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GTO
• A GTO thyristor, which stands for "Gate Turn-Off
Thyristor", is a three terminal power semiconductor device that can be triggered in both on and off states using signals applied to its gate terminal (gto gate turn off thyristor). • It was developed to address a key limitation of conventional thyristors - their inability to turn off using gate signals. • GTO thyristors are also bipolar, voltage-triggered devices. • However, they overcome the limitation of thyristors by allowing turn-off through the application of a negative voltage at the gate terminal. • This property makes GTO thyristors fully controllable switching devices. • The symbol of a GTO thyristor is quite similar to that of a conventional thyristor with a few differences (gto thyristor symbol): • It has three terminals - Anode, Cathode, and Gate. • Double arrows are used at the gate terminal to signify bidirectional current flow during turn-on and turn-off actions. • No diode symbols are shown as in thyristors since both forward and reverse directions can conduct in a GTO thyristor based on the gate signal. • GTO Thyristor Construction • It has a basic four layer PNPN structure made of alternating layers of N-type and P-type semiconductors. • The cathode region is highly doped with N-type material for high emitter efficiency. • The anode region has a number of N+ type regions diffused periodically to allow direct flow of electrons, avoiding storage of carriers. • This "anode shorted" structure reduces reverse blocking voltage to around 20-30V only. • The P-gate region has a non-uniformly graded doping for good turning on and off. • Cathode and gate fingers are interdigitated for fast turn-off. • Fig- GTO Construction • The Diagram represents the doping level of the GTO, where the pn and pn layers are doped as p+ np+ n+. • Here, to have high efficiency of the cathode, the n+ layer is highly doped. The doping requirement of the p-type gate region is quite contradictory because to have high emitter efficiency this layer should be lightly doped. • But to have good turning off characteristics of the GTO; its resistivity should be low so it must be highly doped. Because of this reason, this layer is moderately doped. GTO Thyristor Working
• The working of a GTO thyristor can be
understood in terms of its turn-on and turn-off operations: • Turn on mechanism • When a small positive voltage (5V typically) is applied between the gate and cathode terminals, the P-gate/N-cathode junction becomes forward biased. This leads to the injection of holes from the P-gate region into the adjacent N-cathode region. Turn off mechanism
• When a negative gate pulse is applied, it causes
the extraction of stored holes from the P-base region near the gate-cathode junction.
• The removal of holes leads to the depletion of
the P-base region below the gate terminal. GTO Thyristor Characteristics
• VI characteristics of a GTO thyristor include (gto
thyristor characteristics): • Forward blocking mode: Below breakdown, it blocks voltage like a reverse biased diode with small leakage current. • Forward conduction mode:It conducts forward current above the holding/latching current value when gate is positively biased. • Reverse blocking mode:It can block a small reverse voltage of 20-30V depending on design before going into reverse conduction. • Reverse conduction mode:It conducts reverse current when reversed biased beyond the reverse breakdown voltage. • Turn-off mode: During turn-off, it undergoes transition from forward to reverse conduction/blocking states. Fig: V-I characteristics of a GTO • Advantages • Some of the Important advantages of GTO thyristors include: • 1. Fully controllable switching with turn-on and turn-off capability • 2. Fast switching speeds in kHz range suitable for power electronic converters • 3. Good reverse recovery and di/dt characteristics. • 4. No need for commutation circuits • 5. High voltage and current blocking capability. Disadvantages
• High turn-off losses
• Requires high negative gate drive currents for turn-off • Generates more heat during switching compared to IGBTs • Prone to damage due to self-heating at high frequency operations • More expensive than alternatives like IGBTs GTO Thyristor Applications
• Due to their versatile switching capability, GTO
thyristors find wide applications in power control and conversion systems. Some common applications include: • i. AC voltage controllers ii. DC choppers iii. Motor speed controllers iv. Battery chargers • Inverters for UPS systems vi. Electric vehicle motor controls Parameters GTO Thyristor SCR (Silicon Controlled Rectifier) Turn-on Turned on by applying Turned on by Method a small positive gate applying a small current. positive gate current. Turn-off Turned off by applying Cannot be turned off Method a high negative gate by gate. Requires current pulse which the anode current to extracts stored reduce below carriers. holding level for turn off. Commutation No external An external Circuit commutation circuit is commutation circuit required for turn-off. is necessary to force turn-off by reducing anode current when required. Thyristor Cooling Methods:
• In cooling applications, thyristors are often used to
control cooling fans, chillers, or pumps. The goal is to manage the power delivered to these cooling components, much like heating systems. • a. Fan Speed Control (Using Phase Angle): • Thyristors can be used to control the speed of AC fans by adjusting the phase angle. Lower fan speeds result in less cooling, while higher fan speeds increase cooling. • This method is typically used in air conditioning systems or refrigeration units where cooling power needs to be dynamically adjusted. • B. Compressor Control in Refrigeration: • In systems like air conditioners and refrigerators, thyristors can control the compressor's motor, adjusting how much work it does to compress refrigerant. By modulating the power to the compressor, the cooling effect can be increased or decreased. • c. Pump Control (Water-Cooled Systems): • In water-cooled or liquid-cooled systems, thyristors can regulate pumps that circulate coolant. Adjusting the pump speed controls the rate of heat exchange and, thus, the cooling effect. • Pulse Width Modulation (PWM): • In some cooling systems, thyristors control cooling devices via PWM, a technique where the power is delivered in pulses. • By varying the pulse width, the cooling output can be modulated. PWM is commonly used in systems where smooth and precise control over cooling is required. Firing Circuits of Thyristor or SCR – R, RC & UJT Triggering
• There are many ways to turn ON a thyristor, like forward-
voltage firing, dv/dt triggering, temperature triggering, light triggering, and gate triggering. • But other than these methods, the most commonly employed method to turn-ON a thyristor is by controlling the gate pulse. • The circuit used for turning ON the thyristor by giving gate pulses is called the Firing or Triggering Circuit of SCR. • But in order to employ the firing circuit method for turning ON thyristor, the circuit must fulfill some conditions, Conditions for Triggering or Firing Circuits of Thyristors :
• Certain conditions are to be met for firing the
thyristors are, • Gate current should be of sufficient amplitude and should flow in the circuit for the required duration. • Voltage pulses should be fed to the driver circuit first and then to the gate-cathode circuit. • For a circuit with more than one thyristor, the gate current for each thyristor must be provided at the desired instant of time. The general layout for firing the thyristor is shown below. • The firing circuit consists of a control circuit, a driver circuit, and a power circuit. • The output of the pulse generator is fed to the pulse amplifier for amplification. Amplified pulses are given to the pulse transformer through shielded cables. • The pulse transformer separates the low-voltage gate-cathode circuit from the high-voltage anode-cathode circuit. Triggering or Firing Circuits of Thyristor or SCR :
waveforms of the resistance firing circuit. This firing circuit is the simplest method of controlling the firing angle of SCR. • In this firing circuit, the firing angle can vary over a limited range of 0° to 90°. Instead of giving gate pulses to the thyristor, an ac supply is given to the gate terminal for firing. • Working of Resistance Firing Circuit (R-Firing) : • The working of the resistance firing circuit is as follows, • During the positive half-cycle of the voltage source V S, thyristor, T is forward-biased, but it doesn’t conduct because of insufficient gate current. Hence, load voltage VL is zero. • As voltage source VS increases, thyristor and diode both are forward-biased, and gate current IG flows in the circuit. • When gate current IG reaches to value equal to IG(min), the thyristor is turned-ON and load voltage follows source voltage, and the voltage drop across the thyristor is equal to the on-state drop. • During the negative half cycle of the supply voltage, the thyristor is reverse-biased, and hence it is turned OFF. Thus load voltage VL becomes zero and voltage across the thyristor VT will be equal to source voltage VS. • The diode in the gate circuit prevents the reverse voltage of the thyristor during the negative half- cycle from exceeding peak reverse voltage. The limiting resistance RL placed between anode and gate of thyristor limits the gate current not to exceed peak gate current IG(max). • From the waveforms above, the firing angle and the output voltage can be controlled by varying the variable resistance RV. • If RV is large, then the current will be small, and hence firing angle (α) increases and vice versa. Advantages of Resistance Firing Circuit : • The firing circuit is very easy and simple to operate. • The firing angle can be varied from 0° to 90°. • By using a capacitor and a diode, the limited firing angle issue is resolved. Disadvantages of Resistance Firing Circuit : • Limited firing angle i.e., up to 90° only. • The firing angle is totally dependent on the minimum gate current of thyristors. • The value of minimum gate current changes between the thyristors. • It is a temperature-dependent circuit.