Mewar University Name : Jasavant Yadav

Class : B.Tech/3 rd year Branch : Electrical/5th sem Batch : A2 Click to edit Master subtitle style Topic : B.J.T. Roll no.: 09MUBEE035 Date : 06/12/2011
5/2/12

Bipolar Junction Transistors (BJTs)

The bipolar junction transistor is a semiconductor device constructed with three doped regions. These regions essentially form two back-to-back p-n junctions in the same block of semiconductor material (silicon).

The most common use of the BJT is in linear amplifier circuits (linear means that the output is proportional to input). 5/2/12 It can also be used as a switch (in, for

The BJT Bipolar Junction Transistor

Note: It will be very helpful to go through the Analog Electronics Diodes Tutorial to get information on doping, n-type and p-type materials.

The Two Types of BJT Transistors: npn pnp

E n p n C C B B
Schematic Symbol

C C

Cross Section

Cross Section

B B
Schematic Symbol

Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015
Kristin Ackerson, Virginia Tech EE Spring 2002

5/2/12

BJT Relationships - Equations

IE E VB E IB + B + VC E + IC C VB C E + VE B B IB IE + VE C IC C + VC B

npn

IE = IB + IC VCE = -VBC + VBE

pnp

IE = IB + IC VEC = VEB - VCB

Note: The equations seen above are for the transistor, not the circuit. 5/2/12
Kristin Ackerson, Virginia Tech EE Spring 2002

DC and DC
= Common-emitter current gain = Common-base current gain = IC = IC IB IE The relationships between the two parameters are: = = +1 1- Note: and are sometimes referred to as dc and dc because the relationships being dealt with in the BJT are DC.

5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

BJT Example
Using Common-Base NPN Circuit Configuration C VCB B VBE IC IB Given: IB = 50 A , IC = 1 mA Find: IE , , and Solution: IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA
b

+ _

= IC / IB = 1 mA / 0.05 mA = 20

+ _

IE

= IC / IE = 1 mA / 1.05 mA = 0.95238 could also be calculated using the value of with the formula from the previous slide. = = 20 = 0.95238 +1 21

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Kristin Ackerson, Virginia Tech EE Spring 2002

BJT Transconductance Curve

Typical NPN Transistor 1 Collector Current: IC = IES eVBE/VT Transconductance: (slope of the curve)

IC
8 mA

gm = IC / VBE
IES = The reverse saturation current of the B-E Junction. VT = kT/q = 26 mV (@ T=300K) = the emission coefficient and is usually ~1

6 mA

4 mA

2 mA

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0.7 V

VBE
Kristin Ackerson, Virginia Tech EE Spring 2002

Modes of Operation
Active:

Most important mode of operation Central to amplifier operation The region where current curves are practically flat

Saturation:

Barrier potential of the junctions cancel each other out causing a virtual short

Cutoff:

Current reduced to zero Ideal transistor behaves like an open switch

* Note: There is also a mode of operation called inverse active, but it is rarely used. 5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

Three Types of BJT Biasing

Biasing the transistor refers to applying voltage to get the transistor to achieve certain operating conditions. Common-Base Biasing (CB) : input output = VCB & IC = VEB & IE

Common-Emitter Biasing (CE): input = VBE & IB output = VCE & IC Common-Collector Biasing (CC): input = VBC & IB output = VEC & IE

5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

Common-Base
Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves IC Active Region Saturation Region IE

Cutoff IE = 0 VC B
Kristin Ackerson, Virginia Tech EE Spring 2002

5/2/12

Common-Base
Circuit Diagram: NPN Transistor

IC

VC E

IE VB E
+ _

The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit in the different regions of operation. Given for a Silicon NPN transistor.

VC B IB
+ _

Region of Operation Active Saturation Cutoff

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VC B
IC IB Max ~0 VCE VBE VCB =VBE+VC ~0.7V 0V E ~0V

C-B Bias Rev.

VB E

E-B Bias Fwd. Fwd. None/ Rev.

~0.7V -0.7V<VCE<0 Fwd. 0V Rev.

=VBE+VC 0V E

Common-Emitter
Circuit Diagram IC VC E IC Collector-Current Curves

VC C

+ _

IB

Active Region IB

Region of Description Operation Active Small base current controls a large collector current

VC E Saturation Region Cutoff Region IB = 0

Saturation VCE(sat) ~ 0.2V, VCE increases with IC Cutoff Achieved by reducing IB to 0, Ideally, IC will 5/2/12 also equal 0.

Kristin Ackerson, Virginia Tech EE Spring 2002

Common-Collector
Emitter-Current Curves The Common-Collector biasing circuit is basically equivalent to the commonemitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since ~ 1, and = IC/IE that means IC~IE IE

Active Region

IB

VCE Saturation Region Cutoff Region IB = 0 5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

Eber-Moll BJT Model

The Eber-Moll Model for BJTs is fairly complex, but it is valid in all regions of BJT operation. The circuit diagram below shows all the components of the Eber-Moll Model:

IE

IC

RI C IF IB
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RIE

IR

Kristin Ackerson, Virginia Tech EE Spring 2002

Eber-Moll BJT Model

R = Common-base current gain (in forward active mode) F = Common-base current gain (in inverse active mode) IES = Reverse-Saturation Current of B-E Junction ICS = Reverse-Saturation Current of B-C Junction

IC = FIF IR IE = IF - RIR

IB = IE - IC IR = IC [exp(qVBC/kT)

IF = IES [exp(qVBE/kT) 1] 1]

If IES & ICS are not given, they can be determined using various BJT parameters.

5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

Small Signal BJT Equivalent Circuit

The small-signal model can be used when the BJT is in the active region. The smallsignal active-region model for a CB circuit is shown below: iB B r iB iC

r = ( + 1) * VT IE
@ = 1 and T = 25C E Recall:

iE

r = ( + 1) * 0.026 IE
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= IC / IB
Kristin Ackerson, Virginia Tech EE Spring 2002

The Early Effect (Early Voltage)

Note: Common-Emitter Configuration IC

IB

-VA Green = Ideal IC Orange = Actual IC (IC) IC = IC VCE + 1 VA

VCE

5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

Early Effect Example

Given: The common-emitter circuit below with IB = 25A, 15V, = 100 and VA = 80. Find: a) The ideal collector current b) The actual collector current VCC =

Circuit Diagram IC

VCE

VCC +
_

IB

= 100 = IC/IB a) IC = 100 * IB = 100 * (25x10-6 A) IC = 2.5 mA

b

b)

VCE + 1 VA IC = 2.96 mA 5/2/12

IC = IC

= 2.5x10-3 80

15 + 1 = 2.96 mA

Kristin Ackerson, Virginia Tech EE Spring 2002

Breakdown Voltage
The maximum voltage that the BJT can withstand. BVCEO = The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually ranges from ~201000 Volts. BVCBO = The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts.

Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage

5/2/12

Kristin Ackerson, Virginia Tech EE Spring 2002

THANK YOU
5/2/12