Jdrf = e ( unn + upp)E ≈ eunNdE
Then , Jdrf = (1.6 x 10-19)(8500)(1016)(10) = 136 A/cm2
EXERCISE
A drift current density of Jdrf = 75 A/cm2 is required in p-type
silicon device when electric field of E = 120 V/cm is applied.
Determine the required impurity doping concentration to achieve
this specification. µn = 1350 cm2/V.s ; µp = 480 cm2/V.s
Note : p-type s/c : Na > Nd
Jdrf = e ( unn + upp)E ≈ eupNaE
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Efects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.2 Mobility Effects
DMT 234 Semiconductor Physic & Device
4.1.3 Conductivity
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4.1.3 Conductivity
DMT 234 Semiconductor Physic & Device
4.1.3 Conductivity
DMT 234 Semiconductor Physic & Device
4.1.3 Conductivity / resistivity
DMT 234 Semiconductor Physic & Device
EXAMPLE
The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3.
Assume an electron mobility of µn = 1300 cm2/V.s and hole mobility, µp
= 450 cm2/V.s.
i.Calculate the resistivity of the material
ii.Calculate the conductivity of the material
DMT 234 Semiconductor Physic & Device
4.1.3 Velocity Saturation
DMT 234 Semiconductor Physic & Device
4.2 Carrier Diffusion
DMT 234 Semiconductor Physic & Device
4.2 Carrier Diffusion
DMT 234 Semiconductor Physic & Device
4.2 Carrier Diffusion
DMT 234 Semiconductor Physic & Device
4.2 Carrier Diffusion
DMT 234 Semiconductor Physic & Device
4.2 Example Carrier Diffusion
To calculate the diffusion current density given a density gradient. Assume that, in an n-type gallium
arsenide semiconductor at T= 300 K, the electron concentration varies linearly from 1 x 10 18 to 7 x
1017 cm-3 over a distance of 0.10 cm. Calculate the diffusion current density if the electron diffusion
coefficient is Dn = 225 cm2/s.
The diffusion current density is given :
Jn|dif = eDn dn/dx
= (1.6 x 10-19)(225)(1 x 1018 – 7x1017/0.1)
= 108 A/cm2.
DMT 234 Semiconductor Physic & Device
4.2 Example Carrier Diffusion
To calculate the diffusion current density given a density gradient. Assume that, in an n-type gallium
arsenide semiconductor at T= 300 K, the electron concentration varies linearly from 4 x 10 18 to 6 x
1017 cm-3 over a distance of 0.50 cm. Calculate the diffusion current density if the electron diffusion
coefficient is Dn = 225 cm2/s.
DMT 234 Semiconductor Physic & Device
4.2.1 Total current density
DMT 234 Semiconductor Physic & Device
4.2.1 Einstein relation
DMT 234 Semiconductor Physic & Device
4.2.1 Einstein relation
DMT 234 Semiconductor Physic & Device
4.2.1 Einstein relation
DMT 234 Semiconductor Physic & Device
4.3 Hall Effect
DMT 234 Semiconductor Physic & Device
4.3 Hall Effect
DMT 234 Semiconductor Physic & Device
4.3 Hall Effect
DMT 234 Semiconductor Physic & Device
4.3 Hall Effect
DMT 234 Semiconductor Physic & Device
4.3 Example Hall Effect
To determine the majority carrier concentration and mobility, given Hall effect
parameters. Consider the geometry shown in Figure from previous slide. Let L = 10-1
cm ,W = 10-2 cm, and d = 10-3 cm. Also assume that Ix = 1.0 mA, Vx = 12.5 V, Bz = 500
gauss = 5 x 10-2 tesla and VH = -6.25 mV.
A negative Hall voltage for this geometry implies that we have an n-type semiconductor
using equation, we can calculate the electron concentration as :
n = -(10-3)(5 x 10-2)/ (1.6 x 10-19)(10-5)(-6.25 x 10-3) = 5 x 1021 m-3 = 5 x 1015 cm-3
The electron mobility is then determine from equation as :
Un = (10-3)(10-3) / (1.6 x 10-19)(5 x 1021)(12.5)(10-4)(10-5) = 0.1 m2/ V-s
Or Un = 1000 cm2/V-s.
DMT 234 Semiconductor Physic & Device
Q & A
Next week Topic :Nonequilibrium Excess
Carriers in Semicondcutor.
DMT 234 Semiconductor Physic & Device
